|
US656670A
(en)
*
|
1899-08-25 |
1900-08-28 |
Farbenfabriken Of Elberfeld Company |
Blue anthrarufin dye and process of making same.
|
|
SU560683A1
(ru)
*
|
1975-12-23 |
1977-06-05 |
Ордена Трудового Красного Знамени Научно-Исследовательский Институт Технологии Автомобильной Промышленности |
Устройство дл выталкивани поковок
|
|
US4270049A
(en)
|
1978-06-12 |
1981-05-26 |
Ishikawajima-Harima Jukogyo Kabushiki Kaisha |
Liquid leakage detection system
|
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
|
JPS57117238A
(en)
|
1981-01-14 |
1982-07-21 |
Nippon Kogaku Kk <Nikon> |
Exposing and baking device for manufacturing integrated circuit with illuminometer
|
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
|
JPS5919912A
(ja)
*
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
|
DD221563A1
(de)
*
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
|
US4672271A
(en)
*
|
1985-04-15 |
1987-06-09 |
Omniprise, Inc. |
Apparatus and method for automatic operation of a high pressure mercury arc lamp
|
|
JPS6265326A
(ja)
*
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
|
JPH01276043A
(ja)
|
1988-04-28 |
1989-11-06 |
Mitsubishi Cable Ind Ltd |
導波路型液体検知器
|
|
JPH0336940U
(enExample)
|
1989-08-22 |
1991-04-10 |
|
|
|
JP2885845B2
(ja)
*
|
1989-10-02 |
1999-04-26 |
キヤノン株式会社 |
Ｘ線露光装置
|
|
JPH0449614A
(ja)
*
|
1990-06-19 |
1992-02-19 |
Canon Inc |
Ｘ線露光装置
|
|
EP0422814B1
(en)
|
1989-10-02 |
1999-03-17 |
Canon Kabushiki Kaisha |
Exposure apparatus
|
|
JP2897355B2
(ja)
|
1990-07-05 |
1999-05-31 |
株式会社ニコン |
アライメント方法，露光装置，並びに位置検出方法及び装置
|
|
JP2830492B2
(ja)
|
1991-03-06 |
1998-12-02 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
|
JPH04305915A
(ja)
*
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
|
JPH0590351U
(ja)
|
1991-05-20 |
1993-12-10 |
株式会社ツーデン |
漏液センサ
|
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるｌｓｉ製造縮小投影露光装置の光学系
|
|
JPH05173639A
(ja)
*
|
1991-12-20 |
1993-07-13 |
Fujitsu Ltd |
位置制御装置及びその制御方法
|
|
JP3246615B2
(ja)
|
1992-07-27 |
2002-01-15 |
株式会社ニコン |
照明光学装置、露光装置、及び露光方法
|
|
JPH06188169A
(ja)
|
1992-08-24 |
1994-07-08 |
Canon Inc |
結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
|
|
US5559582A
(en)
*
|
1992-08-28 |
1996-09-24 |
Nikon Corporation |
Exposure apparatus
|
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
|
JP3412704B2
(ja)
|
1993-02-26 |
2003-06-03 |
株式会社ニコン |
投影露光方法及び装置、並びに露光装置
|
|
JPH06288915A
(ja)
*
|
1993-03-30 |
1994-10-18 |
Dainippon Screen Mfg Co Ltd |
処理液検出装置
|
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
|
US6989647B1
(en)
|
1994-04-01 |
2006-01-24 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
|
US7365513B1
(en)
|
1994-04-01 |
2008-04-29 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
|
JP3555230B2
(ja)
|
1994-05-18 |
2004-08-18 |
株式会社ニコン |
投影露光装置
|
|
JPH0886612A
(ja)
*
|
1994-09-19 |
1996-04-02 |
Canon Inc |
光ヘテロダイン干渉を利用した位置ずれ検出装置
|
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
|
US6008500A
(en)
|
1995-04-04 |
1999-12-28 |
Nikon Corporation |
Exposure apparatus having dynamically isolated reaction frame
|
|
JPH08316125A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
|
JP3137174B2
(ja)
|
1995-09-08 |
2001-02-19 |
横河電機株式会社 |
Ｉｃテスタのテストヘッド
|
|
KR100228036B1
(ko)
|
1996-02-09 |
1999-11-01 |
니시무로 타이죠 |
표면에너지 분포측정장치 및 측정방법
|
|
US5885134A
(en)
|
1996-04-18 |
1999-03-23 |
Ebara Corporation |
Polishing apparatus
|
|
US5825043A
(en)
*
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
|
AU5067898A
(en)
|
1996-11-28 |
1998-06-22 |
Nikon Corporation |
Aligner and method for exposure
|
|
JP4029183B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
|
JP4029182B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
露光方法
|
|
WO1998028665A1
(en)
|
1996-12-24 |
1998-07-02 |
Koninklijke Philips Electronics N.V. |
Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
|
|
US5815246A
(en)
|
1996-12-24 |
1998-09-29 |
U.S. Philips Corporation |
Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
|
|
USRE40043E1
(en)
|
1997-03-10 |
2008-02-05 |
Asml Netherlands B.V. |
Positioning device having two object holders
|
|
US6268904B1
(en)
|
1997-04-23 |
2001-07-31 |
Nikon Corporation |
Optical exposure apparatus and photo-cleaning method
|
|
JPH10335235A
(ja)
|
1997-05-28 |
1998-12-18 |
Nikon Corp |
露光装置、その光洗浄方法及び半導体デバイスの製造方法
|
|
EP0874283B1
(en)
|
1997-04-23 |
2003-09-03 |
Nikon Corporation |
Optical exposure apparatus and photo-cleaning method
|
|
JPH10335236A
(ja)
|
1997-05-28 |
1998-12-18 |
Nikon Corp |
露光装置、その光洗浄方法及び半導体デバイスの製造方法
|
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
|
JP3377165B2
(ja)
*
|
1997-05-19 |
2003-02-17 |
キヤノン株式会社 |
半導体露光装置
|
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
|
JPH1116816A
(ja)
|
1997-06-25 |
1999-01-22 |
Nikon Corp |
投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
|
|
JPH1131647A
(ja)
*
|
1997-07-11 |
1999-02-02 |
Oki Electric Ind Co Ltd |
投影露光装置
|
|
JP4210871B2
(ja)
|
1997-10-31 |
2009-01-21 |
株式会社ニコン |
露光装置
|
|
JP4208277B2
(ja)
*
|
1997-11-26 |
2009-01-14 |
キヤノン株式会社 |
露光方法及び露光装置
|
|
US6020964A
(en)
|
1997-12-02 |
2000-02-01 |
Asm Lithography B.V. |
Interferometer system and lithograph apparatus including an interferometer system
|
|
JPH11176727A
(ja)
*
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
|
US6897963B1
(en)
|
1997-12-18 |
2005-05-24 |
Nikon Corporation |
Stage device and exposure apparatus
|
|
US6208407B1
(en)
|
1997-12-22 |
2001-03-27 |
Asm Lithography B.V. |
Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
|
|
JPH11204390A
(ja)
*
|
1998-01-14 |
1999-07-30 |
Canon Inc |
半導体製造装置およびデバイス製造方法
|
|
JPH11264756A
(ja)
*
|
1998-03-18 |
1999-09-28 |
Tokyo Electron Ltd |
液面検出器および液面検出方法、ならびに基板処理装置
|
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
|
JP2000058436A
(ja)
*
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
|
KR20010089453A
(ko)
*
|
1998-11-18 |
2001-10-06 |
시마무라 테루오 |
노광방법 및 장치
|
|
EP1018669B1
(en)
|
1999-01-08 |
2006-03-01 |
ASML Netherlands B.V. |
Projection lithography with servo control
|
|
US6566770B1
(en)
*
|
1999-06-15 |
2003-05-20 |
Canon Kabushiki Kaisha |
Semiconductor manufacturing apparatus and device manufacturing method
|
|
WO2001022480A1
(en)
|
1999-09-20 |
2001-03-29 |
Nikon Corporation |
Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
|
|
WO2001035168A1
(en)
|
1999-11-10 |
2001-05-17 |
Massachusetts Institute Of Technology |
Interference lithography utilizing phase-locked scanning beams
|
|
EP1107067B1
(en)
*
|
1999-12-01 |
2006-12-27 |
ASML Netherlands B.V. |
Positioning apparatus and lithographic apparatus comprising the same
|
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
|
JP2001203145A
(ja)
*
|
2000-01-20 |
2001-07-27 |
Nikon Corp |
露光装置
|
|
TW588222B
(en)
|
2000-02-10 |
2004-05-21 |
Asml Netherlands Bv |
Cooling of voice coil motors in lithographic projection apparatus
|
|
JP2001308003A
(ja)
*
|
2000-02-15 |
2001-11-02 |
Nikon Corp |
露光方法及び装置、並びにデバイス製造方法
|
|
US6472643B1
(en)
|
2000-03-07 |
2002-10-29 |
Silicon Valley Group, Inc. |
Substrate thermal management system
|
|
US20020041377A1
(en)
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
|
JP2002014005A
(ja)
|
2000-04-25 |
2002-01-18 |
Nikon Corp |
空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
|
|
JP2001345245A
(ja)
|
2000-05-31 |
2001-12-14 |
Nikon Corp |
露光方法及び露光装置並びにデバイス製造方法
|
|
JP2002015978A
(ja)
|
2000-06-29 |
2002-01-18 |
Canon Inc |
露光装置
|
|
JP3469537B2
(ja)
|
2000-07-21 |
2003-11-25 |
サンクス株式会社 |
漏液センサ
|
|
TW591653B
(en)
*
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
|
US6852988B2
(en)
*
|
2000-11-28 |
2005-02-08 |
Sumitomo Heavy Industries, Ltd. |
Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects
|
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
|
JP2002305140A
(ja)
*
|
2001-04-06 |
2002-10-18 |
Nikon Corp |
露光装置及び基板処理システム
|
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
|
JP2002365809A
(ja)
*
|
2001-06-12 |
2002-12-18 |
Nsk Ltd |
分割逐次露光装置
|
|
TW569288B
(en)
*
|
2001-06-19 |
2004-01-01 |
Tokyo Electron Ltd |
Substrate processing apparatus, liquid processing apparatus and liquid processing method
|
|
KR20030002514A
(ko)
|
2001-06-29 |
2003-01-09 |
삼성전자 주식회사 |
웨이퍼가 장착될 척을 냉각시키기 위한 냉매 경로에서의냉매 누설을 감지할 수 있는 냉각 시스템
|
|
TWI226077B
(en)
*
|
2001-07-05 |
2005-01-01 |
Tokyo Electron Ltd |
Liquid processing apparatus and liquid processing method
|
|
JP2003022958A
(ja)
*
|
2001-07-09 |
2003-01-24 |
Canon Inc |
露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
|
|
TW529172B
(en)
|
2001-07-24 |
2003-04-21 |
Asml Netherlands Bv |
Imaging apparatus
|
|
JP2003037051A
(ja)
*
|
2001-07-25 |
2003-02-07 |
Canon Inc |
露光装置及びその制御方法、並びに半導体デバイスの製造方法
|
|
JP3869306B2
(ja)
*
|
2001-08-28 |
2007-01-17 |
東京エレクトロン株式会社 |
現像処理方法および現像液塗布装置
|
|
JP2003142366A
(ja)
*
|
2001-10-31 |
2003-05-16 |
Canon Inc |
投影露光装置および該装置に用いるガス状態監視方法
|
|
JP3880480B2
(ja)
*
|
2001-12-06 |
2007-02-14 |
東京エレクトロン株式会社 |
液処理装置
|
|
TWI236944B
(en)
|
2001-12-17 |
2005-08-01 |
Tokyo Electron Ltd |
Film removal method and apparatus, and substrate processing system
|
|
JP3990148B2
(ja)
*
|
2001-12-17 |
2007-10-10 |
東京エレクトロン株式会社 |
処理システム
|
|
US7154676B2
(en)
|
2002-03-01 |
2006-12-26 |
Carl Zeiss Smt A.G. |
Very-high aperture projection objective
|
|
DE10229249A1
(de)
|
2002-03-01 |
2003-09-04 |
Zeiss Carl Semiconductor Mfg |
Refraktives Projektionsobjektiv mit einer Taille
|
|
US7190527B2
(en)
|
2002-03-01 |
2007-03-13 |
Carl Zeiss Smt Ag |
Refractive projection objective
|
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
|
KR20040104691A
(ko)
|
2002-05-03 |
2004-12-10 |
칼 짜이스 에스엠테 아게 |
높은 개구를 갖는 투영 대물렌즈
|
|
JP2004072076A
(ja)
*
|
2002-06-10 |
2004-03-04 |
Nikon Corp |
露光装置及びステージ装置、並びにデバイス製造方法
|
|
TWI307526B
(en)
|
2002-08-06 |
2009-03-11 |
Nikon Corp |
Supporting device and the mamufacturing method thereof, stage device and exposure device
|
|
JP2005536775A
(ja)
|
2002-08-23 |
2005-12-02 |
株式会社ニコン |
投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
|
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
TWI232357B
(en)
|
2002-11-12 |
2005-05-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
CN101713932B
(zh)
|
2002-11-12 |
2012-09-26 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
|
EP2495613B1
(en)
|
2002-11-12 |
2013-07-31 |
ASML Netherlands B.V. |
Lithographic apparatus
|
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
CN101382738B
(zh)
|
2002-11-12 |
2011-01-12 |
Asml荷兰有限公司 |
光刻投射装置
|
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
|
AU2003302831A1
(en)
*
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
|
SG165169A1
(en)
*
|
2002-12-10 |
2010-10-28 |
Nikon Corp |
Liquid immersion exposure apparatus
|
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
|
US6992750B2
(en)
|
2002-12-10 |
2006-01-31 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
KR20120127755A
(ko)
|
2002-12-10 |
2012-11-23 |
가부시키가이샤 니콘 |
노광장치 및 디바이스 제조방법
|
|
WO2004055803A1
(en)
|
2002-12-13 |
2004-07-01 |
Koninklijke Philips Electronics N.V. |
Liquid removal in a method and device for irradiating spots on a layer
|
|
ES2268450T3
(es)
|
2002-12-19 |
2007-03-16 |
Koninklijke Philips Electronics N.V. |
Metodo y dispositivo para irradiar puntos en una capa.
|
|
DE60314668T2
(de)
|
2002-12-19 |
2008-03-06 |
Koninklijke Philips Electronics N.V. |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
|
TWI247339B
(en)
|
2003-02-21 |
2006-01-11 |
Asml Holding Nv |
Lithographic printing with polarized light
|
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
|
WO2004093159A2
(en)
|
2003-04-09 |
2004-10-28 |
Nikon Corporation |
Immersion lithography fluid control system
|
|
CN103383527B
(zh)
|
2003-04-10 |
2015-10-28 |
株式会社尼康 |
包括用于沉浸光刻装置的真空清除的环境系统
|
|
EP1611482B1
(en)
|
2003-04-10 |
2015-06-03 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
|
WO2004092833A2
(en)
|
2003-04-10 |
2004-10-28 |
Nikon Corporation |
Environmental system including a transport region for an immersion lithography apparatus
|
|
WO2004090633A2
(en)
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
|
KR20190007532A
(ko)
|
2003-04-11 |
2019-01-22 |
가부시키가이샤 니콘 |
액침 리소그래피에 의한 광학기기의 세정방법
|
|
EP2613195B1
(en)
*
|
2003-04-11 |
2015-12-16 |
Nikon Corporation |
Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
|
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
|
JP2006523958A
(ja)
|
2003-04-17 |
2006-10-19 |
株式会社ニコン |
液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
|
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
TWI616932B
(zh)
|
2003-05-23 |
2018-03-01 |
Nikon Corp |
Exposure device and component manufacturing method
|
|
CN1307456C
(zh)
|
2003-05-23 |
2007-03-28 |
佳能株式会社 |
投影光学系统、曝光装置及器件的制造方法
|
|
TWI347741B
(en)
|
2003-05-30 |
2011-08-21 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1489461A1
(en)
|
2003-06-11 |
2004-12-22 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7317504B2
(en)
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP2261742A3
(en)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Lithographic apparatus and device manufacturing method.
|
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
|
EP1491956B1
(en)
|
2003-06-27 |
2006-09-06 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
|
JP3862678B2
(ja)
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
EP1498778A1
(en)
*
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005006026A2
(en)
|
2003-07-01 |
2005-01-20 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
|
US7128024B2
(en)
*
|
2003-07-15 |
2006-10-31 |
Doyle Ii John Conan |
System and method for measuring animals
|
|
US7738074B2
(en)
*
|
2003-07-16 |
2010-06-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
|
EP1500982A1
(en)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
JP4492239B2
(ja)
|
2003-07-28 |
2010-06-30 |
株式会社ニコン |
露光装置及びデバイス製造方法、並びに露光装置の制御方法
|
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
|
JP4492600B2
(ja)
|
2003-07-28 |
2010-06-30 |
株式会社ニコン |
露光装置及び露光方法、並びにデバイス製造方法
|
|
CN102323724B
(zh)
*
|
2003-07-28 |
2014-08-13 |
株式会社尼康 |
液浸曝光装置及其制造方法、曝光装置、器件制造方法
|
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
|
US7779781B2
(en)
*
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
|
KR101748923B1
(ko)
|
2003-09-03 |
2017-06-19 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
|
JP4378136B2
(ja)
*
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
|
JP2005136374A
(ja)
*
|
2003-10-06 |
2005-05-26 |
Matsushita Electric Ind Co Ltd |
半導体製造装置及びそれを用いたパターン形成方法
|
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
|
JP2005159322A
(ja)
|
2003-10-31 |
2005-06-16 |
Nikon Corp |
定盤、ステージ装置及び露光装置並びに露光方法
|
|
TWI361450B
(en)
|
2003-10-31 |
2012-04-01 |
Nikon Corp |
Platen, stage device, exposure device and exposure method
|
|
EP1685446A2
(en)
|
2003-11-05 |
2006-08-02 |
DSM IP Assets B.V. |
A method and apparatus for producing microchips
|
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP4747263B2
(ja)
|
2003-11-24 |
2011-08-17 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
オブジェクティブにおける光学素子のための保持装置
|
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
|
JP2005175016A
(ja)
*
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
|
KR101200654B1
(ko)
|
2003-12-15 |
2012-11-12 |
칼 짜이스 에스엠티 게엠베하 |
고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
|
|
US7385764B2
(en)
|
2003-12-15 |
2008-06-10 |
Carl Zeiss Smt Ag |
Objectives as a microlithography projection objective with at least one liquid lens
|
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
WO2005059645A2
(en)
|
2003-12-19 |
2005-06-30 |
Carl Zeiss Smt Ag |
Microlithography projection objective with crystal elements
|
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
|
KR101179350B1
(ko)
|
2004-01-14 |
2012-09-11 |
칼 짜이스 에스엠티 게엠베하 |
반사굴절식 투영 대물렌즈
|
|
CN1910522B
(zh)
|
2004-01-16 |
2010-05-26 |
卡尔蔡司Smt股份公司 |
偏振调制光学元件
|
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
|
JP4843503B2
(ja)
|
2004-01-20 |
2011-12-21 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
|
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
|
KR20070039869A
(ko)
|
2004-02-03 |
2007-04-13 |
브루스 더블유. 스미스 |
용액을 사용한 포토리소그래피 방법 및 관련 시스템
|
|
KR101377815B1
(ko)
*
|
2004-02-03 |
2014-03-26 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005076084A1
(en)
|
2004-02-09 |
2005-08-18 |
Carl Zeiss Smt Ag |
Projection objective for a microlithographic projection exposure apparatus
|
|
EP1714192A1
(en)
|
2004-02-13 |
2006-10-25 |
Carl Zeiss SMT AG |
Projection objective for a microlithographic projection exposure apparatus
|
|
WO2005081030A1
(en)
|
2004-02-18 |
2005-09-01 |
Corning Incorporated |
Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
|
|
WO2005081292A1
(ja)
*
|
2004-02-20 |
2005-09-01 |
Nikon Corporation |
露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
|
|
JP2005259789A
(ja)
|
2004-03-09 |
2005-09-22 |
Nikon Corp |
検知システム及び露光装置、デバイス製造方法
|
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
|
JP2005268700A
(ja)
|
2004-03-22 |
2005-09-29 |
Nikon Corp |
ステージ装置及び露光装置
|
|
US7027125B2
(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
|
US7084960B2
(en)
|
2004-03-29 |
2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
|
US7227619B2
(en)
*
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005098504A1
(en)
|
2004-04-08 |
2005-10-20 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
|
US20050243392A1
(en)
*
|
2004-04-30 |
2005-11-03 |
Fujifilm Electronic Imaging Ltd. |
Method of controlling the motion of a spinner in an imaging device
|
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20060244938A1
(en)
|
2004-05-04 |
2006-11-02 |
Karl-Heinz Schuster |
Microlitographic projection exposure apparatus and immersion liquid therefore
|
|
US8054448B2
(en)
|
2004-05-04 |
2011-11-08 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
|
KR101376931B1
(ko)
|
2004-05-17 |
2014-03-25 |
칼 짜이스 에스엠티 게엠베하 |
중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
|
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7486381B2
(en)
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US8605257B2
(en)
|
2004-06-04 |
2013-12-10 |
Carl Zeiss Smt Gmbh |
Projection system with compensation of intensity variations and compensation element therefor
|
|
CN100594430C
(zh)
|
2004-06-04 |
2010-03-17 |
卡尔蔡司Smt股份公司 |
用于测量光学成像系统的图像质量的系统
|
|
US7481867B2
(en)
*
|
2004-06-16 |
2009-01-27 |
Edwards Limited |
Vacuum system for immersion photolithography
|
|
US7463330B2
(en)
|
2004-07-07 |
2008-12-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP4488006B2
(ja)
|
2004-10-15 |
2010-06-23 |
株式会社ニコン |
露光装置及びデバイス製造方法
|