JP2013508984A - 曲線状のゲート酸化物プロファイルを有するスプリットゲート半導体素子 - Google Patents
曲線状のゲート酸化物プロファイルを有するスプリットゲート半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 118
- 239000000463 material Substances 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000001154 acute effect Effects 0.000 description 4
- 238000005389 semiconductor device fabrication Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
【選択図】図1A
Description
当業者であれば、種々の図面中に図示される以下の詳細な説明を読めば、本発明の上記及び他の目的及び利点を認識できるであろう。
SAUSG)を含む。前記凹部に誘電材料が補充される際にポリ1領域714及び818の表面内の欠陥又は空隙は全て充填されるため、適切なプロファイルが達成され、プロファイル変形が回避される。
本文書は、少なくとも以下のコンセプトを開示する。
コンセプト1.
ソース領域と;
ドレイン領域と;
第1の電極領域及び第2の電極領域を含むトレンチゲートであって、前記第1の電極領域及び前記第2の電極領域は、誘電層に隣接するゲート酸化物層によって相互に分離され、前記ゲート酸化物層と前記誘電層との間の境界は曲線状であるトレンチゲートと
を具備した半導体素子。
コンセプト2.
前記第1の電極領域及び前記第2の電極領域はポリシリコンを含むコンセプト1の半導体素子。
コンセプト3.
前記誘電層は第2の誘電層を含み、前記第2の誘電層は、第1の誘電層の後に形成され且つ前記第1の誘電層を前記ゲート酸化物層から分離させるコンセプト1の半導体素子。
コンセプト4.
前記境界は、前記誘電層に対して凹状であり、前記ゲート酸化物層に対して凸状であるコンセプト1の半導体素子。
コンセプト5.
前記誘電層は準大気圧未ドープシリコンガラス(SAUSG)を含むコンセプト1の半導体素子。
コンセプト6.
パワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含むコンセプト1の半導体素子。
コンセプト7.
前記ゲート酸化物層は前記第2の電極領域も前記ソース領域から分離させるコンセプト1の半導体素子。
コンセプト8.
半導体素子であって、
ソース領域と;
ドレイン領域と;
前記半導体素子内のトレンチ状のキャビティ内に形成されたゲートであって、前記ゲートは、
第1の電極領域と;
第2の電極領域と;
前記第1の領域と前記第2の電極領域との間の前記ゲートの幅を横断する表面を有する誘電領域であって、前記表面は凹状である誘電領域と
を含むゲートと
を具備した半導体素子。
コンセプト9.
前記第1の電極領域及び前記第2の電極領域はポリシリコンを含むコンセプト8の半導体素子。
コンセプト10.
前記誘電領域を前記第2の電極領域から分離させるゲート酸化物層をさらに含むコンセプト8の半導体素子。
コンセプト11.
前記誘電領域は第2の誘電層を含み、前記第2の誘電層は、第1の誘電層の後に形成され且つ前記第1の誘電層を前記ゲート酸化物層から分離させるコンセプト10の半導体素子。
コンセプト12.
前記誘電領域は準大気圧未ドープシリコンガラス(SAUSG)を含むコンセプト8の半導体素子。
コンセプト13.
パワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含むコンセプト8の半導体素子。
コンセプト14.
前記ゲート酸化物層は前記第2の電極領域も前記ソース領域から分離させるコンセプト1の半導体素子。
コンセプト15.
半導体素子内にスプリットゲートを作製する方法であって、
前記半導体素子内のトレンチ状のキャビティの側壁に沿って第1の誘電領域を形成することと;
前記キャビティ内に第1のゲート電極領域を形成することと;
前記キャビティ中に第2の誘電領域を形成することと;
前記第2の誘電領域をエッチバックして凹状表面を形成することと;
前記キャビティ内に第2のゲート電極領域を形成することと
を含んだ方法。
コンセプト16.
前記第2の誘電領域を形成する前に前記第1の誘電領域をエッチバックすることをさらに含むコンセプト15の方法。
コンセプト17.
前記第2のゲート電極領域を形成する前に、前記凹状表面上に且つ前記側壁に沿ってゲート酸化物層を生成することをさらに含むコンセプト15の方法。
コンセプト18.
前記第1の誘電領域を形成する前に、前記側壁に沿って熱酸化物層を生成することをさらに含むコンセプト15の方法。
コンセプト19.
ソース及びドレイン領域を形成する工程をさらに含むコンセプト15の方法。
コンセプト20.
前記半導体素子はパワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含むコンセプト15の方法。
Claims (20)
- ソース領域と;
ドレイン領域と;
第1の電極領域及び第2の電極領域を含むトレンチゲートであって、前記第1の電極領域及び前記第2の電極領域は、誘電層に隣接するゲート酸化物層によって相互に分離され、前記ゲート酸化物層と前記誘電層との間の境界は曲線状であるトレンチゲートと
を具備した半導体素子。
- 前記第1の電極領域及び前記第2の電極領域はポリシリコンを含む請求項1の半導体素子。
- 前記誘電層は第2の誘電層を含み、前記第2の誘電層は、第1の誘電層の後に形成され且つ前記第1の誘電層を前記ゲート酸化物層から分離させる請求項1の半導体素子。
- 前記境界は、前記誘電層に対して凹状であり、前記ゲート酸化物層に対して凸状である請求項1の半導体素子。
- 前記誘電層は準大気圧未ドープシリコンガラス(SAUSG)を含む請求項1の半導体素子。
- パワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含む請求項1の半導体素子。
- 前記ゲート酸化物層は前記第2の電極領域も前記ソース領域から分離させる請求項1の半導体素子。
- 半導体素子であって、
ソース領域と;
ドレイン領域と;
前記半導体素子内のトレンチ状のキャビティ内に形成されたゲートであって、前記ゲートは、
第1の電極領域と;
第2の電極領域と;
前記第1の領域と前記第2の電極領域との間の前記ゲートの幅を横断する表面を有する誘電領域であって、前記表面は凹状である誘電領域と
を含むゲートと
を具備した半導体素子。
- 前記第1の電極領域及び前記第2の電極領域はポリシリコンを含む請求項8の半導体素子。
- 前記誘電領域を前記第2の電極領域から分離させるゲート酸化物層をさらに含む請求項8の半導体素子。
- 前記誘電領域は第2の誘電層を含み、前記第2の誘電層は、第1の誘電層の後に形成され且つ前記第1の誘電層を前記ゲート酸化物層から分離させる請求項10の半導体素子。
- 前記誘電領域は準大気圧未ドープシリコンガラス(SAUSG)を含む請求項8の半導体素子。
- パワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含む請求項8の半導体素子。
- 前記ゲート酸化物層は前記第2の電極領域も前記ソース領域から分離させる請求項1の半導体素子。
- 半導体素子内にスプリットゲートを作製する方法であって、
前記半導体素子内のトレンチ状のキャビティの側壁に沿って第1の誘電領域を形成することと;
前記キャビティ内に第1のゲート電極領域を形成することと;
前記キャビティ中に第2の誘電領域を形成することと;
前記第2の誘電領域をエッチバックして凹状表面を形成することと;
前記キャビティ内に第2のゲート電極領域を形成することと
を含んだ方法。
- 前記第2の誘電領域を形成する前に前記第1の誘電領域をエッチバックすることをさらに含む請求項15の方法。
- 前記第2のゲート電極領域を形成する前に、前記凹状表面上に且つ前記側壁に沿ってゲート酸化物層を生成することをさらに含む請求項15の方法。
- 前記第1の誘電領域を形成する前に、前記側壁に沿って熱酸化物層を生成することをさらに含む請求項15の方法。
- ソース及びドレイン領域を形成する工程をさらに含む請求項15の方法。
- 前記半導体素子はパワー金属酸化膜半導体電界効果トランジスタ(MOSFET)素子を含む請求項15の方法。
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WO2011050207A3 (en) | 2011-08-18 |
CN102656696A (zh) | 2012-09-05 |
KR101493680B1 (ko) | 2015-02-16 |
US20160359018A1 (en) | 2016-12-08 |
EP2491593B1 (en) | 2018-03-21 |
CN102656696B (zh) | 2015-09-30 |
US20110089485A1 (en) | 2011-04-21 |
KR20120089679A (ko) | 2012-08-13 |
EP2491593A2 (en) | 2012-08-29 |
JP5932651B2 (ja) | 2016-06-08 |
US9419129B2 (en) | 2016-08-16 |
US9893168B2 (en) | 2018-02-13 |
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