JP2010107976A - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP2010107976A
JP2010107976A JP2009229378A JP2009229378A JP2010107976A JP 2010107976 A JP2010107976 A JP 2010107976A JP 2009229378 A JP2009229378 A JP 2009229378A JP 2009229378 A JP2009229378 A JP 2009229378A JP 2010107976 A JP2010107976 A JP 2010107976A
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JP
Japan
Prior art keywords
thin film
wiring
layer
film transistor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009229378A
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English (en)
Japanese (ja)
Other versions
JP2010107976A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Kengo Akimoto
健吾 秋元
Shigeki Komori
茂樹 小森
Hideki Uoji
秀貴 魚地
Tomoya Futamura
智哉 二村
Takahiro Kasahara
崇廣 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009229378A priority Critical patent/JP2010107976A/ja
Publication of JP2010107976A publication Critical patent/JP2010107976A/ja
Publication of JP2010107976A5 publication Critical patent/JP2010107976A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009229378A 2008-10-03 2009-10-01 表示装置 Withdrawn JP2010107976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009229378A JP2010107976A (ja) 2008-10-03 2009-10-01 表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008259063 2008-10-03
JP2009229378A JP2010107976A (ja) 2008-10-03 2009-10-01 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013192573A Division JP5766246B2 (ja) 2008-10-03 2013-09-18 半導体装置

Publications (2)

Publication Number Publication Date
JP2010107976A true JP2010107976A (ja) 2010-05-13
JP2010107976A5 JP2010107976A5 (enExample) 2012-02-02

Family

ID=42073577

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2009229378A Withdrawn JP2010107976A (ja) 2008-10-03 2009-10-01 表示装置
JP2013192573A Active JP5766246B2 (ja) 2008-10-03 2013-09-18 半導体装置
JP2015120826A Active JP6010188B2 (ja) 2008-10-03 2015-06-16 表示装置及び表示モジュール
JP2016180092A Active JP6317406B2 (ja) 2008-10-03 2016-09-15 半導体装置及び表示装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2013192573A Active JP5766246B2 (ja) 2008-10-03 2013-09-18 半導体装置
JP2015120826A Active JP6010188B2 (ja) 2008-10-03 2015-06-16 表示装置及び表示モジュール
JP2016180092A Active JP6317406B2 (ja) 2008-10-03 2016-09-15 半導体装置及び表示装置

Country Status (5)

Country Link
US (3) US7989815B2 (enExample)
JP (4) JP2010107976A (enExample)
KR (4) KR101803720B1 (enExample)
TW (2) TWI469298B (enExample)
WO (1) WO2010038819A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140068762A (ko) 2012-11-28 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20140068765A (ko) 2012-11-28 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR20140082934A (ko) 2012-12-25 2014-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
JP2015115428A (ja) * 2013-12-11 2015-06-22 凸版印刷株式会社 静電気保護素子及びそれを用いた静電気保護回路
KR20150122166A (ko) 2013-02-25 2015-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
TWI607210B (zh) * 2012-02-10 2017-12-01 美商克萊譚克公司 於半導體裝置檢查系統中用於切趾的檢查系統
JP2019204960A (ja) * 2013-04-04 2019-11-28 株式会社半導体エネルギー研究所 半導体装置
JP2021040140A (ja) * 2010-09-10 2021-03-11 株式会社半導体エネルギー研究所 半導体装置
KR20220110719A (ko) * 2010-09-13 2022-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 파워 다이오드 및 정류기

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KR101762112B1 (ko) 2008-09-19 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정표시장치
KR101273913B1 (ko) 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101803720B1 (ko) 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
WO2011048925A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011052258A1 (ja) * 2009-10-27 2011-05-05 シャープ株式会社 表示パネル及び表示装置
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011086905A1 (ja) * 2010-01-13 2011-07-21 シャープ株式会社 アクティブマトリクス基板及びその製造方法
JP5494115B2 (ja) * 2010-03-29 2014-05-14 ソニー株式会社 表示装置及び電子機器
TWI410722B (zh) * 2010-09-02 2013-10-01 Au Optronics Corp 液晶顯示單元
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102223582B1 (ko) 2011-07-22 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
TWI470808B (zh) 2011-12-28 2015-01-21 Au Optronics Corp 半導體元件及其製作方法
DE102012205415B4 (de) * 2012-04-03 2024-11-14 Bayerische Motoren Werke Aktiengesellschaft Fahrzeug
KR20140059576A (ko) * 2012-11-08 2014-05-16 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 디스플레이 장치
KR102105485B1 (ko) * 2012-11-23 2020-04-29 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR20220145922A (ko) 2012-12-25 2022-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6083089B2 (ja) * 2013-03-27 2017-02-22 株式会社Ｊｏｌｅｄ 半導体装置、表示装置および電子機器
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102053410B1 (ko) * 2013-04-24 2019-12-09 삼성디스플레이 주식회사 박막 트랜지스터 및 유기 발광 표시 장치
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
CN103995407B (zh) * 2014-05-08 2016-08-24 京东方科技集团股份有限公司 阵列基板和显示面板
WO2016063169A1 (en) 2014-10-23 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
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CN105470388B (zh) * 2015-11-18 2018-09-28 深圳市华星光电技术有限公司 有机半导体薄膜晶体管及其制作方法
KR102517092B1 (ko) * 2017-08-02 2023-04-04 삼성전자주식회사 가요성 디스플레이 패널을 포함하는 전자 장치
CN107274851A (zh) * 2017-08-14 2017-10-20 京东方科技集团股份有限公司 显示面板及其驱动方法和显示装置
US11287707B2 (en) * 2018-11-15 2022-03-29 Sharp Kabushiki Kaisha Array substrate, array substrate body component, and display device

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