JP3437863B2 - Ｍｉｓ型半導体装置の作製方法 - Google Patents

Ｍｉｓ型半導体装置の作製方法

Info

Publication number
JP3437863B2
JP3437863B2 JP32311793A JP32311793A JP3437863B2 JP 3437863 B2 JP3437863 B2 JP 3437863B2 JP 32311793 A JP32311793 A JP 32311793A JP 32311793 A JP32311793 A JP 32311793A JP 3437863 B2 JP3437863 B2 JP 3437863B2
Authority
JP
Japan
Prior art keywords
region
gate electrode
oxide
impurity
impurity region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32311793A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06267982A (ja
Inventor
舜平 山崎
保彦 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP32311793A priority Critical patent/JP3437863B2/ja
Priority to TW083100209A priority patent/TW234771B/zh
Priority to CN2006100944920A priority patent/CN101090124B/zh
Priority to CN94101918A priority patent/CN1058108C/zh
Priority to CNB2004100422940A priority patent/CN1297007C/zh
Priority to KR1019940001012A priority patent/KR0145458B1/ko
Priority to US08/181,907 priority patent/US5627084A/en
Publication of JPH06267982A publication Critical patent/JPH06267982A/ja
Priority to US08/780,714 priority patent/US5939731A/en
Priority to US08/855,143 priority patent/US6489632B1/en
Priority to KR1019980001815A priority patent/KR0185821B1/ko
Priority to KR1019980001816A priority patent/KR0185822B1/ko
Priority to CNB981159605A priority patent/CN1156016C/zh
Priority to US10/301,777 priority patent/US6995432B2/en
Application granted granted Critical
Publication of JP3437863B2 publication Critical patent/JP3437863B2/ja
Priority to US11/178,308 priority patent/US7408233B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP32311793A 1919-01-18 1993-11-29 Ｍｉｓ型半導体装置の作製方法 Expired - Fee Related JP3437863B2 (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP32311793A JP3437863B2 (ja) 1993-01-18 1993-11-29 Ｍｉｓ型半導体装置の作製方法
TW083100209A TW234771B (ref) 1993-01-18 1994-01-12
CN2006100944920A CN101090124B (zh) 1993-01-18 1994-01-18 半导体器件
CN94101918A CN1058108C (zh) 1993-01-18 1994-01-18 Mis半导体器件的制造方法
CNB2004100422940A CN1297007C (zh) 1993-01-18 1994-01-18 半导体器件
KR1019940001012A KR0145458B1 (ko) 1993-01-18 1994-01-18 Mis형 반도체 장치 제작방법
US08/181,907 US5627084A (en) 1993-01-18 1994-01-18 Method for fabricating MIS semiconductor device
US08/780,714 US5939731A (en) 1993-01-18 1997-01-08 MIS semiconductor device and method for fabricating the same
US08/855,143 US6489632B1 (en) 1993-01-18 1997-05-13 Semiconductor device having a gate oxide film
KR1019980001815A KR0185821B1 (ko) 1993-01-18 1998-01-22 반도체장치
KR1019980001816A KR0185822B1 (ko) 1993-01-18 1998-01-22 반도체장치
CNB981159605A CN1156016C (zh) 1993-01-18 1998-07-07 金属绝缘体半导体类型的半导体器件及其制造方法
US10/301,777 US6995432B2 (en) 1993-01-18 2002-11-22 Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions
US11/178,308 US7408233B2 (en) 1919-01-18 2005-07-12 Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5-23287 1993-01-18
JP2328793 1993-01-18
JP32311793A JP3437863B2 (ja) 1993-01-18 1993-11-29 Ｍｉｓ型半導体装置の作製方法

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP22010499A Division JP3695573B2 (ja) 1993-01-18 1999-08-03 半導体装置の作製方法
JP11220076A Division JP2000058858A (ja) 1993-01-18 1999-08-03 Ｍｉｓ型半導体装置
JP11220092A Division JP2000068522A (ja) 1993-01-18 1999-08-03 Ｍｉｓ型半導体装置
JP22008699A Division JP3695572B2 (ja) 1993-01-18 1999-08-03 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH06267982A JPH06267982A (ja) 1994-09-22
JP3437863B2 true JP3437863B2 (ja) 2003-08-18

Family

ID=26360618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32311793A Expired - Fee Related JP3437863B2 (ja) 1919-01-18 1993-11-29 Ｍｉｓ型半導体装置の作製方法

Country Status (5)

Country Link
US (5) US5627084A (ref)
JP (1) JP3437863B2 (ref)
KR (1) KR0145458B1 (ref)
CN (4) CN101090124B (ref)
TW (1) TW234771B (ref)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
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US5627084A (en) 1997-05-06
CN1092556A (zh) 1994-09-21
TW234771B (ref) 1994-11-21
US6995432B2 (en) 2006-02-07
US6489632B1 (en) 2002-12-03
US20050250266A1 (en) 2005-11-10
US7408233B2 (en) 2008-08-05
US20030107036A1 (en) 2003-06-12
CN1219775A (zh) 1999-06-16
CN1538522A (zh) 2004-10-20
CN101090124B (zh) 2011-11-02
US5939731A (en) 1999-08-17
CN1058108C (zh) 2000-11-01
CN1297007C (zh) 2007-01-24

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