JP4669735B2 - リソグラフィ装置及びデバイス製造方法 - Google Patents
リソグラフィ装置及びデバイス製造方法 Download PDFInfo
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- JP4669735B2 JP4669735B2 JP2005143396A JP2005143396A JP4669735B2 JP 4669735 B2 JP4669735 B2 JP 4669735B2 JP 2005143396 A JP2005143396 A JP 2005143396A JP 2005143396 A JP2005143396 A JP 2005143396A JP 4669735 B2 JP4669735 B2 JP 4669735B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Life Sciences & Earth Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
1.ステップ・モードでは、マスク・テーブルMT及び基板テーブルWTは、基本的に静止状態に保たれ、一方投射ビームに付与されたパターン全体は、1回で(すなわち1回の静止した露光で)対象部分C上に投射される。次いで、基板テーブルWTは、X方向及び/又はY方向に移動されて、異なる対象部分Cを露光することができる。ステップ・モードでは、照射野の最大サイズが、1回の静止した露光で投影される、対象部分Cのサイズを限定する。
2.走査モードでは、マスク・テーブルMT及び基板テーブルWTが、投射ビームに付与されたパターンが対象部分C上に投射される間に(すなわち1回の動的な露光)、同期して走査される。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投射システムPLの倍率(縮小率)及び像反転特性によって決められる。走査モードでは、照射野の最大サイズが、1回の動的な露光の対象部分の幅(非走査方向)を限定し、一方走査運動の移動距離が、対象部分の高さ(走査方向)を決める。
3.他のモードでは、マスク・テーブルMTは、基本的に静止状態に保たれてプログラム可能なパターン形成手段を保持し、基板テーブルWTは、投射ビームに付与されたパターンが対象部分C上に投射される間、移動される又は走査される。このモードでは、一般に、パルス放射源が使用され、プログラム可能なパターン形成手段が、基板テーブルWTの移動毎の後に、又は走査中の連続する放射パルス間に、必要に応じて更新される。このモードの動作は、上記で言及した種類のプログラム可能なミラー・アレイなどのプログラム可能なパターン形成手段を利用する、マスクを使用しないリソグラフィに容易に適用することができる。
BD ビーム送出システム
AM 調節手段
IL 照明システム、照明器
IN インテグレータ
CO 集光レンズ
PB 投射ビーム
MT 第1の支持構造、対物テーブル、マスク・テーブル
MA パターン形成手段、マスク
PL 用品、投射システム、レンズ
W 基板
C 対象部分
IF 干渉計、位置センサ
WT 基板テーブル、対物テーブル
M1、M2 マスク位置合わせマーク
P1、P2 基板位置合わせマーク
LSS 液体供給システム
ADS 能動型乾燥ステーション
5 浸漬液
10 ガス流手段、シャワー・ヘッド
50 注入口
60 排出口
110 中央流路
120 外側流路
IN 注入口
OUT 排出口
Claims (18)
- リソグラフィ装置であって、
基板テーブルと、
パターン形成されたビームを投射する投射システムと、
前記投射システムと前記基板テーブル上に位置する対象物との間のスペースを少なくとも部分的に浸漬液で充填する液体供給システムと、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去する能動型乾燥ステーションとを含み、
前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面に、浸漬液を溶解する液体を供給する浸漬液溶解液体供給手段と、前記対象物、前記基板テーブル、又はその両方の表面上にガスを供給する少なくとも1つのガス注入口と、前記対象物、前記基板テーブル、又はその両方の表面からガスを除去する少なくとも1つのガス排出口と、を含む、ことを特徴とする装置。 - 前記能動型乾燥ステーションが、前記投射システムと基板露光後処理モジュールとの間に位置する、請求項1に記載の装置。
- 前記基板テーブルが、前記能動型乾燥ステーションに前記対象物を搬送する、及び/又は、前記基板テーブルが、前記能動型乾燥ステーションによって前記対象物から能動的に液体が除去される間、前記対象物を支持する、請求項1又は2に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するガス流手段を含む、請求項1から3までのいずれか一項に記載の装置。
- 前記ガス注入口が、ガス・ナイフを形成する、又は、少なくとも10個の注入口を持つガス・シャワーを含み、及び/又は、前記ガス注入口が、実質的に前記ガス排出口の周辺部を囲う、請求項1から4までのいずれか一項に記載の装置。
- 前記ガス・ナイフが、追加のガス注入口と、前記ガス注入口間に配置されたガス排出口とをさらに含む、請求項5に記載の装置。
- 前記浸漬液溶解液体が、前記浸漬液より揮発性が高い、及び/又は、前記浸漬液溶解液体が、ケトン又はアルコールである、請求項1から6までのいずれか一項に記載の装置。
- 前記少なくとも1つのガス排出口が、液体を除去する、請求項1から7までのいずれか一項に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方を回転させるスピナーを含む、請求項1から8までのいずれか一項に記載の装置。
- 前記対象物が、基板又はセンサを含む、請求項1から8までのいずれか一項に記載の装置。
- デバイス製造方法であって、
基板テーブルによって支持される基板を設けるステップと、
投射システムの最後の要素と前記基板テーブル上の対象物との間に浸漬液を供給するステップと、
前記投射システムを使用して、パターン形成されたビームを投射するステップと、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去するステップと、を含み、
前記能動的に液体を除去するステップは、
前記対象物、前記基板テーブル、又はその両方の表面に、前記浸漬液を溶解する溶解液体を供給するステップと、
少なくとも1つのガス注入口を使用して、前記対象物、前記基板テーブル、又はその両方の表面上にガスを供給するステップと、
少なくとも1つのガス排出口を使用して、前記対象物、前記基板テーブル、又はその両方の表面からガスを除去するステップと、を含む、ことを特徴とする方法。 - 前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するステップを含む、請求項11に記載の方法。
- 前記ガス流が、ガス・ナイフを形成する、又は、少なくとも10個の注入口を持つガス・シャワーを使用してガスを供給するステップを含む、請求項12に記載の方法。
- 前記ガス・ナイフが、2つの位置においてガスを供給するステップと、前記2つの位置間の位置からガスを除去するステップとを含む、請求項13に記載の方法。
- 前記ガスを除去するステップは、前記ガスが供給される位置の周辺部を実質的に囲繞する位置において行われる、請求項11から14までのいずれか一項に記載の方法。
- 前記溶解液体が、前記浸漬液より揮発性が高い、及び/又は、前記溶解液体が、ケトン又はアルコールを含む、請求項11から15までのいずれか一項に記載の方法。
- 前記ガスを除去するステップは、液体を除去する、及び/又は、前記対象物、前記基板テーブル、又はその両方を回転させるステップを含む、請求項11から16までのいずれか一項に記載の方法。
- 前記対象物が、基板又はセンサを含む、請求項11から17までのいずれか一項に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/847,661 US7616383B2 (en) | 2004-05-18 | 2004-05-18 | Lithographic apparatus and device manufacturing method |
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JP2009044651A Division JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Division JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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JP2005333134A JP2005333134A (ja) | 2005-12-02 |
JP4669735B2 true JP4669735B2 (ja) | 2011-04-13 |
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JP2005143396A Expired - Fee Related JP4669735B2 (ja) | 2004-05-18 | 2005-05-17 | リソグラフィ装置及びデバイス製造方法 |
JP2009044651A Active JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Active JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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JP2009044651A Active JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Active JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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US (4) | US7616383B2 (ja) |
EP (2) | EP2267538B1 (ja) |
JP (3) | JP4669735B2 (ja) |
KR (1) | KR100610646B1 (ja) |
CN (2) | CN100524033C (ja) |
SG (1) | SG117565A1 (ja) |
TW (1) | TWI266964B (ja) |
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EP2267538A1 (en) | 2010-12-29 |
EP2267538B1 (en) | 2012-03-14 |
JP2009164623A (ja) | 2009-07-23 |
US10761438B2 (en) | 2020-09-01 |
US20170235236A1 (en) | 2017-08-17 |
US8638415B2 (en) | 2014-01-28 |
JP2005333134A (ja) | 2005-12-02 |
KR100610646B1 (ko) | 2006-08-10 |
JP4997258B2 (ja) | 2012-08-08 |
JP2010239146A (ja) | 2010-10-21 |
CN101587303B (zh) | 2011-07-20 |
TW200608150A (en) | 2006-03-01 |
US9623436B2 (en) | 2017-04-18 |
CN101587303A (zh) | 2009-11-25 |
US7616383B2 (en) | 2009-11-10 |
KR20060047974A (ko) | 2006-05-18 |
CN100524033C (zh) | 2009-08-05 |
SG117565A1 (en) | 2005-12-29 |
EP1598705A1 (en) | 2005-11-23 |
TWI266964B (en) | 2006-11-21 |
US20050259232A1 (en) | 2005-11-24 |
CN1700098A (zh) | 2005-11-23 |
JP5236691B2 (ja) | 2013-07-17 |
US20140224173A1 (en) | 2014-08-14 |
US20100014061A1 (en) | 2010-01-21 |
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