JP2011142325A - Cmos用歪トランジスタの集積化 - Google Patents
Cmos用歪トランジスタの集積化 Download PDFInfo
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- 230000010354 integration Effects 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 76
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000002210 silicon-based material Substances 0.000 claims abstract description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 51
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 24
- 229910000676 Si alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 108091006146 Channels Proteins 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 15
- 239000012686 silicon precursor Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000001427 coherent effect Effects 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910000078 germane Inorganic materials 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 229910004129 HfSiO Inorganic materials 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910006501 ZrSiO Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- AOYNIINDPKBBKX-UHFFFAOYSA-N hafnium(4+) trioxido(trioxidosilyloxy)silane Chemical compound [Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Hf+4].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Hf+4].[Hf+4].[Hf+4].[Hf+4].[Hf+4] AOYNIINDPKBBKX-UHFFFAOYSA-N 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 148
- 230000015572 biosynthetic process Effects 0.000 description 20
- 230000008021 deposition Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000004941 influx Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】(1)選択的に蒸着されたシリコン材料が、第1の領域における傾斜シリコンゲルマニウム基板材料の格子面間隔より小さい、シリコン材料の格子面間隔によって引き起こされる引っ張り歪を経験するべく、傾斜シリコンゲルマニウム基板の第1の領域上に選択的に蒸着されたシリコン材料のNMOSチャンネル、および(2)選択的に蒸着されたシリコンゲルマニウム材料が、第2の領域における傾斜シリコンゲルマニウム基板の格子面間隔よりも大きい、選択的に蒸着されたシリコンゲルマニウム材料の格子面間隔によって引き起こされる圧縮歪を経験すべく、基板の第2の領域上に選択的に蒸着されたシリコンゲルマニウム材料のPMOSチャンネルを有する。
【選択図】なし
Description
Claims (31)
- 基板の第1の領域上の第1の回路デバイスの第1のチャンネルとして適した第1の層を形成する段階と、
前記基板の異なる第2の領域上の第2の回路デバイスの第2のチャンネルとして適した第2の層を形成する段階と
を備え、
前記基板の第1の界面を決定する前記第1の層は、基板材料の基板の格子面間隔とは異なる第1の格子面間隔を有する第1の材料を含み、
前記第2の層は、第1の格子面間隔とは異なり、および、前記基板の第2の界面を決定する前記基板材料の基板の格子面間隔と異なる第2の格子面間隔を有する異なる第2の材料を含む
方法。 - 前記第1の格子面間隔と前記基板の格子面間隔との差が前記第1の材料中の引っ張り歪を決定し、前記第2の格子面間隔と前記基板の格子面間隔との差が前記第2の材料中の圧縮歪を決定する
請求項1に記載の方法。 - 前記基板は、傾斜シリコン合金材料を含み、
前記第1の層を形成する段階が、前記第1の層中で2軸方向の引っ張り歪を引き起こす、十分な厚さのシリコン材料を蒸着する段階を含み、
前記第2の層を形成する段階が、前記第2の層中で2軸方向のコヒーレントな圧縮歪を引き起こす合金の割合を有する、十分な厚さのシリコン合金材料を蒸着する段階を含む
請求項1に記載の方法。 - 前記基板材料が、前記第1の層中で2軸方向の引っ張り歪、および、前記第2の層中で2軸方向のコヒーレントな圧縮歪を引き起こすのに十分な厚さ、および前記第1および第2の領域における最終的な合金の割合への十分な合金の割合の増加を有する傾斜シリコン合金材料である
請求項1に記載の方法。 - 前記基板材料がSi1−XGeXを含み、前記第1の材料がシリコンを含み、前記第2の材料がSi1−YGeYを含み、X<Yである
請求項1に記載の方法。 - Xが0.1と0.3との間であり、Yが0.2と0.6との間である
請求項5に記載の方法。 - シリコン合金材料の傾斜緩和層を形成するシリコン合金材料の十分な化学気相蒸着によって前記基板材料を形成する段階
をさらに備える請求項1に記載の方法。 - 前記シリコン合金材料の傾斜緩和層を形成する段階が、
5標準リットル毎分(slm)と50slmとの間の水素環境のフロー(H2)中で、500℃と1000℃との間の温度まで前記基板を加熱する段階と、
10Torrと200Torrとの間の圧力に前記基板を与圧する段階と、
50標準立方センチメートル毎分(sccm)と500sccmとの間の流量でシリコン前駆体を流入する段階と、
前記基板の前記第1の界面の表面と前記第2の界面の表面に、10パーセントと35パーセントとの間のGeの割合を有することを引き起こすのに十分な量まで、Ge前駆体の流量を0sccmから最終的な量まで増加する段階と
を含む傾斜緩和SiGeの化学気相蒸着(CVD)エピタキシャル成長をする段階
を有する請求項7に記載の方法。 - 前記シリコン前駆体を流入する段階が、シラン(SiH4)、ジシラン(Si2H6)、およびジクロロシラン(SiH2Cl2)のうちの1つを流入させて、純粋なSiの100オングストロームと1000オングストロームとの間の厚さを有する基板ベース材料を蒸着する段階を含む
請求項8に記載の方法。 - 前記Ge前駆体の流量を増加する段階が、ゲルマン(GeH4)の流量を、0sccmから、前記基板の前記第1の界面の表面および前記第2の界面の表面がGeの前記割合を有することとなる最終的な量まで増加する段階を含む
請求項8に記載の方法。 - 前記傾斜緩和SiGeを形成する段階が、SiGeの化学気相蒸着(CVD)エピタキシャル成長の間に、50sccmと100sccmとの間のHClを流入する段階
を含む請求項7に記載の方法。 - 前記第1の層を形成する段階が、前記第1の領域上にシリコン材料のエピタキシャル層を形成するシリコン材料の十分な選択化学気相蒸着を含む
請求項1に記載の方法。 - 前記シリコン材料のエピタキシャル層を形成する段階が、
5標準リットル毎分(slm)と50slmとの間の水素環境のフロー(H2)中で、600℃と900℃との間の温度まで前記基板を加熱する段階と、
10Torrと200Toorとの間の圧力まで前記基板を与圧する段階と、
50標準立方センチメートル毎分(sccm)と500sccmとの間の流量でシリコン前駆体を流入する段階と
を含む引っ張り歪Siの選択化学気相蒸着(CVD)エピタキシャル成長する段階
を有する請求項12に記載の方法。 - 前記シリコン前駆体を流入する段階が、ジクロロシラン(SiH2Cl2)を流入させて、純粋なSiの100オングストロームと1000オングストロームとの間の厚さを有するシリコン材料を蒸着する段階を含む
請求項13に記載の方法。 - 前記シリコン材料のエピタキシャル層を形成する段階が、引っ張り歪Siの化学気相蒸着(CVD)エピタキシャル成長の間に、50sccmと500sccmとの間のHClを流入する段階を含む
請求項12に記載の方法。 - 前記第2の層を形成する段階が、前記第2の領域上にシリコン合金材料のエピタキシャル層を形成するシリコン合金材料の十分な選択化学気相蒸着を含む
請求項1に記載の方法。 - 前記シリコン合金材料のエピタキシャル層を形成する段階が、
5標準リットル毎分(slm)と50slmとの間の水素環境のフロー(H2)中で、500℃と800℃との間の温度まで前記基板を加熱する段階と、
10Torrと200Toorとの間の圧力まで前記基板を与圧する段階と、
50標準立方センチメートル毎分(sccm)と500sccmとの間の流量でシリコン前駆体を流入する段階と、
20パーセントと50パーセントとの間のGeの割合を有する前記第2の層とすべく、最大100標準立方センチメートル毎分(sccm)の流量でGe前駆体を流入する段階を含む圧縮歪SiGeの選択化学気相蒸着(CVD)エピタキシャル成長する段階
を有する請求項16に記載の方法。 - 前記シリコン前駆体を流入する段階が、ジクロロシラン(SiH2Cl2)を流入させて、SiGeの100オングストロームと1000オングストロームとの間の厚さを有するSiGe材料を蒸着する段階を含む
請求項17に記載の方法。 - 前記Ge前駆体を流入する段階が、SiGe材料の100オングストロームと1000オングストロームとの間の厚さを有する前記第2の層とすべくGeH4を流入させる段階を含む
請求項17に記載の方法。 - 前記シリコン合金材料のエピタキシャル層を形成する段階が、圧縮歪SiGeの化学気相蒸着(CVD)エピタキシャル成長中に、50sccmと500sccmとの間のHClを流入する段階を含む
請求項16に記載の方法。 - 前記第1の層の形成に先立って、前記傾斜SiGe材料の基板を形成する段階と、
前記第1の層の形成に先立って、前記第1の領域と前記第2の領域との間に電気的に絶縁な材料を形成する段階
をさらに備える請求項1に記載の方法。 - 電気的に正に帯電したp型井戸領域を形成する、ホウ素およびアルミニウムのうちの1つを前記第1の領域における前記基板材料にドープする段階と、
電気的に負に帯電したn型井戸領域を形成するリン、ヒ素、およびアンチモンのうちの1つを前記第2の領域における前記基板材料にドープする段階と
をさらに備える請求項21に記載の方法。 - 前記第1の層の形成に先立って前記基板の異なる前記第2の領域を覆う第1の誘電体層を形成する段階と、
異なる前記第2の層の形成に先立って前記第1の層を覆う第2の誘電体層を形成する段階と、
前記第1の層および異なる前記第2の層を覆う第3の誘電体層を形成する段階と
をさらに備え、
前記第3の誘電体層は、二酸化シリコン(SiO2)、酸化ハフニウム(HfO)、ケイ酸ハフニウム(HfSiO4)、二ケイ酸ハフニウム(HfSi4O7)、酸化ジルコニウム(ZrO)、ケイ酸ジルコニウム(ZrSiO4)、酸化タンタル(Ta2O5)の内の1つの原子層成長法によって形成される
請求項22に記載の方法。 - 電気的に正に帯電したp型チャンネル領域を形成するホウ素およびアルミニウムのうちの1つを前記第1の層にドープする段階と、
電気的に負に帯電したn型チャンネル領域を形成するリン、ヒ素、およびアンチモンのうちの1つを前記第2の層にドープする段階と、
前記第1の層を覆う前記第3の誘電体層の表面上にn型ゲート電極を形成する段階と、
前記n型ゲート電極に隣接した前記第1の層中にn型の第1の接合領域およびn型の第2の接合領域を形成する段階と、
前記第2の層を覆う前記第3の誘電体層の表面上にp型ゲート電極を形成する段階と、
前記p型ゲート電極に隣接した前記第2の層中にp型の第1の接合領域およびp型の第2の接合領域を形成する段階と
をさらに備える請求項23に記載の方法。 - 前記基板材料が、
バルク基板上に第1の厚さのSiGe材料を成長する段階と、
絶縁材料を含む基板上に、緩和した最上層の厚さの前記SiGe材料を移す段階とによって形成される段階
をさらに備える請求項1に記載の方法。 - 傾斜緩和シリコンゲルマニウム材料の基板の第1の界面の表面を決定する、Si1−XGeX材料の第1の領域上の第1の回路デバイス用の第1のチャンネルとして適したシリコン材料の層
を備え、
前記シリコン材料の層は、前記第1の界面における前記Si1−XGeX材料の格子面間隔よりも小さい格子面間隔のシリコン材料によって引き起こされる引っ張り歪を受けている
装置。 - 傾斜緩和シリコンゲルマニウム材料の基板の第2の界面の表面を決定する、Si1−XGeX材料の第2の領域上の第2の回路デバイス用の第2のチャンネルとして適したSi1−YGeY材料の層
を備え、
前記Si1−YGeY材料の層は、前記第2の界面における前記Si1−XGeX材料の格子面間隔よりも大きい格子面間隔の前記Si1−YGeY材料によって引き起こされる圧縮歪を受けている
請求項26に記載の装置。 - 前記シリコン材料の層が、厚さにおいて10ナノメータと20ナノメータとの間の厚さを有するシリコン材料のエピタキシャル層であり、前記Si1−YGeY材料の層が、厚さにおいて10ナノメータと20ナノメータとの間の厚さを有するSi1−YGeY材料のエピタキシャル層である
請求項27に記載の装置。 - 傾斜緩和シリコンゲルマニウム材料の基板の第2の界面の表面を決定するSi1−XGeX材料の第2の領域上の第2の回路デバイス用の第2のチャンネルとして適切なSi1−YGeY材料の層
を備え、
前記Si1−YGeY材料の層は、前記第2の界面における前記Si1−XGeX材料の格子面間隔よりも大きい格子面間隔の前記Si1−YGeY材料によって引き起こされる圧縮歪を受けている
装置。 - Xが0.2であり、Yが0.5である
請求項29に記載の装置。 - 傾斜緩和シリコンゲルマニウム材料が、
厚さにおいて1マイクロメータと3マイクロメータとの間の厚さの1つと、
第1および第2の界面において0パーセントから10パーセントと30パーセントとの間まで増加するゲルマニウムの傾斜した濃度と、
深さ方向において1マイクロメータあたり5パーセントGeと15パーセントGeとの間で増加する傾斜濃度の割合と
を有する請求項29に記載の装置。
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DE112004002373T5 (de) | 2006-11-16 |
US20130153965A1 (en) | 2013-06-20 |
TWI256140B (en) | 2006-06-01 |
US7662689B2 (en) | 2010-02-16 |
US8748869B2 (en) | 2014-06-10 |
CN101714528A (zh) | 2010-05-26 |
CN101714528B (zh) | 2014-04-30 |
DE112004002373B4 (de) | 2010-09-16 |
JP5175367B2 (ja) | 2013-04-03 |
TW200527684A (en) | 2005-08-16 |
CN100583395C (zh) | 2010-01-20 |
US20100044754A1 (en) | 2010-02-25 |
WO2005067014A1 (en) | 2005-07-21 |
US20140239345A1 (en) | 2014-08-28 |
KR100940863B1 (ko) | 2010-02-09 |
US9112029B2 (en) | 2015-08-18 |
KR20060103936A (ko) | 2006-10-04 |
US20050136584A1 (en) | 2005-06-23 |
JP2007515808A (ja) | 2007-06-14 |
CN1894774A (zh) | 2007-01-10 |
US8373154B2 (en) | 2013-02-12 |
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