JP2011049592A - プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体 - Google Patents
プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体 Download PDFInfo
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Abstract
【解決手段】チャンバ10に互いに対向して配置される上部電極34およびウエハ支持用の下部電極16を有し、上部電極34に相対的に周波数の高い第1の高周波電力を印加する第1の高周波電源48を接続し、下部電極16に相対的に周波数の低い第2の高周波電力を印加する第2の高周波電源90を接続し、上部電極34に可変直流電源50を接続し、チャンバ10内に処理ガスを供給してプラズマ化し、プラズマエッチングを行う。
【選択図】図1
Description
また、エッチストップ層としての下地SiC層に対して高いエッチング選択比でLow−k膜のエッチングを行なうことができるプラズマ処理方法を提供することを目的とする。
図1は、本発明の実施形態1に係るプラズマエッチング装置を示す概略断面図である。
を用いた場合に、プラズマからウエハに入射するイオン電流量Iionとすると、IDC>(1/2)Iionを満たすことが好ましい。Iion=Zρvione(ただし、Z:荷数、ρ:流速密度、vion:イオン速度、e:電子の電荷量1.6×10−19C)であり、ρは電子密度Neに比例するからIionはNeに比例する。
図1の装置において、半導体ウエハをチャンバ内に装入してサセプタ上に載置し、BARC(有機反射防止膜)およびエッチング対象膜のエッチングを行った。BARCのエッチングの際には、第1の高周波電力を2500W、第2の高周波電力を2000Wとし、処理ガスとしてCH2F2、CHF3、Ar、O2を用いた。また、エッチング対象膜のエッチングの際には、第1の高周波電力を1500W、第2の高周波電力を4500Wとし、処理ガスとしてCH4F6、CF4、Ar、O2を用い、ホールのエッチングを行った。その際に、上部電極に印加する直流電圧を−800V、−1000V、−1200Vと変化させた。その際の電子密度(プラズマ密度)の径方向の分布を図9に示す。この図に示すように、−800Vから−1200Vへと直流電圧の絶対値が増加するほどセンターの電子密度が上昇し、プラズマ密度が均一になる傾向が見られる。この際の、センターとエッジにおけるエッチング形状を模式的に図10に示す。この図から、直流電圧が−800Vから−1000Vとなることによりエッチングの均一性が増加することがわかる。一方、−1000Vから−1200Vになることにより、電子密度の均一性は増加するが、センターにおいてエッチング性が高くなりすぎ、かえってエッチング均一性は低下する。このことから−1000Vがエッチングの均一性が最もよいことが確認された。いずれにしても、直流電圧を調整することにより、均一なエッチングを行うことができることがわかる。
図11は、第1の高周波電源48からプラズマ生成用の高周波電力(60MHz)のパワーを変えて上部電極34に印加した場合に、上部電極34の表面に発生する自己バイアス電圧Vdcと、上部電極34に印加する直流電圧との関係を示すグラフである。ここでは、チャンバ内圧力=2.7Pa、上部電極34に650W、1100Wまたは2200Wの高周波電力、下部電極としてのサセプタ16に2100Wの高周波電力を印加し、処理ガス流量 C4F6/Ar/O2=25/700/26mL/min、上下部電極間距離=25mm、バックプレッシャー(センター部/エッジ部)=1333/4666Pa、上部電極34の温度=60℃、チャンバ10側壁の温度=50℃、サセプタ16の温度=0℃の条件でプラズマを生成させ、上部電極34表面の自己バイアス電圧Vdcを測定した。
チャンバ内圧力=6.7Pa;
高周波電力(上部電極/下部電極)=400W/1500W;
処理ガス流量 C4F8/Ar/N2=6/1000/180mL/min;
上下部電極間距離=35mm;
処理時間=25〜35秒
バックプレッシャー(ヘリウムガス:センター部/エッジ部)=2000/5332Pa;
上部電極34の温度=60℃;
チャンバ10側壁の温度=60℃;
サセプタ16の温度=0℃
高周波電力(上部電極/下部電極)を800W/2500Wに変更した以外はエッチング条件1と同様とした。
また、ビア頂部のCD(Critical Dimension)の拡大を抑制しながら、エッチングレートを大きく改善できることも確認された。エッチングレートの向上とCDの制御(CD拡大の抑制)とは、従来のエッチング技術では両立させることが困難であったが、直流電圧を印加することにより、両者を両立させ得ることが示された。
表2は、エッチング条件1を基準に、上部電極34への高周波電力を変化させた場合のエッチング特性である。この表2から、上部電極34へ供給する高周波電力を大きくするとエッチングレートは向上するが、対SiC選択比は小さくなる傾向が示された。一方、この条件では、上部電極34へ供給する高周波電力の変化がCDに与える影響は少なく、また、対レジスト選択比は高周波パワー400Wが突出して優れていた。以上の結果から、上部電極34への高周波パワーとしては、概ね200〜800Wの範囲が好ましいことが示された。
チャンバ内圧力=26.7Pa;
高周波電力(上部電極/下部電極)=300W/1000W;
処理ガス流量 CF4/N2/Ar/CHF3=180/100/180/50mL/min;
上下部電極間距離=35mm;
処理時間=10秒
バックプレッシャー(センター部/エッジ部)=2000/5332Pa;
上部電極34の温度=60℃;
チャンバ10側壁の温度=60℃;
サセプタ16の温度=20℃
チャンバ内圧力=4.0Pa;
高周波電力(上部電極/下部電極)=1000W/1000W;
処理ガス流量 C4F8/N2/Ar=6/260/1000mL/min;
オーバーエッチ量:30%
上下部電極間距離=35mm
※他の条件は、上記メインエッチング条件と同様とした。
また、上記エッチング条件の下では、上部電極34に−900Vの直流電圧を印加することにより、対SiC選択比だけでなく、表6に示すように、対レジスト選択比も改善された。さらに、溝の幅に相当するCDを大きくせずに制御しながら、SiOC系膜302のエッチングレートを大幅に向上させることが可能であった。そして、エッチング後の溝を構成するラインの粗さ(ラインエッチングラフネス;LER)についても、大幅に低減することができた。
図34は、本発明の実施形態2に係るプラズマエッチング装置を示す概略断面図である。なお、図34において、図1と同じものには同じ符号を付して説明を省略する。
Lo=K・ln(b/ao) ‥‥‥(1)
ただし、Kは導波路の移動度および誘電率で決まる定数である。
Li=K・ln(b/ai) ‥‥‥(2)
Pmax/Eomax 2=ao2[ln(b/ao)]2/2Zo ‥‥(3)
ただし、Zoは整合器46側からみた当該同軸線路の入力インピーダンスであり、EomaxはRF伝送系の最大電界強度である。
なお、実施形態3において、第1、第2の実施形態と共通するものには同じ符号を付すことにする。
周波電源89から高い周波数領域(例えば、10MHz以上)の高周波電力を供給しているので、プラズマを好ましい状態で高密度化することができ、より低圧の条件下でも高密度プラズマを形成することができる。
を用いた場合に、プラズマからウエハに入射するイオン電流量Iionとすると、IDC>(1/2)Iionを満たすことが好ましい。Iion=Zρvione(ただし、Z:荷数、ρ:流速密度、vion:イオン速度、e:電子の電荷量1.6×10−19C)であり、ρは電子密度Neに比例するからIionはNeに比例する。
図43は、下部電極であるサセプタ16に印加する第1の高周波電力の周波数を40MHz、第2の高周波電力の周波数を3.2MHzとし、圧力:4PaとしたHARCエッチングの条件で、上部電極に印加する負の直流電圧の絶対値を0V、300V、600V、900Vと変化させた際における、各高周波電力の出力と電子密度分布との関係を示す図である。また、図44は、同様の周波数の2つの高周波電力を印加し、圧力を6.7PaのViaエッチングの条件で、同様に上部電極に印加する直流電圧の絶対値を0V、300V、600V、900Vと変化させた際における、各高周波電力の出力と電子密度分布との関係を示す図である。これらの図に示すように、印加する直流電圧の絶対値が大きくなるに従って、電子密度(プラズマ密度)が上昇しているのがわかる。図45は、上記HARCエッチングで、第1の高周波電力を3000W、第2の高周波電力を4000Wにした場合のウエハ径方向の電子密度分布を示す図である。この図に示すように、印加する直流電圧の絶対値が大きくなるほど電子密度が高くなることがわかる。
図41の装置において、半導体ウエハをチャンバ内に装入してサセプタ上に載置し、処理ガスとしてCF4ガス、CHF3ガス、Arガス、N2ガスをチャンバ内に導入し、チャンバ内の圧力を26.6Paとし、第1の高周波電力を40MHzで300W、第2の高周波電力を3.2MHzで1000Wとして下部電極であるサセプタに印加するというトレンチエッチングの条件で、上部電極への直流電圧を印加しない場合と−600W印加した場合とでウエハ径方向の電子密度(プラズマ密度)分布を測定した。その結果を図46に示す。この図に示すように、直流電圧を印加しない場合には、ウエハ中心部の電子密度が他の部分よりも低いのに対し、直流電圧を印加することにより、ウエハ中心部の電子密度を上昇させて電子密度が均一化されていることが確認された。また、直流電圧を印加することにより、電子密度が全体的に上昇した。
に、適宜の手段により直流電圧に重畳して実施形態1における図13に示すような極短い逆極性のパルスを周期的に与えて電子を中和する方法も有効である。
図58は、本発明の実施形態4に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。なお、図58において、図1と同じものには同じ符号を付して説明を省略する。
図59は、本発明の実施形態5に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図59においても、図1と同じものには同じ符号を付して説明を省略する。
図60は、本発明の実施形態6に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図60においても、図1と同じものには同じ符号を付して説明を省略する。
図61は、本発明の実施形態7に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図61において、図1および図60と同じものには同じ符号を付して説明を省略する。
図62は、本発明の実施形態8に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図62において、図1および図60と同じものには同じ符号を付して説明を省略する。
図63は、本発明の実施形態9に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図63においても、図1と同じものには同じ符号を付して説明を省略する。
図64は、本発明の実施形態10に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図64においては、図1および図63と同じものには同じ符号を付して説明を省略する。
図65は、本発明の実施形態11に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図65において、図1および図63と同じものには同じ符号を付して説明を省略する。
図66は、本発明の実施形態12に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図66においては、図1と同じものには同じ符号を付して説明を省略する。
図67は、本発明の実施形態13に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図67においては、図1と同じものには同じ符号を付して説明を省略する。
プラズマ処理装置においては、通常、図68に示すようにウエハWの外周に隣接してフォーカスリング24が設けられているが、プラズマ処理中にはフォーカスリング24の温度が上昇し、そのためウエハWのエッジ部および裏面にデポ173が付着する。デポの付着を防止するためにフォーカスリング24を冷却するとこのようなデポの付着は減少するが、ウエハWのエッジ部におけるエッチング特性(特にレジストのエッチングレート等)が悪化し、デポ付着とエッチング特性とがトレードオフの関係になってしまう。
図74は、本発明の実施形態14に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図74においては、図1と同じものには同じ符号を付して説明を省略する。
図76は、本発明の実施形態15に係るプラズマ処理装置の要部を簡略化して示す概略断面図である。図76においては、図1および図74と同じものには同じ符号を付して説明を省略する。
図79は、本発明の実施形態16に係るプラズマエッチング装置を簡略化して示す概略断面図である。この装置は、下部電極であるサセプタ16に第1の高周波電源200からプラズマ生成用の例えば13.56MHzの高周波(RF)電力を印加する下部RF1周波印加タイプのプラズマエッチング装置であって、図示のように上部電極234´に可変直流電源204を接続して所定の直流(DC)電圧が印加されるプラズマエッチング装置である。図79は詳細を省略した図であるが、本実施形態のプラズマエッチング装置は、下部に高周波電力を1周波のみ印加する点以外は、実施形態3の下部RF2周波印加タイプのプラズマエッチング装置と同じである。
図80は、本発明の実施形態17に係るプラズマエッチング装置を簡略化して示す概略断面図である。この装置は、下部電極であるサセプタ16に第1の高周波電源89から整合器87を介して第1の高周波(RF)電力を印加するとともに第2の高周波電源90から整合器88を介して第2の高周波(RF)電力を印加し、さらに第3の高周波電源224から第3の高周波電力を整合器225を介して上部電極34に印加する上部RF1周波下部RF2周波タイプのプラズマエッチング装置であって、図示のように上部電極34に可変直流電源50を接続して所定の直流(DC)電圧が印加されるプラズマエッチング装置である。なお、このプラズマエッチング装置は、プラズマ形成用の高周波電力を出力する高周波電源が第3の高周波電源であることが好ましく、イオン引き込み用の高周波電力を出力する高周波電源が第1の高周波電源および第2の高周波電源であることが好ましい。
16…サセプタ(下部電極)
34,34′…上部電極
44…給電棒
46,88…整合器
48…第1の高周波電源
50…可変直流電源
51…コントローラ
52…オン・オフスイッチ
66…処理ガス供給源
84…排気装置
90…第2の高周波電源
91…GNDブロック
W…半導体ウエハ(被処理基板)
Claims (14)
- 被処理基板が収容され、真空排気可能な処理容器と、
処理容器内に対向して配置される第1電極および第2電極と、
前記第1電極または第2電極にプラズマ形成用の高周波電力を供給する高周波電力供給ユニットと、
前記処理容器内に処理ガスを供給する処理ガス供給ユニットと
を具備し、前記第1電極および第2電極との間に処理ガスのプラズマを生成して被処理基板の所定の層をプラズマ処理するプラズマ処理装置であって、
前記処理容器内の所定の部材に直流電圧または交流電圧を印加する電源をさらに具備することを特徴とするプラズマ処理装置。 - 前記直流電圧または交流電圧は、パルス状または変調されたものであることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記所定の部材は、処理容器内に存在する絶縁部材に埋設された導体、または処理容器の壁部を構成する部材であることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記電源の極を前記所定の部材に接続し、他方の極を前記処理容器内の前記所定の部材から絶縁された他の所定の部材に接続することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記所定の部材および前記他の所定の部材は、処理容器内に存在する絶縁部材に埋設された導体、または処理容器の壁部を構成する部材であることを特徴とする請求項4に記載のプラズマ処理装置。
- 前記第1電極は上部電極であり、前記第2電極は被処理体を載置する下部電極であり、前記第2電極上方の被処理基板の外周部の被処理基板に隣接した位置に設置された冷却可能な冷却リングと、その外側または上側に設置された補正リングとを有し、前記補正リングが直流電圧または交流電圧が印加される前記所定の部材として機能することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記冷却リングは、前記冷却リングと前記第2電極との間に放熱性が良好な部材を配置するか、または前記冷却リングと前記第2電極との間に熱伝達ガスを流すことにより冷却されることを特徴とする請求項6に記載のプラズマ処理装置。
- 前記冷却リングの温度を計測する温度計測機構と、前記冷却リングを冷却する冷却部と、冷却部による前記内側リングの冷却を制御する冷却制御部とをさらに具備することを特徴とする請求項6に記載のプラズマ処理装置。
- 前記第2電極には高周波電力が供給され、前記補正リングへの給電は、前記第2電極を介して行われ、前記冷却リングと前記第2電極の間には誘電体部材が設けられていることを特徴とする請求項6に記載のプラズマ処理装置。
- 前記第1電極は上部電極であり、前記第2電極は被処理体を載置する下部電極であり、前記第2電極上方の被処理基板の外周部の被処理基板に隣接した位置に設置された第1補正リングと、その外側または上側に設置された第2補正リングとを有し、前記第1補正リングおよび第2補正リングが直流電圧または交流電圧が印加される前記所定の部材として機能することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記第1補正リングは冷却されることを特徴とする請求項10に記載のプラズマ処理装置。
- 前記第1電極は上部電極であり、前記第2電極は被処理体を載置する下部電極であり、前記第2電極上方の被処理基板の外周部の被処理基板に隣接した位置に設置された冷却可能な冷却リングと、その外側または上側に設置された補正リングとを有し、前記冷却リングと前記補正リングの少なくとも一方が直流電圧または交流電圧が印加される前記所定の部材として機能することを特徴とする請求項1に記載のプラズマ処理装置。
- 被処理基板が収容され、真空排気可能な処理容器と、
処理容器内に対向して配置される第1電極および第2電極と、
前記第1電極または第2電極にプラズマ形成用の高周波電力を供給する高周波電力供給ユニットと、
前記処理容器内に処理ガスを供給する処理ガス供給ユニットとを具備し、前記第1電極および第2電極との間に処理ガスのプラズマを生成して被処理基板の所定の層をプラズマ処理するプラズマ処理装置を用いたプラズマ処理方法であって、
プラズマを形成する際に、前記処理容器内の所定の部材に直流電圧または交流電圧を印加することを特徴とするプラズマ処理方法。 - コンピュータ上で動作する制御プログラムが記憶されたコンピュータ記憶媒体であって、
前記制御プログラムは、実行時に、請求項13に記載のプラズマ処理方法が行われるように、プラズマ処理装置を制御させることを特徴とするコンピュータ読み取り可能な記憶媒体。
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