JP2016506070A - 基板処理装置及びヒータの温度調節方法 - Google Patents
基板処理装置及びヒータの温度調節方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000001816 cooling Methods 0.000 claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000002826 coolant Substances 0.000 claims abstract description 5
- 239000003507 refrigerant Substances 0.000 claims description 40
- 238000007599 discharging Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 87
- 238000005137 deposition process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
前記冷却リングは,前記ガス流路に連結されて前記冷却リングの外側に向かって開放された流出口を有する。
前記冷却リングは前記ヒータから離隔配置される。
以下,本発明の好ましい実施形態を添付した図6及び図7を参照してより詳細に説明する。本発明の実施形態は様々な形に変形してもよく,本発明の範囲が後述する実施形態に限られると解釈してはならない。本実施形態は,当該発明の属する技術分野における通常の知識を有する者に本発明をより詳細に説明するために提供されるものである。よって,図面に示した各要素の形状はより明確な説明を強調するために誇張されている可能性がある。
Claims (10)
- 基板に対する工程が行われる工程空間を有するメインチャンバーと,
前記工程空間に設置され,前記基板が上部に置かれ,前記基板を加熱するヒータと,
前記ヒータの周縁に沿って配置され,複数個のガス流路が前記ヒータの周縁に沿って離隔形成され,外部から供給された冷媒が流れる冷却リングと,を含むことを特徴とする基板処理装置。 - 前記冷却リングは,前記ガス流路に連結され,前記冷却リングの内側又は外側に向かって開放された流出口を有することを特徴とする請求項1記載の基板処理装置。
- 前記基板処理装置は,
前記工程空間に設置され,外部から供給された冷媒を前記流路に向かってそれぞれ供給するガス供給管を有するガイド部材を更に含み,
前記ガイド部材は,
前記メインチャンバーの底面に沿って連結される底板と,
前記底板の側部に沿って連結される側板と,
前記ヒータに向かって突出され,前記側板に連結され,前記冷却リングを支持する支持部材と,を更に含むことを特徴とする請求項2記載の基板処理装置。 - 前記ガイド部材は,前記側板の上部に起立設置される突出部を有し,
前記基板処理装置は,
前記突出部の上部に連結され,シャワーヘッドを介して供給された工程ガスを外部に排出可能な工程ガス排出孔及び前記流出口に対応する位置に形成されて前記冷媒を外部に排出可能な冷媒排出孔を有する排気リングを更に有することを特徴とする請求項3記載の基板処理装置。 - 前記ガス供給管にそれぞれ連結され,前記ガス供給管を開閉するバルブを備えることを特徴とする請求項3記載の基板処理装置。
- 前記冷却リングは前記ガス流路の上部に配置され,シャワーヘッドを介して供給された工程ガスを外部に排出可能な上部排出孔を有することを特徴とする請求項3記載の基板処理装置。
- 前記ガス流路は前記ヒータを中心に等角を成して配置されることを特徴とする請求項1記載の基板処理装置。
- 前記冷却リングは,前記ヒータから離隔配置されることを特徴とする請求項1記載の基板処理装置。
- 上部に基板が置かれたヒータの周りに冷却リングを配置し,前記冷却リングは前記ヒータの周縁に沿って離隔形成された複数のガス流路を有する配置ステップと,
前記ヒータの温度分布に応じて予め設定された温度より高い温度を有する前記ヒータの高温領域を決定し,前記ガス流路のうち前記高温領域の外側に配置されたガス流路にのみ冷媒を供給して前記ヒータの温度分布を調節する調節ステップと,を含み,
前記調節ステップは複数のガス供給管をそれぞれの前記ガス流路に連結し複数のバルブをそれぞれの前記ガス供給管に設置して,前記高温領域の外側に配置された前記ガス流路上の前記バルブは開放し,残りのバルブは閉鎖するヒータの温度調節方法。 - 前記調節ステップは,前記冷却リングの内側又は外側に形成されてそれぞれの前記ガス流路に連結された複数の流出口のうち,前記高温領域の外側に配置された前記ガス流路に連結された流出口を介して,前記冷媒を排出するステップを更に含む請求項9記載のヒータの温度調節方法。
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KR10-2012-0148665 | 2012-12-18 | ||
KR1020120148665A KR101375742B1 (ko) | 2012-12-18 | 2012-12-18 | 기판처리장치 |
PCT/KR2013/011839 WO2014098486A1 (ko) | 2012-12-18 | 2013-12-18 | 기판처리장치 및 히터의 온도조절방법 |
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JP2016506070A true JP2016506070A (ja) | 2016-02-25 |
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US (1) | US9758870B2 (ja) |
JP (1) | JP6088659B2 (ja) |
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US9963782B2 (en) * | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
KR101930788B1 (ko) * | 2016-11-23 | 2018-12-24 | 주식회사 조인솔루션 | 기판 프로세싱 챔버의 냉각기 |
US10801106B2 (en) * | 2016-12-15 | 2020-10-13 | Asm Ip Holding B.V. | Shower plate structure for exhausting deposition inhibiting gas |
CN106987808B (zh) * | 2017-05-15 | 2019-04-09 | 成都西沃克真空科技有限公司 | 一种镀膜机用基片加热装置 |
JP7008602B2 (ja) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | 成膜装置および温度制御方法 |
US11078568B2 (en) * | 2019-01-08 | 2021-08-03 | Applied Materials, Inc. | Pumping apparatus and method for substrate processing chambers |
KR102315665B1 (ko) * | 2019-08-19 | 2021-10-22 | 세메스 주식회사 | 기판 처리 장치 |
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CN104871292A (zh) | 2015-08-26 |
WO2014098486A1 (ko) | 2014-06-26 |
JP6088659B2 (ja) | 2017-03-01 |
US20150299860A1 (en) | 2015-10-22 |
CN104871292B (zh) | 2017-04-26 |
US9758870B2 (en) | 2017-09-12 |
KR101375742B1 (ko) | 2014-03-19 |
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