JP2010519596A - 三層構造物のパターニング・アプリケーションのための組成物、コーティング、及びフィルム、並びに、これらの製造方法 - Google Patents
三層構造物のパターニング・アプリケーションのための組成物、コーティング、及びフィルム、並びに、これらの製造方法 Download PDFInfo
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- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- HYVDRSVZYMKTKG-UHFFFAOYSA-M tetramethylphosphanium;acetate Chemical compound CC([O-])=O.C[P+](C)(C)C HYVDRSVZYMKTKG-UHFFFAOYSA-M 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical group CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical group Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- SWZDQOUHBYYPJD-UHFFFAOYSA-N tridodecylamine Chemical compound CCCCCCCCCCCCN(CCCCCCCCCCCC)CCCCCCCCCCCC SWZDQOUHBYYPJD-UHFFFAOYSA-N 0.000 description 1
- QALDFNLNVLQDSP-UHFFFAOYSA-N triethoxy-(2,3,4,5,6-pentafluorophenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=C(F)C(F)=C(F)C(F)=C1F QALDFNLNVLQDSP-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- KGWNTHHPMKEAIK-UHFFFAOYSA-N trifluoro(phenyl)silane Chemical compound F[Si](F)(F)C1=CC=CC=C1 KGWNTHHPMKEAIK-UHFFFAOYSA-N 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
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Abstract
【選択図】図1
Description
高比率無機材料及び/又は無機化合物が、本発明の組成物やコーティング中の成分として考えられており、少なくとも1種の溶媒以外に、どの成分についてもできるだけ高い濃度で組成物や材料中に存在している。本発明の実施態様では、これらの無機化合物及び/又は無機材料が、他の成分もしくは原子に対する高モル比(「高比率」)の無機原子−酸素結合を有し、その結果として、より多くの炭素原子を含有する化合物と比較して、化合物の「無機的特性」が増大する。これらの無機材料は、一般には、同一の波長では非吸収性又はわずかに吸収性であり、組成物又はこれにより得られるコーティングもしくはフィルムの吸収特性や接着特性に影響を及ぼすことなく、組成物に無機的特性を付与するように設計されている。幾つかの実施態様においては、高比率無機材料及び/又は無機化合物がケイ素を含む。組成物中により多くのケイ素を組み込んだ場合、ケイ素が最終的な組成物の無機的特性の増大に寄与する。
本発明の組成物、材料、コーティング、及びフィルムはさらに、少なくとも1種の吸収性化合物を含む。上記の高比率無機化合物、及び本明細書に開示の成分とは異なり、これらの本発明の吸収性化合物は、特定波長の光を吸収する、そして場合によっては、特定波長の光を非常に強く吸収する部分を化合物中に含む。多くのナフタレン系化合物、フェナントレン系化合物、及びアントラセン系化合物は、248nm以下に顕著な吸収を有する。ベンゼン系化合物(ここではフェニル系化合物と同等)は、200nmより短い波長で顕著な吸収を有する。これらのナフタレン系化合物、アントラセン系化合物、フェナントレン系化合物、及びフェニル系化合物は色素と呼ばれることが多いが、ここでは吸収性化合物という用語を使用する。なぜなら、これら化合物の吸収は、スペクトルの可視領域の波長に限定されないからである。
前述したように、幾つかの本発明の組成物は、少なくとも1種の縮合触媒と少なくとも1種の酸触媒を含む。本明細書中に使用される「触媒」という用語は、化学反応に対する活性化エネルギーを低下させることによって化学反応の速度に影響を及ぼすあらゆる物質を意味している。場合によっては、触媒は、それ自体が消費されることなく、あるいは化学変化を受けることなく、化学反応の活性化エネルギーを低下させる。
前述したように、少なくとも1種の溶媒を組成物に加えることができる。溶媒は、コーティング組成物の成分と混合する溶媒、あるいはコーティング組成物の成分を溶媒和する溶媒が必要とする特性以外に、極性及び/又は官能基に基づいて、特定のコーティング組成物に対して具体的に選択することができる。代表的な溶媒は、本発明に使用されるべき非無機物質及び吸収性化合物と溶媒和することができる溶媒であり、したがってこれらの溶媒は、コーティング組成物、コーティング材料、及びコーティングフィルムとして使用することができる。本発明の溶媒としては、有機分子、有機金属分子、及び無機分子の、所望の温度で蒸発除去される、任意の単独物質あるいは任意の適切な混合物がある。溶媒はさらに、極性化合物及び無極性化合物の、任意の単独物質あるいは任意の適切な混合物を含んでよい。幾つかの実施態様においては、溶媒は、水、エタノール、プロパノール、アセトン、トルエン、エーテル、シクロヘキサノン、ブチロラクトン、メチルエチルケトン、メチルイソブチルケトン、N−メチルピロリドン、ポリエチレングリコールメチルエーテル、メシチレン、乳酸エチル、PGMEA、アニソール、及びポリエーテル系列の溶媒〔例えば、カルビトール(ヒドロキシ基、アルコキシ基、又はカルボキシ基でキャップされたエチレングリコールエーテルの系列を構成する)や類似のプロピレングリコールエーテル〕を含む。
本明細書において意図する組成物及び/又はコーティング材料を製造する1つの本発明の方法は、少なくとも1種の高比率無機化合物、少なくとも1種の吸収性化合物、少なくとも1種の縮合触媒、少なくとも1種の酸触媒、酸/水混合物(例えば、硝酸/水混合物)、及び反応混合物を生成させるための少なくとも1種の溶媒;並びに、前記反応混合物を約40℃以上の温度に加熱するか、又は前記反応混合物を還流して反射防止組成物を得ること;を含む。次いで、生成した吸収性組成物を少なくとも1種の溶媒で希釈して、種々の厚さのフィルムを形成するコーティング溶液を得る。
本明細書中に開示のコーティング材料とコーティング溶液は、一般には、三層アプリケーション、三層構造物、及び/又は三層パターニングプロセスにおいて適用可能であると考えられる。本明細書では、有機基層(第1の層)、反射防止組成物、及び/又は本明細書にて意図するフィルム(第2の層)、並びに、互いに結合したフォトレジスト材料(第3の層)を含む三層構造物も意図されている。本発明で意図されているコーティング、組成物、及び溶液を、特定の製造プロセスにしたがって(一般には、従来のスピンオン付着法、蒸着、又は化学蒸着によって)種々の基板及び/又は表面に施して、犠牲層、層状材料、半導体プロセシングにおいて使用される層、又は電子部品において使用される層を形成することができる。これらの技法は、無機コーティングを得るためのディスペンススピン(a dispense spin)、シックネススピン(a thickness spin)、及び熱ベーキング工程(thermal bake steps)を含む。代表的な方法は、1000〜4000rpmでの約20秒間のシックネススピン、及び80℃〜300℃の温度での1〜3回(それぞれ約1分)のベーキング工程を含む。本発明の無機コーティングは、約1.3〜約2.0の屈折率と約0.03より大きい減衰係数を示す。
480gのエタノールと240gのPGMEAの混合溶媒に、266.62gのTEOS、45.67gのVTEOS、及び19.23gのPTEOSのモノマーを個別に加えた。攪拌しながら、9.04gの0.1N硝酸と151.36gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却し、70.72gのブタノールを加えて、室温で一晩攪拌した。溶媒中のポリマーを1884gのPGMEAで希釈し、次いで16.5gの1%TMAN(縮合触媒)と1.77gの5N硝酸を加えた。1500rpmのスピン速度で測定される標的最終配合物の粘稠性を、希釈工程で加えるPGMEAの量により調整した。この溶液を濾過して最終生成物を得た。最終溶液を、濾過ユニット(これは任意的である)を介してポンプで移送し、他のポリマーの製造における中間体としてその場で使用、あるいは商業販売用に貯蔵/包装した。
実施例1からの生成物を、ソリューションQC〔分子量に関してはGPCによって、液体成分に関してはGCによって、そして粒子に関してはリキッド・パーティカル・カウンターによって〕とフィルムQC〔厚さに関してはサーモウェーブによって、そして湿潤エッチング速度に関してはDHFによって〕の標準法を使用してチェックした。生成物のQCデータは、エージングゼロ日目に検討した。次いで材料を、未開封の新しいボトル中にて室温又は5℃でエージングした。エージング日数によるQC項目の変化を観察するために、15日目、30日目等に同じQC手順を使用してエージング材料をチェックした。
30gのエタノールと15gのPGMEAとの混合溶媒に、17.18gのTEOSモノマー、2.85gのVTEOSモノマー、及び0.61gのPTEOSモノマーを個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却し、4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーを、サンプル1の場合と同じGPC法によって分析し、Mn=996amu及びMw=1359amuの分子量を得た。
480gのエタノールと240gのPGMEAとの混合溶媒に、89.99gのTEOSモノマー、197.92gのVTEOSモノマー、及び30.77gのPTEOSモノマーを個別に加えた。攪拌しながら、9.04gの0.1N硝酸と151.36gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。70.72gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーを、前述の実施例に記載したのと同じGPC法によって分析し、Mn=745amu及びMw=929amuの分子量を得た。
1リットルのフラスコ中に、297gの2−プロパノール、148gのアセトン、123gのTEOS、77gのMTEOS、60gの9−アントラセンカルボキシメチルトリエトキシシラン、0.6gの0.1M硝酸、及び72gの脱イオン水を混合した。該フラスコを4時間還流させた。この溶液に、115gのブタノール、488gの2−プロパノール、245gのアセトン、329gのエタノール、及び53gの脱イオン水を加えた。本溶液を濾過した。本溶液を分配し、次いで3000rpmで20秒スピンコーティングを行い、80℃と180℃でそれぞれ1分ベーキングを行った。最終的なポリマーの分子量は、Mw=1200amuであった。実施例1の場合と同一の手順を使用して光学特性を測定した。フィルムの厚さは1635Åであった。248nmにて、屈折率(n)は1.373、減衰係数(k)は0.268であった。さらに、TESACは365nmで吸収を示し、本実施例に記載の組み込みにて、365nmでのn値とk値はそれぞれ1.55及び0.06であった。248nmと365nmでの減衰係数は、加えるTESAC(9−アントラセンカルボキシメチルトリエトキシシラン)の量を減少/増大させることによって減少/増大させることができる。
30gのエタノールと15gのPGMEAとの混合溶媒に、17.23gのTEOSモノマー、2.85gのVTEOSモノマー、及び0.76gのペンタフルオロフェニルトリエトキシシラン(5F−PTEOS)モノマーを個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーを、前述の実施例に記載したのと同一のGPCシステムによって分析し、Mn=984amu及びMw=1372amuの分子量を有することが分かった。
30gのエタノールと15gのPGMEAとの混合溶媒に、16.66gのTEOSモノマーと3.81gのVTEOSモノマーのみを個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を加え、反応混合物を81℃で4時間加熱還流してから冷却した。4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーを、上記と同じGPCシステムによって分析し、Mn=1021amu及びMw=1349amuの分子量を有することが分かった。
本実施例においては、TEOSを使用するとともに、架橋密度を増大させるために高含量の水を組み込んだ。2つの意図する組成物(低い水含量と高い水含量)が得られ、2つの組成物の差異は水の使用量であった〔下記の表4(水含量の低い組成物)と表5(水含量の高い組成物)に示す〕。
445.56gのIPA溶媒に243.425gのTEOSモノマー(又は特定の割合で別のモノマー)を加えた。攪拌しながら、5.599gの0.1N硝酸と66.86gの水との混合物を加え、反応混合物を50℃で4時間加熱還流してから冷却し、室温で一晩攪拌した。溶媒中のポリマーを、2284.332gのエタノール/2−ヘプタノン(70/30混合物)で希釈した。これにより低いpH(pH約2.5)の生成物が得られた。より高いpH(pH約4)の生成物の場合は、0.1056gのアミノプロピルTEOS(APTEOS)(塩基)を加えることによって製造した。溶液を濾過して最終生成物を得た。最終溶液を、濾過ユニット(これは任意的である)を介してポンプで移送し、他のポリマーの製造における中間体としてその場で使用、あるいは商業販売用に貯蔵/包装した。(GCによる分析結果:固体3.02%;水1.35%;エタノール60.38%;IPA14.08%;及び2−ヘプタノン21.18%)。この組成物に対してnとkを測定し、それぞれ1.50及び0であった。250℃でベーキングしたフィルムに関して、500:1 BOEに対する湿潤エッチング速度(WER)(Å/分)を測定し、3760Å/分であった。PTEOS酸化物の湿潤エッチング速度は30Å/分であった。前述したのと同一のGPCシステムによる分子量測定によれば、Mn=1303amu及びMw=1809amuであった。
445.56gのIPA溶媒に243.425gのTEOSモノマー(又は特定の割合で別のモノマー)を加えた。攪拌しながら、5.599gの0.1N硝酸と120.348gの水との混合物を加え、反応混合物を50℃で4時間加熱還流してから冷却し、室温で一晩攪拌した。溶媒中のポリマーを、1214.248gのエタノール/2−ヘプタノン(70/30混合物)で希釈した。これにより低いpH(pH約2.5)の生成物が得られた。より高いpH(pH約4)の生成物の場合は、0.0912gのAPTEOS(塩基)を加えることによって製造した。溶液を濾過して最終生成物を得た。最終溶液を、濾過ユニット(これは任意的である)を介してポンプで移送し、別ポリマーの製造における中間体としてその場で使用、あるいは商業販売用に貯蔵/包装した。(GCによる分析結果:固体分4.07%;水4.39%;エタノール54.91%;IPA22.39%;及び2−ヘプタノン14.24%)。この組成物に対してnとkを測定し、それぞれ1.54及び0であった。250℃でベーキングしたフィルムに関して、500:1 BOEに対する湿潤エッチング速度(WER)(Å/分)を測定し、300Å/分であった。PTEOS酸化物の湿潤エッチング速度は30Å/分であった。前述したのと同一のGPCシステムによる分子量測定によれば、Mn=2050amu及びMw=3362amuであった。
600gのエタノールと300gのPGMEAとの混合溶媒に、395.77gのTEOSモノマーと24.04gのPTEOSモノマーを個別に加えた。攪拌しながら、11.3gの0.1N硝酸と189.2gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。88.4gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーの分子量は、Mn=1828amu及びMw=3764amuであった(前述したのと同一のGPCシステムにより分析した)。
480gのエタノールと240gのPGMEAとの混合溶媒に、266.62gのTEOSモノマー、45.67gのVTEOSモノマー、及び19.23gのPTEOSモノマー(あるいは特定の割合で別のモノマー)を個別に加えた。攪拌しながら、9.04gの0.1N硝酸と151.36gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。反応混合物に70.72gのブタノールを加え、本混合物を室温で一晩攪拌した。得られたポリマーの分子量は、Mn=1153amu及びMw=1802amuであった(前述したのと同一のGPCシステムにより分析した)。
30gのエタノールと15gのPGMEAとの混合溶媒に、17.23gのTEOSモノマー、2.85gのVTEOSモノマー、及び0.59gのBen−TEOSモノマーを個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。前述したのと同一のGPCシステムによる分析では、得られたポリマーの分子量は、Mn=956amu及びMw=1386amuであった。溶媒混合物中のポリマーを123gのPGMEAで希釈し、本溶液をスピンコーティングし、フィルムをベーキングした。得られたフィルムの厚さは81nmであった(前述したのと同一のn&kツールによれば、193nmでのnは1.63、193nmでのkは0.08であった)。
30gのエタノールと15gのPGMEAとの混合溶媒に、16.46gのTEOSモノマー、2.85gのVTEOSモノマー、及び0.72gのPTEOSモノマーを、0.79gのNCS−TEOSとともに個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。前述したのと同一のGPCシステムによる分析では、得られたポリマーの分子量は、Mn=900amu及びMw=1300amuであった。溶媒混合物中のポリマーを123gのPGMEAで希釈し、本溶液をスピンコーティングし、フィルムをベーキングした。得られたフィルムの厚さは85nmであった(前述したのと同一のn&kツールによれば、193nmでのnは1.65、193nmでのkは0.09であった)。
30gのエタノールと15gのPGMEAとの混合溶媒に、16.25gのTEOSモノマー、2.85gのVTEOSモノマー、0.962gのPTEOSモノマー、及び0.99gのDEPE−TEOSモノマーを個別に加えた。攪拌しながら、0.57gの0.1N硝酸と6.76gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。4.42gのブタノールを加え、本混合物を室温で一晩攪拌した。前述したのと同一のGPCシステムによる分析では、得られたポリマーの分子量は、Mn=925amu及びMw=135amuであった。溶媒混合物中のポリマーを122gのPGMEAで希釈し、本溶液をスピンコーティングし、フィルムをベーキングした。得られたフィルムの厚さは85nmであった(前述したのと同一のn&kツールによれば、193nmでのnは1.60、193nmでのkは0.10であった)。
60gのエタノールと30gのPGMEAとの混合溶媒に、33.33gのTEOSモノマー、5.71gのVTEOSモノマー、及び2.40gのPTEOSモノマーを個別に加えた。攪拌しながら、1.13gの0.1N硝酸と18.92gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。反応混合物に8.84gのブタノールを加え、本混合物を室温で一晩攪拌した。前述したのと同じGPCシステムによる分析によれば、得られたポリマーの分子量は、Mn=1121amu及びMw=1723amuであった。
17.94gのポリマー溶液に、26.10gのPGMEA、0.153gの1%TMAN水溶液、及び0.09gの1N硝酸を加えて最終生成物を得た。前述したのと同一のGPCシステムによる分析では、ポリマーの分子量は、Mn=1112amu及びMw=1717amuであった。本溶液を濾過し、シリコンウエハー上にスピンコーティングを行いフィルムを形成させた。このフィルムを250℃で90秒ベーキングして、82nmの厚さのフィルムを得た(193nmでのnは1.6608;193nmでのkは0.1310)。フィルムの500:1 DHFでの湿潤エッチング速度は12Å/分であった。フィルムのプラズマエッチング速度は、前述のフルオロカーボン・エッチングプロセスのエッチング・レシピを使用すると3127Å/分であった。
17.85gのポリマー溶液に、25.88gのPGMEA、0.076gの1%TMAN水溶液、及び0.04gの1N硝酸を加えて最終生成物を得た。前述したのと同一のGPCシステムによる分析では、ポリマーの分子量は、Mn=1112amu及びMw=1735amuであった。本溶液を濾過し、シリコンウエハー上にスピンコーティングを行い、フィルムを形成させた。このフィルムを250℃で90秒ベーキングして、84nmの厚さのフィルムを得た(193nmでのnは1.6665;193nmでのkは0.1460であった)。フィルムの500:1 DHFでの湿潤エッチング速度は10Å/分であった。フィルムのプラズマエッチング速度は、前述のフルオロカーボン・エッチングプロセスのエッチング・レシピを使用すると3114Å/分であった。
60gのエタノールと30gのPGMEAとの混合溶媒に、33.33gのTEOSモノマー、5.71gのVTEOSモノマー、及び2.40gのPTEOSモノマーを個別に加えた。攪拌しながら、1.13gの0.1N硝酸と18.92gの水との混合物を注ぎ込み、反応混合物を81℃で4時間加熱還流してから冷却した。反応混合物に8.84gのブタノールを加え、本混合物を室温で一晩攪拌した。前述したのと同一のGPCシステムによる分析では、得られたポリマーの分子量は、Mn=1121amu及びMw=1723amuであった。APTEOS−トリフラート原液を、4.89gの20%トリフルオロメタンスルホン酸水溶液(アルドリッチ社)と1.425gのAPTEOS(原液中22.6重量%APTEOS)から新たに調製した。
21.45gのポリマー溶液に、31.12gのPGMEA、0.092gの1%TMAN水溶液、0.049gの1N硝酸、及び0.0066gの上記APTEOS−トリフラート原液を加えて最終生成物を得た。前述したのと同一のGPCシステムによる分析では、ポリマーの分子量は、Mn=1165amu及びMw=1805amuであった。本溶液を濾過し、シリコンウエハー上にスピニングしてフィルムを形成させた。このフィルムを250℃で90秒ベーキングして、84nmの厚さのフィルムを得た(193nmでのnは1.6764;193nmでのkは0.1600であった)。フィルムの500:1 DHFでの湿潤エッチング速度は15Å/分であった。フィルムのプラズマエッチング速度は、前述のフルオロカーボン・エッチングプロセスのエッチング・レシピを使用すると3369Å/分であった。
21.45gのポリマー溶液に、31.12gのPGMEA、0.076gの1%TMAN水溶液、0.041gの1N硝酸、及び0.0132gの上記APTEOS−トリフラート原液を加えて最終生成物を得た。前述したのと同一のGPCシステムによる分析では、ポリマーの分子量は、Mn=1149amu及びMw=1784amuであった。本溶液を濾過し、シリコンウエハー上にスピンコーティングを行ってフィルムを形成させた。このフィルムを250℃で90秒ベーキングして、85nmの厚さのフィルムを得た(193nmでのnは1.6919;193nmでのkは0.1876であった)。フィルムの500:1 DHFでの湿潤エッチング速度は19Å/分であった。フィルムのプラズマエッチング速度は、前述のフルオロカーボン・エッチングプロセスのエッチング・レシピを使用すると3382Å/分であった。
パターン形成しようとする基板フィルムを、最初に有機基層(OUL)材料のフィルムによって被覆した。OULの付着は、代表的なフィルム付着法(最も一般的にはスピンコーティング法)を使用して行われる。次いで、被覆されたOULフィルムを200〜300℃の範囲の温度にベーキングした。OULの厚さは、存在する可能性のあるいかなるトポグラフィーも充填・平坦化するように選定した。一般には、OULの厚さは200〜300nmのオーダーである。三層パターニングは、基板トポグラフィーが存在してよい、あるいは存在しなくてよい、というアプリケーションにおいて使用することができる、という点に留意する必要がある。OUL材料の幾つかの基本的な特性は下記のとおりである:
− プラズマエッチング時の改良された限界寸法制御に対する炭素/酸素(C/O)組成比が大きい;
− ターゲット波長での吸収性(k>0.25);
− ターゲット波長での屈折率(n<1.7);
− エッチングによるパターニング後に線の崩壊が起こらないよう機械的に強く且つ剛性である;
− 酸化性または還元性のプラズマエッチング化学を使用して容易にエッチング及び除去される;
− 狭くて高いアスペクト比のフィーチャー(例えば、スロット、ホール、及びスペース)を有し、欠陥のない充填と平坦化をもたらす;
− 後続のフィルム付着プロセスの間に縮合物が取り除かれないという点で熱的に安定である。
− UVAS−A45(45nm)−193nmの入射光線に対する第1の最大反射率
− UVAS−A80(80nm)−193nmの入射光線に対する第2の最小反射率
UVASは、代表的なフィルム付着法(最も一般的にはスピンコーティング法)を使用してOULフィルム上に直接付着させる。UVASの厚さは、スピン速度を変えることで調節する。次いで、UVASフィルムを200〜250℃の温度にベーキングする。
105 有機平坦化層
125 シリコン系層
135 フォトレジスト
137 フォトレジスト
145 パターン
155 パターン
165 パターン
180 トレンチ・フィーチャー
300 反応器の配置
320 反応器
322 攪拌機
330 ポンプ
340 希釈容器
342 攪拌機
360 ポンプ
370 濾過ユニット
410 ポリマー層
420 UVASコーティング材料
430 ArFフォトレジスト
450 シリコン層
Claims (33)
- 三層アプリケーションにおいて使用するための組成物であって、該組成物が、マトリックスを有し、且つ、
ポリマー配合物、ここで、該配合物は、該ポリマーのマトリックスを形成する少なくとも1つのタイプのシリコン系部分、該ポリマーのマトリックスに結合した複数のビニル基、及び該ポリマーのマトリックスに結合した複数のフェニル基を含む;
少なくとも1種の縮合触媒;並びに、
少なくとも1種の溶媒;
を含むことを特徴とする、前記組成物。 - 前記少なくとも1つのタイプのシリコン系部分が、少なくとも1種の高比率無機化合物、少なくとも1種の吸収性化合物、少なくとも1種の接着促進剤、又はこれらの組み合わせを含む、請求項1に記載の組成物。
- 前記少なくとも1つのタイプのシリコン系部分が、少なくとも1種のアルコキシ部分を含む、請求項1に記載の組成物。
- 前記少なくとも1種のアルコキシ部分が、テトラエトキシシラン、フェニルトリエトキシシラン、ビニルトリエトキシシラン、又はこれらの組み合わせを含む、請求項3に記載の組成物。
- 前記ポリマー配合物が少なくとも30重量%のケイ素を含む、請求項1に記載の組成物。
- 前記ポリマー配合物が少なくとも40重量%のケイ素を含む、請求項5に記載の組成物。
- 前記複数のビニル基の少なくとも一部がビニルトリエトキシシランからもたらされる、請求項1に記載の組成物。
- 前記複数のフェニル基の少なくとも一部がフェニルトリエトキシシランからもたらされる、請求項1に記載の組成物。
- 少なくとも1種の追加的な接着促進剤をさらに含む、請求項1に記載の組成物。
- 少なくとも1種の追加的な吸収性化合物をさらに含む、請求項1に記載の組成物。
- 前記少なくとも1種の追加的な接着促進剤が塩基を含む、請求項9に記載の組成物。
- 前記少なくとも1種の接着促進剤が窒素を含む、請求項11に記載の組成物。
- 前記少なくとも1種の接着促進剤がリンを含む、請求項11に記載の組成物。
- 前記少なくとも1種の接着促進剤がアミン塩基を含む、請求項12に記載の組成物。
- 前記少なくとも1種の接着促進剤が、アンモニウム、ピリジン、アニリン、TMAH、CTAH、TBAH、APTEOS、又はこれらの組み合わせを含む、請求項14に記載の組成物。
- 前記少なくとも1種の接着促進剤が少なくとも1種のアミン塩を含む、請求項12に記載の組成物。
- 前記少なくとも1種のアミン塩が弱酸/強塩基または強酸/弱塩基を含む、請求項16に記載の組成物。
- 前記少なくとも1種の接着促進剤が中性化合物を含む、請求項11に記載の組成物。
- 前記少なくとも1種の縮合触媒が少なくとも1種のアミン塩を含む、請求項11に記載の組成物。
- 前記少なくとも1種のアミン塩がTMANを含む、請求項19に記載の組成物。
- 少なくとも1種のpH調整剤をさらに含む、請求項1に記載の組成物。
- 前記少なくとも1種のpH調整剤が酸を含む、請求項21に記載の組成物。
- 前記酸が硝酸を含む、請求項22に記載の組成物。
- 前記少なくとも1種の溶媒が、PGMA、エタノール、ブタノール、水、又はこれらの組み合わせを含む、請求項1に記載の組成物。
- 請求項1に記載の組成物から形成されるフィルム。
- 前記フィルムが犠牲フィルムである、請求項25に記載の組成物。
- 有機基層、前記有機基層に結合した請求項24に記載のフィルム、及び、前記フィルムに結合したフォトレジスト材料、を含む三層構造物。
- 三層パターニング・アプリケーションのための組成物を製造する方法であって、
ポリマー配合物を供給すること、ここで、該配合物は、該ポリマーのマトリックスを形成する少なくとも1つのタイプのシリコン系部分、該ポリマーのマトリックスに結合した複数のビニル基、及び該ポリマーのマトリックスに結合した複数のフェニル基を含む;
少なくとも1種の縮合触媒を供給すること;
少なくとも1種の溶媒を供給すること;
少なくとも1種のpH調整剤を供給すること;
前記ポリマー配合物と前記少なくとも1種の溶媒の一部とを反応器中で混合して、反応性混合物を生成させるること;並びに、
前記少なくとも1種のpH調整剤、前記少なくとも1種の縮合触媒、及び前記少なくとも1種の溶媒の残部を反応混合物中に加えて、組成物を得るること;
を含む、前記方法。 - 前記少なくとも1つのタイプのシリコン系部分が、少なくとも1種の高比率無機化合物、少なくとも1種の吸収性化合物、少なくとも1種の接着促進剤、又はこれらの組み合わせを含む、請求項28に記載の製造方法。
- 前記少なくとも1つのタイプのシリコン系部分が少なくとも1種のアルコキシ部分を含む、請求項28に記載の製造方法。
- 前記少なくとも1種のアルコキシ部分が、テトラエトキシシラン、フェニルトリエトキシシラン、ビニルトリエトキシシラン、又はこれらの組み合わせを含む、請求項30に記載の製造方法。
- 少なくとも1種の追加的な接着促進剤を供給すること;及び前記少なくとも1種の追加的な接着促進剤とポリマー配合物とを混合すること;をさらに含む、請求項28に記載の製造方法。
- 少なくとも1種の吸収性化合物を供給すること;及び前記少なくとも1種の吸収性化合物とポリマー配合物とを混合すること;をさらに含む、請求項28に記載の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012053253A (ja) * | 2010-09-01 | 2012-03-15 | Shin Etsu Chem Co Ltd | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
WO2013051558A1 (ja) * | 2011-10-06 | 2013-04-11 | 日産化学工業株式会社 | ケイ素含有euvレジスト下層膜形成組成物 |
JP2021531192A (ja) * | 2018-11-23 | 2021-11-18 | エルジー・ケム・リミテッド | 光学積層体 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8182978B2 (en) * | 2009-02-02 | 2012-05-22 | International Business Machines Corporation | Developable bottom antireflective coating compositions especially suitable for ion implant applications |
KR101764259B1 (ko) * | 2009-06-02 | 2017-08-03 | 닛산 가가쿠 고교 가부시키 가이샤 | 설파이드 결합을 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8889018B2 (en) | 2010-11-23 | 2014-11-18 | HGST Netherlands B.V. | Method for manufacturing a magnetic write pole using a multi-layered hard mask structure |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP6163770B2 (ja) * | 2012-03-07 | 2017-07-19 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
TW201344369A (zh) * | 2012-03-07 | 2013-11-01 | Jsr Corp | 光阻下層膜形成用組成物及圖型之形成方法 |
US8759220B1 (en) * | 2013-02-28 | 2014-06-24 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
US9847302B2 (en) * | 2013-08-23 | 2017-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer surface conditioning for stability in fab environment |
US9312191B2 (en) | 2014-08-14 | 2016-04-12 | Globalfoundries Inc. | Block patterning process for post fin |
WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
KR20180134867A (ko) * | 2016-03-30 | 2018-12-19 | 제이에스알 가부시끼가이샤 | 레지스트 프로세스용 막 형성 재료 및 패턴 형성 방법 |
US10410883B2 (en) * | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10254650B2 (en) | 2016-06-29 | 2019-04-09 | Honeywell International Inc. | Low temperature SC1 strippable oxysilane-containing coatings |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
WO2018230671A1 (ja) * | 2017-06-16 | 2018-12-20 | Jsr株式会社 | パターン形成方法及びeuvリソグラフィー用ケイ素含有膜形成組成物 |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
US10991547B2 (en) * | 2019-09-25 | 2021-04-27 | Applied Materials, Inc. | Method and device for a carrier proximity mask |
CN113561586B (zh) * | 2021-07-08 | 2023-03-31 | 清华大学深圳国际研究生院 | 一种层状吸波材料及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232356A (ja) * | 1988-07-21 | 1990-02-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH045658A (ja) * | 1990-04-23 | 1992-01-09 | Toray Dow Corning Silicone Co Ltd | 3層レジスト中間層用材料およびパターン形成方法 |
JP2004059737A (ja) * | 2002-07-29 | 2004-02-26 | Jsr Corp | 膜形成用ポリシロキサンの製造方法、膜形成用組成物、膜形成方法および膜 |
JP2004506797A (ja) * | 2000-08-21 | 2004-03-04 | ダウ グローバル テクノロジーズ インコーポレイティド | マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 |
WO2006093057A1 (ja) * | 2005-03-01 | 2006-09-08 | Jsr Corporation | レジスト下層膜用組成物およびその製造方法 |
WO2007066597A1 (ja) * | 2005-12-06 | 2007-06-14 | Nissan Chemical Industries, Ltd. | 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物 |
Family Cites Families (567)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270285A (en) | 1965-02-28 | 1993-12-14 | Dai Nippon Insatsu Kabushiki Kaisha | Sheet for heat transference |
US3615272A (en) | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
US3635529A (en) * | 1969-06-24 | 1972-01-18 | Walter R Nass | Motor vehicle wheel assembly |
US3784378A (en) * | 1971-10-18 | 1974-01-08 | Du Pont | Double-exposure method for producing reverse images in photopolymers |
JPS5125070B2 (ja) | 1972-07-11 | 1976-07-28 | ||
US3884702A (en) | 1972-12-14 | 1975-05-20 | Unitika Ltd | Photosensitive polyamide composition |
US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
US4191571A (en) * | 1974-04-26 | 1980-03-04 | Hitachi, Ltd. | Method of pattern forming in a photosensitive composition having a reciprocity law failing property |
US4053313A (en) | 1975-06-03 | 1977-10-11 | E. I. Du Pont De Nemours And Company | Process for image reproduction using multilayer photosensitive solvent processable elements |
US5624294A (en) | 1977-03-17 | 1997-04-29 | Applied Elastomerics, Inc. | Humdinger, gel spinner |
US5508334A (en) | 1977-03-17 | 1996-04-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions and articles |
US5655947A (en) | 1977-03-17 | 1997-08-12 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5334646B1 (en) | 1977-03-17 | 1998-09-08 | Applied Elastomerics Inc | Thermoplastic elastomer gelatinous articles |
US5262468A (en) | 1977-03-17 | 1993-11-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions |
US5336708A (en) | 1977-03-17 | 1994-08-09 | Applied Elastomerics, Inc. | Gelatinous elastomer articles |
US5153254A (en) | 1977-03-17 | 1992-10-06 | Applied Elastomerics, Inc. | Reusable lint remover |
US5324222A (en) | 1977-03-17 | 1994-06-28 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic airfoils |
US5239723A (en) | 1977-03-17 | 1993-08-31 | Applied Elastomerics, Inc. | Gelatinous elastomer swabs |
GB1604414A (en) | 1977-07-27 | 1981-12-09 | Raychem Ltd | Silicone resin |
JPS55165922A (en) | 1979-06-14 | 1980-12-24 | Daicel Chem Ind Ltd | Production of thermosetting organopolysiloxane |
US4299938A (en) | 1979-06-19 | 1981-11-10 | Ciba-Geigy Corporation | Photopolymerizable and thermally polymerizable compositions |
US4349609A (en) | 1979-06-21 | 1982-09-14 | Fujitsu Limited | Electronic device having multilayer wiring structure |
JPS5850417B2 (ja) | 1979-07-31 | 1983-11-10 | 富士通株式会社 | 半導体装置の製造方法 |
US4257826A (en) * | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
US4290896A (en) | 1980-05-27 | 1981-09-22 | Dow Corning Corporation | Dewatering fine coal slurries using organopolysiloxanes |
US4935583A (en) | 1980-05-30 | 1990-06-19 | Kyle James C | Insulated conductor with ceramic-connected elements |
US4483107A (en) | 1980-06-17 | 1984-11-20 | Konishiroku Photo Industry Co., Ltd. | Polishing method for electrophotographic photoconductive member |
JPS5760330A (en) | 1980-09-27 | 1982-04-12 | Fujitsu Ltd | Resin composition |
US4399255A (en) | 1980-12-22 | 1983-08-16 | Avtex Fibers Inc. | Alloy rayon fibers of regenerated cellulose and copolymeric acrylic acid salts |
US4515828A (en) | 1981-01-02 | 1985-05-07 | International Business Machines Corporation | Planarization method |
US4423135A (en) | 1981-01-28 | 1983-12-27 | E. I. Du Pont De Nemours & Co. | Preparation of photosensitive block copolymer elements |
US4413052A (en) | 1981-02-04 | 1983-11-01 | Ciba-Geigy Corporation | Photopolymerization process employing compounds containing acryloyl group and anthryl group |
US4419437A (en) | 1981-02-11 | 1983-12-06 | Eastman Kodak Company | Image-forming compositions and elements containing ionic polyester dispersing agents |
US4312970A (en) * | 1981-02-20 | 1982-01-26 | Dow Corning Corporation | Silazane polymers from {R'3 Si}2 NH and organochlorosilanes |
DE3278567D1 (en) * | 1981-10-03 | 1988-07-07 | Japan Synthetic Rubber Co Ltd | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
JPS58171416A (ja) | 1982-04-02 | 1983-10-08 | Hitachi Ltd | 耐熱性重合体 |
US5670295A (en) | 1982-07-30 | 1997-09-23 | Namba; Kenryo | Optical recording medium |
US6194121B1 (en) * | 1982-09-25 | 2001-02-27 | Tdk Corp. | Optical recording medium |
US4822718A (en) | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
JPH0612452B2 (ja) | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
US4434127A (en) * | 1982-12-09 | 1984-02-28 | Dow Corning Corporation | Heat curable polydiorganosiloxane compositions having enhanced release upon cure |
JPS59109565A (ja) | 1982-12-16 | 1984-06-25 | Fujitsu Ltd | コ−テイング樹脂溶液およびその製造方法 |
CA1255952A (en) | 1983-03-04 | 1989-06-20 | Akihiro Furuta | Positive type photoresist composition |
KR890003903B1 (ko) * | 1983-06-29 | 1989-10-10 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
US4430153A (en) * | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
US4617252A (en) | 1983-07-01 | 1986-10-14 | Philip A. Hunt Chemical Corporation | Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes |
DE3344202A1 (de) | 1983-12-07 | 1985-06-20 | Merck Patent Gmbh, 6100 Darmstadt | Positiv-fotoresistzusammensetzungen |
GB8333901D0 (en) | 1983-12-20 | 1984-02-01 | Minnesota Mining & Mfg | Radiationsensitive compositions |
GB8401016D0 (en) | 1984-01-14 | 1984-02-15 | Hagen Perennatorwerk | Organopolysiloxane compositions |
JPS60177029A (ja) | 1984-02-21 | 1985-09-11 | Toray Silicone Co Ltd | オルガノポリシロキサン組成物の硬化方法 |
US4831188A (en) | 1984-02-29 | 1989-05-16 | Bowling Green State University | Perester photoinitiators |
US4702990A (en) | 1984-05-14 | 1987-10-27 | Nippon Telegraph And Telephone Corporation | Photosensitive resin composition and process for forming photo-resist pattern using the same |
EP0163538B1 (en) | 1984-05-30 | 1989-11-23 | Fujitsu Limited | Pattern-forming material and its production and use |
US4763966A (en) | 1984-07-16 | 1988-08-16 | Fuji Photo Film Co., Ltd. | Infrared absorbent |
US5674648A (en) | 1984-08-06 | 1997-10-07 | Brewer Science, Inc. | Anti-reflective coating |
US4657965A (en) | 1984-10-22 | 1987-04-14 | Toshiba Silicone Co., Ltd. | Silicone elastomer composition |
US4670299A (en) | 1984-11-01 | 1987-06-02 | Fujitsu Limited | Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board |
US4620986A (en) | 1984-11-09 | 1986-11-04 | Intel Corporation | MOS rear end processing |
US4587138A (en) | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
IT1177373B (it) | 1984-12-06 | 1987-08-26 | Bioresearch Spa | Sali della 5'-metiltio-5'-deossiadenosina con acidi solfonici a lunga catena alchilica |
FR2579552B1 (fr) | 1985-03-27 | 1990-06-08 | Honda Motor Co Ltd | Dispositif de direction des roues avant et arriere pour vehicule |
US4745169A (en) | 1985-05-10 | 1988-05-17 | Hitachi, Ltd. | Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer |
EP0204963B1 (en) | 1985-05-10 | 1993-01-13 | Hitachi, Ltd. | Use of Alkali-Soluble Polyorganosilsesquioxane Polymers in a resist for preparing electronics parts. |
US4663414A (en) | 1985-05-14 | 1987-05-05 | Stauffer Chemical Company | Phospho-boro-silanol interlayer dielectric films and preparation |
US4595599A (en) | 1985-06-21 | 1986-06-17 | Advanced Chemical Technologies Company | Luminescent silane |
US4816049A (en) * | 1985-07-12 | 1989-03-28 | Hoya Corporation | Process of surface treating laser glass |
US5034189A (en) | 1985-08-27 | 1991-07-23 | The Regents Of The University Of California | Fluorescent probe for rapid measurement of analyte concentration |
DE3684745D1 (de) | 1985-08-29 | 1992-05-14 | Du Pont | Photopolymerisierbare zusammensetzung mit dizyklopentylacrylat oder methacrylat enthaltenden acrylcopolymeren. |
US4786569A (en) | 1985-09-04 | 1988-11-22 | Ciba-Geigy Corporation | Adhesively bonded photostructurable polyimide film |
US4923638A (en) | 1985-09-30 | 1990-05-08 | Fuji Photo Film Co., Ltd. | Near infrared absorbing composition |
US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
ES2060579T3 (es) | 1985-12-09 | 1994-12-01 | Nippon Paint Co Ltd | Material de impresion a base de resina fotosensible. |
US4676867A (en) | 1986-06-06 | 1987-06-30 | Rockwell International Corporation | Planarization process for double metal MOS using spin-on glass as a sacrificial layer |
EP0255303B1 (en) | 1986-07-25 | 1989-10-11 | Oki Electric Industry Company, Limited | Negative resist material, method for its manufacture and method for using it |
JPS63139303A (ja) | 1986-08-05 | 1988-06-11 | Fuji Photo Film Co Ltd | 赤外線吸収性組成物 |
US4806504A (en) * | 1986-09-11 | 1989-02-21 | Fairchild Semiconductor Corporation | Planarization method |
US4950583A (en) | 1986-09-17 | 1990-08-21 | Brewer Science Inc. | Adhesion promoting product and process for treating an integrated circuit substrate therewith |
US4863827A (en) | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
US6033283A (en) | 1986-10-21 | 2000-03-07 | Applied Elastomerics, Inc. | Humdinger, string spinning toy |
DE3635821A1 (de) | 1986-10-22 | 1988-04-28 | Bayer Ag | Mikrokapseln mit verbesserten waenden |
US4898907A (en) * | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US4822697A (en) | 1986-12-03 | 1989-04-18 | Dow Corning Corporation | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
US4756977A (en) | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4808653A (en) * | 1986-12-04 | 1989-02-28 | Dow Corning Corporation | Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors |
US4753855A (en) | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
US5008320A (en) | 1986-12-04 | 1991-04-16 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
JPH0819381B2 (ja) * | 1987-01-06 | 1996-02-28 | 日本合成ゴム株式会社 | コーティング用組成物 |
US5328976A (en) | 1987-01-09 | 1994-07-12 | Allied-Signal Inc. | Carbon-containing black glass monoliths |
US5077085A (en) | 1987-03-06 | 1991-12-31 | Schnur Joel M | High resolution metal patterning of ultra-thin films on solid substrates |
US5389496A (en) * | 1987-03-06 | 1995-02-14 | Rohm And Haas Company | Processes and compositions for electroless metallization |
US5079600A (en) | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
DE3810247A1 (de) | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | Lichtempfindliche beschichtungsmasse |
US4855199A (en) | 1987-04-03 | 1989-08-08 | General Electric Company | Photopatterned product of silicone polyamic acid on a transparent substrate |
DE3719844A1 (de) | 1987-06-13 | 1988-12-29 | Basf Ag | Durch photopolymersisation vernetzbares gemisch |
US4839274A (en) | 1987-06-30 | 1989-06-13 | Eastman Kodak Company | Novel polymethine dyes and UV absorbers containing a triarylborylisocyano group and imaging compositions containing these dyes |
JP2609256B2 (ja) * | 1987-07-21 | 1997-05-14 | 鐘淵化学工業株式会社 | 硬化性組成物 |
EP0301641A1 (en) | 1987-07-23 | 1989-02-01 | Koninklijke Philips Electronics N.V. | Master disc and method of manufacturing a matrix |
US4973510A (en) | 1987-09-02 | 1990-11-27 | Teijin Limited | Coated sheet material and process for producing same |
DE3735852A1 (de) | 1987-10-23 | 1989-05-03 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
US5049414A (en) | 1987-10-24 | 1991-09-17 | Ito Optical Industrial Co., Ltd. | Antireflection solution for optical parts and method for antireflection treatment using said solution |
US4925772A (en) | 1987-11-26 | 1990-05-15 | Siemens Aktiengesellschaft | Anti-radiation covering for electronic components |
US5272026A (en) | 1987-12-18 | 1993-12-21 | Ucb S.A. | Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article |
GB8729510D0 (en) | 1987-12-18 | 1988-02-03 | Ucb Sa | Photosensitive compositions containing phenolic resins & diazoquinone compounds |
US4849296A (en) | 1987-12-28 | 1989-07-18 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia |
JPH01185367A (ja) * | 1988-01-18 | 1989-07-24 | Toshiba Silicone Co Ltd | 表面処理されたポリメチルシルセスキオキサン粉末の製造方法 |
DE3802496C3 (de) | 1988-01-28 | 1998-07-09 | Messer Griesheim Gmbh | Absorptionsmasse, bestehend aus einer mit Kupfersulfat belegten Trägersubstanz |
US6040251A (en) | 1988-03-14 | 2000-03-21 | Nextec Applications Inc. | Garments of barrier webs |
US5194364A (en) * | 1988-03-16 | 1993-03-16 | Fujitsu Limited | Process for formation of resist patterns |
US5391463A (en) * | 1988-04-14 | 1995-02-21 | The United States Of America As Represented By The Secretary Of The Navy | Surface modification to create regions resistant to adsorption of biomolecules |
US4942083A (en) | 1988-05-16 | 1990-07-17 | Smith Novis W Jr | Abrasion resistant coatings |
DE58906867D1 (de) | 1988-05-31 | 1994-03-17 | Ciba Geigy | Wässrige Dispersion von 2-(2'-Hydroxyphenyl-)benzotriazolen. |
US4921778A (en) | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
US4943511A (en) | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
US5403680A (en) | 1988-08-30 | 1995-04-04 | Osaka Gas Company, Ltd. | Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers |
US5173368A (en) | 1988-09-14 | 1992-12-22 | Pilkington Visioncare Holdings, Inc. | Solution-applied antireflective coatings |
US4954414A (en) | 1988-11-08 | 1990-09-04 | The Mead Corporation | Photosensitive composition containing a transition metal coordination complex cation and a borate anion and photosensitive materials employing the same |
US5199979A (en) | 1988-11-25 | 1993-04-06 | Ppg Industries, Inc. | UV resistant, abrasion resistant coatings |
US4981530A (en) * | 1988-11-28 | 1991-01-01 | International Business Machines Corporation | Planarizing ladder-type silsesquioxane polymer insulation layer |
US5455145A (en) | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
US5747223A (en) | 1988-12-30 | 1998-05-05 | International Business Machines Corporation | Composition for photoimaging |
US5439766A (en) | 1988-12-30 | 1995-08-08 | International Business Machines Corporation | Composition for photo imaging |
US6180317B1 (en) * | 1988-12-30 | 2001-01-30 | International Business Machines Corporation | Composition for photoimaging |
US4940651A (en) | 1988-12-30 | 1990-07-10 | International Business Machines Corporation | Method for patterning cationic curable photoresist |
US5026624A (en) | 1989-03-03 | 1991-06-25 | International Business Machines Corporation | Composition for photo imaging |
US5300402A (en) | 1988-12-30 | 1994-04-05 | International Business Machines Corporation | Composition for photo imaging |
US5278010A (en) * | 1989-03-03 | 1994-01-11 | International Business Machines Corporation | Composition for photo imaging |
US6210862B1 (en) | 1989-03-03 | 2001-04-03 | International Business Machines Corporation | Composition for photoimaging |
US4885262A (en) | 1989-03-08 | 1989-12-05 | Intel Corporation | Chemical modification of spin-on glass for improved performance in IC fabrication |
EP0388343B1 (en) | 1989-03-14 | 1996-07-17 | International Business Machines Corporation | Chemically amplified photoresist |
US5009810A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5009809A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5317044A (en) | 1989-05-16 | 1994-05-31 | J. M. Huber Corporation | Endothermic blowing agents for surface migration of components in foamed products, compositions and applications |
US5250224A (en) | 1989-05-16 | 1993-10-05 | J. M. Huber Corporation | Foamed products containing endothermic blowing agents and processes |
US5106534A (en) | 1989-05-16 | 1992-04-21 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5302455A (en) | 1989-05-16 | 1994-04-12 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5137655A (en) | 1989-05-16 | 1992-08-11 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5252618A (en) | 1989-05-16 | 1993-10-12 | J. M. Huber Corporation | Endothermic blowing agents for strengthening weld lines in molded thermoplastic resins and products |
US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
US5102695A (en) | 1989-07-07 | 1992-04-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US5013608A (en) | 1989-07-07 | 1991-05-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US5045592A (en) | 1989-07-28 | 1991-09-03 | Dow Corning Corporation | Metastable silane hydrolyzates |
US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5112728A (en) | 1989-10-05 | 1992-05-12 | Konica Corporation | Silver halide photographic light-sensitive material |
US5059512A (en) | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
DE69032077T2 (de) | 1989-10-17 | 1998-12-03 | Shipley Co., Inc., Newton, Mass. | Fotoresist für nahes U.V. |
US5212046A (en) | 1989-10-17 | 1993-05-18 | Shipley Company Inc. | Near UV photoresist |
CA2027031A1 (en) | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
US5252340A (en) | 1989-12-14 | 1993-10-12 | Isolyser Company, Inc. | Method of producing an absorbent composition |
US4973526A (en) | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5043789A (en) | 1990-03-15 | 1991-08-27 | International Business Machines Corporation | Planarizing silsesquioxane copolymer coating |
EP0449263B1 (en) | 1990-03-28 | 1996-06-12 | Japan Synthetic Rubber Co., Ltd. | Polysiloxane-composite polymer particles |
US5104692A (en) | 1990-04-20 | 1992-04-14 | Pilkington Visioncare Holdings, Inc. | Two-layer antireflective coating applied in solution |
US5055372A (en) | 1990-04-23 | 1991-10-08 | The Mead Corporation | Photohardenable composition containing borate salts and ketone initiators |
US5760117A (en) | 1990-05-21 | 1998-06-02 | Applied Elastomerics, Inc. | Gelatinous composition and articles |
US5868597A (en) * | 1990-05-21 | 1999-02-09 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5884639A (en) | 1996-03-08 | 1999-03-23 | Applied Elastomerics, Inc. | Crystal gels with improved properties |
US6333374B1 (en) | 1990-05-21 | 2001-12-25 | Applied Elastomerics, Inc. | Fluffy, strong, solid elastic gels, articles and method of making same |
US6117176A (en) | 1993-11-15 | 2000-09-12 | Applied Elastomerics, Inc. | Elastic-crystal gel |
US6050871A (en) | 1994-04-19 | 2000-04-18 | Applied Elastomerics, Inc. | Crystal gel airfoils with improved tear resistance and gel airfoils with profiles capable of exhibiting time delay recovery from deformation |
US6148830A (en) | 1994-04-19 | 2000-11-21 | Applied Elastomerics, Inc. | Tear resistant, multiblock copolymer gels and articles |
US6552109B1 (en) | 1994-04-19 | 2003-04-22 | Applied Elastomerics, Inc. | Gelatinous elastomer compositions and articles |
US5962572A (en) | 1994-04-19 | 1999-10-05 | Applied Elastomerics, Inc. | Oriented gel and oriented gel articles |
EP0458651B1 (en) | 1990-05-25 | 1994-03-09 | Matsushita Electric Industrial Co., Ltd. | Photosensitive materials comprising organic photoconductive substances in a binder polymer having aromatic rings, OH groups and bromine joined at the aromatic ring or rings |
US5262201A (en) | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5059448A (en) | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
JP3064337B2 (ja) | 1990-06-21 | 2000-07-12 | オリンパス光学工業株式会社 | 実像式変倍ファインダー光学系 |
US5126289A (en) | 1990-07-20 | 1992-06-30 | At&T Bell Laboratories | Semiconductor lithography methods using an arc of organic material |
US5100503A (en) | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US5302198A (en) | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
US5527872A (en) | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5472488A (en) | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5152834A (en) | 1990-09-14 | 1992-10-06 | Ncr Corporation | Spin-on glass composition |
US5140396A (en) | 1990-10-10 | 1992-08-18 | Polaroid Corporation | Filter and solid state imager incorporating this filter |
US5059500A (en) | 1990-10-10 | 1991-10-22 | Polaroid Corporation | Process for forming a color filter |
EP0482821B1 (en) | 1990-10-16 | 1998-09-30 | Mitsui Chemicals, Inc. | Use of a highly light-transmitting dust protective film, process for preparation thereof and dust protective member |
US5055376A (en) | 1990-11-13 | 1991-10-08 | Eastman Kodak Company | Curable compositions containing onium salt photoinitiators which have a chromophore linked to the onium salt moiety through the 3-position and method of use |
JP2712817B2 (ja) * | 1990-11-15 | 1998-02-16 | 信越化学工業株式会社 | ポリオルガノシロキサン樹脂の製造方法 |
US5063267A (en) | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
EP0490819B1 (de) * | 1990-12-13 | 1995-09-13 | Ciba-Geigy Ag | Wässrige Dispersion schwerlöslicher UV-Absorber |
US5662109A (en) | 1990-12-14 | 1997-09-02 | Hutson; William H. | Method and system for multi-dimensional imaging and analysis for early detection of diseased tissue |
US5256510A (en) | 1990-12-21 | 1993-10-26 | Eastman Kodak Company | Photoelectrographic imaging with near-infrared sensitizing dyes |
US5219788A (en) | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US5520855A (en) | 1991-03-20 | 1996-05-28 | Kabushiki Kaisha Toshiba | Coating solution composition for forming glass gel thin film, color glass gel filter, and display device using the same |
US5648201A (en) | 1991-04-25 | 1997-07-15 | The United Sates Of America As Represented By The Secretary Of The Navy | Efficient chemistry for selective modification and metallization of substrates |
JPH05202483A (ja) * | 1991-04-25 | 1993-08-10 | Shipley Co Inc | 無電解金属化方法と組成物 |
US5166093A (en) | 1991-07-31 | 1992-11-24 | Micron Technology, Inc. | Method to reduce the reflectivity of a semi-conductor metallic surface |
DE4132697A1 (de) | 1991-10-01 | 1993-04-08 | Wacker Chemie Gmbh | Verfahren zur herstellung von organopolysiloxanharz |
US5418136A (en) | 1991-10-01 | 1995-05-23 | Biostar, Inc. | Devices for detection of an analyte based upon light interference |
US5212218A (en) | 1991-10-15 | 1993-05-18 | A. B. Chance Company | Hydrophobic, erodiable synthetic resin composition for electrical insulators |
JP3162441B2 (ja) | 1991-10-28 | 2001-04-25 | 三菱化学株式会社 | 高剛性プロピレン共重合体組成物 |
US6472128B2 (en) | 1996-04-30 | 2002-10-29 | Shipley Company, L.L.C. | Antihalation compositions |
US6528235B2 (en) | 1991-11-15 | 2003-03-04 | Shipley Company, L.L.C. | Antihalation compositions |
US6165697A (en) | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US6773864B1 (en) | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
KR0151545B1 (ko) | 1992-02-05 | 1998-10-01 | 마에다 가쓰노스케 | 다층 코팅품 |
JP2694097B2 (ja) * | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
AU666011B2 (en) | 1992-04-09 | 1996-01-25 | Francesco Di Virgilio | Method for inducing the acrosome reaction in human and animal spermatozoa |
US5457081A (en) | 1992-05-15 | 1995-10-10 | Dai Nippon Printing Co., Ltd. | Thermal transfer image receiving sheet |
JP2753921B2 (ja) | 1992-06-04 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
JP3252446B2 (ja) | 1992-06-25 | 2002-02-04 | 大同特殊鋼株式会社 | 熱間静水圧加圧成形用のカプセルおよび熱間静水圧加圧成形方法 |
US5576247A (en) | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
JPH06108097A (ja) * | 1992-08-07 | 1994-04-19 | Dr Ok Wack Chem Gmbh | 洗浄剤 |
US6794440B2 (en) | 1994-04-19 | 2004-09-21 | Applied Elastomerics, Inc. | Tear resistant gelatinous elastomer compositions and articles for use as fishing bait |
US6867253B1 (en) | 1994-04-19 | 2005-03-15 | Applied Elastomerics, Inc. | Tear resistant, crystalline midblock copolymer gels and articles |
US6909220B2 (en) | 1994-04-19 | 2005-06-21 | Applied Elastomerics, Inc. | High strain tear resistant gels and gel composites for use as artificial muscle actuators |
US6420475B1 (en) | 1994-04-19 | 2002-07-16 | Applied Elastomerics, Inc. | Tear resistant elastic crystal gels gel composites and their uses |
US6627275B1 (en) | 1994-04-19 | 2003-09-30 | Applied Elastomerics, Incorporated | Tear resistant elastic crystal gels suitable for inflatable restraint cushions and other uses |
US6324703B1 (en) | 1994-04-19 | 2001-12-04 | Applied Elastomerics, Inc. | Strong, soft, tear resistant insulating compositions and composites for extreme cold weather use |
JPH06333803A (ja) * | 1992-09-18 | 1994-12-02 | Sharp Corp | 投影型露光装置用フィルター |
JP2869443B2 (ja) * | 1992-09-24 | 1999-03-10 | 関西ペイント株式会社 | 上塗り塗料組成物 |
US5432007A (en) | 1992-10-06 | 1995-07-11 | Shizu Naito | Solvent-free organosiloxane composition and its use |
US5873931A (en) | 1992-10-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
JPH06140396A (ja) * | 1992-10-23 | 1994-05-20 | Yamaha Corp | 半導体装置とその製法 |
US5384357A (en) * | 1992-11-02 | 1995-01-24 | General Electric Company | Infrared radiation curable organopolysiloxane compositions |
US5719249A (en) * | 1993-11-29 | 1998-02-17 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Reactive silicon group-containing polyoxyalkylene-polysiloxane copolymer |
US5395734A (en) | 1992-11-30 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Shoot and run printing materials |
DE4241727A1 (de) | 1992-12-10 | 1994-06-16 | Wacker Chemie Gmbh | In Wasser selbstdispergierende, Organopolysiloxan anhaltende Zusammensetzungen |
US5449712A (en) | 1993-01-13 | 1995-09-12 | Thoro System Products, Inc. | Organosilicon emulsions for rendering porous substrates water repellent |
US5414069A (en) | 1993-02-01 | 1995-05-09 | Polaroid Corporation | Electroluminescent polymers, processes for their use, and electroluminescent devices containing these polymers |
US5302849A (en) | 1993-03-01 | 1994-04-12 | Motorola, Inc. | Plastic and grid array semiconductor device and method for making the same |
US5512418A (en) | 1993-03-10 | 1996-04-30 | E. I. Du Pont De Nemours And Company | Infra-red sensitive aqueous wash-off photoimaging element |
US5328975A (en) | 1993-04-02 | 1994-07-12 | Ppg Industries, Inc. | Ultraviolet radiation absorbing coating |
JP3007766B2 (ja) | 1993-04-19 | 2000-02-07 | 松下精工株式会社 | 斜流ファン |
JP3152544B2 (ja) | 1993-06-24 | 2001-04-03 | シャープ株式会社 | スキャナ |
FR2704766B1 (fr) | 1993-05-06 | 1995-07-28 | Salomon Sa | Dispositif interface entre un ski et des éléments de fixation. |
US5576359A (en) | 1993-07-20 | 1996-11-19 | Wako Pure Chemical Industries, Ltd. | Deep ultraviolet absorbent composition |
US5498748A (en) * | 1993-07-20 | 1996-03-12 | Wako Pure Chemical Industries, Ltd. | Anthracene derivatives |
JP3200257B2 (ja) | 1993-09-13 | 2001-08-20 | キヤノン株式会社 | 画像復号装置 |
DE4331162A1 (de) | 1993-09-14 | 1995-03-16 | Bayer Ag | Verfahren zur Herstellung von Cyaninfarbstoffen |
US5467626A (en) | 1993-10-01 | 1995-11-21 | The Boeing Company | Integral forming die system for superplastic metal forming |
US5382615A (en) | 1993-10-01 | 1995-01-17 | Eastman Chemical Company | Modified polyethylene based hot-melt adhesives for use in packaging |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
DE4338360A1 (de) | 1993-11-10 | 1995-05-11 | Inst Neue Mat Gemein Gmbh | Verfahren zur Herstellung von funktionellen glasartigen Schichten |
JP3197135B2 (ja) | 1994-02-02 | 2001-08-13 | ポップリベット・ファスナー株式会社 | スタッド固定具 |
CN1125481A (zh) | 1994-03-11 | 1996-06-26 | 川崎制铁株式会社 | 评价用于形成绝缘膜的硅氧烷的方法、形成绝缘膜的涂布液及其制备方法、半导体器件用绝缘膜成型方法以及采用绝缘膜成膜法制备半导体器件的方法 |
DE69511141T2 (de) | 1994-03-28 | 2000-04-20 | Wako Pure Chem Ind Ltd | Resistzusammensetzung für tiefe Ultraviolettbelichtung |
US6161555A (en) | 1994-04-19 | 2000-12-19 | Applied Elastomerics, Inc. | Crystal gels useful as dental floss with improved high tear, high tensile, and resistance to high stress rupture properties |
US5759625A (en) | 1994-06-03 | 1998-06-02 | E. I. Du Pont De Nemours And Company | Fluoropolymer protectant layer for high temperature superconductor film and photo-definition thereof |
US5494858A (en) | 1994-06-07 | 1996-02-27 | Texas Instruments Incorporated | Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications |
US5468591A (en) | 1994-06-14 | 1995-11-21 | Eastman Kodak Company | Barrier layer for laser ablative imaging |
JP3209476B2 (ja) | 1994-06-17 | 2001-09-17 | フジコピアン株式会社 | ファブリックインクリボン |
JP3028852B2 (ja) | 1994-06-24 | 2000-04-04 | ロシュ ダイアグノスティックス コーポレーション | ヒストリチクス菌から得られるコラゲナーゼおよび2つの他のプロテアーゼの精製混合物 |
FR2721720B1 (fr) | 1994-06-27 | 1996-09-06 | Essilor Int | Lentille ophtalmique en verre organique à intercouche anti-chocs et son procédé de fabrication. |
US20020034630A1 (en) | 1994-06-27 | 2002-03-21 | Jean-Paul Cano | Ophthalmic lens made of organic glass with a shockproof intermediate layer, and method for making same |
US6000339A (en) | 1994-06-30 | 1999-12-14 | Hitachi Chemical Company, Ltd. | Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device |
US5910021A (en) * | 1994-07-04 | 1999-06-08 | Yamaha Corporation | Manufacture of semiconductor device with fine pattens |
US5729563A (en) | 1994-07-07 | 1998-03-17 | Hewlett-Packard Company | Method and apparatus for optically and thermally isolating surface emitting laser diodes |
US5976666A (en) | 1994-08-29 | 1999-11-02 | Sri International | Electromagnetic radiation absorbing devices and associated methods of manufacture and use |
US5498468A (en) * | 1994-09-23 | 1996-03-12 | Kimberly-Clark Corporation | Fabrics composed of ribbon-like fibrous material and method to make the same |
GB2294262B (en) | 1994-10-20 | 1998-07-08 | Evc Tech Ag | Single stage fixed bed oxychlorination of ethylene |
US5527562A (en) | 1994-10-21 | 1996-06-18 | Aluminum Company Of America | Siloxane coatings for aluminum reflectors |
US5449639A (en) | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
KR0129950B1 (ko) * | 1994-11-30 | 1998-04-03 | 김광호 | 반사방지막 조성물 |
FR2729307B1 (fr) | 1995-01-18 | 1997-04-18 | Seppic Sa | Utilisation d'esters d'acides gras ethoxyles comme composants auto-emulsionnables notamment utiles pour la preparation de produits de traitement phytosanitaires ou de medicaments a usage veterinaire ou humain |
US5679128A (en) | 1995-01-31 | 1997-10-21 | Latting; John Alvis | Dry-bonded nonionic adjuvants |
US5964917A (en) | 1995-01-31 | 1999-10-12 | Latting; John Alvis | Free-flowing fertilizer compositions |
EP0727711A3 (en) | 1995-02-17 | 1997-04-09 | Ocg Microelectronic Materials | Photoresist compositions containing supercritical fluid fractionated polymeric resin binders |
US5738976A (en) * | 1995-03-16 | 1998-04-14 | Shin-Etsu Chemical Co., Ltd. | Photo-curable organopolysiloxane composition and a method for producing a (meth) acryloyloxyl group-containing organopolysiloxane used therein |
JP3045628U (ja) | 1995-03-16 | 1998-02-13 | 慶治郎 尾形 | 靴底模様の模様駒及び、模様構成 |
US5580819A (en) | 1995-03-22 | 1996-12-03 | Ppg Industries, Inc. | Coating composition, process for producing antireflective coatings, and coated articles |
GB9508031D0 (en) | 1995-04-20 | 1995-06-07 | Minnesota Mining & Mfg | UV-absorbing media bleachable by IR-radiation |
US5935758A (en) | 1995-04-20 | 1999-08-10 | Imation Corp. | Laser induced film transfer system |
GB9617416D0 (en) | 1996-08-20 | 1996-10-02 | Minnesota Mining & Mfg | Thermal bleaching of infrared dyes |
US5945249A (en) * | 1995-04-20 | 1999-08-31 | Imation Corp. | Laser absorbable photobleachable compositions |
US6103779A (en) | 1995-04-26 | 2000-08-15 | Reinforced Polmers, Inc. | Method of preparing molding compositions with fiber reinforcement and products obtained therefrom |
US5747553A (en) | 1995-04-26 | 1998-05-05 | Reinforced Polymer Inc. | Low pressure acrylic molding composition with fiber reinforcement |
US6150250A (en) | 1995-07-05 | 2000-11-21 | Yamaha Corporation | Conductive layer forming method using etching mask with direction <200> |
JP3512911B2 (ja) | 1995-07-11 | 2004-03-31 | 富士写真フイルム株式会社 | 紫外線吸収剤前駆体化合物、それを含有する感光性樹脂組成物及び画像形成方法 |
JP3824334B2 (ja) | 1995-08-07 | 2006-09-20 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液及び被膜形成方法 |
US5693691A (en) | 1995-08-21 | 1997-12-02 | Brewer Science, Inc. | Thermosetting anti-reflective coatings compositions |
US6770726B1 (en) * | 1995-09-12 | 2004-08-03 | Gelest, Inc. | β-substituted organosilsesquioxane polymers |
WO1997010282A1 (en) * | 1995-09-12 | 1997-03-20 | Gelest, Inc. | Beta-substituted organosilsesquioxanes and use thereof |
US5583195A (en) | 1995-09-29 | 1996-12-10 | General Electric Company | Photocurable epoxy silicones functionalized with fluorescent or photosensitizing marker dyes |
JPH09120157A (ja) | 1995-10-25 | 1997-05-06 | Fuji Photo Film Co Ltd | 湿し水不要感光性平版印刷版 |
US5663286A (en) | 1995-11-09 | 1997-09-02 | H.B. Fuller Licensing And Financing, Inc. | Nonwoven web comprising water soluble polyamides and articles constructed therefrom |
US5672243A (en) | 1995-11-28 | 1997-09-30 | Mosel Vitelic, Inc. | Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide |
TW376408B (en) | 1995-12-01 | 1999-12-11 | Nissan Chemical Ind Ltd | Coating film having water repellency and low refractive index |
JP3930591B2 (ja) | 1995-12-22 | 2007-06-13 | 東陶機器株式会社 | 光触媒性親水性コーティング組成物、親水性被膜の形成方法および被覆物品 |
JP3026716U (ja) | 1996-01-11 | 1996-07-23 | エストリン株式会社 | 植物のランナー用誘引具 |
US5629437A (en) | 1996-01-30 | 1997-05-13 | Huls America Inc. | Preparation and use of alkyleneoxysilane compositions |
AU715653B2 (en) | 1996-02-13 | 2000-02-10 | Sola International Inc. | Color-neutral UV blocking coating for plastic lens |
US5756257A (en) | 1996-02-14 | 1998-05-26 | Imation Corp. | Color proofing article incorporating novel antihalation dye |
JP3436843B2 (ja) | 1996-04-25 | 2003-08-18 | 東京応化工業株式会社 | リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料 |
US6291586B2 (en) | 1996-05-03 | 2001-09-18 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyurethanes and polyureas |
US5994431A (en) | 1996-05-03 | 1999-11-30 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyolefins |
JPH09306954A (ja) | 1996-05-20 | 1997-11-28 | Hitachi Ltd | 半導体装置及びその実装方法並びに実装構造体 |
TW354392B (en) | 1996-07-03 | 1999-03-11 | Du Pont | Photomask blanks |
TW515926B (en) | 1996-07-10 | 2003-01-01 | Matsushita Electric Ind Co Ltd | Liquid crystal alignment film and method for producing the same, and liquid crystal display apparatus using the same and method for producing the same |
JP3222386B2 (ja) | 1996-07-12 | 2001-10-29 | 信越化学工業株式会社 | コーティング剤組成物及びそのコーティング組成物で処理してなる物品 |
US6040053A (en) | 1996-07-19 | 2000-03-21 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
JPH1060280A (ja) | 1996-08-14 | 1998-03-03 | Japan Synthetic Rubber Co Ltd | 水系分散体 |
US6072018A (en) | 1996-09-30 | 2000-06-06 | Virginia Tech Intellectual Properties, Inc. | High abrasion resistant coating material |
EP0917550A4 (en) | 1996-10-25 | 1999-12-29 | Blue River International L L C | COMPOSITIONS FOR SILICON COATINGS AND USES THEREOF |
US5695551A (en) | 1996-12-09 | 1997-12-09 | Dow Corning Corporation | Water repellent composition |
JP3207774B2 (ja) | 1996-12-11 | 2001-09-10 | 双福鋼器株式会社 | 入出庫指示装置 |
WO1998026019A1 (fr) * | 1996-12-13 | 1998-06-18 | Matsushita Electric Works, Ltd. | Composition d'emulsion de silicium et procede d'elaboration |
EP0851300B1 (en) | 1996-12-24 | 2001-10-24 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition and method of forming resist pattern using the same |
US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US6174631B1 (en) * | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
US6491840B1 (en) | 2000-02-14 | 2002-12-10 | The Procter & Gamble Company | Polymer compositions having specified PH for improved dispensing and improved stability of wrinkle reducing compositions and methods of use |
DE19710461A1 (de) * | 1997-03-13 | 1998-09-17 | Wacker Chemie Gmbh | Farbstoffreste aufweisende Organopolysiloxane |
KR100497060B1 (ko) | 1997-05-13 | 2005-06-23 | 기린 비루 가부시키가이샤 | 유리질 피막형성 코팅제, 또 그것을 사용한 코팅방법 및코팅장치 |
TW473653B (en) | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
EP0881678A3 (en) | 1997-05-28 | 2000-12-13 | Texas Instruments Incorporated | Improvements in or relating to porous dielectric structures |
US5883011A (en) | 1997-06-18 | 1999-03-16 | Vlsi Technology, Inc. | Method of removing an inorganic antireflective coating from a semiconductor substrate |
JP4012600B2 (ja) | 1997-06-23 | 2007-11-21 | 富士通株式会社 | 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 |
JP3473887B2 (ja) | 1997-07-16 | 2003-12-08 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法 |
US5962067A (en) | 1997-09-09 | 1999-10-05 | Lucent Technologies Inc. | Method for coating an article with a ladder siloxane polymer and coated article |
JP4053631B2 (ja) | 1997-10-08 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
JPH11214658A (ja) | 1997-10-23 | 1999-08-06 | Texas Instr Inc <Ti> | 集積回路誘電体の製法 |
US6025232A (en) * | 1997-11-12 | 2000-02-15 | Micron Technology, Inc. | Methods of forming field effect transistors and related field effect transistor constructions |
US6057239A (en) | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
US6190839B1 (en) | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
WO1999037272A1 (de) | 1998-01-22 | 1999-07-29 | A. Kettenbach Fabrik Chemischer Erzeugnisse Dental-Spezialitäten Gmbh Und Co. Kg | Unterfütterung für prothesen und verfahren zur herstellung |
US6190955B1 (en) * | 1998-01-27 | 2001-02-20 | International Business Machines Corporation | Fabrication of trench capacitors using disposable hard mask |
CA2318881A1 (en) | 1998-02-04 | 1999-08-12 | Tina Garyantes | Virtual wells for use in high throughput screening assays |
US5972616A (en) | 1998-02-20 | 1999-10-26 | The Board Of Trustees Of The University Of Arkansas | TADG-15: an extracellular serine protease overexpressed in breast and ovarian carcinomas |
US7022821B1 (en) | 1998-02-20 | 2006-04-04 | O'brien Timothy J | Antibody kit for the detection of TADG-15 protein |
US6503586B1 (en) * | 1998-02-25 | 2003-01-07 | Arteva North America S.A.R.L. | Title improved infrared absorbing polyester packaging polymer |
JP3031325B2 (ja) | 1998-03-04 | 2000-04-10 | ダイキン工業株式会社 | 天井埋込式空気調和機 |
JP3047883B2 (ja) | 1998-03-17 | 2000-06-05 | 日本電気株式会社 | テストモードを有する半導体装置の出力回路 |
US6962727B2 (en) | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
US5985444A (en) | 1998-04-03 | 1999-11-16 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for fluoropolymers |
US5986344A (en) | 1998-04-14 | 1999-11-16 | Advanced Micro Devices, Inc. | Anti-reflective coating layer for semiconductor device |
DE19817069A1 (de) * | 1998-04-17 | 1999-10-21 | Clariant Gmbh | Infrarotstrahlung reflektierende Farbmittel |
US6576408B2 (en) | 1998-04-29 | 2003-06-10 | Brewer Science, Inc. | Thermosetting anti-reflective coatings comprising aryl urethanes of hydroxypropyl cellulose |
KR20010042973A (ko) | 1998-04-29 | 2001-05-25 | 테리 브레우어 | 셀룰로식 결합제로부터 유도된 급속 에칭, 열경화성 반사방지 코팅 |
US6461970B1 (en) | 1998-06-10 | 2002-10-08 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
WO2000003303A1 (fr) | 1998-07-10 | 2000-01-20 | Clariant International Ltd. | Composition pour film empechant la reflexion de fond et nouveau colorant polymere utilise dans celle-ci |
US6444584B1 (en) | 1998-07-16 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming composite silicon/dielectric/silicon stack layer |
US6103456A (en) | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
DE19834745A1 (de) | 1998-08-01 | 2000-02-03 | Agfa Gevaert Ag | Strahlungsempfindliches Gemisch mit IR-absorbierenden, anionischen Cyaninfarbstoffen und damit hergestelltes Aufzeichnungsmaterial |
US6152906A (en) | 1998-08-25 | 2000-11-28 | Kimberly-Clark Worldwide, Inc. | Absorbent article having improved breathability |
US6497893B1 (en) | 1999-06-30 | 2002-12-24 | Kimberly-Clark Worldwide, Inc. | Silk protein treatment composition and treated substrate for transfer to skin |
US6149934A (en) | 1999-04-23 | 2000-11-21 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a lotionized bodyside liner |
US6287286B1 (en) | 1998-08-25 | 2001-09-11 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a reduced viability of candida albicans |
US6217890B1 (en) | 1998-08-25 | 2001-04-17 | Susan Carol Paul | Absorbent article which maintains or improves skin health |
US6238379B1 (en) | 1998-08-25 | 2001-05-29 | Kimberly-Clark Worldwide, Inc. | Absorbent article with increased wet breathability |
US6448464B1 (en) | 1999-07-30 | 2002-09-10 | Kimberly-Clark Worldwide, Inc. | Absorbent article which maintains skin temperature when wet |
US6280911B1 (en) | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
US6410209B1 (en) | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
JP3523081B2 (ja) | 1998-09-21 | 2004-04-26 | 信越化学工業株式会社 | 有機珪素樹脂の製造方法及び該製造方法で得られた有機珪素樹脂を用いたポリウレタンフォームの製造方法 |
JP3852889B2 (ja) | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
US6190830B1 (en) * | 1998-09-29 | 2001-02-20 | Kodak Polychrome Graphics Llc | Processless direct write printing plate having heat sensitive crosslinked vinyl polymer with organoonium group and methods of imaging and printing |
US6667424B1 (en) | 1998-10-02 | 2003-12-23 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with nits and free-flowing particles |
US6562192B1 (en) | 1998-10-02 | 2003-05-13 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with absorbent free-flowing particles and methods for producing the same |
US6503233B1 (en) * | 1998-10-02 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent article having good body fit under dynamic conditions |
US6673982B1 (en) * | 1998-10-02 | 2004-01-06 | Kimberly-Clark Worldwide, Inc. | Absorbent article with center fill performance |
JP3702108B2 (ja) | 1998-10-07 | 2005-10-05 | 株式会社東芝 | レジストパターン形成方法 |
JP2000129073A (ja) * | 1998-10-26 | 2000-05-09 | Toyo Ink Mfg Co Ltd | 常温硬化性樹脂組成物および該樹脂組成物を塗工した基材 |
JP3059016U (ja) | 1998-11-10 | 1999-07-02 | 啓次 二宮 | ブレーカー用防音装置 |
US6251973B1 (en) * | 1998-11-23 | 2001-06-26 | Akzo Nobel N.V. | Coatings and coating compositions of a reactive group-containing polymer, a hydrazide and a silane |
DE69930874T2 (de) | 1998-11-24 | 2006-11-02 | Dow Global Technologies, Inc., Midland | Eine zusammensetzung enthaltend einen vernetzbaren matrixpercursor und eine porenstruktur bildendes material und eine daraus hergestellte poröse matrix |
US5981675A (en) | 1998-12-07 | 1999-11-09 | Bausch & Lomb Incorporated | Silicone-containing macromonomers and low water materials |
US6326231B1 (en) | 1998-12-08 | 2001-12-04 | Advanced Micro Devices, Inc. | Use of silicon oxynitride ARC for metal layers |
US6235456B1 (en) | 1998-12-09 | 2001-05-22 | Advanced Micros Devices, Inc. | Graded anti-reflective barrier films for ultra-fine lithography |
US6635281B2 (en) | 1998-12-23 | 2003-10-21 | Alza Corporation | Gastric retaining oral liquid dosage form |
US6342249B1 (en) | 1998-12-23 | 2002-01-29 | Alza Corporation | Controlled release liquid active agent formulation dosage forms |
KR100363695B1 (ko) | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
TW476865B (en) | 1999-01-28 | 2002-02-21 | Tokyo Ohka Kogyo Co Ltd | Undercoating composition for photolithographic resist |
US6544717B2 (en) | 1999-01-28 | 2003-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
US6187505B1 (en) * | 1999-02-02 | 2001-02-13 | International Business Machines Corporation | Radiation sensitive silicon-containing resists |
KR100644847B1 (ko) | 1999-02-26 | 2006-11-13 | 쇼와 덴코 가부시키가이샤 | 칼라필터용 광중합 개시제, 감광성 착색 조성물 및 칼라필터 |
US6316165B1 (en) | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
JP3692820B2 (ja) * | 1999-03-10 | 2005-09-07 | 株式会社デンソー | 自動車用制御装置 |
JP4270632B2 (ja) | 1999-03-12 | 2009-06-03 | 株式会社東芝 | ドライエッチングを用いた半導体装置の製造方法 |
US6849923B2 (en) * | 1999-03-12 | 2005-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of the same |
US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
US6313257B1 (en) | 1999-03-23 | 2001-11-06 | Lord Corporation | Poly (mercaptopropylaryl) curatives |
US6409883B1 (en) | 1999-04-16 | 2002-06-25 | Kimberly-Clark Worldwide, Inc. | Methods of making fiber bundles and fibrous structures |
JP3064753U (ja) | 1999-05-18 | 2000-01-21 | 竹沢産業株式会社 | 送風機 |
WO2000077575A1 (en) | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6268457B1 (en) | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6890448B2 (en) | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
US6696538B2 (en) * | 1999-07-27 | 2004-02-24 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
US6623791B2 (en) | 1999-07-30 | 2003-09-23 | Ppg Industries Ohio, Inc. | Coating compositions having improved adhesion, coated substrates and methods related thereto |
AU770696B2 (en) | 1999-07-30 | 2004-02-26 | Ppg Industries Ohio, Inc. | Cured coatings having improved scratch resistance, coated substrates and methods related thereto |
US6475892B1 (en) | 1999-08-02 | 2002-11-05 | Aadvanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
US6107167A (en) | 1999-08-02 | 2000-08-22 | Advanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
AR027842A1 (es) | 1999-08-23 | 2003-04-16 | Kimberly Clark Co | Un articulo absorbente el cual mantiene o mejora la salud de la piel |
AR025300A1 (es) | 1999-08-23 | 2002-11-20 | Kimberly Clark Co | Un articulo absorbente descartable con capacidad para respirar en humedo incrementada. |
JP2001079491A (ja) | 1999-09-10 | 2001-03-27 | Koito Mfg Co Ltd | 塗膜形成方法及び該方法で形成された車両用灯具 |
JP2003509825A (ja) | 1999-09-13 | 2003-03-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電 灯 |
JP4248098B2 (ja) | 1999-09-20 | 2009-04-02 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びレジストパターンの形成方法 |
US6410150B1 (en) | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
US6315946B1 (en) | 1999-10-21 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Navy | Ultra low carbon bainitic weathering steel |
US6313045B1 (en) | 1999-12-13 | 2001-11-06 | Dow Corning Corporation | Nanoporous silicone resins having low dielectric constants and method for preparation |
US6232424B1 (en) | 1999-12-13 | 2001-05-15 | Dow Corning Corporation | Soluble silicone resin compositions having good solution stability |
US6359096B1 (en) | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
US6541107B1 (en) | 1999-10-25 | 2003-04-01 | Dow Corning Corporation | Nanoporous silicone resins having low dielectric constants |
US6403464B1 (en) | 1999-11-03 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method to reduce the moisture content in an organic low dielectric constant material |
US6391524B2 (en) | 1999-11-19 | 2002-05-21 | Kodak Polychrome Graphics Llc | Article having imagable coatings |
TW468053B (en) | 1999-12-14 | 2001-12-11 | Nissan Chemical Ind Ltd | Antireflection film, process for forming the antireflection film, and antireflection glass |
JP4195773B2 (ja) | 2000-04-10 | 2008-12-10 | Jsr株式会社 | 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜 |
US6902771B2 (en) | 2000-02-01 | 2005-06-07 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
AU774200B2 (en) | 2000-02-08 | 2004-06-17 | Adsil, Lc | Method for improving heat efficiency using silane coatings and coated articles produced thereby |
ES2273811T3 (es) * | 2000-02-14 | 2007-05-16 | THE PROCTER & GAMBLE COMPANY | Composiciones acuosas, estables para tratar superficies,especialmente tejidos. |
WO2001063358A1 (en) | 2000-02-22 | 2001-08-30 | Brewer Science, Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
JP2001240800A (ja) * | 2000-02-25 | 2001-09-04 | Nippon Sheet Glass Co Ltd | 所定表面形状を有する物品の製造方法 |
DE60138327D1 (de) | 2000-02-28 | 2009-05-28 | Jsr Corp | Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid |
CN1227312C (zh) | 2000-02-28 | 2005-11-16 | 阿德西尔公司 | 硅烷基涂料组合物和用其得到的涂覆制件及其使用方法 |
US6451420B1 (en) | 2000-03-17 | 2002-09-17 | Nanofilm, Ltd. | Organic-inorganic hybrid polymer and method of making same |
JP3604007B2 (ja) | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
EP1278799A1 (en) | 2000-03-30 | 2003-01-29 | General Electric Company | Transparent, flame retardant poly(arylene ether) blends |
US6593388B2 (en) | 2000-04-04 | 2003-07-15 | Renssealer Polytechnic Institute | Oligomeric and polymeric photosensitizers comprising a polynuclear aromatic group |
US6268294B1 (en) | 2000-04-04 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Method of protecting a low-K dielectric material |
US7128976B2 (en) | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
DE60118052T2 (de) | 2000-04-13 | 2006-10-26 | Jsr Corp. | Überzugsmittel, Verfahren zur Herstellung, gehärtetes Produkt und Beschichtungsfilm |
US6374738B1 (en) | 2000-05-03 | 2002-04-23 | Presstek, Inc. | Lithographic imaging with non-ablative wet printing members |
US6504525B1 (en) * | 2000-05-03 | 2003-01-07 | Xerox Corporation | Rotating element sheet material with microstructured substrate and method of use |
JP3846545B2 (ja) * | 2000-06-08 | 2006-11-15 | 信越化学工業株式会社 | コーティング剤組成物、コーティング方法及び被覆物品 |
US6632535B1 (en) | 2000-06-08 | 2003-10-14 | Q2100, Inc. | Method of forming antireflective coatings |
US6852766B1 (en) * | 2000-06-15 | 2005-02-08 | 3M Innovative Properties Company | Multiphoton photosensitization system |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6323268B1 (en) | 2000-06-27 | 2001-11-27 | Dow Corning Corporation | Organosilicon water repellent compositions |
JP2002023350A (ja) | 2000-07-07 | 2002-01-23 | Fuji Photo Film Co Ltd | ネガ型平版印刷版原版 |
US6271273B1 (en) | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
US6635341B1 (en) | 2000-07-31 | 2003-10-21 | Ppg Industries Ohio, Inc. | Coating compositions comprising silyl blocked components, coating, coated substrates and methods related thereto |
TW556047B (en) | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
WO2002012252A1 (en) * | 2000-08-03 | 2002-02-14 | Ciba Specialty Chemicals Holding Inc. | Photostable, silylated benzotriazole uv absorbers and compositions stabilized therewith |
US6803034B2 (en) | 2000-08-18 | 2004-10-12 | Procter & Gamble Company | Compositions and methods for odor and fungal control in ballistic fabric and other protective garments |
US6645685B2 (en) | 2000-09-06 | 2003-11-11 | Mitsubishi Paper Mills Limited | Process for producing printed wiring board |
KR100841597B1 (ko) | 2000-09-13 | 2008-06-26 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 전자 디바이스 제조 |
JP3993373B2 (ja) | 2000-09-14 | 2007-10-17 | 信越化学工業株式会社 | ポリオルガノシロキサン化合物及びそれを含有するコーティング組成物 |
KR100382702B1 (ko) | 2000-09-18 | 2003-05-09 | 주식회사 엘지화학 | 유기실리케이트 중합체의 제조방법 |
US6505362B1 (en) * | 2000-09-25 | 2003-01-14 | Thomas Scipio | Method and system for cushioning a mobile prone person |
US6465358B1 (en) | 2000-10-06 | 2002-10-15 | Intel Corporation | Post etch clean sequence for making a semiconductor device |
US6884568B2 (en) | 2000-10-17 | 2005-04-26 | Kodak Polychrome Graphics, Llc | Stabilized infrared-sensitive polymerizable systems |
US6864040B2 (en) | 2001-04-11 | 2005-03-08 | Kodak Polychrome Graphics Llc | Thermal initiator system using leuco dyes and polyhalogene compounds |
US6503526B1 (en) * | 2000-10-20 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent articles enhancing skin barrier function |
US6756520B1 (en) | 2000-10-20 | 2004-06-29 | Kimberly-Clark Worldwide, Inc. | Hydrophilic compositions for use on absorbent articles to enhance skin barrier |
US6455416B1 (en) | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
US6699647B2 (en) | 2000-12-21 | 2004-03-02 | Eastman Kodak Company | High speed photothermographic materials containing tellurium compounds and methods of using same |
US6749860B2 (en) | 2000-12-22 | 2004-06-15 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with non-aqueous compositions containing botanicals |
US20020128615A1 (en) * | 2000-12-22 | 2002-09-12 | Tyrrell David John | Absorbent articles with non-aqueous compositions containing anionic polymers |
US6832064B2 (en) | 2000-12-29 | 2004-12-14 | Samsung Electronics Co., Ltd. | Seamless drying belt for electrophotographic process |
WO2002058699A1 (en) | 2001-01-25 | 2002-08-01 | Bristol-Myers Squibb Company | Pharmaceutical forms of epothilones for oral administration |
US7026053B2 (en) | 2001-01-29 | 2006-04-11 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US6465889B1 (en) | 2001-02-07 | 2002-10-15 | Advanced Micro Devices, Inc. | Silicon carbide barc in dual damascene processing |
US6712331B2 (en) | 2001-02-20 | 2004-03-30 | Q2100, Inc. | Holder for mold assemblies with indicia |
US6752613B2 (en) | 2001-02-20 | 2004-06-22 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for initiation of lens curing |
US6790024B2 (en) | 2001-02-20 | 2004-09-14 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having multiple conveyor systems |
US6702564B2 (en) | 2001-02-20 | 2004-03-09 | Q2100, Inc. | System for preparing an eyeglass lens using colored mold holders |
US6758663B2 (en) | 2001-02-20 | 2004-07-06 | Q2100, Inc. | System for preparing eyeglass lenses with a high volume curing unit |
US6893245B2 (en) | 2001-02-20 | 2005-05-17 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a computer system controller |
US7139636B2 (en) | 2001-02-20 | 2006-11-21 | Q2100, Inc. | System for preparing eyeglass lenses with bar code reader |
US7011773B2 (en) | 2001-02-20 | 2006-03-14 | Q2100, Inc. | Graphical interface to display mold assembly position in a lens forming apparatus |
US6726463B2 (en) | 2001-02-20 | 2004-04-27 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a dual computer system controller |
US6676398B2 (en) * | 2001-02-20 | 2004-01-13 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a prescription reader |
US6808381B2 (en) | 2001-02-20 | 2004-10-26 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller |
US6612828B2 (en) | 2001-02-20 | 2003-09-02 | Q2100, Inc. | Fill system with controller for monitoring use |
US6840752B2 (en) * | 2001-02-20 | 2005-01-11 | Q2100, Inc. | Apparatus for preparing multiple eyeglass lenses |
US6875005B2 (en) | 2001-02-20 | 2005-04-05 | Q1200, Inc. | Apparatus for preparing an eyeglass lens having a gating device |
US6709257B2 (en) | 2001-02-20 | 2004-03-23 | Q2100, Inc. | Eyeglass lens forming apparatus with sensor |
US7052262B2 (en) * | 2001-02-20 | 2006-05-30 | Q2100, Inc. | System for preparing eyeglasses lens with filling station |
US6655946B2 (en) | 2001-02-20 | 2003-12-02 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for conveyor and curing units |
US6717181B2 (en) | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
US6825303B2 (en) | 2001-02-26 | 2004-11-30 | Dielectric Systems, Inc. | Integration of low ε thin films and Ta into Cu dual damascene |
US6797343B2 (en) | 2001-12-20 | 2004-09-28 | Dielectric Systems, Inc. | Dielectric thin films from fluorinated precursors |
US6703462B2 (en) | 2001-08-09 | 2004-03-09 | Dielectric Systems Inc. | Stabilized polymer film and its manufacture |
US20020123592A1 (en) | 2001-03-02 | 2002-09-05 | Zenastra Photonics Inc. | Organic-inorganic hybrids surface adhesion promoter |
US6582861B2 (en) | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
JP2002285086A (ja) | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
US6617257B2 (en) | 2001-03-30 | 2003-09-09 | Lam Research Corporation | Method of plasma etching organic antireflective coating |
TW591058B (en) * | 2001-04-09 | 2004-06-11 | Sekisui Chemical Co Ltd | Photoreactive composition |
US6846614B2 (en) * | 2002-02-04 | 2005-01-25 | Kodak Polychrome Graphics Llc | On-press developable IR sensitive printing plates |
US6893797B2 (en) | 2001-11-09 | 2005-05-17 | Kodak Polychrome Graphics Llc | High speed negative-working thermal printing plates |
US20040091811A1 (en) | 2002-10-30 | 2004-05-13 | Munnelly Heidi M. | Hetero-substituted aryl acetic acid co-initiators for IR-sensitive compositions |
JP2002332354A (ja) * | 2001-05-08 | 2002-11-22 | Jsr Corp | 水系分散体とその製造方法および塗装体 |
TW576859B (en) | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
US6740685B2 (en) | 2001-05-30 | 2004-05-25 | Honeywell International Inc. | Organic compositions |
JP4146105B2 (ja) | 2001-05-30 | 2008-09-03 | 富士フイルム株式会社 | 紫外線吸収剤及びその製造方法、紫外線吸収剤を含有する組成物、ならびに画像形成方法 |
US6448185B1 (en) | 2001-06-01 | 2002-09-10 | Intel Corporation | Method for making a semiconductor device that has a dual damascene interconnect |
US20030112737A1 (en) | 2001-06-05 | 2003-06-19 | Thompson Robert F. | Limited play optical devices with interstitial reactive layer and methods of making same |
US6558880B1 (en) | 2001-06-06 | 2003-05-06 | Eastman Kodak Company | Thermally developable imaging materials containing heat-bleachable antihalation composition |
JP4181312B2 (ja) | 2001-06-25 | 2008-11-12 | 富士フイルム株式会社 | ネガ型画像記録材料 |
JP4965033B2 (ja) | 2001-06-29 | 2012-07-04 | 東レ・ダウコーニング株式会社 | 液状アルコキシシリル官能性シリコーン樹脂、その製造方法および硬化性シリコーン樹脂組成物 |
CN1276303C (zh) | 2001-06-29 | 2006-09-20 | Jsr株式会社 | 酸发生剂及辐射敏感树脂组合物 |
US6703169B2 (en) | 2001-07-23 | 2004-03-09 | Applied Materials, Inc. | Method of preparing optically imaged high performance photomasks |
US6649212B2 (en) | 2001-07-30 | 2003-11-18 | Guardian Industries Corporation | Modified silicon-based UV absorbers useful in crosslinkable polysiloxane coatings via sol-gel polymerization |
US6592999B1 (en) | 2001-07-31 | 2003-07-15 | Ppg Industries Ohio, Inc. | Multi-layer composites formed from compositions having improved adhesion, coating compositions, and methods related thereto |
KR100436220B1 (ko) | 2001-08-30 | 2004-06-12 | 주식회사 네패스 | 바닥 반사방지막용 유기 중합체, 그의 제조방법 및 그를함유하는 조성물 |
US6514677B1 (en) * | 2001-08-31 | 2003-02-04 | Eastman Kodak Company | Thermally developable infrared sensitive imaging materials containing heat-bleachable antihalation composition |
US6824952B1 (en) | 2001-09-13 | 2004-11-30 | Microchem Corp. | Deep-UV anti-reflective resist compositions |
EP1296365B1 (en) | 2001-09-25 | 2010-09-22 | JSR Corporation | Method of film formation |
TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
US6730461B2 (en) | 2001-10-26 | 2004-05-04 | Eastman Kodak Company | Thermally developable imaging materials with reduced mottle providing improved image uniformity |
US6949297B2 (en) | 2001-11-02 | 2005-09-27 | 3M Innovative Properties Company | Hybrid adhesives, articles, and methods |
WO2003044600A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
AU2002359387A1 (en) | 2001-11-15 | 2003-06-10 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
US6573175B1 (en) | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
AU2002354487A1 (en) | 2001-12-14 | 2003-06-30 | Asahi Kasei Kabushiki Kaisha | Coating composition for forming low-refractive index thin layers |
US20030171729A1 (en) | 2001-12-28 | 2003-09-11 | Kaun James Martin | Multifunctional containment sheet and system for absorbent atricles |
US20030176718A1 (en) | 2002-01-08 | 2003-09-18 | Rantala Juha T. | Methods and compounds for making coatings, waveguides and other optical devices |
US6924384B2 (en) | 2002-01-08 | 2005-08-02 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US6803476B2 (en) | 2002-01-08 | 2004-10-12 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US20030171607A1 (en) * | 2002-01-08 | 2003-09-11 | Rantala Juha T. | Methods and compounds for making coatings, waveguides and other optical devices |
US6831189B2 (en) | 2002-01-08 | 2004-12-14 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
US6943447B2 (en) * | 2002-01-10 | 2005-09-13 | Fujitsu Limited | Thin film multi-layer wiring substrate having a coaxial wiring structure in at least one layer |
US20040002617A1 (en) | 2002-01-17 | 2004-01-01 | Rantala Juha T. | Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits |
US20050032357A1 (en) | 2002-01-17 | 2005-02-10 | Rantala Juha T. | Dielectric materials and methods for integrated circuit applications |
EP1490454B1 (en) | 2002-01-17 | 2012-08-15 | Silecs OY | Method for making an integrated circuit device and corresponding integrated circuit device |
US7144827B2 (en) | 2002-01-17 | 2006-12-05 | Silecs Oy | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
ATE448193T1 (de) | 2002-01-18 | 2009-11-15 | Merck & Co Inc | ßN-(BENZYL)AMINOALKYL CARBOXYLATE, PHOSPHINATE, PHOSPHONATE UND TETRAZOLE ALS EDG REZEPTORAGONISTENß |
JP2003211070A (ja) | 2002-01-21 | 2003-07-29 | Toshiba Corp | 塗膜の形成方法、半導体装置の製造方法および塗布液 |
TWI273352B (en) * | 2002-01-24 | 2007-02-11 | Jsr Corp | Radiation sensitive composition for forming an insulating film, insulating film and display device |
TW200401944A (en) | 2002-02-01 | 2004-02-01 | Seiko Epson Corp | Circuit substrate, electro-optical device and electronic appliances |
CA2474913A1 (en) | 2002-02-05 | 2003-08-14 | Gencell Corporation | Silane coated metallic fuel cell components and methods of manufacture |
WO2003066750A1 (fr) | 2002-02-06 | 2003-08-14 | Asahi Kasei Kabushiki Kaisha | Compositions de revetement pour former des films minces isolants |
US7211365B2 (en) | 2002-03-04 | 2007-05-01 | Shipley Company, L.L.C. | Negative photoresists for short wavelength imaging |
DE10213294B4 (de) | 2002-03-25 | 2015-05-13 | Osram Gmbh | Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement |
US6906157B2 (en) | 2002-04-09 | 2005-06-14 | Eastman Kodak Company | Polymer particle stabilized by dispersant and method of preparation |
US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
EP1495066B1 (en) | 2002-04-18 | 2008-07-16 | LG Chem, Ltd. | Organic silicate polymer and insulation film comprising the same |
US6787281B2 (en) | 2002-05-24 | 2004-09-07 | Kodak Polychrome Graphics Llc | Selected acid generating agents and their use in processes for imaging radiation-sensitive elements |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
KR100515583B1 (ko) | 2002-06-27 | 2005-09-20 | 주식회사 엘지화학 | 유기실리케이트 중합체 및 이를 함유하는 절연막 |
CN1248556C (zh) * | 2002-08-05 | 2006-03-29 | 佳能株式会社 | 电极和布线材料吸收用底层图形形成材料及其应用 |
US6896821B2 (en) | 2002-08-23 | 2005-05-24 | Dalsa Semiconductor Inc. | Fabrication of MEMS devices with spin-on glass |
DE10242418A1 (de) | 2002-09-12 | 2004-03-25 | Wacker-Chemie Gmbh | Verfahren zur Herstellung von Organopolysiloxanharz |
US20040067437A1 (en) | 2002-10-06 | 2004-04-08 | Shipley Company, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7005390B2 (en) | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
US7038328B2 (en) | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
US7189490B2 (en) | 2002-10-21 | 2007-03-13 | Shipley Company, L.L.C. | Photoresists containing sulfonamide component |
US6783468B2 (en) | 2002-10-24 | 2004-08-31 | Acushnet Company | Low deformation golf ball |
US7122384B2 (en) * | 2002-11-06 | 2006-10-17 | E. I. Du Pont De Nemours And Company | Resonant light scattering microparticle methods |
JP2004161875A (ja) | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁間膜及び半導体装置 |
JP3884699B2 (ja) | 2002-11-13 | 2007-02-21 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
US7465414B2 (en) | 2002-11-14 | 2008-12-16 | Transitions Optical, Inc. | Photochromic article |
EP1422566A1 (en) | 2002-11-20 | 2004-05-26 | Shipley Company, L.L.C. | Multilayer photoresist systems |
JP3879657B2 (ja) * | 2002-11-20 | 2007-02-14 | 日東電工株式会社 | 反射防止層用硬化性樹脂組成物、反射防止層、反射防止フィルム、光学素子および画像表示装置 |
US7018779B2 (en) | 2003-01-07 | 2006-03-28 | International Business Machines Corporation | Apparatus and method to improve resist line roughness in semiconductor wafer processing |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
US7507783B2 (en) | 2003-02-24 | 2009-03-24 | Brewer Science Inc. | Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process |
US6902861B2 (en) | 2003-03-10 | 2005-06-07 | Kodak Polychrome Graphics, Llc | Infrared absorbing compounds and their use in photoimageable elements |
JP2004307692A (ja) | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置 |
JP2004307694A (ja) | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。 |
KR100882409B1 (ko) | 2003-06-03 | 2009-02-05 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반사 방지용 실리콘 수지, 반사 방지막 재료, 이것을 이용한 반사 방지막 및 패턴 형성 방법 |
US7202013B2 (en) | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7008476B2 (en) | 2003-06-11 | 2006-03-07 | Az Electronic Materials Usa Corp. | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof |
US6899988B2 (en) | 2003-06-13 | 2005-05-31 | Kodak Polychrome Graphics Llc | Laser thermal metallic donors |
JP2005049542A (ja) * | 2003-07-31 | 2005-02-24 | Fuji Photo Film Co Ltd | 画像形成方法及び現像液 |
US6942083B2 (en) | 2003-08-07 | 2005-09-13 | Ford Global Technologies, Llc | Viscous fan clutch actuated by a heating element and ambient air |
US7172849B2 (en) * | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
US20050074981A1 (en) | 2003-10-06 | 2005-04-07 | Meagley Robert P. | Increasing the etch resistance of photoresists |
US7270931B2 (en) | 2003-10-06 | 2007-09-18 | International Business Machines Corporation | Silicon-containing compositions for spin-on ARC/hardmask materials |
KR100979355B1 (ko) | 2003-10-09 | 2010-08-31 | 삼성전자주식회사 | 다반응성 환형 실리케이트 화합물, 상기 화합물로부터제조된 실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법 |
US20050089642A1 (en) | 2003-10-28 | 2005-04-28 | Rohm And Haas Electronic Materials, L.L.C. | Dielectric materials preparation |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7470634B2 (en) | 2003-11-24 | 2008-12-30 | Samsung Electronics Co., Ltd. | Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane |
TWI367686B (en) | 2004-04-07 | 2012-07-01 | Semiconductor Energy Lab | Light emitting device, electronic device, and television device |
JP4553113B2 (ja) | 2004-06-10 | 2010-09-29 | 信越化学工業株式会社 | 多孔質膜形成用組成物、パターン形成方法、及び多孔質犠性膜 |
EP1615260A3 (en) * | 2004-07-09 | 2009-09-16 | JSR Corporation | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device |
US7475093B2 (en) | 2004-10-15 | 2009-01-06 | Microsoft Corporation | Memory cache management in XML/relational data mapping |
EP1662322B1 (en) * | 2004-11-26 | 2017-01-11 | Toray Industries, Inc. | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film |
WO2006068181A1 (ja) | 2004-12-21 | 2006-06-29 | Hitachi Chemical Company, Ltd. | 被膜、シリカ系被膜及びその形成方法、シリカ系被膜形成用組成物、並びに電子部品 |
US20060155594A1 (en) | 2005-01-13 | 2006-07-13 | Jess Almeida | Adaptive step-by-step process with guided conversation logs for improving the quality of transaction data |
JP4513966B2 (ja) | 2005-03-07 | 2010-07-28 | 信越化学工業株式会社 | プライマー組成物及びそれを用いた電気電子部品 |
JP3154007U (ja) | 2009-07-16 | 2009-09-24 | 岳雨 王 | ペットつなぎ |
-
2007
- 2007-08-14 US US11/838,854 patent/US8642246B2/en active Active
-
2008
- 2008-02-23 KR KR1020097020181A patent/KR20090122460A/ko not_active Application Discontinuation
- 2008-02-23 WO PCT/US2008/054814 patent/WO2008106379A1/en active Application Filing
- 2008-02-23 JP JP2009551053A patent/JP2010519596A/ja active Pending
- 2008-02-23 EP EP08730587A patent/EP2118204A1/en not_active Withdrawn
- 2008-02-25 TW TW097106487A patent/TW200900863A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232356A (ja) * | 1988-07-21 | 1990-02-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH045658A (ja) * | 1990-04-23 | 1992-01-09 | Toray Dow Corning Silicone Co Ltd | 3層レジスト中間層用材料およびパターン形成方法 |
JP2004506797A (ja) * | 2000-08-21 | 2004-03-04 | ダウ グローバル テクノロジーズ インコーポレイティド | マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 |
JP2004059737A (ja) * | 2002-07-29 | 2004-02-26 | Jsr Corp | 膜形成用ポリシロキサンの製造方法、膜形成用組成物、膜形成方法および膜 |
WO2006093057A1 (ja) * | 2005-03-01 | 2006-09-08 | Jsr Corporation | レジスト下層膜用組成物およびその製造方法 |
WO2007066597A1 (ja) * | 2005-12-06 | 2007-06-14 | Nissan Chemical Industries, Ltd. | 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012053253A (ja) * | 2010-09-01 | 2012-03-15 | Shin Etsu Chem Co Ltd | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
US8501386B2 (en) | 2010-09-01 | 2013-08-06 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process |
WO2013051558A1 (ja) * | 2011-10-06 | 2013-04-11 | 日産化学工業株式会社 | ケイ素含有euvレジスト下層膜形成組成物 |
US9337052B2 (en) | 2011-10-06 | 2016-05-10 | Nissan Chemical Industries, Ltd. | Silicon-containing EUV resist underlayer film forming composition |
JP2021531192A (ja) * | 2018-11-23 | 2021-11-18 | エルジー・ケム・リミテッド | 光学積層体 |
JP7171123B2 (ja) | 2018-11-23 | 2022-11-15 | エルジー・ケム・リミテッド | 光学積層体 |
Also Published As
Publication number | Publication date |
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US8642246B2 (en) | 2014-02-04 |
WO2008106379A1 (en) | 2008-09-04 |
KR20090122460A (ko) | 2009-11-30 |
EP2118204A1 (en) | 2009-11-18 |
US20080206690A1 (en) | 2008-08-28 |
TW200900863A (en) | 2009-01-01 |
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