KR100441190B1 - 확산 배리어층 및 그의 제조 방법 - Google Patents
확산 배리어층 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR100441190B1 KR100441190B1 KR10-2001-7002560A KR20017002560A KR100441190B1 KR 100441190 B1 KR100441190 B1 KR 100441190B1 KR 20017002560 A KR20017002560 A KR 20017002560A KR 100441190 B1 KR100441190 B1 KR 100441190B1
- Authority
- KR
- South Korea
- Prior art keywords
- platinum
- ruthenium
- alloy
- electrode
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/146,866 | 1998-09-03 | ||
| US09/146,866 US6323081B1 (en) | 1998-09-03 | 1998-09-03 | Diffusion barrier layers and methods of forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010073053A KR20010073053A (ko) | 2001-07-31 |
| KR100441190B1 true KR100441190B1 (ko) | 2004-07-22 |
Family
ID=22519319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-7002560A Expired - Fee Related KR100441190B1 (ko) | 1998-09-03 | 1999-08-31 | 확산 배리어층 및 그의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6323081B1 (enExample) |
| JP (2) | JP5328065B2 (enExample) |
| KR (1) | KR100441190B1 (enExample) |
| AU (1) | AU5799699A (enExample) |
| WO (1) | WO2000014778A1 (enExample) |
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| US7931090B2 (en) * | 2005-11-15 | 2011-04-26 | Schlumberger Technology Corporation | System and method for controlling subsea wells |
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- 1999-08-31 KR KR10-2001-7002560A patent/KR100441190B1/ko not_active Expired - Fee Related
- 1999-08-31 JP JP2000569428A patent/JP5328065B2/ja not_active Expired - Fee Related
- 1999-08-31 AU AU57996/99A patent/AU5799699A/en not_active Abandoned
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2001
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Also Published As
| Publication number | Publication date |
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| JP2012134508A (ja) | 2012-07-12 |
| JP5490829B2 (ja) | 2014-05-14 |
| US6323081B1 (en) | 2001-11-27 |
| WO2000014778A1 (en) | 2000-03-16 |
| KR20010073053A (ko) | 2001-07-31 |
| JP2002524872A (ja) | 2002-08-06 |
| US20020008270A1 (en) | 2002-01-24 |
| JP5328065B2 (ja) | 2013-10-30 |
| AU5799699A (en) | 2000-03-27 |
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