JP4149637B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4149637B2
JP4149637B2 JP2000154983A JP2000154983A JP4149637B2 JP 4149637 B2 JP4149637 B2 JP 4149637B2 JP 2000154983 A JP2000154983 A JP 2000154983A JP 2000154983 A JP2000154983 A JP 2000154983A JP 4149637 B2 JP4149637 B2 JP 4149637B2
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JP
Japan
Prior art keywords
voltage
circuit
node
output
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000154983A
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English (en)
Japanese (ja)
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JP2001338493A (ja
JP2001338493A5 (enExample
Inventor
徹 丹沢
武史 宮葉
滋 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000154983A priority Critical patent/JP4149637B2/ja
Priority to US09/864,181 priority patent/US6487120B2/en
Priority to EP01112062A priority patent/EP1158524A1/en
Publication of JP2001338493A publication Critical patent/JP2001338493A/ja
Priority to US10/265,727 priority patent/US6605986B2/en
Priority to US10/464,462 priority patent/US6771547B2/en
Priority to US10/866,131 priority patent/US6996024B2/en
Publication of JP2001338493A5 publication Critical patent/JP2001338493A5/ja
Priority to US11/269,696 priority patent/US7203120B2/en
Priority to US11/269,697 priority patent/US7180796B2/en
Application granted granted Critical
Publication of JP4149637B2 publication Critical patent/JP4149637B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Power Sources (AREA)
JP2000154983A 2000-05-25 2000-05-25 半導体装置 Expired - Fee Related JP4149637B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000154983A JP4149637B2 (ja) 2000-05-25 2000-05-25 半導体装置
US09/864,181 US6487120B2 (en) 2000-05-25 2001-05-25 Boosted voltage generating circuit and semiconductor memory device having the same
EP01112062A EP1158524A1 (en) 2000-05-25 2001-05-25 Semiconductor memory device having a boosted voltage generating circuit
US10/265,727 US6605986B2 (en) 2000-05-25 2002-10-08 Boosted voltage generating circuit and semiconductor memory device having the same
US10/464,462 US6771547B2 (en) 2000-05-25 2003-06-19 Boosted voltage generating circuit and semiconductor memory device having the same
US10/866,131 US6996024B2 (en) 2000-05-25 2004-06-14 Boosted voltage generating circuit and semiconductor memory device having the same
US11/269,696 US7203120B2 (en) 2000-05-25 2005-11-09 Boosted voltage generating circuit and semiconductor memory device having the same
US11/269,697 US7180796B2 (en) 2000-05-25 2005-11-09 Boosted voltage generating circuit and semiconductor memory device having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000154983A JP4149637B2 (ja) 2000-05-25 2000-05-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2001338493A JP2001338493A (ja) 2001-12-07
JP2001338493A5 JP2001338493A5 (enExample) 2005-08-25
JP4149637B2 true JP4149637B2 (ja) 2008-09-10

Family

ID=18659994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000154983A Expired - Fee Related JP4149637B2 (ja) 2000-05-25 2000-05-25 半導体装置

Country Status (3)

Country Link
US (6) US6487120B2 (enExample)
EP (1) EP1158524A1 (enExample)
JP (1) JP4149637B2 (enExample)

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Also Published As

Publication number Publication date
US20030210089A1 (en) 2003-11-13
US6771547B2 (en) 2004-08-03
US20060055452A1 (en) 2006-03-16
EP1158524A1 (en) 2001-11-28
US7203120B2 (en) 2007-04-10
US7180796B2 (en) 2007-02-20
JP2001338493A (ja) 2001-12-07
US6605986B2 (en) 2003-08-12
US20060055453A1 (en) 2006-03-16
US20030112056A1 (en) 2003-06-19
US20040240271A1 (en) 2004-12-02
US6996024B2 (en) 2006-02-07
US20020003724A1 (en) 2002-01-10
US6487120B2 (en) 2002-11-26

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