JP2005333134A - リソグラフィ装置及びデバイス製造方法 - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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Abstract
【解決手段】液体供給システムが投射装置の最後の要素と基板との間に浸漬液を供給する、リソグラフィ投射装置が開示される。能動的乾燥ステーションが、基板を浸漬した後、基板W又は他の対象物から浸漬液を能動的に除去するために、設けられる。
【選択図】図1
Description
1.ステップ・モードでは、マスク・テーブルMT及び基板テーブルWTは、基本的に静止状態に保たれ、一方投射ビームに付与されたパターン全体は、1回で(すなわち1回の静止した露光で)対象部分C上に投射される。次いで、基板テーブルWTは、X方向及び/又はY方向に移動されて、異なる対象部分Cを露光することができる。ステップ・モードでは、照射野の最大サイズが、1回の静止した露光で投影される、対象部分Cのサイズを限定する。
2.走査モードでは、マスク・テーブルMT及び基板テーブルWTが、投射ビームに付与されたパターンが対象部分C上に投射される間に(すなわち1回の動的な露光)、同期して走査される。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投射システムPLの倍率(縮小率)及び像反転特性によって決められる。走査モードでは、照射野の最大サイズが、1回の動的な露光の対象部分の幅(非走査方向)を限定し、一方走査運動の移動距離が、対象部分の高さ(走査方向)を決める。
3.他のモードでは、マスク・テーブルMTは、基本的に静止状態に保たれてプログラム可能なパターン形成手段を保持し、基板テーブルWTは、投射ビームに付与されたパターンが対象部分C上に投射される間、移動される又は走査される。このモードでは、一般に、パルス放射源が使用され、プログラム可能なパターン形成手段が、基板テーブルWTの移動毎の後に、又は走査中の連続する放射パルス間に、必要に応じて更新される。このモードの動作は、上記で言及した種類のプログラム可能なミラー・アレイなどのプログラム可能なパターン形成手段を利用する、マスクを使用しないリソグラフィに容易に適用することができる。
BD ビーム送出システム
AM 調節手段
IL 照明システム、照明器
IN インテグレータ
CO 集光レンズ
PB 投射ビーム
MT 第1の支持構造、対物テーブル、マスク・テーブル
MA パターン形成手段、マスク
PL 用品、投射システム、レンズ
W 基板
C 対象部分
IF 干渉計、位置センサ
WT 基板テーブル、対物テーブル
M1、M2 マスク位置合わせマーク
P1、P2 基板位置合わせマーク
LSS 液体供給システム
ADS 能動型乾燥ステーション
5 浸漬液
10 ガス流手段、シャワー・ヘッド
50 注入口
60 排出口
110 中央流路
120 外側流路
IN 注入口
OUT 排出口
Claims (30)
- リソグラフィ装置であって、
放射の投射ビームを供給するための照明システムと、
前記投射ビームにパターンをその断面で付与するように働くパターン形成手段を支持するための支持構造と、
基板を保持するための基板テーブルと、
前記パターン形成されたビームを前記基板の対象部分上に投射するための投射システムと、
前記投射システムと前記基板テーブル上に位置する対象物との間のスペースを少なくとも部分的に浸漬液で充填するための液体供給システムとを含み、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去するための能動型乾燥ステーションをさらに含むことを特徴とする装置。 - 前記能動型乾燥ステーションが、前記投射システムと基板露光後処理モジュールとの間に位置する、請求項1に記載の装置。
- 前記基板テーブルが、前記能動型乾燥ステーションに前記対象物を搬送する、請求項1又は2に記載の装置。
- 前記基板テーブルが、前記能動型乾燥ステーションによって前記対象物から能動的に液体が除去される間、前記対象物を支持する、請求項1、2又は3に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するためのガス流手段を含む、前記請求項のいずれか一項に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面上にガスを供給するための少なくとも1つのガス注入口を含む、請求項1から5までのいずれか一項に記載の装置。
- 前記ガス注入口が、ガス・ナイフを形成する、請求項6に記載の装置。
- 前記ガス・ナイフが、追加のガス注入口と、前記ガス注入口間に配置されたガス排出口とをさらに含む、請求項7に記載の装置。
- 前記対象物、前記基板テーブル、又はその両方の表面からガスを排出するためのガス排出口をさらに含み、
前記ガス注入口が、実質的に前記ガス排出口の周辺部を囲う、請求項6に記載の装置。 - 前記ガス注入口が、少なくとも10個の注入口を持つガス・シャワーを含む、請求項6に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面に、浸漬液を溶解する液体を供給するための浸漬液体溶解液供給手段を含む、前記請求項のいずれか一項に記載の装置。
- 前記浸漬液体溶解液が、前記浸漬液より揮発性が高い、請求項11に記載の装置。
- 前記浸漬液体溶解液が、ケトン又はアルコールである、請求項11又は12に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面からガス、液体、又はその両方を除去するための、少なくとも1つのガス排出口を含む、前記請求項のいずれか一項に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方を回転させるためのスピナーを含む、前記請求項のいずれか一項に記載の装置。
- 前記対象物が基板を含む、前記請求項のいずれか一項に記載の装置。
- 前記対象物がセンサを含む、前記請求項のいずれか一項に記載の装置。
- デバイス製造方法であって、
基板テーブルによって支持される基板を設けるステップと、
照明システムを使用して放射の投射ビームを供給するステップと、
パターン形成手段を使用して前記投射ビームにパターンをその断面で付与するステップと、
投射システムの最後の要素と前記基板テーブル上の対象物との間に浸漬液を供給するステップと、
前記投射システムを使用して、前記パターン形成された放射のビームを前記対象物の対象部分上に投射するステップとを含み、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去するステップを特徴とする方法。 - 前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するステップを含む、請求項18に記載の方法。
- 前記ガス流が、ガス・ナイフを形成する、請求項19に記載の方法。
- 前記ガス・ナイフが、2つの位置においてガスを供給するステップと、前記2つの位置間の位置からガスを排出するステップとを含む、請求項20に記載の方法。
- ガスが供給される位置の周辺部を実質的に囲繞する位置において、前記対象物、前記基板テーブル、又はその両方の表面からガスを排出するステップをさらに含む、請求項19に記載の方法。
- 少なくとも10個の注入口を持つガス・シャワーを使用してガスを供給するステップを含む、請求項19に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方の表面に、前記浸漬液を溶解する溶解液体を供給するステップをさらに含む、請求項18に記載の方法。
- 前記溶解液体が、前記浸漬液より揮発性が高い、請求項24に記載の方法。
- 前記溶解液体が、ケトン又はアルコールを含む、請求項24に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方の表面からガス、液体、又はその両方を除去するステップを含む、請求項18に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方を回転させるステップを含む、請求項18から27までのいずれか一項に記載の方法。
- 前記対象物が基板を含む、請求項18から28までのいずれか一項に記載の方法。
- 前記対象物がセンサを含む、請求項18から29までのいずれか一項に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/847,661 US7616383B2 (en) | 2004-05-18 | 2004-05-18 | Lithographic apparatus and device manufacturing method |
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JP2009044651A Division JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Division JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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JP2005333134A true JP2005333134A (ja) | 2005-12-02 |
JP4669735B2 JP4669735B2 (ja) | 2011-04-13 |
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JP2005143396A Expired - Fee Related JP4669735B2 (ja) | 2004-05-18 | 2005-05-17 | リソグラフィ装置及びデバイス製造方法 |
JP2009044651A Active JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Active JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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JP2010132174A Active JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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US (4) | US7616383B2 (ja) |
EP (2) | EP1598705A1 (ja) |
JP (3) | JP4669735B2 (ja) |
KR (1) | KR100610646B1 (ja) |
CN (2) | CN100524033C (ja) |
SG (1) | SG117565A1 (ja) |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008072647A1 (en) * | 2006-12-13 | 2008-06-19 | Canon Kabushiki Kaisha | Exposure apparatus and device fabrication method |
JP2008147667A (ja) * | 2006-12-07 | 2008-06-26 | Asml Netherlands Bv | リソグラフィ装置、乾燥器および表面から液体を除去する方法 |
JP2009231838A (ja) * | 2008-03-24 | 2009-10-08 | Asml Netherlands Bv | 液浸リソグラフィ装置及びデバイス製造方法 |
JP2016540216A (ja) * | 2013-12-13 | 2016-12-22 | ベンタナ メディカル システムズ, インコーポレイテッド | 生体試料の自動化された組織学的処理および関連付けられた技術 |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG171468A1 (en) * | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
TWI591445B (zh) | 2003-02-26 | 2017-07-11 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
CN106444292A (zh) | 2003-04-11 | 2017-02-22 | 株式会社尼康 | 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置 |
KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
TWI612557B (zh) | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
TWI612556B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光裝置、曝光方法及元件製造方法 |
CN100541717C (zh) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW200511388A (en) | 2003-06-13 | 2005-03-16 | Nikon Corp | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
TW201721717A (zh) | 2003-06-19 | 2017-06-16 | 尼康股份有限公司 | 曝光裝置、曝光方法、及元件製造方法 |
JP2007527615A (ja) * | 2003-07-01 | 2007-09-27 | 株式会社ニコン | 同位体特定流体の光学素子としての使用方法 |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
WO2005006418A1 (ja) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
ATE513309T1 (de) * | 2003-07-09 | 2011-07-15 | Nikon Corp | Belichtungsvorrichtung und verfahren zur bauelementeherstellung |
KR20060026883A (ko) | 2003-07-09 | 2006-03-24 | 가부시키가이샤 니콘 | 결합장치, 노광장치 및 디바이스 제조방법 |
EP3346485A1 (en) | 2003-07-25 | 2018-07-11 | Nikon Corporation | Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method |
KR101599649B1 (ko) * | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101288632B1 (ko) * | 2003-08-21 | 2013-07-22 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101242886B1 (ko) | 2003-08-29 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP3223053A1 (en) * | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP3093711A3 (en) | 2003-09-29 | 2017-05-24 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
SG2014014955A (en) | 2003-12-03 | 2014-07-30 | Nippon Kogaku Kk | Exposure apparatus, exposure method, method for producing device, and optical part |
KR101499405B1 (ko) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
KR100557222B1 (ko) * | 2004-04-28 | 2006-03-07 | 동부아남반도체 주식회사 | 이머전 리소그라피 공정의 액체 제거 장치 및 방법 |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
KR101433496B1 (ko) | 2004-06-09 | 2014-08-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE602005016429D1 (de) | 2004-07-12 | 2009-10-15 | Nippon Kogaku Kk | Hren |
JP4983257B2 (ja) * | 2004-08-18 | 2012-07-25 | 株式会社ニコン | 露光装置、デバイス製造方法、計測部材、及び計測方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006080143A (ja) | 2004-09-07 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
US7133114B2 (en) * | 2004-09-20 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070242248A1 (en) * | 2004-10-26 | 2007-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device |
WO2006046562A1 (ja) * | 2004-10-26 | 2006-05-04 | Nikon Corporation | 基板処理方法、露光装置及びデバイス製造方法 |
US7414699B2 (en) * | 2004-11-12 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
JP4794232B2 (ja) * | 2004-12-06 | 2011-10-19 | 株式会社Sokudo | 基板処理装置 |
JP5154007B2 (ja) | 2004-12-06 | 2013-02-27 | 株式会社Sokudo | 基板処理装置 |
EP1833082A4 (en) * | 2004-12-06 | 2010-03-24 | Nikon Corp | SUBSTRATE PROCESSING METHOD, EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1863070B1 (en) | 2005-01-31 | 2016-04-27 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
KR101479392B1 (ko) | 2005-04-28 | 2015-01-05 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20080031376A (ko) * | 2005-07-11 | 2008-04-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP2007103658A (ja) * | 2005-10-04 | 2007-04-19 | Canon Inc | 露光方法および装置ならびにデバイス製造方法 |
US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007135990A1 (ja) * | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
CN102109773A (zh) * | 2006-05-22 | 2011-06-29 | 株式会社尼康 | 曝光方法、曝光装置以及维修方法 |
JP5019170B2 (ja) * | 2006-05-23 | 2012-09-05 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
KR20090033170A (ko) * | 2006-06-30 | 2009-04-01 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법 |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8654305B2 (en) | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
CA2699803C (en) | 2007-09-13 | 2013-01-15 | Applied Precision, Inc. | Method of dispersing immersion liquid on a specimen substrate for high resolution imaging and lithographie |
KR101448152B1 (ko) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
JP5199982B2 (ja) | 2008-12-08 | 2013-05-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
NL2005528A (en) * | 2009-12-02 | 2011-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2005717A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
US9222194B2 (en) | 2010-08-19 | 2015-12-29 | International Business Machines Corporation | Rinsing and drying for electrochemical processing |
US9570576B2 (en) * | 2013-12-10 | 2017-02-14 | Infineon Technologies Ag | Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation |
JP6232138B2 (ja) | 2013-12-13 | 2017-11-15 | ベンタナ メディカル システムズ, インコーポレイテッド | 生物学的試料の組織学的処理のための染色試薬および他の液体ならびに関連技術 |
DE112014005277T5 (de) * | 2014-06-12 | 2016-10-06 | Fuji Electric Co., Ltd. | Vorrichtung zum Einbringen von Verunreinigungen, Verfahren zum Einbringen von Verunreinigungen und Verfahren zur Herstellung eines Halbleiterelements |
JP6251825B2 (ja) | 2014-06-16 | 2017-12-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、及び基板を搬送する方法 |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JPH09283401A (ja) * | 1996-04-09 | 1997-10-31 | Nikon Corp | 露光装置 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JP2001227868A (ja) * | 2000-02-14 | 2001-08-24 | Hitachi Electronics Eng Co Ltd | 基板乾燥装置及び乾燥方法 |
JP2002016124A (ja) * | 2000-06-28 | 2002-01-18 | Sony Corp | ウェーハ搬送アーム機構 |
JP2002289575A (ja) * | 2001-03-28 | 2002-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
JP2003007669A (ja) * | 2001-06-25 | 2003-01-10 | Tokyo Electron Ltd | 基板の処理装置 |
JP2003178943A (ja) * | 2001-12-10 | 2003-06-27 | Tokyo Electron Ltd | 現像処理方法及び現像処理装置 |
WO2004102646A1 (ja) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005022616A1 (ja) * | 2003-08-29 | 2005-03-10 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005024325A2 (en) * | 2003-08-29 | 2005-03-17 | Tokyo Electron Limited | Method and system for drying a substrate |
JP2005086030A (ja) * | 2003-09-09 | 2005-03-31 | Canon Inc | 露光装置及び露光装置の制御方法 |
JP2005101487A (ja) * | 2002-12-10 | 2005-04-14 | Nikon Corp | 露光装置及びデバイス製造方法、露光システム |
WO2005036623A1 (ja) * | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
WO2005036621A1 (ja) * | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
JP2005183656A (ja) * | 2003-12-19 | 2005-07-07 | Canon Inc | 露光装置 |
JP2005197469A (ja) * | 2004-01-07 | 2005-07-21 | Tokyo Electron Ltd | 塗布・現像装置及び塗布・現像方法 |
JP2006523031A (ja) * | 2003-04-11 | 2006-10-05 | 株式会社ニコン | 液浸リソグラフィにおける光学素子の洗浄方法 |
Family Cites Families (203)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE221563C (ja) | ||||
DE224448C (ja) | ||||
DE206207C (ja) | ||||
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS62188322A (ja) * | 1986-02-14 | 1987-08-17 | Hitachi Micro Comput Eng Ltd | 洗浄装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH1133506A (ja) * | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
JP3511441B2 (ja) * | 1996-11-29 | 2004-03-29 | 忠弘 大見 | 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、ウエット処理装置及びウエット処理方法 |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3070511B2 (ja) * | 1997-03-31 | 2000-07-31 | 日本電気株式会社 | 基板乾燥装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
AU1175799A (en) * | 1997-11-21 | 1999-06-15 | Nikon Corporation | Projection aligner and projection exposure method |
JPH11283903A (ja) | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
WO1999031717A1 (fr) | 1997-12-12 | 1999-06-24 | Nikon Corporation | Procede d'exposition par projection et graveur a projection |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
US6254936B1 (en) * | 1998-09-14 | 2001-07-03 | Silicon Valley Group, Inc. | Environment exchange control for material on a wafer surface |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6421932B2 (en) * | 2000-02-14 | 2002-07-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP4189141B2 (ja) * | 2000-12-21 | 2008-12-03 | 株式会社東芝 | 基板処理装置及びこれを用いた基板処理方法 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6810109B2 (en) | 2001-07-13 | 2004-10-26 | Medtronic Ave, Inc. | X-ray emitting system and method |
JP3886424B2 (ja) * | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
CN1791839A (zh) * | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
AU2003256081A1 (en) | 2002-08-23 | 2004-03-11 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
TWI232357B (en) * | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) * | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US6829035B2 (en) * | 2002-11-12 | 2004-12-07 | Applied Materials Israel, Ltd. | Advanced mask cleaning and handling |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE60319658T2 (de) * | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
SG171468A1 (en) * | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
CN1723539B (zh) | 2002-12-10 | 2010-05-26 | 株式会社尼康 | 曝光装置和曝光方法以及器件制造方法 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1571696A4 (en) | 2002-12-10 | 2008-03-26 | Nikon Corp | EXPOSURE DEVICE AND METHOD OF MANUFACTURE |
AU2003302830A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
JP4179283B2 (ja) | 2002-12-10 | 2008-11-12 | 株式会社ニコン | 光学素子及びその光学素子を用いた投影露光装置 |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
CN100446179C (zh) * | 2002-12-10 | 2008-12-24 | 株式会社尼康 | 曝光设备和器件制造法 |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
JP4184346B2 (ja) * | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
US7514699B2 (en) | 2002-12-19 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
EP1732075A3 (en) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
TWI247339B (en) | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
EP2950148B1 (en) | 2003-04-10 | 2016-09-21 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101431938B1 (ko) * | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
US6995833B2 (en) * | 2003-05-23 | 2006-02-07 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TWI612556B (zh) | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光裝置、曝光方法及元件製造方法 |
TW594841B (en) * | 2003-05-28 | 2004-06-21 | Au Optronics Corp | Apparatus and method for preventing contamination of substrate from condensate liquid |
EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP2007527615A (ja) | 2003-07-01 | 2007-09-27 | 株式会社ニコン | 同位体特定流体の光学素子としての使用方法 |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
SG109000A1 (en) * | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
JP4305095B2 (ja) * | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
EP3223053A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP2007525824A (ja) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | マイクロチップを製造するための方法および装置 |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
EP1695148B1 (en) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Immersion objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
JP2005183744A (ja) * | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
US7145641B2 (en) * | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101204114B1 (ko) * | 2004-01-14 | 2012-11-23 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
KR101204157B1 (ko) | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
WO2005076321A1 (ja) * | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1714192A1 (en) | 2004-02-13 | 2006-10-25 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
KR20060129387A (ko) | 2004-02-19 | 2006-12-15 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 디바이스 제조 방법 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100514996B1 (ko) | 2004-04-19 | 2005-09-15 | 주식회사 이오테크닉스 | 레이저 가공 장치 |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) * | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20160085375A (ko) | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7414699B2 (en) * | 2004-11-12 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7248334B2 (en) * | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
-
2004
- 2004-05-18 US US10/847,661 patent/US7616383B2/en not_active Expired - Fee Related
-
2005
- 2005-05-11 EP EP05252882A patent/EP1598705A1/en not_active Withdrawn
- 2005-05-11 EP EP10180507A patent/EP2267538B1/en not_active Not-in-force
- 2005-05-13 SG SG200502893A patent/SG117565A1/en unknown
- 2005-05-17 CN CNB2005100713480A patent/CN100524033C/zh active Active
- 2005-05-17 KR KR1020050041315A patent/KR100610646B1/ko active IP Right Grant
- 2005-05-17 JP JP2005143396A patent/JP4669735B2/ja not_active Expired - Fee Related
- 2005-05-17 CN CN2009101488825A patent/CN101587303B/zh active Active
- 2005-05-17 TW TW094115923A patent/TWI266964B/zh not_active IP Right Cessation
-
2009
- 2009-02-26 JP JP2009044651A patent/JP4997258B2/ja active Active
- 2009-09-25 US US12/567,617 patent/US8638415B2/en not_active Expired - Fee Related
-
2010
- 2010-06-09 JP JP2010132174A patent/JP5236691B2/ja active Active
-
2014
- 2014-01-23 US US14/162,435 patent/US9623436B2/en not_active Expired - Fee Related
-
2017
- 2017-04-06 US US15/481,405 patent/US10761438B2/en not_active Expired - Lifetime
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JPH09283401A (ja) * | 1996-04-09 | 1997-10-31 | Nikon Corp | 露光装置 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JP2001227868A (ja) * | 2000-02-14 | 2001-08-24 | Hitachi Electronics Eng Co Ltd | 基板乾燥装置及び乾燥方法 |
JP2002016124A (ja) * | 2000-06-28 | 2002-01-18 | Sony Corp | ウェーハ搬送アーム機構 |
JP2002289575A (ja) * | 2001-03-28 | 2002-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
JP2003007669A (ja) * | 2001-06-25 | 2003-01-10 | Tokyo Electron Ltd | 基板の処理装置 |
JP2003178943A (ja) * | 2001-12-10 | 2003-06-27 | Tokyo Electron Ltd | 現像処理方法及び現像処理装置 |
JP2005101487A (ja) * | 2002-12-10 | 2005-04-14 | Nikon Corp | 露光装置及びデバイス製造方法、露光システム |
JP2006523031A (ja) * | 2003-04-11 | 2006-10-05 | 株式会社ニコン | 液浸リソグラフィにおける光学素子の洗浄方法 |
WO2004102646A1 (ja) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005022616A1 (ja) * | 2003-08-29 | 2005-03-10 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005024325A2 (en) * | 2003-08-29 | 2005-03-17 | Tokyo Electron Limited | Method and system for drying a substrate |
JP2007504646A (ja) * | 2003-08-29 | 2007-03-01 | 東京エレクトロン株式会社 | 基板を乾燥させる方法とシステム。 |
JP2005086030A (ja) * | 2003-09-09 | 2005-03-31 | Canon Inc | 露光装置及び露光装置の制御方法 |
WO2005036623A1 (ja) * | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
WO2005036621A1 (ja) * | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
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US20170235236A1 (en) | 2017-08-17 |
TWI266964B (en) | 2006-11-21 |
US9623436B2 (en) | 2017-04-18 |
CN100524033C (zh) | 2009-08-05 |
EP1598705A1 (en) | 2005-11-23 |
CN101587303A (zh) | 2009-11-25 |
SG117565A1 (en) | 2005-12-29 |
US7616383B2 (en) | 2009-11-10 |
JP2010239146A (ja) | 2010-10-21 |
EP2267538A1 (en) | 2010-12-29 |
US20050259232A1 (en) | 2005-11-24 |
US20140224173A1 (en) | 2014-08-14 |
KR100610646B1 (ko) | 2006-08-10 |
EP2267538B1 (en) | 2012-03-14 |
JP5236691B2 (ja) | 2013-07-17 |
KR20060047974A (ko) | 2006-05-18 |
CN1700098A (zh) | 2005-11-23 |
US8638415B2 (en) | 2014-01-28 |
JP2009164623A (ja) | 2009-07-23 |
JP4997258B2 (ja) | 2012-08-08 |
TW200608150A (en) | 2006-03-01 |
US10761438B2 (en) | 2020-09-01 |
JP4669735B2 (ja) | 2011-04-13 |
CN101587303B (zh) | 2011-07-20 |
US20100014061A1 (en) | 2010-01-21 |
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