JP2014205902A - 金属酸化物膜及び金属酸化物膜の成膜方法 - Google Patents

金属酸化物膜及び金属酸化物膜の成膜方法 Download PDF

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JP2014205902A
JP2014205902A JP2013230075A JP2013230075A JP2014205902A JP 2014205902 A JP2014205902 A JP 2014205902A JP 2013230075 A JP2013230075 A JP 2013230075A JP 2013230075 A JP2013230075 A JP 2013230075A JP 2014205902 A JP2014205902 A JP 2014205902A
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metal oxide
oxide film
film
diffraction pattern
observed
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JP2014205902A5 (ja
Inventor
高橋　正弘
Masahiro Takahashi
正弘 高橋
拓也 廣橋
Takuya Hirohashi
拓也 廣橋
将志 津吹
Masashi Tsubuki
将志 津吹
典隆 石原
Noritaka Ishihara
典隆 石原
将志 太田
Masashi Ota
将志 太田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013230075A priority Critical patent/JP2014205902A/ja
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Publication of JP2014205902A5 publication Critical patent/JP2014205902A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Chemical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Liquid Crystal (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Geometry (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Vehicle Body Suspensions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
JP2013230075A 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法 Withdrawn JP2014205902A (ja)

Priority Applications (1)

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JP2013230075A JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法

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JP2012245992 2012-11-08
JP2012245992 2012-11-08
JP2013016242 2013-01-30
JP2013016242 2013-01-30
JP2013056768 2013-03-19
JP2013056768 2013-03-19
JP2013230075A JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法

Related Child Applications (7)

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JP2015085640A Division JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015085638A Division JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015085639A Division JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015180550A Division JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Division JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Division JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Division JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ

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JP2014205902A true JP2014205902A (ja) 2014-10-30
JP2014205902A5 JP2014205902A5 (ja) 2017-04-20

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JP2013230075A Withdrawn JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法
JP2015085639A Withdrawn JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015085638A Active JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015085640A Active JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015180550A Active JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Active JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Active JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Active JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ
JP2019053970A Active JP6556396B1 (ja) 2012-11-08 2019-03-21 表示装置
JP2019053969A Active JP6556395B2 (ja) 2012-11-08 2019-03-21 トランジスタ
JP2019127461A Active JP6634539B2 (ja) 2012-11-08 2019-07-09 トランジスタ
JP2019226526A Active JP6905042B2 (ja) 2012-11-08 2019-12-16 トランジスタ
JP2021105134A Active JP7193584B2 (ja) 2012-11-08 2021-06-24 トランジスタ、及び表示装置
JP2022196356A Active JP7475422B2 (ja) 2012-11-08 2022-12-08 表示装置
JP2024065966A Active JP7676094B2 (ja) 2012-11-08 2024-04-16 表示装置
JP2025075045A Active JP7834914B2 (ja) 2012-11-08 2025-04-29 表示装置

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JP2015085639A Withdrawn JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015085638A Active JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015085640A Active JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015180550A Active JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Active JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Active JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Active JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ
JP2019053970A Active JP6556396B1 (ja) 2012-11-08 2019-03-21 表示装置
JP2019053969A Active JP6556395B2 (ja) 2012-11-08 2019-03-21 トランジスタ
JP2019127461A Active JP6634539B2 (ja) 2012-11-08 2019-07-09 トランジスタ
JP2019226526A Active JP6905042B2 (ja) 2012-11-08 2019-12-16 トランジスタ
JP2021105134A Active JP7193584B2 (ja) 2012-11-08 2021-06-24 トランジスタ、及び表示装置
JP2022196356A Active JP7475422B2 (ja) 2012-11-08 2022-12-08 表示装置
JP2024065966A Active JP7676094B2 (ja) 2012-11-08 2024-04-16 表示装置
JP2025075045A Active JP7834914B2 (ja) 2012-11-08 2025-04-29 表示装置

Country Status (8)

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US (8) US9881939B2 (https=)
JP (16) JP2014205902A (https=)
KR (11) KR20160042465A (https=)
CN (5) CN105734493B (https=)
DE (2) DE112013005331T5 (https=)
IN (1) IN2015DN03772A (https=)
TW (5) TWI649794B (https=)
WO (1) WO2014073585A1 (https=)

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JP2015046499A (ja) * 2013-08-28 2015-03-12 三菱電機株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP2017123485A (ja) * 2012-11-08 2017-07-13 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2017125797A1 (ja) * 2016-01-18 2017-07-27 株式会社半導体エネルギー研究所 金属酸化物膜及びその形成方法、ならびに半導体装置
JP2017188674A (ja) * 2016-04-01 2017-10-12 株式会社半導体エネルギー研究所 複合酸化物半導体、およびその作製方法
WO2018221294A1 (ja) * 2017-05-31 2018-12-06 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JP2020205437A (ja) * 2016-03-22 2020-12-24 株式会社半導体エネルギー研究所 トランジスタ
JP2025036491A (ja) * 2016-05-19 2025-03-14 株式会社半導体エネルギー研究所 複合酸化物半導体
WO2025186692A1 (ja) * 2024-03-08 2025-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
US9244025B2 (en) * 2013-07-05 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
WO2015125042A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI663726B (zh) * 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
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JP6915538B2 (ja) * 2015-08-24 2021-08-04 日本ゼオン株式会社 非水系二次電池機能層用組成物、非水系二次電池用機能層、及び非水系二次電池
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
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US11302717B2 (en) 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
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