JP2008546189A - トレンチゲート電界効果トランジスタ及びその製造方法 - Google Patents
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Abstract
Description
Claims (17)
- 電界効果トランジスタであって、
第2導電型の半導体領域上の第1導電型のボディ領域と、
前記ボディ領域を経て伸び、前記半導体領域において終端するゲートトレンチと、
前記ゲートトレンチ内に配置された少なくとも1つの導電性シールド電極と、
少なくとも1つの前記導電性シールド電極上に配置されるが、前記導電性シールドから絶縁されているゲート電極と、
少なくとも1つの前記導電性シールド電極を前記半導体領域から絶縁するシールド誘導体層と、
前記ゲート電極を前記ボディ領域から絶縁するゲート誘電体層と、を含み、
前記シールド誘電体層は前記ボディ領域の下へ直接広がり且つ伸びていることを特徴とする電界効果トランジスタ。 - 前記半導体領域は、
基板領域と、
前記基板領域上のドリフト領域と、を含み、
前記ボディ領域は前記ドリフト領域上に伸び、前記ドリフト領域は前記基板領域より低いドーピング濃度を有しており、前記ゲートトレンチは前記ドリフト領域を経て伸び、前記基板領域内において終端していることを特徴とする請求項1に記載の電界効果トランジスタ。 - 電界効果トランジスタを形成する方法であって、
半導体領域内の第1深さまで伸びる上方トレンチ部を形成するステップと、
前記上方トレンチ部の前記底壁の少なくとも一部分の前記半導体領域が露出されるような材料の保護層で前記上方トレンチ部の側壁の内側を被覆するステップと、
前記上方トレンチ部の前記側壁を保護する前記保護層を伴う前記上方トレンチ部の前記露出した底壁を経て下方トレンチ部を形成するステップと、を含み、
前記上方トレンチ部は前記下方トレンチ部の幅より広い幅を有していることを特徴とする電界効果トランジスタを形成する方法。 - 前記下方トレンチ部の前記側壁及び底壁に沿ったシールド誘電体層を形成するステップと、
前記保護層を除去するステップと、
前記上方トレンチ部に沿った第2絶縁層を形成するステップと、を含み、
前記第1絶縁層は前記第2絶縁層より厚い厚みを有していることを特徴とする請求項3に記載の方法。 - 前記第1絶縁層はシリコン局所酸化(LOCOS)により形成されることを特徴とする請求項4に記載の方法。
- 前記下方トレンチ部に導電性シールド電極を形成するステップと、
前記導電性シールド電極上にインターポリ誘電体を形成するステップと、
前記インターポリ誘電体上にゲート電極を形成するステップと、を含んでいることを特徴とする請求項3に記載の方法。 - 電界効果トランジスタであって、
第2導電型の半導体領域における第1導電型のボディ領域と、
前記ボディ領域を経て伸び、前記半導体領域において終端するゲートトレンチと、
前記ゲートトレンチに隣接する前記ボディ領域における前記第2導電型のソース領域と、
前記ゲートトレンチに隣接する前記第2導電型のチャネルエンハンスメント領域と、を含み、
前記ソース領域及び前記ボディ領域と前記半導体領域との間の界面はこれらの間にチャネル領域を形成し、前記チャネル領域は前記ゲートトレンチ側壁に沿って伸びており、
前記チャネルエンハンスメント領域は前記チャネル領域の下部へ実質的に伸びており、従って、前記チャネル領域の抵抗を低減していることを特徴とする電界効果トランジスタ。 - 前記ゲートトレンチに配置されるゲート電極を含み、前記チャネルエンハンスメント領域は前記トレンチゲート側壁に沿って前記ゲート電極を部分的に被覆していることを特徴とする請求項7に記載の電界効果トランジスタ。
- 前記ゲートトレンチに配置される少なくとも1つの導電性シールド電極と、
少なくとも1つの前記導電性シールド電極から絶縁され、当該電極上のゲートトレンチに配置されているゲート電極と、
少なくとも1つの前記導電性シールド電極を前記半導体領域から絶縁するシールド誘電体層と、
前記ゲート電極を前記ボディ領域から絶縁するゲート誘電体層と、を含んでいることを特徴とする請求項7に記載の電界効果トランジスタ。 - 電界効果トランジスタを形成する方法であって、
半導体領域にトレンチを形成するステップと、
前記トレンチにシールド電極を形成するステップと、
前記トレンチに隣接するチャネルエンハンスメント領域を形成するために前記第1導電型の不純物の傾斜側壁注入を行うステップと、
前記半導体領域に第2導電型のボディ領域を形成するステップと、
前記ボディ領域に前記第1導電型のソース領域を形成するステップと、を含み、
前記ソース領域及び前記ボディ領域と前記半導体領域との間の界面はそれらの間にチャネル領域を形成し、前記チャネル領域は前記ゲートトレンチ側壁に沿って伸び、前記チャネルエンハンスメント領域は前記チャネル領域の下部へ実質的に伸び、従って、前記チャネル領域の抵抗を低減していることを特徴とする電界効果トランジスタを形成する方法。 - 前記シールド電極から絶縁され且つ前記シールド電極の上のゲート電極を形成するステップを含んでいることを特徴とする請求項10に記載の方法。
- 前記チャネルエンハンスメント領域は前記シールド電極に対して自己整合されていることを特徴とする請求項10に記載の方法。
- 電界効果トランジスタであって、
半導体領域に伸びるゲートトレンチと、前記ゲートトレンチはそこに配置された窪んだゲート電極を有しており、
前記ゲートトレンチの各サイドの側壁に位置する半導体領域のソース領域と、
各前記ソース領域の少なくとも1つの側壁に沿った前記ソース領域との電気的接触を形成する前記ゲートトレンチの上部を満たす導電性材料と、を含み、
前記導電性材料は前記窪んだゲート電極から絶縁されていることを特徴とする電界効果トランジスタ。 - 前記半導体領域のボディ領域と、
前記ゲートトレンチにおいて前記窪んだゲート電極の真下に配置された少なくとも1つの導電性シールド電極と、
少なくとも1つの前記導電性シールド電極を前記半導体領域から絶縁するシールド誘電体層と、
前記ゲート電極を前記ボディ領域から絶縁するゲート誘電体層と、を含み、
前記窪んだゲート電極は少なくとも1つの前記導電性シールド電極から絶縁されていることを特徴とする請求項13に記載の電界効果トランジスタ。 - 電界効果トランジスタを形成する方法であって、
半導体領域にトレンチを形成するステップと、
前記トレンチに窪んだゲート電極を形成するステップと、
前記トレンチの各サイドにソース領域を形成するために不純物の2経路の傾斜注入を行うステップと、
前記窪んだゲート電極上に誘電体層を形成するステップと、
前記トレンチを導電性材料で満たすステップと、を含み、前記電導材料は前記ソース領域と電気的接触することを特徴とする電界効果トランジスタを形成する方法。 - 前記窪んだゲートを形成するステップの前に、下方トレンチ側壁及び底壁に沿ったシールド誘電体層を形成するステップと、
前記トレンチに導電性シールド電極を形成するステップと、前記導電性シールド電極は前記シールド誘電体層により前記半導体領域から絶縁されており、
前記窪んだゲート電極と前記導電性シールド電極を互いから絶縁するインターポリ誘電体を前記導電性シールド電極上に形成するステップと、
前記トレンチの上方側壁に沿ったゲート誘電体層を形成するステップと、を含み、
前記ゲート誘電体層は前記窪んだゲート電極を前記半導体領域から絶縁していることを特徴とする請求項15に記載の方法。 - 前記導電性材料はドープシリコンを含んでいることを特徴とする請求項15に記載の方法。
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007317779A (ja) * | 2006-05-24 | 2007-12-06 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2012080074A (ja) * | 2010-09-08 | 2012-04-19 | Denso Corp | 半導体装置 |
JP2012204395A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2013508984A (ja) * | 2009-10-21 | 2013-03-07 | ヴィシェイ−シリコニックス | 曲線状のゲート酸化物プロファイルを有するスプリットゲート半導体素子 |
JP2014225693A (ja) * | 2014-08-04 | 2014-12-04 | 株式会社東芝 | 半導体装置およびその製造方法 |
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US9577089B2 (en) | 2010-03-02 | 2017-02-21 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
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US10234486B2 (en) | 2014-08-19 | 2019-03-19 | Vishay/Siliconix | Vertical sense devices in vertical trench MOSFET |
US11114559B2 (en) | 2011-05-18 | 2021-09-07 | Vishay-Siliconix, LLC | Semiconductor device having reduced gate charges and superior figure of merit |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
JP2022031098A (ja) * | 2020-08-07 | 2022-02-18 | セミコンダクター マニュファクチュアリング エレクトロニクス(シャオシン)コーポレーション | 半導体装置及びその形成方法 |
Families Citing this family (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
CN102738239A (zh) | 2005-05-26 | 2012-10-17 | 飞兆半导体公司 | 沟槽栅场效应晶体管及其制造方法 |
US7393749B2 (en) * | 2005-06-10 | 2008-07-01 | Fairchild Semiconductor Corporation | Charge balance field effect transistor |
TWI400757B (zh) * | 2005-06-29 | 2013-07-01 | Fairchild Semiconductor | 形成遮蔽閘極場效應電晶體之方法 |
US7635637B2 (en) * | 2005-07-25 | 2009-12-22 | Fairchild Semiconductor Corporation | Semiconductor structures formed on substrates and methods of manufacturing the same |
US7807536B2 (en) * | 2006-02-10 | 2010-10-05 | Fairchild Semiconductor Corporation | Low resistance gate for power MOSFET applications and method of manufacture |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
JP2007311574A (ja) * | 2006-05-18 | 2007-11-29 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
US7804150B2 (en) * | 2006-06-29 | 2010-09-28 | Fairchild Semiconductor Corporation | Lateral trench gate FET with direct source-drain current path |
DE102006030631B4 (de) * | 2006-07-03 | 2011-01-05 | Infineon Technologies Austria Ag | Halbleiterbauelementanordnung mit einem Leistungsbauelement und einem Logikbauelement |
DE102007020249B4 (de) * | 2007-04-30 | 2015-01-08 | Infineon Technologies Austria Ag | Halbleiterbauelement, Halbleitersensorstruktur sowie Vorrichtung und Verfahren zum Herstellen eines Halbleiterbauelement |
US20080296673A1 (en) * | 2007-05-29 | 2008-12-04 | Alpha & Omega Semiconductor, Ltd | Double gate manufactured with locos techniques |
KR100890256B1 (ko) * | 2007-05-29 | 2009-03-24 | 삼성전자주식회사 | 리세스 채널 영역을 갖는 트랜지스터를 채택하는 반도체소자 및 그 제조 방법 |
JP2009016368A (ja) * | 2007-06-29 | 2009-01-22 | Ricoh Co Ltd | メモリーデバイス |
US8497549B2 (en) * | 2007-08-21 | 2013-07-30 | Fairchild Semiconductor Corporation | Method and structure for shielded gate trench FET |
CN101868856B (zh) | 2007-09-21 | 2014-03-12 | 飞兆半导体公司 | 用于功率器件的超结结构及制造方法 |
US8101500B2 (en) * | 2007-09-27 | 2012-01-24 | Fairchild Semiconductor Corporation | Semiconductor device with (110)-oriented silicon |
US20090085107A1 (en) * | 2007-09-28 | 2009-04-02 | Force-Mos Technology Corp. | Trench MOSFET with thick bottom oxide tub |
US8207037B2 (en) * | 2007-10-31 | 2012-06-26 | Semiconductor Components Industries, Llc | Method for manufacturing a semiconductor component that includes a field plate |
US7825465B2 (en) * | 2007-12-13 | 2010-11-02 | Fairchild Semiconductor Corporation | Structure and method for forming field effect transistor with low resistance channel region |
US7932556B2 (en) * | 2007-12-14 | 2011-04-26 | Fairchild Semiconductor Corporation | Structure and method for forming power devices with high aspect ratio contact openings |
US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
US8003522B2 (en) * | 2007-12-19 | 2011-08-23 | Fairchild Semiconductor Corporation | Method for forming trenches with wide upper portion and narrow lower portion |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US7807576B2 (en) * | 2008-06-20 | 2010-10-05 | Fairchild Semiconductor Corporation | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
US7872305B2 (en) * | 2008-06-26 | 2011-01-18 | Fairchild Semiconductor Corporation | Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein |
US7936009B2 (en) * | 2008-07-09 | 2011-05-03 | Fairchild Semiconductor Corporation | Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein |
US8039877B2 (en) * | 2008-09-09 | 2011-10-18 | Fairchild Semiconductor Corporation | (110)-oriented p-channel trench MOSFET having high-K gate dielectric |
US8278702B2 (en) * | 2008-09-16 | 2012-10-02 | Fairchild Semiconductor Corporation | High density trench field effect transistor |
US7915672B2 (en) * | 2008-11-14 | 2011-03-29 | Semiconductor Components Industries, L.L.C. | Semiconductor device having trench shield electrode structure |
US7897462B2 (en) | 2008-11-14 | 2011-03-01 | Semiconductor Components Industries, L.L.C. | Method of manufacturing semiconductor component with gate and shield electrodes in trenches |
US8415739B2 (en) * | 2008-11-14 | 2013-04-09 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US8552535B2 (en) * | 2008-11-14 | 2013-10-08 | Semiconductor Components Industries, Llc | Trench shielding structure for semiconductor device and method |
US8362548B2 (en) * | 2008-11-14 | 2013-01-29 | Semiconductor Components Industries, Llc | Contact structure for semiconductor device having trench shield electrode and method |
US8378416B2 (en) * | 2008-12-01 | 2013-02-19 | Maxpower Semiconductor, Inc. | MOS-gated power devices, methods, and integrated circuits |
US8174067B2 (en) * | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8304829B2 (en) * | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
KR20100065895A (ko) * | 2008-12-09 | 2010-06-17 | 주식회사 동부하이텍 | 트렌치형 mosfet 소자의 게이트 및 게이트 형성방법 |
US8227855B2 (en) * | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
US7989293B2 (en) * | 2009-02-24 | 2011-08-02 | Maxpower Semiconductor, Inc. | Trench device structure and fabrication |
US8049276B2 (en) | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
US7952141B2 (en) * | 2009-07-24 | 2011-05-31 | Fairchild Semiconductor Corporation | Shield contacts in a shielded gate MOSFET |
TWI380448B (en) * | 2009-09-16 | 2012-12-21 | Anpec Electronics Corp | Overlapping trench gate semiconductor device and manufacturing method thereof |
US8105903B2 (en) * | 2009-09-21 | 2012-01-31 | Force Mos Technology Co., Ltd. | Method for making a trench MOSFET with shallow trench structures |
US8187939B2 (en) | 2009-09-23 | 2012-05-29 | Alpha & Omega Semiconductor Incorporated | Direct contact in trench with three-mask shield gate process |
CN102034822B (zh) * | 2009-09-25 | 2013-03-27 | 力士科技股份有限公司 | 一种具有台阶状沟槽栅和改进的源体接触性能的沟槽mosfet及其制造方法 |
US8247296B2 (en) | 2009-12-09 | 2012-08-21 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
US8021947B2 (en) * | 2009-12-09 | 2011-09-20 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
CN102103998B (zh) * | 2009-12-18 | 2012-12-12 | 上海华虹Nec电子有限公司 | 沟槽mos晶体管的结构及其制备方法 |
US8558305B2 (en) | 2009-12-28 | 2013-10-15 | Stmicroelectronics S.R.L. | Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device |
CN102130006B (zh) * | 2010-01-20 | 2013-12-18 | 上海华虹Nec电子有限公司 | 沟槽型双层栅功率mos晶体管的制备方法 |
CN102130055A (zh) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | 改善沟槽型双层栅mos器件的击穿电压的方法 |
US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
US8367501B2 (en) | 2010-03-24 | 2013-02-05 | Alpha & Omega Semiconductor, Inc. | Oxide terminated trench MOSFET with three or four masks |
US8394702B2 (en) | 2010-03-24 | 2013-03-12 | Alpha And Omega Semiconductor Incorporated | Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process |
US9252239B2 (en) * | 2014-05-31 | 2016-02-02 | Alpha And Omega Semiconductor Incorporated | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts |
US8779510B2 (en) * | 2010-06-01 | 2014-07-15 | Alpha And Omega Semiconductor Incorporated | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts |
CN102299108B (zh) * | 2010-06-22 | 2014-03-26 | 茂达电子股份有限公司 | 重叠沟槽式栅极半导体组件及其制作方法 |
TWI458022B (zh) * | 2010-07-23 | 2014-10-21 | Great Power Semiconductor Corp | 低閘極電荷的溝槽式功率半導體製造方法 |
US20120037983A1 (en) * | 2010-08-10 | 2012-02-16 | Force Mos Technology Co., Ltd. | Trench mosfet with integrated schottky rectifier in same cell |
US8435853B2 (en) * | 2010-08-30 | 2013-05-07 | Infineon Technologies Ag | Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode |
US8362550B2 (en) * | 2011-01-20 | 2013-01-29 | Fairchild Semiconductor Corporation | Trench power MOSFET with reduced on-resistance |
US8461646B2 (en) * | 2011-02-04 | 2013-06-11 | Vishay General Semiconductor Llc | Trench MOS barrier schottky (TMBS) having multiple floating gates |
US8823090B2 (en) | 2011-02-17 | 2014-09-02 | International Business Machines Corporation | Field-effect transistor and method of creating same |
JP5729331B2 (ja) * | 2011-04-12 | 2015-06-03 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
US8502302B2 (en) | 2011-05-02 | 2013-08-06 | Alpha And Omega Semiconductor Incorporated | Integrating Schottky diode into power MOSFET |
US8274113B1 (en) * | 2011-05-12 | 2012-09-25 | Force Mos Technology Co., Ltd. | Trench MOSFET having shielded electrode integrated with trench Schottky rectifier |
US8492903B2 (en) | 2011-06-29 | 2013-07-23 | International Business Machines Corporation | Through silicon via direct FET signal gating |
JP2013062344A (ja) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | 半導体装置およびその製造方法 |
US10032878B2 (en) | 2011-09-23 | 2018-07-24 | Infineon Technologies Ag | Semiconductor device with a semiconductor via and laterally connected electrode |
US9324829B2 (en) * | 2011-09-23 | 2016-04-26 | Infineon Technologies Ag | Method of forming a trench electrode device with wider and narrower regions |
CN103022155B (zh) * | 2011-09-26 | 2017-05-17 | 盛况 | 一种沟槽mos结构肖特基二极管及其制备方法 |
CN103094115B (zh) * | 2011-11-01 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 制作双层栅沟槽mos的工艺方法 |
CN103094118B (zh) * | 2011-11-01 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 制作双层栅沟槽mos的工艺方法 |
KR20130055981A (ko) * | 2011-11-21 | 2013-05-29 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
US9082746B2 (en) * | 2012-01-16 | 2015-07-14 | Infineon Technologies Austria Ag | Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component |
US8697520B2 (en) * | 2012-03-02 | 2014-04-15 | Alpha & Omega Semiconductor Incorporationed | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS |
CN103325682A (zh) * | 2012-03-20 | 2013-09-25 | 上海华虹Nec电子有限公司 | 双层多晶栅沟槽型mos晶体管的制备方法 |
JP5718265B2 (ja) * | 2012-03-27 | 2015-05-13 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
WO2013166078A1 (en) * | 2012-04-30 | 2013-11-07 | Vishay-Siliconix | Semiconductor device |
US9029215B2 (en) * | 2012-05-14 | 2015-05-12 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure |
US8642425B2 (en) | 2012-05-29 | 2014-02-04 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device and structure |
US8896060B2 (en) | 2012-06-01 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench power MOSFET |
US8969955B2 (en) | 2012-06-01 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power MOSFET and methods for forming the same |
US8648412B1 (en) * | 2012-06-04 | 2014-02-11 | Semiconductor Components Industries, Llc | Trench power field effect transistor device and method |
US8802530B2 (en) | 2012-06-06 | 2014-08-12 | Alpha And Omega Semiconductor Incorporated | MOSFET with improved performance through induced net charge region in thick bottom insulator |
TWI470790B (zh) | 2012-07-13 | 2015-01-21 | Ubiq Semiconductor Corp | 溝渠式閘極金氧半場效電晶體 |
US8829562B2 (en) * | 2012-07-24 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device including a dielectric structure in a trench |
CN103579320A (zh) * | 2012-07-31 | 2014-02-12 | 上海华虹Nec电子有限公司 | 沟槽型栅极及制造方法 |
US8951867B2 (en) | 2012-12-21 | 2015-02-10 | Alpha And Omega Semiconductor Incorporated | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
US8753935B1 (en) | 2012-12-21 | 2014-06-17 | Alpha And Omega Semiconductor Incorporated | High frequency switching MOSFETs with low output capacitance using a depletable P-shield |
US8809948B1 (en) * | 2012-12-21 | 2014-08-19 | Alpha And Omega Semiconductor Incorporated | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
JP6062269B2 (ja) * | 2013-01-31 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9105494B2 (en) | 2013-02-25 | 2015-08-11 | Alpha and Omega Semiconductors, Incorporated | Termination trench for power MOSFET applications |
US9202906B2 (en) | 2013-03-14 | 2015-12-01 | Northrop Grumman Systems Corporation | Superlattice crenelated gate field effect transistor |
CN104051524B (zh) * | 2013-03-15 | 2017-12-05 | 英飞凌科技奥地利有限公司 | 半导体器件 |
JP5799046B2 (ja) | 2013-03-22 | 2015-10-21 | 株式会社東芝 | 半導体装置 |
DE102014104108B4 (de) * | 2013-03-25 | 2017-07-27 | Infineon Technologies Ag | Verfahren zur herstellung einer grabenelektrodenanordnung |
KR20150030799A (ko) | 2013-09-12 | 2015-03-23 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 제조 방법 |
KR102156130B1 (ko) * | 2014-04-10 | 2020-09-15 | 삼성전자주식회사 | 반도체 소자 형성 방법 |
US9318598B2 (en) * | 2014-05-30 | 2016-04-19 | Texas Instruments Incorporated | Trench MOSFET having reduced gate charge |
US9397213B2 (en) | 2014-08-29 | 2016-07-19 | Freescale Semiconductor, Inc. | Trench gate FET with self-aligned source contact |
US9553184B2 (en) * | 2014-08-29 | 2017-01-24 | Nxp Usa, Inc. | Edge termination for trench gate FET |
US9171949B1 (en) * | 2014-09-24 | 2015-10-27 | Alpha And Omega Semiconductor Incorporated | Semiconductor device including superjunction structure formed using angled implant process |
US9368621B1 (en) * | 2014-11-26 | 2016-06-14 | Sinopower Semiconductor, Inc. | Power semiconductor device having low on-state resistance |
CN104638011B (zh) * | 2015-01-23 | 2018-05-11 | 无锡同方微电子有限公司 | 一种沟槽mosfet器件及其制作方法 |
US9680003B2 (en) | 2015-03-27 | 2017-06-13 | Nxp Usa, Inc. | Trench MOSFET shield poly contact |
CN104900704A (zh) * | 2015-05-15 | 2015-09-09 | 四川广义微电子股份有限公司 | 一种纵向dmos器件 |
DE102015118616B3 (de) | 2015-10-30 | 2017-04-13 | Infineon Technologies Austria Ag | Latchup-fester Transistor |
CN105742185B (zh) * | 2016-02-23 | 2019-06-11 | 深圳尚阳通科技有限公司 | 屏蔽栅功率器件及其制造方法 |
JP2017162969A (ja) | 2016-03-09 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
US10854759B2 (en) * | 2016-04-01 | 2020-12-01 | Diodes Incorporated | Trenched MOS gate controlled rectifier |
CN105895516B (zh) * | 2016-04-29 | 2018-08-31 | 深圳尚阳通科技有限公司 | 具有屏蔽栅的沟槽栅mosfet的制造方法 |
TWI615889B (zh) * | 2016-05-18 | 2018-02-21 | 杰力科技股份有限公司 | 功率金氧半導體場效電晶體的製造方法 |
CN106057674B (zh) * | 2016-05-31 | 2019-04-09 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅沟槽mosfet的制造方法 |
CN107785426B (zh) * | 2016-08-31 | 2020-01-31 | 无锡华润上华科技有限公司 | 一种半导体器件及其制造方法 |
US9741825B1 (en) * | 2016-12-08 | 2017-08-22 | Taiwan Semiconductor Co., Ltd. | Method for manufacturing field effect transistor having widened trench |
KR102335489B1 (ko) * | 2016-12-13 | 2021-12-03 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
TWI663725B (zh) * | 2017-04-26 | 2019-06-21 | 國立清華大學 | 溝槽式閘極功率金氧半場效電晶體之結構 |
CN109216449B (zh) * | 2017-06-30 | 2021-07-30 | 帅群微电子股份有限公司 | 沟槽式功率半导体元件及其制造方法 |
US20190081147A1 (en) * | 2017-09-13 | 2019-03-14 | Polar Semiconductor, Llc | Mosfet with vertical variation of gate-pillar separation |
US10522677B2 (en) | 2017-09-26 | 2019-12-31 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
US10424646B2 (en) | 2017-09-26 | 2019-09-24 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
US10600911B2 (en) | 2017-09-26 | 2020-03-24 | Nxp Usa, Inc. | Field-effect transistor and method therefor |
US11081554B2 (en) * | 2017-10-12 | 2021-08-03 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having trench termination structure and method |
US10332992B1 (en) * | 2018-01-22 | 2019-06-25 | Sanken Electric Co., Ltd. | Semiconductor device having improved trench, source and gate electrode structures |
US10522620B2 (en) | 2018-02-02 | 2019-12-31 | Kabushiki Kaisha Toshiba | Semiconductor device having a varying length conductive portion between semiconductor regions |
US10600879B2 (en) | 2018-03-12 | 2020-03-24 | Nxp Usa, Inc. | Transistor trench structure with field plate structures |
TWI750375B (zh) * | 2018-05-16 | 2021-12-21 | 力智電子股份有限公司 | 溝槽閘極金氧半場效電晶體及其製造方法 |
JP7250473B2 (ja) * | 2018-10-18 | 2023-04-03 | 三菱電機株式会社 | 半導体装置 |
US10833174B2 (en) | 2018-10-26 | 2020-11-10 | Nxp Usa, Inc. | Transistor devices with extended drain regions located in trench sidewalls |
US10749023B2 (en) | 2018-10-30 | 2020-08-18 | Nxp Usa, Inc. | Vertical transistor with extended drain region |
US10749028B2 (en) | 2018-11-30 | 2020-08-18 | Nxp Usa, Inc. | Transistor with gate/field plate structure |
EP3690952A1 (en) * | 2019-01-29 | 2020-08-05 | Nexperia B.V. | Trench gate semiconductor device and method of manufacture |
WO2020180338A1 (en) * | 2019-03-01 | 2020-09-10 | Ipower Semiconductor | Method of manufacturing shielded gate trench mosfet devices |
TWI704606B (zh) * | 2019-04-24 | 2020-09-11 | 帥群微電子股份有限公司 | 溝槽式功率半導體元件及其製造方法 |
US10892320B2 (en) * | 2019-04-30 | 2021-01-12 | Vanguard International Semiconductor Corporation | Semiconductor devices having stacked trench gate electrodes overlapping a well region |
US10930774B2 (en) * | 2019-07-16 | 2021-02-23 | Nami MOS CO., LTD. | Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination |
US11387348B2 (en) | 2019-11-22 | 2022-07-12 | Nxp Usa, Inc. | Transistor formed with spacer |
US11329156B2 (en) | 2019-12-16 | 2022-05-10 | Nxp Usa, Inc. | Transistor with extended drain region |
JP7249269B2 (ja) * | 2019-12-27 | 2023-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
US11217675B2 (en) | 2020-03-31 | 2022-01-04 | Nxp Usa, Inc. | Trench with different transverse cross-sectional widths |
US11075110B1 (en) | 2020-03-31 | 2021-07-27 | Nxp Usa, Inc. | Transistor trench with field plate structure |
CN111627820B (zh) * | 2020-06-05 | 2022-07-15 | 绍兴中芯集成电路制造股份有限公司 | 屏蔽栅场效应晶体管及其制备方法 |
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CN113782446A (zh) * | 2021-09-30 | 2021-12-10 | 深圳市芯电元科技有限公司 | 一种屏蔽栅mosfet的制造方法 |
CN114420564A (zh) * | 2022-03-28 | 2022-04-29 | 深圳市美浦森半导体有限公司 | 一种分离栅沟槽mos器件及其制造方法 |
CN116053139A (zh) * | 2023-01-09 | 2023-05-02 | 深圳吉华微特电子有限公司 | 一种沟槽型双栅结构半导体器件制造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250732A (ja) * | 1994-12-30 | 1996-09-27 | Siliconix Inc | デルタ層を有する低オン抵抗のトレンチ型mosfet及びその製造方法 |
JP2001085685A (ja) * | 1999-09-13 | 2001-03-30 | Shindengen Electric Mfg Co Ltd | トランジスタ |
JP2001111050A (ja) * | 1999-10-13 | 2001-04-20 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置 |
JP2001230414A (ja) * | 2000-02-16 | 2001-08-24 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置およびその製造方法 |
JP2002110984A (ja) * | 2000-06-08 | 2002-04-12 | Siliconix Inc | 高周波mosfet及びその製造方法 |
JP2005116649A (ja) * | 2003-10-06 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 縦型ゲート半導体装置およびその製造方法 |
JP2005528796A (ja) * | 2002-05-31 | 2005-09-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチ・ゲート半導体装置と製造方法 |
JP2007535822A (ja) * | 2004-04-30 | 2007-12-06 | シリコニックス インコーポレーテッド | 埋込みソース電極を含むスーパートレンチmosfetおよびそれを製造する方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941026A (en) | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
US4893160A (en) | 1987-11-13 | 1990-01-09 | Siliconix Incorporated | Method for increasing the performance of trenched devices and the resulting structure |
US5283201A (en) | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
US5821583A (en) | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
JP2000515684A (ja) | 1996-07-19 | 2000-11-21 | シリコニックス・インコーポレイテッド | トレンチ底部注入領域を有する高密度トレンチdmosトランジスタ |
US5907776A (en) | 1997-07-11 | 1999-05-25 | Magepower Semiconductor Corp. | Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance |
US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6376315B1 (en) | 2000-03-31 | 2002-04-23 | General Semiconductor, Inc. | Method of forming a trench DMOS having reduced threshold voltage |
JP4528460B2 (ja) | 2000-06-30 | 2010-08-18 | 株式会社東芝 | 半導体素子 |
US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6870220B2 (en) | 2002-08-23 | 2005-03-22 | Fairchild Semiconductor Corporation | Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses |
TW543146B (en) | 2001-03-09 | 2003-07-21 | Fairchild Semiconductor | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
US6657254B2 (en) | 2001-11-21 | 2003-12-02 | General Semiconductor, Inc. | Trench MOSFET device with improved on-resistance |
TWI248136B (en) * | 2002-03-19 | 2006-01-21 | Infineon Technologies Ag | Method for fabricating a transistor arrangement having trench transistor cells having a field electrode |
US7122860B2 (en) | 2002-05-31 | 2006-10-17 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor devices |
US6918689B2 (en) | 2003-07-17 | 2005-07-19 | Deere & Company | Pivoting auxiliary vehicle light assembly |
EP1708276A4 (en) * | 2003-12-22 | 2008-04-16 | Matsushita Electric Ind Co Ltd | VERTICAL GATE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR |
JP2005302925A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 半導体装置 |
JP4491638B2 (ja) * | 2004-05-20 | 2010-06-30 | 日本電気株式会社 | バックライト用他励式インバータ回路および駆動方法 |
US7080591B2 (en) | 2004-09-14 | 2006-07-25 | Hamilton Sundstrand | Non-symmetrical seal plate and valve housing |
CN102738239A (zh) | 2005-05-26 | 2012-10-17 | 飞兆半导体公司 | 沟槽栅场效应晶体管及其制造方法 |
-
2006
- 2006-05-24 CN CN2012101580753A patent/CN102738239A/zh active Pending
- 2006-05-24 AT AT0921406A patent/AT504289A2/de not_active Application Discontinuation
- 2006-05-24 KR KR1020077029511A patent/KR101254835B1/ko active IP Right Grant
- 2006-05-24 DE DE112006001318T patent/DE112006001318T5/de not_active Withdrawn
- 2006-05-24 WO PCT/US2006/020274 patent/WO2006127914A2/en active Application Filing
- 2006-05-24 US US11/441,386 patent/US7504303B2/en not_active Expired - Fee Related
- 2006-05-24 JP JP2008513715A patent/JP2008546189A/ja active Pending
- 2006-05-24 CN CN2006800184437A patent/CN101542731B/zh not_active Expired - Fee Related
- 2006-05-25 TW TW095118598A patent/TWI395294B/zh active
-
2009
- 2009-03-16 US US12/404,909 patent/US20090230465A1/en not_active Abandoned
-
2010
- 2010-02-02 US US12/698,746 patent/US7923776B2/en active Active
-
2011
- 2011-03-29 US US13/075,091 patent/US8043913B2/en active Active
- 2011-10-21 US US13/279,085 patent/US8441069B2/en active Active
-
2013
- 2013-05-10 US US13/891,794 patent/US8884365B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250732A (ja) * | 1994-12-30 | 1996-09-27 | Siliconix Inc | デルタ層を有する低オン抵抗のトレンチ型mosfet及びその製造方法 |
JP2001085685A (ja) * | 1999-09-13 | 2001-03-30 | Shindengen Electric Mfg Co Ltd | トランジスタ |
JP2001111050A (ja) * | 1999-10-13 | 2001-04-20 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置 |
JP2001230414A (ja) * | 2000-02-16 | 2001-08-24 | Toyota Central Res & Dev Lab Inc | 縦型半導体装置およびその製造方法 |
JP2002110984A (ja) * | 2000-06-08 | 2002-04-12 | Siliconix Inc | 高周波mosfet及びその製造方法 |
JP2005528796A (ja) * | 2002-05-31 | 2005-09-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチ・ゲート半導体装置と製造方法 |
JP2005116649A (ja) * | 2003-10-06 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 縦型ゲート半導体装置およびその製造方法 |
JP2007535822A (ja) * | 2004-04-30 | 2007-12-06 | シリコニックス インコーポレーテッド | 埋込みソース電極を含むスーパートレンチmosfetおよびそれを製造する方法 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4735414B2 (ja) * | 2006-05-24 | 2011-07-27 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
JP2007317779A (ja) * | 2006-05-24 | 2007-12-06 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US9893168B2 (en) | 2009-10-21 | 2018-02-13 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
JP2013508984A (ja) * | 2009-10-21 | 2013-03-07 | ヴィシェイ−シリコニックス | 曲線状のゲート酸化物プロファイルを有するスプリットゲート半導体素子 |
US10453953B2 (en) | 2010-03-02 | 2019-10-22 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
US9577089B2 (en) | 2010-03-02 | 2017-02-21 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
JP2012080074A (ja) * | 2010-09-08 | 2012-04-19 | Denso Corp | 半導体装置 |
JP2012204395A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US11114559B2 (en) | 2011-05-18 | 2021-09-07 | Vishay-Siliconix, LLC | Semiconductor device having reduced gate charges and superior figure of merit |
JP2016537809A (ja) * | 2013-10-21 | 2016-12-01 | ヴィシェイ−シリコニックス | 高エネルギードーパント注入技術を用いた半導体構造 |
JP2016004847A (ja) * | 2014-06-14 | 2016-01-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2014225693A (ja) * | 2014-08-04 | 2014-12-04 | 株式会社東芝 | 半導体装置およびその製造方法 |
US10234486B2 (en) | 2014-08-19 | 2019-03-19 | Vishay/Siliconix | Vertical sense devices in vertical trench MOSFET |
US10444262B2 (en) | 2014-08-19 | 2019-10-15 | Vishay-Siliconix | Vertical sense devices in vertical trench MOSFET |
US10527654B2 (en) | 2014-08-19 | 2020-01-07 | Vishay SIliconix, LLC | Vertical sense devices in vertical trench MOSFET |
JP2018129378A (ja) * | 2017-02-07 | 2018-08-16 | ローム株式会社 | 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物 |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
JP2022031098A (ja) * | 2020-08-07 | 2022-02-18 | セミコンダクター マニュファクチュアリング エレクトロニクス(シャオシン)コーポレーション | 半導体装置及びその形成方法 |
JP7127168B2 (ja) | 2020-08-07 | 2022-08-29 | セミコンダクター マニュファクチュアリング エレクトロニクス(シャオシン)コーポレーション | 半導体装置及びその形成方法 |
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US8884365B2 (en) | 2014-11-11 |
WO2006127914A3 (en) | 2009-05-22 |
US20100258862A1 (en) | 2010-10-14 |
CN102738239A (zh) | 2012-10-17 |
WO2006127914A2 (en) | 2006-11-30 |
US20060273386A1 (en) | 2006-12-07 |
US20110177662A1 (en) | 2011-07-21 |
TWI395294B (zh) | 2013-05-01 |
US8043913B2 (en) | 2011-10-25 |
DE112006001318T5 (de) | 2008-04-17 |
KR20080015863A (ko) | 2008-02-20 |
US7923776B2 (en) | 2011-04-12 |
US20090230465A1 (en) | 2009-09-17 |
TW200703561A (en) | 2007-01-16 |
KR101254835B1 (ko) | 2013-04-15 |
CN101542731A (zh) | 2009-09-23 |
AT504289A2 (de) | 2008-04-15 |
US20130248991A1 (en) | 2013-09-26 |
US8441069B2 (en) | 2013-05-14 |
US7504303B2 (en) | 2009-03-17 |
US20120104490A1 (en) | 2012-05-03 |
CN101542731B (zh) | 2012-07-11 |
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