JP2009212509A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP2009212509A
JP2009212509A JP2009026277A JP2009026277A JP2009212509A JP 2009212509 A JP2009212509 A JP 2009212509A JP 2009026277 A JP2009026277 A JP 2009026277A JP 2009026277 A JP2009026277 A JP 2009026277A JP 2009212509 A JP2009212509 A JP 2009212509A
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insulating film
film
semiconductor
semiconductor layer
substrate
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Japanese (ja)
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JP2009212509A5 (enExample
Inventor
Mitsuhiro Ichijo
充弘 一條
Kenichi Okazaki
健一 岡崎
Tetsuhiro Tanaka
哲弘 田中
Takashi Otsuki
高志 大槻
Kiyoharu Yasumoto
清治 保本
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009026277A priority Critical patent/JP2009212509A/ja
Publication of JP2009212509A publication Critical patent/JP2009212509A/ja
Publication of JP2009212509A5 publication Critical patent/JP2009212509A5/ja
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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JP2009026277A 2008-02-08 2009-02-06 半導体装置の作製方法 Withdrawn JP2009212509A (ja)

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US (2) US7855153B2 (enExample)
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KR (2) KR20090086340A (enExample)
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Cited By (3)

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WO2014129519A1 (en) * 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
JP2017175127A (ja) * 2016-03-16 2017-09-28 株式会社半導体エネルギー研究所 剥離方法
US10189048B2 (en) 2013-12-12 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus

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EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
JP5367323B2 (ja) * 2008-07-23 2013-12-11 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
US9041841B2 (en) * 2008-10-10 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor having enhanced backside illumination quantum efficiency
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9721868B2 (en) * 2009-07-30 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Three dimensional integrated circuit (3DIC) having a thermally enhanced heat spreader embedded in a substrate
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
TWI508183B (zh) * 2010-01-29 2015-11-11 Prime View Int Co Ltd 形成含氧半導體薄膜電晶體之方法
WO2011132548A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2466426A1 (en) * 2010-12-16 2012-06-20 Innovation & Infinity Global Corp. Diffusion barrier structure, transparent conductive structure and method for making the same
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US8785995B2 (en) * 2011-05-16 2014-07-22 International Business Machines Corporation Ferroelectric semiconductor transistor devices having gate modulated conductive layer
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US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
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US20130153856A1 (en) * 2011-12-15 2013-06-20 U.S. Government as represented by the Secretary of the Amry Infrared led device with isolation and method of making
US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
JP5982179B2 (ja) 2012-05-28 2016-08-31 株式会社東芝 半導体発光装置およびその製造方法
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JP5709810B2 (ja) * 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
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US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
KR102135453B1 (ko) * 2013-05-24 2020-07-20 삼성디스플레이 주식회사 접착필름 및 이를 이용해 제조된 유기전계발광 표시장치
TWI732735B (zh) 2013-12-03 2021-07-11 日商半導體能源研究所股份有限公司 剝離裝置以及疊層體製造裝置
US9142546B2 (en) * 2013-12-05 2015-09-22 Northrop Grumman Systems Corporation Method of making bipolar junction transistor by forming base epitaxy region on etched opening in DARC layer
US9136332B2 (en) 2013-12-10 2015-09-15 Taiwan Semiconductor Manufacturing Company Limited Method for forming a nanowire field effect transistor device having a replacement gate
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US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
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