TW200905829A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW200905829A
TW200905829A TW97112537A TW97112537A TW200905829A TW 200905829 A TW200905829 A TW 200905829A TW 97112537 A TW97112537 A TW 97112537A TW 97112537 A TW97112537 A TW 97112537A TW 200905829 A TW200905829 A TW 200905829A
Authority
TW
Taiwan
Prior art keywords
wire
pad
wafer
source
semiconductor device
Prior art date
Application number
TW97112537A
Other languages
English (en)
Chinese (zh)
Inventor
Kuniharu Muto
Toshiyuki Hata
Hiroshi Sato
Hiroi Oka
Osamu Ikeda
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200905829A publication Critical patent/TW200905829A/zh

Links

Classifications

    • H10W70/457—
    • H10W72/00—
    • H10W70/411—
    • H10W70/424—
    • H10W70/466—
    • H10W70/481—
    • H10W72/016—
    • H10W72/0711—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10W46/00—
    • H10W46/103—
    • H10W46/401—
    • H10W46/607—
    • H10W70/60—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/07533—
    • H10W72/07535—
    • H10W72/07552—
    • H10W72/07553—
    • H10W72/07554—
    • H10W72/07633—
    • H10W72/07652—
    • H10W72/07653—
    • H10W72/325—
    • H10W72/352—
    • H10W72/353—
    • H10W72/527—
    • H10W72/534—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/537—
    • H10W72/5438—
    • H10W72/5475—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/627—
    • H10W72/652—
    • H10W72/853—
    • H10W72/871—
    • H10W72/884—
    • H10W72/923—
    • H10W72/926—
    • H10W72/952—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—
    • H10W90/766—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
TW97112537A 2007-04-27 2008-04-07 Semiconductor device TW200905829A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007118833 2007-04-27
JP2007162684A JP2008294384A (ja) 2007-04-27 2007-06-20 半導体装置

Publications (1)

Publication Number Publication Date
TW200905829A true TW200905829A (en) 2009-02-01

Family

ID=39885945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97112537A TW200905829A (en) 2007-04-27 2008-04-07 Semiconductor device

Country Status (5)

Country Link
US (4) US7667307B2 (enExample)
JP (1) JP2008294384A (enExample)
KR (1) KR20080096483A (enExample)
CN (2) CN102543771A (enExample)
TW (1) TW200905829A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI585978B (zh) * 2012-10-17 2017-06-01 瑞薩電子股份有限公司 Semiconductor device and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI585978B (zh) * 2012-10-17 2017-06-01 瑞薩電子股份有限公司 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US20120034742A1 (en) 2012-02-09
US20080265386A1 (en) 2008-10-30
CN102543771A (zh) 2012-07-04
US20100105174A1 (en) 2010-04-29
KR20080096483A (ko) 2008-10-30
US7667307B2 (en) 2010-02-23
CN101295687B (zh) 2012-05-16
CN101295687A (zh) 2008-10-29
US20130207252A1 (en) 2013-08-15
JP2008294384A (ja) 2008-12-04

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