JP2008294384A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2008294384A
JP2008294384A JP2007162684A JP2007162684A JP2008294384A JP 2008294384 A JP2008294384 A JP 2008294384A JP 2007162684 A JP2007162684 A JP 2007162684A JP 2007162684 A JP2007162684 A JP 2007162684A JP 2008294384 A JP2008294384 A JP 2008294384A
Authority
JP
Japan
Prior art keywords
lead
pad
semiconductor device
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007162684A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008294384A5 (enExample
Inventor
Kuniharu Muto
邦治 武藤
Toshiyuki Namita
俊幸 波多
Hitohisa Sato
仁久 佐藤
Hirotake Oka
浩偉 岡
Yasushi Ikeda
靖 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2007162684A priority Critical patent/JP2008294384A/ja
Priority to US12/057,328 priority patent/US7667307B2/en
Priority to TW97112537A priority patent/TW200905829A/zh
Priority to CN2012100431624A priority patent/CN102543771A/zh
Priority to CN2008100935954A priority patent/CN101295687B/zh
Priority to KR1020080039531A priority patent/KR20080096483A/ko
Publication of JP2008294384A publication Critical patent/JP2008294384A/ja
Priority to US12/652,311 priority patent/US20100105174A1/en
Publication of JP2008294384A5 publication Critical patent/JP2008294384A5/ja
Priority to US13/276,995 priority patent/US20120034742A1/en
Priority to US13/846,730 priority patent/US20130207252A1/en
Pending legal-status Critical Current

Links

Classifications

    • H10W70/457
    • H10W72/00
    • H10W70/411
    • H10W70/424
    • H10W70/466
    • H10W70/481
    • H10W72/016
    • H10W72/0711
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247Connecting the strap to a bond pad of the item
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411Insulated-gate bipolar transistors [IGBT]
    • H10D12/441Vertical IGBTs
    • H10D12/461Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/665Vertical DMOS [VDMOS] FETs having edge termination structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/668Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251Source or drain electrodes for field-effect devices
    • H10D64/256Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • H10W46/00
    • H10W46/103
    • H10W46/401
    • H10W46/607
    • H10W70/60
    • H10W72/07336
    • H10W72/07337
    • H10W72/07533
    • H10W72/07535
    • H10W72/07552
    • H10W72/07553
    • H10W72/07554
    • H10W72/07633
    • H10W72/07652
    • H10W72/07653
    • H10W72/325
    • H10W72/352
    • H10W72/353
    • H10W72/527
    • H10W72/534
    • H10W72/536
    • H10W72/5363
    • H10W72/537
    • H10W72/5438
    • H10W72/5475
    • H10W72/5522
    • H10W72/5524
    • H10W72/59
    • H10W72/627
    • H10W72/652
    • H10W72/853
    • H10W72/871
    • H10W72/884
    • H10W72/923
    • H10W72/926
    • H10W72/952
    • H10W74/00
    • H10W90/736
    • H10W90/756
    • H10W90/766

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
JP2007162684A 2007-04-27 2007-06-20 半導体装置 Pending JP2008294384A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2007162684A JP2008294384A (ja) 2007-04-27 2007-06-20 半導体装置
US12/057,328 US7667307B2 (en) 2007-04-27 2008-03-27 Semiconductor device
TW97112537A TW200905829A (en) 2007-04-27 2008-04-07 Semiconductor device
CN2012100431624A CN102543771A (zh) 2007-04-27 2008-04-25 半导体器件
CN2008100935954A CN101295687B (zh) 2007-04-27 2008-04-25 半导体器件
KR1020080039531A KR20080096483A (ko) 2007-04-27 2008-04-28 반도체 장치
US12/652,311 US20100105174A1 (en) 2007-04-27 2010-01-05 Semiconductor device
US13/276,995 US20120034742A1 (en) 2007-04-27 2011-10-19 Semiconductor device
US13/846,730 US20130207252A1 (en) 2007-04-27 2013-03-18 Semiconductor Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007118833 2007-04-27
JP2007162684A JP2008294384A (ja) 2007-04-27 2007-06-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012193043A Division JP2013016837A (ja) 2007-04-27 2012-09-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2008294384A true JP2008294384A (ja) 2008-12-04
JP2008294384A5 JP2008294384A5 (enExample) 2011-07-14

Family

ID=39885945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007162684A Pending JP2008294384A (ja) 2007-04-27 2007-06-20 半導体装置

Country Status (5)

Country Link
US (4) US7667307B2 (enExample)
JP (1) JP2008294384A (enExample)
KR (1) KR20080096483A (enExample)
CN (2) CN102543771A (enExample)
TW (1) TW200905829A (enExample)

Cited By (23)

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Publication number Priority date Publication date Assignee Title
JP2010251374A (ja) * 2009-04-10 2010-11-04 Renesas Electronics Corp 半導体装置およびその製造方法
WO2011030368A1 (ja) * 2009-09-08 2011-03-17 パナソニック株式会社 半導体装置とその製造方法
WO2011064817A1 (ja) * 2009-11-26 2011-06-03 パナソニック株式会社 半導体装置とその製造方法
JP2012015202A (ja) * 2010-06-29 2012-01-19 On Semiconductor Trading Ltd 半導体装置およびその製造方法
WO2012066803A1 (ja) * 2010-11-16 2012-05-24 三菱電機株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP2013102233A (ja) * 2013-02-25 2013-05-23 Renesas Electronics Corp 半導体装置
WO2014050278A1 (ja) * 2012-09-26 2014-04-03 日立オートモティブシステムズ株式会社 パワー半導体モジュール
JP2018081982A (ja) * 2016-11-15 2018-05-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6437701B1 (ja) * 2018-05-29 2018-12-12 新電元工業株式会社 半導体モジュール
JP2019186321A (ja) * 2018-04-05 2019-10-24 ローム株式会社 半導体装置
JP2019207999A (ja) * 2018-09-19 2019-12-05 株式会社加藤電器製作所 半導体モジュール
JP2019207998A (ja) * 2018-09-19 2019-12-05 株式会社加藤電器製作所 半導体モジュール
US10777489B2 (en) 2018-05-29 2020-09-15 Katoh Electric Co., Ltd. Semiconductor module
JP2021044532A (ja) * 2019-03-25 2021-03-18 ローム株式会社 電子装置、電子装置の製造方法、およびリードフレーム
JP2021068783A (ja) * 2019-10-21 2021-04-30 ルネサスエレクトロニクス株式会社 半導体装置
JP2021090074A (ja) * 2016-09-27 2021-06-10 パナソニックIpマネジメント株式会社 半導体装置
EP4099382A2 (en) 2021-06-02 2022-12-07 Renesas Electronics Corporation Semiconductor device
WO2023026389A1 (ja) * 2021-08-25 2023-03-02 株式会社オートネットワーク技術研究所 車載用の半導体スイッチ装置
WO2023026388A1 (ja) * 2021-08-25 2023-03-02 株式会社オートネットワーク技術研究所 車載用の半導体スイッチ装置
JP2023139229A (ja) * 2018-10-09 2023-10-03 ローム株式会社 半導体装置
US11955440B2 (en) 2018-09-12 2024-04-09 Rohm Co., Ltd. Semiconductor device with detection conductor
WO2024116933A1 (ja) * 2022-12-02 2024-06-06 ローム株式会社 半導体装置、および、半導体装置の製造方法
WO2024190426A1 (ja) * 2023-03-15 2024-09-19 ローム株式会社 半導体装置および車両

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JP4248953B2 (ja) 2003-06-30 2009-04-02 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4989437B2 (ja) * 2007-12-14 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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WO2010004609A1 (ja) * 2008-07-07 2010-01-14 三菱電機株式会社 電力用半導体装置
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CN102163562B (zh) * 2011-03-18 2012-09-19 聚信科技有限公司 一种功率半导体管芯的安装方法和同步降压转换器
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JP5943795B2 (ja) * 2012-09-26 2016-07-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP6374225B2 (ja) * 2014-06-02 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
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JP6520437B2 (ja) * 2015-06-12 2019-05-29 富士電機株式会社 半導体装置
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JP6901902B2 (ja) * 2017-04-27 2021-07-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20190109061A1 (en) * 2017-10-11 2019-04-11 Texas Instruments Incorporated Edge Bend for Isolation Packages
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CN110001436A (zh) * 2019-03-07 2019-07-12 浙江叶尼塞电气有限公司 一种全新大功率充电桩智能防反装置
US10630080B1 (en) * 2019-06-28 2020-04-21 Alpha And Omega Semiconductor (Cayman) Ltd. Super-fast transient response (STR) AC/DC Converter for high power density charging application
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JP7359581B2 (ja) * 2019-07-10 2023-10-11 株式会社デンソー 半導体装置
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JP7438071B2 (ja) * 2020-09-15 2024-02-26 株式会社東芝 半導体装置
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US12224230B2 (en) * 2021-09-16 2025-02-11 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices and methods of manufacturing semiconductor devices
CN115881762A (zh) * 2021-09-26 2023-03-31 苏州东微半导体股份有限公司 Igbt功率器件
CN114496966A (zh) * 2021-12-31 2022-05-13 绍兴中芯集成电路制造股份有限公司 条带结构、连接片结构以及封装结构
CN115295510A (zh) * 2022-09-06 2022-11-04 日月新半导体(威海)有限公司 半导体分立器件封装件
CN118763060A (zh) * 2024-09-02 2024-10-11 广东气派科技有限公司 一种mosfet的封装结构

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