KR100657098B1 - 전계 효과 트랜지스터 및 전계 효과 트랜지스터 제조 방법 - Google Patents
전계 효과 트랜지스터 및 전계 효과 트랜지스터 제조 방법 Download PDFInfo
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Abstract
Description
Claims (21)
- 로컬 소스-드레인 절연부를 갖는 전계 효과 트랜지스터에 있어서,반도체 기판(1)과,상기 반도체 기판(1)에서 서로 이격되는 방식으로 형성되는, 소스 함몰부(depression)(SV) 및 드레인 함몰부(DV)와,상기 소스 함몰부(SV) 및 상기 드레인 함몰부(DV)의 적어도 바닥 영역에 형성되는 함몰부 절연층(VI)과,상기 함몰부 절연층(VI)의 표면에서 소스 및 드레인 영역(S, D)을 실현하고, 상기 소스 및 드레인 함몰부(SV, DV)를 충진하기 위한 전기 전도 충진층(F)과,상기 소스 및 드레인 함몰부(SV, DV) 사이의 기판 표면(SO)에 형성되는 게이트 유전체(3)와,상기 게이트 유전체(3)의 표면에 형성되는 게이트층(4)을 포함하되,상기 소스 및 드레인 함몰부(SV, DV)는, 상부 영역에, 사전결정된 깊이(d1)를 갖는 확장부(widening)(V1)를 가져서, 정의된 채널 접속 영역(KA)을 실현하는전계 효과 트랜지스터.
- 제 1 항에 있어서,상기 함몰부 절연층(VI)는 함몰부 측벽 절연층(8A)을 더 갖되, 상기 함몰부 측벽 절연층(8A)은 상기 소스 및 드레인 함몰부(SV, DV)의 측벽 영역에 형성되지만, 상기 게이트 유전체(3)와 접촉되지는 않는 전계 효과 트랜지스터.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 전도 충진층(F)은 상기 소스 및 드레인 함몰부(SV, DV)에서의 침착을 개선하기 위해 시드층(seed layer)(10)을 갖는 전계 효과 트랜지스터.
- 제 1 항 또는 제 2 항에 있어서,상기 게이트층(4)은 그의 측벽에 형성된 게이트 절연층(6)을 갖는 전계 효과 트랜지스터.
- 제 1 항 또는 제 2 항에 있어서,얕은 트렌치 분리부(shallow trench isolation)(2)에 의해 바운딩되는 전계 효과 트랜지스터.
- 제 1 항 또는 제 2 항에 있어서,100㎚ 미만의 측방향 구조를 갖는 전계 효과 트랜지스터.
- 제 1 항 또는 제 2 항에 있어서,상기 소스 및 드레인 함몰부(SV, DV)는 대략 50㎚ 내지 300㎚의 깊이(d1 + d2)를 갖는 전계 효과 트랜지스터.
- 제 2 항에 있어서,상기 함몰부 측벽 절연층(8A)은 상기 게이트 유전체(3) 아래의 영역으로 확장되는 전계 효과 트랜지스터.
- 로컬 소스/드레인 절연부를 갖는 전계 효과 트랜지스터를 제조하는 방법에 있어서,a) 반도체 기판(1)상에 게이트층(4) 및 게이트 유전체(3)를 갖는 게이트 스택을 형성 및 패터닝하는 단계와,b) 상기 반도체 기판(1)에서의 상기 게이트 스택(3, 4, 5, 6)에 소스 및 드레인 함몰부(SV, DV, V1, V2)를 형성하는 단계와,c) 상기 소스 및 드레인 함몰부(SV, DV)의 적어도 바닥 영역에 함몰부 절연층(8, 8A, 9)을 형성하는 단계와,d) 적어도 부분적으로 절연된 상기 소스 및 드레인 함몰부(SV, DV)를 충진층(F; 10, 13)으로 충진하여, 소스 및 드레인 영역(S, D)을 실현하는 단계를 포함하되,단계 b)에서,상기 반도체 기판(1)에 채널 접속 영역(KA)을 실현하기 위해 제 1 함몰부(V1)를 형성하고,상기 게이트 스택(3, 4, 5, 6)에 스페이서(7)를 형성하고,상기 제 1 함몰부(V1) 및 상기 반도체 기판(1)에서 상기 스페이서(7)를 마스크로서 이용하여 제 2 함몰부(V2)를 형성하는전계 효과 트랜지스터 제조 방법.
- 제 9 항에 있어서,단계 a)에서,얕은 트렌치 분리부(2)를 형성하기 위해 STI 방법을 수행하고,상기 반도체 기판(1)에 웰(well) 및/또는 채널 도핑 영역을 형성하기 위해 주입(implantation)을 수행하고,상기 게이트 유전체(3)를 형성하기 위해 열 산화를 수행하고,상기 게이트층(4)을 형성하기 위해 반도체 물질의 침착을 수행하고,하드 마스크층(hard mask layer)(5)을 형성하기 위해 TEOS 침착을 수행하고,상기 하드 마스크층(5)을 이용하여 적어도 상기 게이트층(4)을 패터닝하기 위해 리소그래피 방법을 수행하고,상기 게이트층(4)의 측벽에 게이트 측벽 절연층(6)을 형성하기 위해 또다른 열 산화를 수행하는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,상기 제 1 함몰부(V1)는 이방성 에칭에 의해, 상기 게이트 스택(3, 4, 5, 6) 및 상기 얕은 트렌치 분리층(2)을 마스크로서 이용하여, 기판 표면(SO)으로부터 아래로 대략 10 내지 50㎚의 제 1 깊이(d1)로 형성되는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,상기 스페이서(7)의 형성 이전에, 제 1 반도체 보호층이 적어도 상기 채널 접속 영역(KA)에 형성되는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,상기 스페이서(7)는 실리콘 질화물의 공형(conformal) 침착 및 이방성 에칭백(anisotropic etching-back)에 의해 형성되는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,상기 제 2 함몰부(V2)는 이방성 에칭에 의해, 기판 표면(SO)으로부터 아래로 대략 50 내지 300㎚의 깊이(d1 + d2)로 형성되는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,단계 c)에서,상기 소스 및 드레인 함몰부(SV, DV)에 절연 마스크층(8)을 형성하고, 다시 적어도 상기 바닥 영역에서 제거하며,각각의 경우에 상기 커버되지 않은 바닥 영역에 함몰부 바닥 절연층(9)을 형성하는 전계 효과 트랜지스터 제조 방법.
- 제 15 항에 있어서,남아있는 상기 절연 마스크층(8)을 상기 함몰부의 측벽에서 또한 제거하고,함몰부 측벽 절연층(8A)을 상기 함몰부의 커버되지 않은 측벽 영역에 형성하는 전계 효과 트랜지스터 제조 방법.
- 제 15 항에 있어서,실리콘 질화물층을 절연 마스크층(8)으로서 형성하고,실리콘 2산화물층을 함몰부 바닥 및/또는 측벽 절연층(9, 8A)으로서 형성하는 전계 효과 트랜지스터 제조 방법.
- 제 9 항 또는 제 10 항에 있어서,단계 d)에서,d1) 시드층(10), 시드 보호층(11) 및 시드 마스크층(12)을 전체 영역상에 형성하고,d2) 상기 시드 마스크층(12)을 상기 소스 및 드레인 함몰부(SV, DV)내로 바로 리시딩(receding)하고,d3) 상기 시드 마스크층(12)을 마스크로서 이용하여, 상기 시드 보호층(11)을 부분적으로 제거하고,d4) 리시딩되었던 상기 시드 마스크층(12)을 제거하고,d5) 상기 시드 보호층(11)을 마스크로서 이용하여, 상기 시드층(10)을 부분적으로 제거하고,d6) 상기 시드 보호층(11)을 완전히 제거하고,d7) 기판 표면(SO) 영역 바로 안으로의 상기 시드층(10)상에 성장층(13)을 형성하는 전계 효과 트랜지스터 제조 방법.
- 제 18 항에 있어서,단계 d6)에서, 상기 스페이서(7)를 제거하고,단계 d)에서,d8) 주입 스페이서(14)를 상기 게이트 스택(3, 4, 6)에 형성하고,d9) 상기 하드 마스크층(5)을 제거하고,d10) 상기 게이트층(4) 및 상기 성장층(13)을 도핑하기 위해 주입(I)을 수행하는 전계 효과 트랜지스터 제조 방법.
- 삭제
- 삭제
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DE10246718A DE10246718A1 (de) | 2002-10-07 | 2002-10-07 | Feldeffekttransistor mit lokaler Source-/Drainisolation sowie zugehöriges Herstellungsverfahren |
PCT/DE2003/003130 WO2004034458A1 (de) | 2002-10-07 | 2003-09-19 | Feldeffekttransistor mit lokaler source-/drainisolation sowie zugehöriges herstellungsverfahren |
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EP (2) | EP2657961B1 (ko) |
JP (1) | JP2006502573A (ko) |
KR (1) | KR100657098B1 (ko) |
CN (1) | CN100474535C (ko) |
DE (1) | DE10246718A1 (ko) |
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-
2002
- 2002-10-07 DE DE10246718A patent/DE10246718A1/de not_active Withdrawn
-
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- 2003-09-03 TW TW092124403A patent/TWI227563B/zh not_active IP Right Cessation
- 2003-09-19 EP EP13177706.2A patent/EP2657961B1/de not_active Expired - Lifetime
- 2003-09-19 US US10/530,634 patent/US7528453B2/en not_active Expired - Fee Related
- 2003-09-19 JP JP2004542177A patent/JP2006502573A/ja active Pending
- 2003-09-19 WO PCT/DE2003/003130 patent/WO2004034458A1/de active Application Filing
- 2003-09-19 CN CNB038239167A patent/CN100474535C/zh not_active Expired - Fee Related
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- 2003-09-19 EP EP03750362.0A patent/EP1550154B1/de not_active Expired - Lifetime
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US7528453B2 (en) | 2009-05-05 |
US20160118477A1 (en) | 2016-04-28 |
US20090227083A1 (en) | 2009-09-10 |
CN1689149A (zh) | 2005-10-26 |
WO2004034458A1 (de) | 2004-04-22 |
EP2657961A1 (de) | 2013-10-30 |
EP2657961B1 (de) | 2016-03-23 |
EP1550154B1 (de) | 2015-02-18 |
DE10246718A1 (de) | 2004-04-22 |
CN100474535C (zh) | 2009-04-01 |
JP2006502573A (ja) | 2006-01-19 |
US9240462B2 (en) | 2016-01-19 |
TW200408129A (en) | 2004-05-16 |
KR20050048675A (ko) | 2005-05-24 |
US7824993B2 (en) | 2010-11-02 |
EP1550154A1 (de) | 2005-07-06 |
TWI227563B (en) | 2005-02-01 |
US20110012208A1 (en) | 2011-01-20 |
US20050280052A1 (en) | 2005-12-22 |
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