DE69508737T2 - Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält - Google Patents

Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält

Info

Publication number
DE69508737T2
DE69508737T2 DE69508737T DE69508737T DE69508737T2 DE 69508737 T2 DE69508737 T2 DE 69508737T2 DE 69508737 T DE69508737 T DE 69508737T DE 69508737 T DE69508737 T DE 69508737T DE 69508737 T2 DE69508737 T2 DE 69508737T2
Authority
DE
Germany
Prior art keywords
memory module
ferroelectric memory
oxygen barrier
electrode contains
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508737T
Other languages
English (en)
Other versions
DE69508737D1 (de
Inventor
Robertus Wolters
Johanna Kemperman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69508737D1 publication Critical patent/DE69508737D1/de
Application granted granted Critical
Publication of DE69508737T2 publication Critical patent/DE69508737T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
DE69508737T 1994-10-04 1995-09-26 Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält Expired - Fee Related DE69508737T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94202867 1994-10-04
PCT/IB1995/000799 WO1996010845A2 (en) 1994-10-04 1995-09-26 Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier

Publications (2)

Publication Number Publication Date
DE69508737D1 DE69508737D1 (de) 1999-05-06
DE69508737T2 true DE69508737T2 (de) 1999-10-07

Family

ID=8217255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508737T Expired - Fee Related DE69508737T2 (de) 1994-10-04 1995-09-26 Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält

Country Status (9)

Country Link
US (2) US5744832A (de)
EP (1) EP0737364B1 (de)
JP (1) JP3804972B2 (de)
KR (1) KR100342296B1 (de)
CA (1) CA2178091A1 (de)
DE (1) DE69508737T2 (de)
MX (1) MX9602406A (de)
TW (1) TW286401B (de)
WO (1) WO1996010845A2 (de)

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KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법
KR100431294B1 (ko) * 2001-10-06 2004-05-12 주식회사 하이닉스반도체 반도체소자 제조방법
KR100432882B1 (ko) * 2001-10-12 2004-05-22 삼성전자주식회사 강유전성 메모리 장치 형성 방법
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JP3894554B2 (ja) * 2002-08-07 2007-03-22 松下電器産業株式会社 容量素子及びその製造方法
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DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7109079B2 (en) * 2005-01-26 2006-09-19 Freescale Semiconductor, Inc. Metal gate transistor CMOS process and method for making
KR100707783B1 (ko) * 2005-10-10 2007-04-17 삼성전기주식회사 컬러 휠 유니트 및 그 제작 방법
US9299643B2 (en) * 2008-09-29 2016-03-29 Cypress Semiconductor Corporation Ruthenium interconnect with high aspect ratio and method of fabrication thereof
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9548348B2 (en) * 2013-06-27 2017-01-17 Cypress Semiconductor Corporation Methods of fabricating an F-RAM
CN104600073B (zh) * 2013-10-30 2017-06-06 上海华虹宏力半导体制造有限公司 Otp器件及制造方法
CN104576648B (zh) * 2014-08-19 2017-03-29 上海华虹宏力半导体制造有限公司 Otp器件及其制造方法
JP6805674B2 (ja) * 2016-09-21 2020-12-23 豊田合成株式会社 発光素子及びその製造方法
KR20190008047A (ko) 2017-07-14 2019-01-23 에스케이하이닉스 주식회사 강유전성 메모리 소자
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Also Published As

Publication number Publication date
KR970702585A (ko) 1997-05-13
US5744832A (en) 1998-04-28
JPH09507342A (ja) 1997-07-22
EP0737364A1 (de) 1996-10-16
TW286401B (de) 1996-09-21
US6140173A (en) 2000-10-31
WO1996010845A2 (en) 1996-04-11
DE69508737D1 (de) 1999-05-06
MX9602406A (es) 1997-03-29
CA2178091A1 (en) 1996-04-11
WO1996010845A3 (en) 1996-06-06
KR100342296B1 (ko) 2002-11-29
JP3804972B2 (ja) 2006-08-02
EP0737364B1 (de) 1999-03-31

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee