DE69328342D1 - Halbleiterspeicherzelle - Google Patents

Halbleiterspeicherzelle

Info

Publication number
DE69328342D1
DE69328342D1 DE69328342T DE69328342T DE69328342D1 DE 69328342 D1 DE69328342 D1 DE 69328342D1 DE 69328342 T DE69328342 T DE 69328342T DE 69328342 T DE69328342 T DE 69328342T DE 69328342 D1 DE69328342 D1 DE 69328342D1
Authority
DE
Germany
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69328342T
Other languages
English (en)
Other versions
DE69328342T2 (de
Inventor
Yutaka Hayashi
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69328342D1 publication Critical patent/DE69328342D1/de
Application granted granted Critical
Publication of DE69328342T2 publication Critical patent/DE69328342T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE69328342T 1992-12-10 1993-12-09 Halbleiterspeicherzelle Expired - Lifetime DE69328342T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35220092 1992-12-10
JP13013093 1993-05-07
JP5246264A JPH0799251A (ja) 1992-12-10 1993-09-07 半導体メモリセル

Publications (2)

Publication Number Publication Date
DE69328342D1 true DE69328342D1 (de) 2000-05-18
DE69328342T2 DE69328342T2 (de) 2000-09-07

Family

ID=27316062

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328342T Expired - Lifetime DE69328342T2 (de) 1992-12-10 1993-12-09 Halbleiterspeicherzelle

Country Status (5)

Country Link
US (6) US5428238A (de)
EP (2) EP0601590B1 (de)
JP (1) JPH0799251A (de)
KR (1) KR100286087B1 (de)
DE (1) DE69328342T2 (de)

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Also Published As

Publication number Publication date
US5581106A (en) 1996-12-03
EP0971360A1 (de) 2000-01-12
US5578852A (en) 1996-11-26
EP0601590B1 (de) 2000-04-12
KR100286087B1 (ko) 2001-04-16
US5578853A (en) 1996-11-26
US5506436A (en) 1996-04-09
KR940016813A (ko) 1994-07-25
JPH0799251A (ja) 1995-04-11
US5576571A (en) 1996-11-19
EP0601590A2 (de) 1994-06-15
US5428238A (en) 1995-06-27
DE69328342T2 (de) 2000-09-07
EP0601590A3 (en) 1997-05-02

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