JP2008294384A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2008294384A JP2008294384A JP2007162684A JP2007162684A JP2008294384A JP 2008294384 A JP2008294384 A JP 2008294384A JP 2007162684 A JP2007162684 A JP 2007162684A JP 2007162684 A JP2007162684 A JP 2007162684A JP 2008294384 A JP2008294384 A JP 2008294384A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- pad
- semiconductor device
- gate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10W70/457—
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- H10W72/00—
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- H10W70/411—
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- H10W70/424—
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- H10W70/466—
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- H10W70/481—
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- H10W72/016—
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- H10W72/0711—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/40247—Connecting the strap to a bond pad of the item
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
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- H10W46/00—
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- H10W46/103—
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- H10W46/401—
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- H10W46/607—
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- H10W70/60—
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- H10W72/07336—
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- H10W72/07337—
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Landscapes
- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007162684A JP2008294384A (ja) | 2007-04-27 | 2007-06-20 | 半導体装置 |
| US12/057,328 US7667307B2 (en) | 2007-04-27 | 2008-03-27 | Semiconductor device |
| TW97112537A TW200905829A (en) | 2007-04-27 | 2008-04-07 | Semiconductor device |
| CN2012100431624A CN102543771A (zh) | 2007-04-27 | 2008-04-25 | 半导体器件 |
| CN2008100935954A CN101295687B (zh) | 2007-04-27 | 2008-04-25 | 半导体器件 |
| KR1020080039531A KR20080096483A (ko) | 2007-04-27 | 2008-04-28 | 반도체 장치 |
| US12/652,311 US20100105174A1 (en) | 2007-04-27 | 2010-01-05 | Semiconductor device |
| US13/276,995 US20120034742A1 (en) | 2007-04-27 | 2011-10-19 | Semiconductor device |
| US13/846,730 US20130207252A1 (en) | 2007-04-27 | 2013-03-18 | Semiconductor Device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007118833 | 2007-04-27 | ||
| JP2007162684A JP2008294384A (ja) | 2007-04-27 | 2007-06-20 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012193043A Division JP2013016837A (ja) | 2007-04-27 | 2012-09-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008294384A true JP2008294384A (ja) | 2008-12-04 |
| JP2008294384A5 JP2008294384A5 (enExample) | 2011-07-14 |
Family
ID=39885945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007162684A Pending JP2008294384A (ja) | 2007-04-27 | 2007-06-20 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US7667307B2 (enExample) |
| JP (1) | JP2008294384A (enExample) |
| KR (1) | KR20080096483A (enExample) |
| CN (2) | CN102543771A (enExample) |
| TW (1) | TW200905829A (enExample) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010251374A (ja) * | 2009-04-10 | 2010-11-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| WO2011030368A1 (ja) * | 2009-09-08 | 2011-03-17 | パナソニック株式会社 | 半導体装置とその製造方法 |
| WO2011064817A1 (ja) * | 2009-11-26 | 2011-06-03 | パナソニック株式会社 | 半導体装置とその製造方法 |
| JP2012015202A (ja) * | 2010-06-29 | 2012-01-19 | On Semiconductor Trading Ltd | 半導体装置およびその製造方法 |
| WO2012066803A1 (ja) * | 2010-11-16 | 2012-05-24 | 三菱電機株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
| JP2013102233A (ja) * | 2013-02-25 | 2013-05-23 | Renesas Electronics Corp | 半導体装置 |
| WO2014050278A1 (ja) * | 2012-09-26 | 2014-04-03 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
| JP2018081982A (ja) * | 2016-11-15 | 2018-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6437701B1 (ja) * | 2018-05-29 | 2018-12-12 | 新電元工業株式会社 | 半導体モジュール |
| JP2019186321A (ja) * | 2018-04-05 | 2019-10-24 | ローム株式会社 | 半導体装置 |
| JP2019207999A (ja) * | 2018-09-19 | 2019-12-05 | 株式会社加藤電器製作所 | 半導体モジュール |
| JP2019207998A (ja) * | 2018-09-19 | 2019-12-05 | 株式会社加藤電器製作所 | 半導体モジュール |
| US10777489B2 (en) | 2018-05-29 | 2020-09-15 | Katoh Electric Co., Ltd. | Semiconductor module |
| JP2021044532A (ja) * | 2019-03-25 | 2021-03-18 | ローム株式会社 | 電子装置、電子装置の製造方法、およびリードフレーム |
| JP2021068783A (ja) * | 2019-10-21 | 2021-04-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2021090074A (ja) * | 2016-09-27 | 2021-06-10 | パナソニックIpマネジメント株式会社 | 半導体装置 |
| EP4099382A2 (en) | 2021-06-02 | 2022-12-07 | Renesas Electronics Corporation | Semiconductor device |
| WO2023026389A1 (ja) * | 2021-08-25 | 2023-03-02 | 株式会社オートネットワーク技術研究所 | 車載用の半導体スイッチ装置 |
| WO2023026388A1 (ja) * | 2021-08-25 | 2023-03-02 | 株式会社オートネットワーク技術研究所 | 車載用の半導体スイッチ装置 |
| JP2023139229A (ja) * | 2018-10-09 | 2023-10-03 | ローム株式会社 | 半導体装置 |
| US11955440B2 (en) | 2018-09-12 | 2024-04-09 | Rohm Co., Ltd. | Semiconductor device with detection conductor |
| WO2024116933A1 (ja) * | 2022-12-02 | 2024-06-06 | ローム株式会社 | 半導体装置、および、半導体装置の製造方法 |
| WO2024190426A1 (ja) * | 2023-03-15 | 2024-09-19 | ローム株式会社 | 半導体装置および車両 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4248953B2 (ja) | 2003-06-30 | 2009-04-02 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP4989437B2 (ja) * | 2007-12-14 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7646089B2 (en) * | 2008-05-15 | 2010-01-12 | Fujitsu Limited | Semiconductor package, method for manufacturing a semiconductor package, an electronic device, method for manufacturing an electronic device |
| WO2010004609A1 (ja) * | 2008-07-07 | 2010-01-14 | 三菱電機株式会社 | 電力用半導体装置 |
| US7884444B2 (en) * | 2008-07-22 | 2011-02-08 | Infineon Technologies Ag | Semiconductor device including a transformer on chip |
| JP2010080925A (ja) * | 2008-08-26 | 2010-04-08 | Sanyo Electric Co Ltd | 半導体装置 |
| JP5341435B2 (ja) * | 2008-08-26 | 2013-11-13 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| US8581378B2 (en) * | 2009-09-29 | 2013-11-12 | Panasonic Corporation | Semiconductor device and method of manufacturing the same |
| JP5714916B2 (ja) * | 2011-01-12 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5866774B2 (ja) * | 2011-02-25 | 2016-02-17 | 富士通株式会社 | 半導体装置の製造方法 |
| US8354733B2 (en) * | 2011-03-04 | 2013-01-15 | International Rectifier Corporation | IGBT power semiconductor package having a conductive clip |
| CN102163562B (zh) * | 2011-03-18 | 2012-09-19 | 聚信科技有限公司 | 一种功率半导体管芯的安装方法和同步降压转换器 |
| US9230928B2 (en) * | 2011-09-12 | 2016-01-05 | Conexant Systems, Inc. | Spot plated leadframe and IC bond pad via array design for copper wire |
| US20160277017A1 (en) * | 2011-09-13 | 2016-09-22 | Fsp Technology Inc. | Snubber circuit |
| CN102361025B (zh) * | 2011-10-28 | 2012-10-03 | 深圳市气派科技有限公司 | 一种高密度集成电路封装结构、封装方法以及集成电路 |
| JP5943795B2 (ja) * | 2012-09-26 | 2016-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| DE102012019391A1 (de) * | 2012-10-02 | 2014-04-03 | Infineon Technologies Ag | Leitungshalbleitergehäuse mit redundanter Funktionalität |
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| US9515172B2 (en) * | 2014-01-28 | 2016-12-06 | Samsung Electronics Co., Ltd. | Semiconductor devices having isolation insulating layers and methods of manufacturing the same |
| KR102199986B1 (ko) * | 2014-02-17 | 2021-01-08 | 엘지이노텍 주식회사 | 발광 장치 |
| US9780061B2 (en) * | 2014-05-26 | 2017-10-03 | Infineon Technologies Ag | Molded chip package and method of manufacturing the same |
| JP6374225B2 (ja) * | 2014-06-02 | 2018-08-15 | ルネサスエレクトロニクス株式会社 | 半導体装置および電子装置 |
| US9852928B2 (en) * | 2014-10-06 | 2017-12-26 | Infineon Technologies Ag | Semiconductor packages and modules with integrated ferrite material |
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| US20190109061A1 (en) * | 2017-10-11 | 2019-04-11 | Texas Instruments Incorporated | Edge Bend for Isolation Packages |
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| JP6962457B2 (ja) * | 2018-04-19 | 2021-11-05 | 日産自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
| DE102018207308B4 (de) * | 2018-05-09 | 2020-07-02 | Infineon Technologies Ag | Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung |
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| CN110544675A (zh) * | 2018-05-29 | 2019-12-06 | 株式会社加藤电器制作所 | 半导体模块 |
| CN110001436A (zh) * | 2019-03-07 | 2019-07-12 | 浙江叶尼塞电气有限公司 | 一种全新大功率充电桩智能防反装置 |
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| JP7359581B2 (ja) * | 2019-07-10 | 2023-10-11 | 株式会社デンソー | 半導体装置 |
| JP7156230B2 (ja) * | 2019-10-02 | 2022-10-19 | 株式会社デンソー | 半導体モジュール |
| JP7334655B2 (ja) * | 2020-03-06 | 2023-08-29 | 三菱電機株式会社 | 半導体装置 |
| JP7339933B2 (ja) * | 2020-09-11 | 2023-09-06 | 株式会社東芝 | 半導体装置 |
| JP7438071B2 (ja) * | 2020-09-15 | 2024-02-26 | 株式会社東芝 | 半導体装置 |
| CN111933606B (zh) * | 2020-09-16 | 2021-08-03 | 苏州日月新半导体有限公司 | 集成电路装置及其封装方法 |
| JP7422696B2 (ja) * | 2021-02-09 | 2024-01-26 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7630321B2 (ja) * | 2021-03-22 | 2025-02-17 | ローム株式会社 | 半導体装置 |
| US12224230B2 (en) * | 2021-09-16 | 2025-02-11 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
| CN115881762A (zh) * | 2021-09-26 | 2023-03-31 | 苏州东微半导体股份有限公司 | Igbt功率器件 |
| CN114496966A (zh) * | 2021-12-31 | 2022-05-13 | 绍兴中芯集成电路制造股份有限公司 | 条带结构、连接片结构以及封装结构 |
| CN115295510A (zh) * | 2022-09-06 | 2022-11-04 | 日月新半导体(威海)有限公司 | 半导体分立器件封装件 |
| CN118763060A (zh) * | 2024-09-02 | 2024-10-11 | 广东气派科技有限公司 | 一种mosfet的封装结构 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005026294A (ja) * | 2003-06-30 | 2005-01-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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| JPH03274755A (ja) * | 1990-03-26 | 1991-12-05 | Hitachi Ltd | 樹脂封止半導体装置とその製造方法 |
| KR100266726B1 (ko) * | 1995-09-29 | 2000-09-15 | 기타지마 요시토시 | 리드프레임과 이 리드프레임을 갖춘 반도체장치 |
| US6692989B2 (en) * | 1999-10-20 | 2004-02-17 | Renesas Technology Corporation | Plastic molded type semiconductor device and fabrication process thereof |
| US6084264A (en) | 1998-11-25 | 2000-07-04 | Siliconix Incorporated | Trench MOSFET having improved breakdown and on-resistance characteristics |
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2010
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Also Published As
| Publication number | Publication date |
|---|---|
| US20120034742A1 (en) | 2012-02-09 |
| US20080265386A1 (en) | 2008-10-30 |
| CN102543771A (zh) | 2012-07-04 |
| US20100105174A1 (en) | 2010-04-29 |
| TW200905829A (en) | 2009-02-01 |
| KR20080096483A (ko) | 2008-10-30 |
| US7667307B2 (en) | 2010-02-23 |
| CN101295687B (zh) | 2012-05-16 |
| CN101295687A (zh) | 2008-10-29 |
| US20130207252A1 (en) | 2013-08-15 |
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