KR100841597B1 - 전자 디바이스 제조 - Google Patents
전자 디바이스 제조 Download PDFInfo
- Publication number
- KR100841597B1 KR100841597B1 KR1020037003612A KR20037003612A KR100841597B1 KR 100841597 B1 KR100841597 B1 KR 100841597B1 KR 1020037003612 A KR1020037003612 A KR 1020037003612A KR 20037003612 A KR20037003612 A KR 20037003612A KR 100841597 B1 KR100841597 B1 KR 100841597B1
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric
- porogen
- layer
- delete delete
- dielectric matrix
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 239000003361 porogen Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000003989 dielectric material Substances 0.000 claims description 138
- 239000011159 matrix material Substances 0.000 claims description 90
- 239000000203 mixture Substances 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- -1 oxides Chemical class 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 claims description 10
- 230000003750 conditioning effect Effects 0.000 claims description 10
- 238000006731 degradation reaction Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 150000007860 aryl ester derivatives Chemical class 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 4
- 229920003050 poly-cycloolefin Polymers 0.000 claims description 4
- 229920002577 polybenzoxazole Polymers 0.000 claims description 4
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 27
- 239000010410 layer Substances 0.000 description 130
- 239000011148 porous material Substances 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 17
- 238000001465 metallisation Methods 0.000 description 13
- 238000001723 curing Methods 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229920001400 block copolymer Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000412 polyarylene Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 229920001519 homopolymer Polymers 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 229920000417 polynaphthalene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920001153 Polydicyclopentadiene Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- GUVUOGQBMYCBQP-UHFFFAOYSA-N dmpu Chemical compound CN1CCCN(C)C1=O GUVUOGQBMYCBQP-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005441 electronic device fabrication Methods 0.000 description 1
- VCNSRRFUKAQODN-UHFFFAOYSA-N ethyl 2-hydroxypropanoate;1-methoxypropan-2-yl acetate Chemical compound CCOC(=O)C(C)O.COCC(C)OC(C)=O VCNSRRFUKAQODN-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 125000001145 hydrido group Chemical group *[H] 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004644 polycyanurate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C67/00—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00
- B29C67/20—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00 for porous or cellular articles, e.g. of foam plastics, coarse-pored
- B29C67/202—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00 for porous or cellular articles, e.g. of foam plastics, coarse-pored comprising elimination of a solid or a liquid ingredient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0116—Porous, e.g. foam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (37)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- a) 하나 이상의 유전체 매트릭스 물질 및 제거가능한 포로겐을 포함하는 B-단계 유전체 매트릭스 조성물을 기판 표면상에 배치하고;b) B-단계 유전체 매트릭스 조성물을 경화하여 포로겐을 실질적으로 제거함이 없이 유전체 매트릭스 물질을 형성하며;c) 유전체 매트릭스 물질을 패턴화한 후;d) 유전체 물질 표면상에 금속층을 침착시키고;e) 유전체 매트릭스 물질을, 포로겐이 적어도 부분적으로 제거되도록 컨디셔닝하여 실질적으로 유전체 물질의 분해없이 다공성 유전체 물질층을 형성하는 단계를 특징으로 하여, 전자 디바이스(electronic device)를 제조하는 방법
- 제 21 항에 있어서, B-단계 유전체 물질이 유기 폴리실리카; 실리콘, 붕소 또는 알루미늄의 카바이드, 옥사이드, 나이트라이드 및 옥시플루오라이드; 벤조사이클로부텐; 폴리(아릴 에스테르); 폴리(에테르 케톤); 폴리카보네이트; 폴리(아릴렌 에테르); 폴리방향족 탄화수소; 폴리(과불소화 탄화수소); 폴리이미드; 폴리벤족사졸 및 폴리사이클로올레핀의 하나 이상중에서 선택되는 방법.
- 제 21 항에 있어서, B-단계 유전체 물질이 알킬 실세스퀴옥산; 아릴 실세스퀴옥산; 알킬/아릴 실세스퀴옥산 혼합물; 및 알킬 실세스퀴옥산의 혼합물중에서 선택되는 방법.
- 제 21 항에 있어서, 금속층이 장벽층, 씨드(seed)층 및 어퍼쳐 충전(aperture fill) 금속층의 하나 이상인 방법.
- 제 21 항에 있어서, 제거가능한 포로겐이 B-단계 유전체 물질과 실질적으로 상용적인(compatibile) 방법.
- 제 21 항에 있어서, 포로겐을 적어도 부분적으로 제거하기 전에 금속층을 평탄화하는 단계를 추가로 포함하는 방법.
- a) 하나 이상의 유전체 매트릭스 물질 및 제거가능한 포로겐을 포함하는 B-단계 유전체 매트릭스 조성물을 기판 표면상에 배치하고;b) B-단계 유전체 매트릭스 조성물을 경화하여 포로겐을 실질적으로 제거함이 없이 유전체 매트릭스 물질을 형성한 후;c) 유전체 매트릭스 물질을 패턴화하며;d) 유전체 물질 표면상에 적어도 하나의 장벽층 또는 씨드층을 침착시키고;e) 어퍼쳐 충전 필름층을 침착시킨 다음;f) 어퍼쳐 충전 필름층을 평탄화하고(planarizing);g) 유전체 매트릭스 물질을, 포로겐이 적어도 부분적으로 제거되도록 컨디셔닝하여 실질적으로 유전체 물질의 분해없이 다공성 유전체 물질층을 형성하는 단계를 특징으로 하여, 전자 디바이스를 제조하는 방법
- 제 27 항에 있어서, B-단계 유전체 물질이 유기 폴리실리카; 실리콘, 붕소 또는 알루미늄의 카바이드, 옥사이드, 나이트라이드 및 옥시플루오라이드; 벤조사이클로부텐; 폴리(아릴 에스테르); 폴리(에테르 케톤); 폴리카보네이트; 폴리(아릴렌 에테르); 폴리방향족 탄화수소; 폴리(과불소화 탄화수소); 폴리이미드; 폴리벤족사졸 및 폴리사이클로올레핀의 하나 이상중에서 선택되는 방법.
- 제 27 항에 있어서, 어퍼쳐 충전 금속층이 구리 또는 구리 합금을 포함하는 방법.
- 제 27 항에 있어서, 제거가능한 포로겐이 B-단계 유전체 물질과 실질적으로 상용적인 방법.
- a) 하나 이상의 유전체 매트릭스 물질 및 제거가능한 포로겐을 포함하는 B-단계 유전체 매트릭스 조성물을 기판 표면상에 배치하고;b) B-단계 유전체 매트릭스 조성물을 경화하여 포로겐을 실질적으로 제거함이 없이 유전체 매트릭스 물질을 형성한 후;c) 유전체 매트릭스 물질을 패턴화하며;d) 유전체 물질 표면상에 금속층을 침착시키고;e) 유전체 매트릭스 물질을, 포로겐이 적어도 부분적으로 제거되도록 컨디셔닝하여 실질적으로 유전체 물질의 분해없이 다공성 유전체 물질층을 형성하며;f) 다공성 유전층을 첨가된 캡층(cap layer)이 제거되도록 후속 처리 단계로 처리하는 단계를 특징으로 하여, 전자 디바이스를 제조하는 방법.
- a) 경화된 유전체 매트릭스 물질을 평탄화하는 단계;b) 평탄화된 경화된 유전체 매트릭스 물질로부터 포로겐을 제거하여 다공성 유전체 물질층을 형성하는 단계;c) 다공성 유전체 물질층상에 B-단계 유전체 매트릭스 조성물을 배치하는 단계; 및d) B-단계 유전체 매트릭스 조성물을 경화하여 유전체 매트릭스 물질을 형성하는 단계를 포함하는 것을 특징으로 하여, 다공성 유전체 물질층에 대한 유전체 물질의 접착성을 향상시키는 방법.
- 제 21 항 내지 32 항중 어느 한항에 있어서, 포로겐이 가교화 중합 입자를 포함하는 방법.
- 제 21 항 내지 32 항중 어느 한항에 있어서, 유전체 매트릭스 물질을 열 및 조사선에 노출하여 적어도 부분적으로 포로겐을 제거하는 방법.
- 제 34 항에 있어서, 조사선이 가시광선, IR, 마이크로웨이브, UV 및 전자 빔중에서 선택되는 방법.
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23212700P | 2000-09-13 | 2000-09-13 | |
US60/232,127 | 2000-09-13 | ||
PCT/US2001/028208 WO2002023629A2 (en) | 2000-09-13 | 2001-09-08 | Electronic device manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030038737A KR20030038737A (ko) | 2003-05-16 |
KR100841597B1 true KR100841597B1 (ko) | 2008-06-26 |
Family
ID=22871971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037003612A KR100841597B1 (ko) | 2000-09-13 | 2001-09-08 | 전자 디바이스 제조 |
Country Status (8)
Country | Link |
---|---|
US (5) | US6596467B2 (ko) |
EP (1) | EP1323189A2 (ko) |
JP (1) | JP2004509468A (ko) |
KR (1) | KR100841597B1 (ko) |
CN (1) | CN1302532C (ko) |
AU (1) | AU2001288954A1 (ko) |
TW (1) | TW587307B (ko) |
WO (1) | WO2002023629A2 (ko) |
Families Citing this family (115)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7253731B2 (en) | 2001-01-23 | 2007-08-07 | Raymond Anthony Joao | Apparatus and method for providing shipment information |
KR100841597B1 (ko) * | 2000-09-13 | 2008-06-26 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 전자 디바이스 제조 |
US6998148B1 (en) | 2001-03-28 | 2006-02-14 | Shipley Company, L.L.C. | Porous materials |
JP2003152165A (ja) * | 2001-11-15 | 2003-05-23 | Fujitsu Ltd | 半導体装置およびその製造方法 |
KR20030094099A (ko) * | 2002-06-03 | 2003-12-11 | 쉬플리 캄파니, 엘.엘.씨. | 전자 디바이스 제조 |
US6903001B2 (en) * | 2002-07-18 | 2005-06-07 | Micron Technology Inc. | Techniques to create low K ILD for BEOL |
US20040017698A1 (en) * | 2002-07-25 | 2004-01-29 | Micron Technology, Inc. | Refined gate coupled noise compensation for open-drain output from semiconductor device |
US7153754B2 (en) * | 2002-08-29 | 2006-12-26 | Micron Technology, Inc. | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same |
JP2004274020A (ja) * | 2002-09-24 | 2004-09-30 | Rohm & Haas Electronic Materials Llc | 電子デバイス製造 |
US6746967B2 (en) * | 2002-09-30 | 2004-06-08 | Intel Corporation | Etching metal using sonication |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US7018918B2 (en) * | 2002-11-21 | 2006-03-28 | Intel Corporation | Method of forming a selectively converted inter-layer dielectric using a porogen material |
US6943121B2 (en) * | 2002-11-21 | 2005-09-13 | Intel Corporation | Selectively converted inter-layer dielectric |
US20040130027A1 (en) * | 2003-01-07 | 2004-07-08 | International Business Machines Corporation | Improved formation of porous interconnection layers |
US7138158B2 (en) * | 2003-02-28 | 2006-11-21 | Intel Corporation | Forming a dielectric layer using a hydrocarbon-containing precursor |
TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US6737365B1 (en) * | 2003-03-24 | 2004-05-18 | Intel Corporation | Forming a porous dielectric layer |
US20040191417A1 (en) * | 2003-03-28 | 2004-09-30 | Dorie Yontz | Method of integrating a porous dielectric in an integrated circuit device |
US7241704B1 (en) | 2003-03-31 | 2007-07-10 | Novellus Systems, Inc. | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US7176144B1 (en) | 2003-03-31 | 2007-02-13 | Novellus Systems, Inc. | Plasma detemplating and silanol capping of porous dielectric films |
US20050260420A1 (en) * | 2003-04-01 | 2005-11-24 | Collins Martha J | Low dielectric materials and methods for making same |
US6921978B2 (en) * | 2003-05-08 | 2005-07-26 | International Business Machines Corporation | Method to generate porous organic dielectric |
US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
US20040248403A1 (en) * | 2003-06-09 | 2004-12-09 | Dubin Valery M. | Method for forming electroless metal low resistivity interconnects |
US7122481B2 (en) * | 2003-07-25 | 2006-10-17 | Intel Corporation | Sealing porous dielectrics with silane coupling reagents |
DE20321548U1 (de) * | 2003-09-19 | 2007-11-29 | Gallus Druckmaschinen Gmbh | Rotationsdruckmaschine |
JP2005133060A (ja) * | 2003-10-29 | 2005-05-26 | Rohm & Haas Electronic Materials Llc | 多孔性材料 |
TWI220774B (en) * | 2003-11-03 | 2004-09-01 | Univ Nat Sun Yat Sen | Method for patterning low dielectric constant film and method for manufacturing dual damascene structure |
JP2005142473A (ja) * | 2003-11-10 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7390537B1 (en) | 2003-11-20 | 2008-06-24 | Novellus Systems, Inc. | Methods for producing low-k CDO films with low residual stress |
JP2005181958A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | レーザーアブレーションを用いる電子部品および光学部品の形成方法 |
US7125793B2 (en) * | 2003-12-23 | 2006-10-24 | Intel Corporation | Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material |
US7094713B1 (en) | 2004-03-11 | 2006-08-22 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7341761B1 (en) | 2004-03-11 | 2008-03-11 | Novellus Systems, Inc. | Methods for producing low-k CDO films |
US7381662B1 (en) | 2004-03-11 | 2008-06-03 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7781351B1 (en) | 2004-04-07 | 2010-08-24 | Novellus Systems, Inc. | Methods for producing low-k carbon doped oxide films with low residual stress |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
US7078814B2 (en) * | 2004-05-25 | 2006-07-18 | International Business Machines Corporation | Method of forming a semiconductor device having air gaps and the structure so formed |
US7157367B2 (en) * | 2004-06-04 | 2007-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device structure having enhanced surface adhesion and failure mode analysis |
US7629272B2 (en) * | 2004-06-07 | 2009-12-08 | Axcelis Technologies, Inc. | Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics |
US20050272220A1 (en) * | 2004-06-07 | 2005-12-08 | Carlo Waldfried | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
US7303994B2 (en) * | 2004-06-14 | 2007-12-04 | International Business Machines Corporation | Process for interfacial adhesion in laminate structures through patterned roughing of a surface |
DE102004030674A1 (de) * | 2004-06-24 | 2006-01-19 | Basf Ag | Vorrichtung und Verfahren zum Härten mit energiereicher Strahlung unter Inertgasatmosphäre |
US7421885B2 (en) * | 2004-06-28 | 2008-09-09 | Air Products And Chemicals, Inc. | Method for characterizing porous low dielectric constant films |
JP4492947B2 (ja) * | 2004-07-23 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20060046044A1 (en) * | 2004-08-24 | 2006-03-02 | Lee Chung J | Porous composite polymer dielectric film |
EP1632956A1 (en) * | 2004-09-07 | 2006-03-08 | Rohm and Haas Electronic Materials, L.L.C. | Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films |
US7326444B1 (en) | 2004-09-14 | 2008-02-05 | Novellus Systems, Inc. | Methods for improving integration performance of low stress CDO films |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US7695765B1 (en) | 2004-11-12 | 2010-04-13 | Novellus Systems, Inc. | Methods for producing low-stress carbon-doped oxide films with improved integration properties |
US7229909B2 (en) * | 2004-12-09 | 2007-06-12 | International Business Machines Corporation | Integrated circuit chip utilizing dielectric layer having oriented cylindrical voids formed from carbon nanotubes |
WO2006064416A1 (en) * | 2004-12-16 | 2006-06-22 | Koninklijke Philips Electronics N.V. | A semiconductor device having a recess with non-porous walls in a porous dielectric and a method of manufacturing such a semiconductor device |
TWI261915B (en) * | 2005-01-07 | 2006-09-11 | Ind Tech Res Inst | Phase change memory and fabricating method thereof |
TW200631095A (en) * | 2005-01-27 | 2006-09-01 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
US7510982B1 (en) | 2005-01-31 | 2009-03-31 | Novellus Systems, Inc. | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles |
US7166531B1 (en) | 2005-01-31 | 2007-01-23 | Novellus Systems, Inc. | VLSI fabrication processes for introducing pores into dielectric materials |
US7341788B2 (en) * | 2005-03-11 | 2008-03-11 | International Business Machines Corporation | Materials having predefined morphologies and methods of formation thereof |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US7459183B2 (en) * | 2005-07-27 | 2008-12-02 | International Business Machines Corporation | Method of forming low-K interlevel dielectric layers and structures |
US20070032077A1 (en) * | 2005-08-08 | 2007-02-08 | Tzung-Yu Hung | Method of manufacturing metal plug and contact |
JP2007053133A (ja) * | 2005-08-15 | 2007-03-01 | Toshiba Corp | 半導体装置及びその製造方法 |
US7465652B2 (en) | 2005-08-16 | 2008-12-16 | Sony Corporation | Method of forming a catalyst layer on the barrier layer of a conductive interconnect of a semiconductor device |
US7422975B2 (en) | 2005-08-18 | 2008-09-09 | Sony Corporation | Composite inter-level dielectric structure for an integrated circuit |
US8586468B2 (en) | 2005-08-24 | 2013-11-19 | Sony Corporation | Integrated circuit chip stack employing carbon nanotube interconnects |
US7251799B2 (en) | 2005-08-30 | 2007-07-31 | Sony Corporation | Metal interconnect structure for integrated circuits and a design rule therefor |
US8368220B2 (en) * | 2005-10-18 | 2013-02-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Anchored damascene structures |
US7622378B2 (en) * | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US7892985B1 (en) | 2005-11-15 | 2011-02-22 | Novellus Systems, Inc. | Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US8110493B1 (en) | 2005-12-23 | 2012-02-07 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
JP4788415B2 (ja) * | 2006-03-15 | 2011-10-05 | ソニー株式会社 | 半導体装置の製造方法 |
US7923376B1 (en) | 2006-03-30 | 2011-04-12 | Novellus Systems, Inc. | Method of reducing defects in PECVD TEOS films |
US20070232046A1 (en) * | 2006-03-31 | 2007-10-04 | Koji Miyata | Damascene interconnection having porous low K layer with improved mechanical properties |
US7955531B1 (en) * | 2006-04-26 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Patterned light extraction sheet and method of making same |
US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
US7851384B2 (en) * | 2006-06-01 | 2010-12-14 | Applied Materials, Inc. | Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film |
US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8053375B1 (en) * | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
JP5142538B2 (ja) | 2007-01-26 | 2013-02-13 | 株式会社東芝 | 半導体装置の製造方法 |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
US20080206997A1 (en) * | 2007-02-26 | 2008-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device |
US7833692B2 (en) * | 2007-03-12 | 2010-11-16 | Brewer Science Inc. | Amine-arresting additives for materials used in photolithographic processes |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
US20090075491A1 (en) * | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
CN102789975B (zh) * | 2008-03-06 | 2015-10-14 | 东京毅力科创株式会社 | 用于固化多孔低介电常数电介质膜的方法 |
US20090226694A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
US7858533B2 (en) * | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
US7977256B2 (en) * | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US20090226695A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | Method for treating a dielectric film with infrared radiation |
US8029971B2 (en) * | 2008-03-13 | 2011-10-04 | International Business Machines Corporation | Photopatternable dielectric materials for BEOL applications and methods for use |
JP4423379B2 (ja) * | 2008-03-25 | 2010-03-03 | 合同会社先端配線材料研究所 | 銅配線、半導体装置および銅配線の形成方法 |
US8236684B2 (en) | 2008-06-27 | 2012-08-07 | Applied Materials, Inc. | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
US8895942B2 (en) * | 2008-09-16 | 2014-11-25 | Tokyo Electron Limited | Dielectric treatment module using scanning IR radiation source |
US20100068897A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric treatment platform for dielectric film deposition and curing |
US20100067886A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Ir laser optics system for dielectric treatment module |
US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
KR101042191B1 (ko) * | 2009-08-17 | 2011-06-20 | 백경물산주식회사 | 차량용 전기전자제품에서의 전원 제어 방법 |
US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
US8764581B2 (en) * | 2010-08-13 | 2014-07-01 | Nike, Inc. | Systems and methods for manufacturing a golf ball |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
CN102427019A (zh) * | 2011-06-17 | 2012-04-25 | 上海华力微电子有限公司 | 超低介电常数薄膜实现高性能金属-氧化物-金属的方法 |
CN105097658B (zh) * | 2014-05-15 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、互连层和互连层的制作方法 |
US9613906B2 (en) * | 2014-06-23 | 2017-04-04 | GlobalFoundries, Inc. | Integrated circuits including modified liners and methods for fabricating the same |
EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
JP6801705B2 (ja) * | 2016-03-11 | 2020-12-16 | 株式会社村田製作所 | 複合基板及び複合基板の製造方法 |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
US11753517B2 (en) | 2019-12-12 | 2023-09-12 | Raytheon Company | Dispensable polyimide aerogel prepolymer, method of making the same, method of using the same, and substrate comprising patterned polyimide aerogel |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980064089A (ko) * | 1996-12-13 | 1998-10-07 | 윌리엄비.켐플러 | 다공성 유전체 금속화 방법 |
US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US30297A (en) * | 1860-10-09 | Improved light for cars | ||
US52125A (en) * | 1866-01-23 | Improved curb-bit | ||
JPS5412500A (en) | 1977-06-30 | 1979-01-30 | Matsushita Electric Ind Co Ltd | Film material providing high electrostatic capacitance |
JP2624254B2 (ja) | 1987-05-22 | 1997-06-25 | 東京応化工業株式会社 | シリカ系被膜の膜質改善方法 |
MY112945A (en) | 1994-12-20 | 2001-10-31 | Ibm | Electronic devices comprising dielectric foamed polymers |
US5828315A (en) | 1995-10-05 | 1998-10-27 | Ncr Corporation | Method of sending messages to electronic price labels prior to their identification with price look-up items |
KR100440418B1 (ko) * | 1995-12-12 | 2004-10-20 | 텍사스 인스트루먼츠 인코포레이티드 | 저압,저온의반도체갭충전처리방법 |
US5994375A (en) * | 1996-02-12 | 1999-11-30 | Berlex Laboratories, Inc. | Benzamidine derivatives substituted by amino acid and hydroxy acid derivatives and their use as anti-coagulants |
US5767014A (en) | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
US5962113A (en) | 1996-10-28 | 1999-10-05 | International Business Machines Corporation | Integrated circuit device and process for its manufacture |
US6448331B1 (en) | 1997-07-15 | 2002-09-10 | Asahi Kasei Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
WO1999003926A1 (fr) * | 1997-07-15 | 1999-01-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation |
US6350704B1 (en) * | 1997-10-14 | 2002-02-26 | Micron Technology Inc. | Porous silicon oxycarbide integrated circuit insulator |
AU3055599A (en) | 1998-04-01 | 1999-10-25 | Asahi Kasei Kogyo Kabushiki Kaisha | Method of manufacturing interconnection structural body |
US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
TW389988B (en) * | 1998-05-22 | 2000-05-11 | United Microelectronics Corp | Method for forming metal interconnect in dielectric layer with low dielectric constant |
US6417115B1 (en) | 1998-05-26 | 2002-07-09 | Axeclis Technologies, Inc. | Treatment of dielectric materials |
RU2195050C2 (ru) * | 1998-06-05 | 2002-12-20 | Джорджиэ Тек Рисеч Копэрейшн | Способ получения пористой изоляционной композиции (варианты), композиция, используемая для получения пористого изоляционного материала (варианты), и полупроводниковое устройство |
US6093636A (en) * | 1998-07-08 | 2000-07-25 | International Business Machines Corporation | Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets |
WO2000018847A1 (fr) * | 1998-09-25 | 2000-04-06 | Catalysts & Chemicals Industries Co., Ltd. | Fluide de revetement permettant de former une pellicule protectrice a base de silice dotee d'une faible permittivite et substrat recouvert d'une pellicule protectrice de faible permittivite |
US6528426B1 (en) | 1998-10-16 | 2003-03-04 | Texas Instruments Incorporated | Integrated circuit interconnect and method |
US6171945B1 (en) * | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
EP1141128B1 (en) | 1998-11-24 | 2006-04-12 | Dow Global Technologies Inc. | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom |
JP3888794B2 (ja) * | 1999-01-27 | 2007-03-07 | 松下電器産業株式会社 | 多孔質膜の形成方法、配線構造体及びその形成方法 |
US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US6342454B1 (en) | 1999-11-16 | 2002-01-29 | International Business Machines Corporation | Electronic devices with dielectric compositions and method for their manufacture |
US6107357A (en) | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
US6329062B1 (en) | 2000-02-29 | 2001-12-11 | Novellus Systems, Inc. | Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits |
US6495479B1 (en) * | 2000-05-05 | 2002-12-17 | Honeywell International, Inc. | Simplified method to produce nanoporous silicon-based films |
US6352917B1 (en) * | 2000-06-21 | 2002-03-05 | Chartered Semiconductor Manufacturing Ltd. | Reversed damascene process for multiple level metal interconnects |
US6271273B1 (en) | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
JP2002050687A (ja) * | 2000-08-03 | 2002-02-15 | Seiko Epson Corp | 半導体装置の製造方法 |
US6391932B1 (en) | 2000-08-08 | 2002-05-21 | Shipley Company, L.L.C. | Porous materials |
EP1314193A2 (en) | 2000-08-21 | 2003-05-28 | Dow Global Technologies Inc. | Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
KR100841597B1 (ko) | 2000-09-13 | 2008-06-26 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 전자 디바이스 제조 |
TW588072B (en) | 2000-10-10 | 2004-05-21 | Shipley Co Llc | Antireflective porogens |
US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
US20030054115A1 (en) | 2001-09-14 | 2003-03-20 | Ralph Albano | Ultraviolet curing process for porous low-K materials |
DE20116246U1 (de) | 2001-10-04 | 2002-03-28 | Textilma Ag | Rotations-Siebdruckvorrichtung für textile Flächengebilde |
-
2001
- 2001-09-08 KR KR1020037003612A patent/KR100841597B1/ko active IP Right Grant
- 2001-09-08 WO PCT/US2001/028208 patent/WO2002023629A2/en active Application Filing
- 2001-09-08 CN CNB018155650A patent/CN1302532C/zh not_active Expired - Fee Related
- 2001-09-08 JP JP2002527574A patent/JP2004509468A/ja active Pending
- 2001-09-08 AU AU2001288954A patent/AU2001288954A1/en not_active Abandoned
- 2001-09-08 US US09/948,388 patent/US6596467B2/en not_active Expired - Lifetime
- 2001-09-08 EP EP01968725A patent/EP1323189A2/en not_active Ceased
- 2001-09-12 TW TW090122533A patent/TW587307B/zh not_active IP Right Cessation
-
2002
- 2002-11-07 US US10/289,932 patent/US6667147B2/en not_active Expired - Lifetime
-
2003
- 2003-03-22 US US10/394,072 patent/US20030186168A1/en not_active Abandoned
- 2003-03-22 US US10/394,342 patent/US7163780B2/en not_active Expired - Lifetime
-
2004
- 2004-02-19 US US10/782,657 patent/US7294453B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980064089A (ko) * | 1996-12-13 | 1998-10-07 | 윌리엄비.켐플러 | 다공성 유전체 금속화 방법 |
US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
CN1528016A (zh) | 2004-09-08 |
US6596467B2 (en) | 2003-07-22 |
US20020030297A1 (en) | 2002-03-14 |
AU2001288954A1 (en) | 2002-03-26 |
CN1302532C (zh) | 2007-02-28 |
US20030186168A1 (en) | 2003-10-02 |
US20040161922A1 (en) | 2004-08-19 |
EP1323189A2 (en) | 2003-07-02 |
US20030059723A1 (en) | 2003-03-27 |
JP2004509468A (ja) | 2004-03-25 |
US7294453B2 (en) | 2007-11-13 |
US6667147B2 (en) | 2003-12-23 |
US7163780B2 (en) | 2007-01-16 |
WO2002023629A2 (en) | 2002-03-21 |
US20030186169A1 (en) | 2003-10-02 |
TW587307B (en) | 2004-05-11 |
WO2002023629A3 (en) | 2002-10-31 |
KR20030038737A (ko) | 2003-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100841597B1 (ko) | 전자 디바이스 제조 | |
US20020123240A1 (en) | Electronic device manufacture | |
JP4758949B2 (ja) | 多孔性有機ポリシリカ誘電体形成用の組成物 | |
KR20110014540A (ko) | 전자 디바이스 제조 | |
EP1632956A1 (en) | Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films | |
CN1236479C (zh) | 在半导体器件上形成多孔介电材料层的方法 | |
US6818552B2 (en) | Method for eliminating reaction between photoresist and OSG | |
US6831005B1 (en) | Electron beam process during damascene processing | |
EP1186026A1 (en) | Fabrication method for self-aligned cu diffusion barrier in an integrated circuit | |
EP0970519A1 (en) | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation | |
EP1186016A1 (en) | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices | |
JP2005517784A (ja) | オルガノシロキサン | |
US20040052948A1 (en) | Electronic device manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130603 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140609 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150519 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160517 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170522 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180516 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190515 Year of fee payment: 12 |