WO2011030368A1 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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Publication number
WO2011030368A1
WO2011030368A1 PCT/JP2009/004423 JP2009004423W WO2011030368A1 WO 2011030368 A1 WO2011030368 A1 WO 2011030368A1 JP 2009004423 W JP2009004423 W JP 2009004423W WO 2011030368 A1 WO2011030368 A1 WO 2011030368A1
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Prior art keywords
pad
semiconductor device
region
pressing
conductive ribbon
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PCT/JP2009/004423
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English (en)
French (fr)
Inventor
藤岡知恵
横江稔志
熊野大地
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パナソニック株式会社
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Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to JP2010535134A priority Critical patent/JP5553766B2/ja
Priority to PCT/JP2009/004423 priority patent/WO2011030368A1/ja
Priority to US12/934,018 priority patent/US8378467B2/en
Publication of WO2011030368A1 publication Critical patent/WO2011030368A1/ja

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Definitions

  • the semiconductor chip and the external terminal are bonded using a strip-shaped Al (aluminum ribbon), and the electric resistance of the bonded portion is reduced. Some have been reduced.
  • a plurality of Al ribbons are connected in order to increase the cross-sectional area of the Al ribbon.
  • the depth of the unevenness is preferably 0.2 to 3 ⁇ m.
  • FIG. 3 illustrates a structure of a semiconductor device in Embodiment 1.
  • a plan view showing an internal structure of a semiconductor device in a second embodiment 8A and 8B illustrate a method for manufacturing a semiconductor device in Embodiment 3.
  • FIG. 1 is a diagram showing a structure of a semiconductor device according to the first embodiment.
  • FIG. 1A shows an outline of a semiconductor device in which a semiconductor chip made of MOS-FET is mounted on a package called SO8P as a semiconductor device.
  • FIG. 1B is a plan view
  • FIG. 1B is an internal structural view of FIG. 1A
  • FIG. 1C is a cross-sectional view taken along line XX ′ of FIG.
  • the semiconductor device 200 has an outer lead terminal 202 protruding from the sealing resin 201, and is connected to an external circuit or a wiring board by the outer lead terminal 202.
  • the lead frame 301 is formed of a source lead 303 and a gate lead 304 which are disposed so as to be opposed to the die pad 302 and the die pad. A plurality of leads are drawn out from the die pad 302, and these leads serve as drain leads 305.
  • the source lead 303 has a pad-shaped portion 303a in which a plurality of leads are integrated on the die pad side.
  • the die pad 302 portion, the pad shape portion 303a of the source lead 303, and the tip portion of the gate lead 304 on the die pad side are bent and are slightly higher than the outer lead portion.
  • the height of the die pad 302 and the height of the pad-shaped portion 303a of the source lead 303 and the tip of the gate lead 304 on the die pad side may be the same, but the die pad 302 may be slightly lower.
  • the material of the lead frame 301 is mainly copper (Cu) or a copper alloy.
  • the die pad portion is usually plated with silver (Ag), and the pad shape portion 303a of the source lead may be plated with no copper (Cu), but may be plated with silver (Ag) or nickel (Ni). You may give it.
  • the tip of the gate lead 304 on the die pad side is usually subjected to silver (Ag) plating.
  • a power MOS-FET semiconductor chip 306 is mounted and bonded to the die pad 302 using a die bond material such as solder or silver (Ag) paste.
  • the die bond material used for bonding is not limited to solder or silver (Ag) paste, but is limited to these materials as long as the drain electrode on the back surface of the semiconductor chip 306 and the die pad 302 are electrically conductive. None happen.
  • a source pad 307 connected to the source electrode and a gate pad 308 connected to the gate electrode are formed on the semiconductor chip 306, a source pad 307 connected to the source electrode and a gate pad 308 connected to the gate electrode are formed.
  • Each of the source pad 307 and the gate pad 308 has a rectangular shape, and the source pad 307 is formed larger than the gate pad 308.
  • the gate pad 307 on the semiconductor chip 306 and the pad-shaped portion 303a of the gate lead 303 are connected by a gold (Au) wire.
  • the source pad 307 on the semiconductor chip 306 and the source lead 303 disposed opposite to the source pad 307 are connected by an aluminum ribbon 309, and the bonding to the source pad 307 and the pad-shaped portion 303a is performed by ultrasonic waves. This is done by bonding.
  • the die pad 302 on which the semiconductor chip 306 is mounted is provided with a pressing region 310a without the semiconductor chip 306 or the die bond material and without the aluminum ribbon 309 being disposed.
  • the die pad 302 can be fixed by the pressing region 310a during ultrasonic bonding.
  • the pad-shaped portion 303a of the source lead 303 is provided with holding regions 310b to which the aluminum ribbon 309 is not connected at both ends of the connection portion.
  • the lead frame 301 is firmly held during the aluminum ribbon bonding, and strong ultrasonic waves are effectively transmitted to the lead frame 301 and the aluminum ribbon 309 to be firmly fixed.
  • the sealing resin 201 is formed including the pressing regions 310a and 310b, so that the bonding area between the lead frame 301 and the sealing resin 201 is increased. Since the aluminum ribbon 309 can be firmly fixed by the sealing resin 201 without laminating the aluminum ribbon 309, the conductive ribbon is used for the electrical connection of the terminals while maintaining the reliability of the semiconductor chip. It is possible to easily reduce the resistance of the joint portion.
  • a rough surface area having irregularities with a depth of about 0.2 to 3 ⁇ m is formed in the holding areas 310a and 310b, thereby making contact with the sealing resin 201. Since the area can be increased and the adhesion force of the sealing resin 201 to the lead frame 301 can be increased, the aluminum ribbon 309 can be more firmly fixed, and at the same time, the entry of moisture and the like from the outside can be reduced. Can do.
  • the aluminum ribbon 309 is securely attached.
  • the adhesion of the sealing resin 201 can be increased and the aluminum ribbon 309 can be stably connected.
  • the adhesion of the sealing resin 201 can be further increased, and the aluminum ribbon 309 can be stably connected.
  • these holding areas take into consideration the dimensions of the holding jig, the precision of conveyance, etc., and the formation dimensions of the rough surface area where the effect can be expected.
  • the semiconductor device requires a region of at least 0.4 mm ⁇ 0.4 mm square, and this region should not have a die bond material protruding. If the die bond material protrudes, the die bond material protruding with the holding jig will be fixed together, and there is a possibility of peeling at the interface between the chip 306 and the die pad 302 due to the influence of ultrasonic waves. , There is a possibility of inhibiting the formation of the rough surface region.
  • the die bond material that spreads substantially concentrically around the die pad 302 is difficult to spread on the protrusion 601 protruding from the die pad 302. Further, in order to make it more effective to prevent the die pad material from spreading to the protruding portion 601, a treatment such as providing an uneven portion on the surface of the protruding portion 601 or applying a film partially is performed. Good. Therefore, it is not necessary to consider the protrusion of the die bond material to the protrusion 601. Therefore, there is no need to worry about the peeling phenomenon at the interface between the semiconductor chip and the die pad, which occurs when the protruding portion of the die bond material is fixed with a holding jig and ultrasonic bonding is performed.
  • a power MOS-FET is formed on a silicon wafer, and then a semiconductor chip 306 cut into individual pieces in a dicing process is manufactured (step 1).
  • the die pad 302, the pad-shaped portion 303a of the source lead 303, and the tip of the gate lead 304 on the die pad side are bent by pre-bending using the lead frame 301 in which the die pad shape and each lead shape are formed.
  • a semiconductor chip 306 is mounted on the die pad portion using a die bond material such as silver (Ag) paste (step 2).
  • the semiconductor device manufactured by the manufacturing method as described above by providing the die pad 302 portion and the pad-shaped portion 303a with the pressing regions 310a and 310b for ultrasonic bonding of the aluminum ribbon 309, strong ultrasonic waves are generated. It is possible to effectively transmit and suppress the resonance of the lead frame 301 as much as possible, and the aluminum ribbon 309 can be securely bonded. Further, since it is not necessary to laminate the aluminum ribbon 309 and perform ultrasonic bonding a plurality of times, stress on the semiconductor chip 306 can be reduced, and the reliability of the semiconductor chip 306 can be ensured. Further, the rough surface area formed by pressing the holding jig 501 makes it possible to increase the contact area between the lead frame and the resin, and to improve the adhesion to the resin. Thereby, a semiconductor device with high bonding reliability can be obtained.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

　導電性リボン３０９を用いて電気的接続を行うリードのパッド形状部分３０３ａやダイパッド３０２等に押さえ領域３１０ａ，３１０ｂを付加することにより、リボンボンドの際に押さえ領域３１０ａ，３１０ｂを押さえて固定しながら強力な超音波を印加することができるため、導電性リボン３０９を強固に接合しながら接合部分の低抵抗化を図ることができる。又、導電性リボン３０９の接合強度が向上するため、導電性リボン３０９を積層化する必要がなくなり、容易に超音波による半導体チップ３０６に対するストレスを低減することができる。

Description

半導体装置とその製造方法
　本発明は、導電性リボンを介して端子間の電気的接続を行う半導体装置とその製造方法に関するものである。
　ＭＯＳ－ＦＥＴ、ＩＧＢＴなど電力用の半導体チップを実装したパワー半導体装置においては、高出力化、高耐圧化の要求の高まりから、それらに対応する半導体チップやそれを搭載するパッケージが種々提案されている。
　従来の半導体装置とその製造方法としては、半導体装置に大電流を低抵抗で流すために、半導体チップと外部端子とを帯状のＡｌ（アルミニウムリボン）を用いて接合し、接合部分の電気抵抗を低減しているものがある。近年では、さらなる低抵抗化と共に安定した接続を実現することを目的として、Ａｌリボンの断面積を大きくするためにＡｌリボンを複数層化して接続しているものがあった。
　図４は従来の半導体装置における素子電極と外部電極との接続構成を示す図である。
　図４において、パワー半導体デバイス１０１は、リードフレーム１０２上に半導体チップ１０３が搭載されている。半導体チップ１０３の表面にはソース電極１０３ａが形成され、その上には比較的薄い導電性リボン１０５が設けられ、超音波ボンディングによりソース電極１０３ａに接合している。その上に、導電性リボン１０５に比べ厚い導電性リボン１０６が設けられ、ソース電極１０３ａとの間に導電性リボン１０５を挟み超音波ボンディングで接合されている。導電性リボン１０６のもう一方の側も同様にリードフレーム１０２の外部端子となるリード１０８との間に導電性リボン１０７を挟み超音波ボンディングで接合している（例えば、特許文献１参照）。
特開２００８－１１７８２５号公報
　しかしながら、前記従来の構成では、Ａｌリボンの断面積を大きくして接合強度を向上させることができるが、接合部に比較的薄い導電性リボン１０５を先に超音波ボンディングで接合した後、導電性リボン１０５に比べ厚い導電性リボン１０６を超音波ボンディングするため、超音波ボンディングの際に半導体チップ１０３が受ける加熱や振動によるストレスを２回以上受けることになり、半導体チップ１０３自体の信頼性が低下するというい問題点があった。又、種類の異なる導電性リボンを用いるため、超音波ボンディング工程が煩雑になるとともに、装置や設備が複雑になり、生産コストが上昇するという課題を有していた。
　本発明は、前記従来の課題を解決するもので、半導体チップの信頼性を維持しながら、端子の電気的接続に導電性リボンを用いて容易に接合部分の低抵抗化を図ることを目的とする。
　前記従来の目的を達成するために、本発明の半導体装置は、半導体チップと、前記半導体チップに設けられる複数の電極パッドと、前記半導体チップを搭載するダイパッドと、パッド形状部分を備え、外部端子となる複数のリードと、前記電極パッドと前記パッド形状部分とを電気的に接続する導電性リボンと、前記ダイパッドの前記半導体チップが搭載される領域及び前記導電性リボンが接続される領域外の少なくとも一部に設けられる第１の押さえ領域と、前記パッド形状部分の前記導電性リボンが接続される領域外の少なくとも一部に設けられる第２の押さえ領域と、前記半導体チップ，前記導電性リボン，前記パッド形状部分，前記第１の押さえ領域及び前記第２の押さえ領域を封止する封止樹脂とを有し、前記導電性リボンの超音波ボンディングの際に前記第１の押さえ領域及び前記第２の押さえ領域を押圧固定することを特徴とする。
　又、前記電極パッドと前記パッド形状部分との電気的接続の一部が、ワイヤーあるいはバンプを用いて行われても良い。
　又、前記第１の押さえ領域として前記ダイパッドに突出部を形成しても良い。
　又、前記第１の押さえ領域及び前記第２の押さえ領域が表面に凹凸が形成される粗面領域であることが好ましい。
　又、前記凹凸の深さが０．２～３μｍであることが好ましい。
　又、前記粗面領域が矩形であり、１辺の長さが少なくとも０．４ｍｍ以上であることが好ましい。
　更に、本発明の半導体装置の製造方法は、前記半導体装置を製造する際の前記導電性リボンの超音波ボンディングが、前記電極パッドと前記パッド形状部分との間に導電性リボン配置する工程と、前記第１の押さえ領域及び前記第２の押さえ領域を押圧固定する工程と、前記超音波ボンディングにより前記導電性リボンを前記電極パッドと前記パッド形状部分とに接続する工程とを有することを特徴とする。
　又、前記押圧固定により、前記第１の押さえ領域及び前記第２の押さえ領域に、表面に凹凸が形成される粗面領域を形成することが好ましい。
　又、前記凹凸の深さが０．２～３μｍであることが好ましい。
　又、前記粗面領域が矩形であり、１辺の長さが少なくとも０．４ｍｍ以上であることが好ましい。
　以上により、半導体チップの信頼性を維持しながら、端子の電気的接続に導電性リボンを用いて容易に接合部分の低抵抗化を図ることができる。
　以上のように、導電性リボンを用いて電気的接続を行うリードのパッド形状部分やダイパッド等に押さえ領域を付加することにより、リボンボンドの際に押さえ領域を押さえて固定しながら強力な超音波を印加することができるため、導電性リボンを強固に接合しながら接合部分の低抵抗化を図ることができる。又、導電性リボンの接合強度が向上するため、導電性リボンを積層化する必要がなくなり、容易に超音波による半導体チップに対するストレスを低減することができる。又、押さえ領域を含めて樹脂封止するため、樹脂の密着性が向上し、樹脂により導電性リボンの接合強度を更に向上させることができる。
実施の形態１における半導体装置の構造を示す図 実施の形態２における半導体装置の内部構造を示す平面図 実施の形態３における半導体装置の製造方法を説明する図 従来の半導体装置における素子電極と外部電極との接続構成を示す図
　以下本発明の実施の形態について、図面を参照しながら説明する。
　（実施の形態１）
　図１は実施の形態１における半導体装置の構造を示す図であり、図１（ａ）は、半導体装置としてＳＯ８Ｐと称されるパッケージにＭＯＳ－ＦＥＴからなる半導体チップが実装された半導体装置の外形平面図、図１（ｂ）は図１（ａ）の内部構造図であり、図１（ｃ）は図１（ｂ）のＸ－Ｘ’線に沿った断面図である。
　図１において、半導体装置２００は封止樹脂２０１からアウターリード端子２０２が突出しており、アウターリード端子２０２によって外部回路や配線基板と接続される。
　リードフレーム３０１は、ダイパッド３０２とダイパッドと対向して隔離配置されているソースリード３０３及びゲートリード３０４から形成されている。ダイパッド３０２からは、複数のリードが引き出されており、これらリードはドレインリード３０５としての役割を果たす。ソースリード３０３には、ダイパッド側に複数のリードが一体となったパッド形状部分３０３ａが存在している。
　ダイパッド３０２部分及び、ソースリード３０３のパッド形状部分３０３ａ、ゲートリード３０４のダイパッド側の先端部は、曲げ加工がなされておりアウターリード部分に比べて僅かに高い位置にある。ダイパッド３０２部分の高さとソースリード３０３のパッド形状部分３０３ａ、ゲートリード３０４におけるダイパッド側の先端部の高さは、同じで良いが、ダイパッド３０２部分が僅かに低くなっていても良い。
　リードフレーム３０１の材質は、主に銅（Ｃｕ）又は銅合金となっている。又、ダイパッド部分には通常銀（Ａｇ）メッキがなされており、ソースリードのパッド形状部分３０３ａはメッキをせず銅（Ｃｕ）無垢でも良いが、銀（Ａｇ）メッキ又はニッケル（Ｎｉ）メッキを施しても良い。ゲートリード３０４のダイパッド側の先端部には、通常銀（Ａｇ）メッキが施されている。
　ダイパッド３０２上には、例えば、パワー系ＭＯＳ－ＦＥＴの半導体チップ３０６が搭載されており、半田や銀（Ａｇ）ペーストなどのダイスボンド材を用いてダイパッド３０２上に接合されている。接合に使用されるダイスボンド材は、半田や銀（Ａｇ）ペースト以外でも、半導体チップ３０６裏面のドレイン電極とダイパッド３０２とが電気的に導通が取れる材料で有れば、これらの材料に限定されることはない。
　又、半導体チップ３０６上にはソース電極に接続されたソースパッド３０７とゲート電極に接続されたゲートパッド３０８とが形成されている。ソースパッド３０７とゲートパッド３０８はそれぞれ矩形の形状であり、ソースパッド３０７はゲートパッド３０８に比べ大きく形成されている。半導体チップ３０６上のゲートパッド３０７とゲートリード３０３のパッド形状部分３０３ａは金（Ａｕ）ワイヤーにより接続されている。半導体チップ３０６上のソースパッド３０７と、ソースパッド３０７に対向して配置されているソースリード３０３とはアルミリボン３０９により接続されており、ソースパッド３０７及びパッド形状部分３０３ａへの接合は、超音波ボンディングにより行われる。接合に超音波を用いるため、ダイパッド３０２の半導体チップ３０６が搭載された周辺端の少なくとも一部には、半導体チップ３０６やダイスボンド材がなく、アルミリボン３０９も配されない押さえ領域３１０ａが備えられ、超音波ボンディング時にダイパッド３０２を押さえ領域３１０ａで固定できる構造である。更に、ソースリード３０３のパッド形状部分３０３ａには、アルミリボン３０９の接続されていない押さえ領域３１０ｂが接続箇所の両端等に設けられている。
　リードフレーム３０１に押さえ領域３１０ａ，３１０ｂを設けることにより、アルミリボンボンドの際にリードフレーム３０１を強固に保持して強力な超音波をリードフレーム３０１及びアルミリボン３０９に有効に伝えて強固な固着を行うことができると共に、押さえ領域３１０ａ，３１０ｂを新規に付加した場合には、押さえ領域３１０ａ，３１０ｂを含めて封止樹脂２０１を形成することにより、リードフレーム３０１と封止樹脂２０１の接着面積が増大し、アルミリボン３０９を積層しなくても封止樹脂２０１によりアルミリボン３０９を強固に固定することができるため、半導体チップの信頼性を維持しながら、端子の電気的接続に導電性リボンを用いて容易に接合部分の低抵抗化を図ることができる。更に、リードフレーム３０１を押圧固定して保持する際に、押さえ領域３１０ａ，３１０ｂに深さ０．２～３μｍ程度の凹凸をもった粗面領域を形成することにより、封止樹脂２０１との接触面積を増大させることができ、封止樹脂２０１のリードフレーム３０１への密着力を大きくすることができるため、よりアルミリボン３０９を強固に固定でき、同時に外部からの湿気などの浸入を低減することができる。
　つまり、ダイパッド３０２下面部分からの吸引や、リードフレーム３０１の桟部分を固定してボンディングがなされるが、強力な超音波を有効に伝え、リードフレーム３０１の共振を極力抑える必要があるアルミリボン３０９のボンディングにおいて、従来一般的に用いられているリードフレーム３０１の固定方法では、強力な超音波を有効に伝え、十分にリードフレーム３０１を固定する事ができなかった。そのため、アルミリボン３０９とソースパッド３０７及びソースリード３０３ａとの界面の接合強度不足が発生したり、アルミリボン３０９の未着が発生したりするといった不具合が生じる可能性があった。
　そこで、押さえ領域３１０ａ，３１０ｂを設けたダイパッド３０２及びソースリード３０３のパッド形状部分３０３ａでリードフレーム３０１を強固に固定した状態でアルミリボン３０９の超音波ボンディングを行うことによって、アルミリボン309を確実に接着すると同時に、封止樹脂２０１の接触面積を増大させることにより、封止樹脂２０１の密着力を増し、アルミリボン３０９を安定して接続することができる。更に、粗面領域を形成することにより、より封止樹脂２０１の密着力を増し、アルミリボン３０９を安定して接続することが可能となる。
　更に、ボンダーの押さえ治具で確実に固定するために、これらの押さえ領域は押さえ冶具の寸法及び、搬送などの精度、効果の期待できる粗面領域の形成寸法を考慮して、一般的なパワー半導体装置では、最低でも０．４ｍｍ×０．４ｍｍ平方の領域を必要とし、この領域には、ダイスボンド材のはみ出しなどがあってはならない。もし、ダイスボンド材のはみ出しがあった場合、押さえ治具にてはみ出したダイスボンド材ごと固定することになり、超音波の影響でチップ３０６とダイパッド３０２界面で剥離が生じる可能性があり、更に、粗面領域の形成を阻害する可能性がある。
　又、アルミリボン３０９はアルミを帯状に形成したもので大電流を低抵抗で伝える役割を果たすものであり、同様の役割を果たす導電性の帯状の素材であれば、これに限定される事はない。
（実施の形態２）
　図２は実施の形態２における半導体装置の内部構造を示す平面図である。図２において、図１と同じ構成要素については同じ符号を用い、説明を省略する。
　図２において、ダイパッド３０２に突起部６０１が備えられた構成をとる。突起部６０１は、超音波ボンディングの際の押さえ領域６０２の役割を果たしており、突起部６０１をアルミリボン３０９のボンダーの押さえ治具にて、強固に固定し、押圧による深さ０．２～３μｍ程度の凹凸をもった粗面領域を形成することが可能となる。尚、突起部６０１においても、最低でも０．４ｍｍ×０．４ｍｍ平方の領域が必要となる。この構成をとることで、ダイパッド３０２上に押さえ領域を設ける必要がなくなり、代わりに突起部分６０１を押さえ治具により押さえる事ができる。これにより、ダイパッド３０２上に搭載される半導体チップ３０６のサイズが０．４ｍｍ×０．４ｍｍの押さえ領域の制約を受ける事がなく、設計の自由度を増す事が可能となる。
　更に、ダイパッド３０２を中心として略同心円状に広がるダイスボンド材はダイパッド３０２から突出した突起部６０１には拡がり難くなる。また、突起部６０１へのダイパッド材の拡がりを阻止することをより効果的にするために、突起部６０１の表面に凹凸部を設けたり部分的に被膜を施したりするなどの処理をしてもよい。よって、ダイボンド材の突起部６０１へのはみ出しを考慮する必要がなくなる。そのため、ダイスボンド材のはみ出した部分を押さえ治具にて固定して超音波ボンディングすることよって発生する、半導体チップとダイパッド界面の剥離現象を懸念する必要が無くなる。
　このように、ダイパッド３０２に突起部６０１を設け、突起部６０１を押さえ治具で固定して超音波ボンディングを実施することで、ＭＯＳ－ＦＥＴパワー系等の半導体装置において、強力な超音波を有効に伝え、リードフレーム３０１の共振を極力抑えることが可能となり、アルミリボン３０９を確実に接着する事ができる。更に、押さえ治具の押圧により形成される粗面領域により、樹脂との密着性を高める事ができる。これにより、アルミリボン３０９の接合信頼性のより高い半導体装置を得ることができる。
（実施の形態３）
　図３は実施の形態３における半導体装置の製造方法を説明する図であり、図３（ａ）は、本発明の半導体装置の製造方法を示す工程フロー図、図３（ｂ）は、図３（ａ）の工程フロー図における導電性リボンボンディング工程を説明する平面図、図３（ｃ）は、図３（ｂ）のＹ－Ｙ’線に沿った断面図である。
　図３において、まず、シリコンウエハにパワー系ＭＯＳ－ＦＥＴを形成した後、ダイシング工程にて個片にカットされた半導体チップ３０６を作製する（ステップ１）。次に、ダイパッド形状及び各リード形状が形成されたリードフレーム３０１を用いて、プリベンドにより、ダイパッド３０２及び、ソースリード３０３のパッド形状部分３０３ａ、ゲートリード３０４におけるダイパッド側の先端部の曲げ加工がなされる。その後、このダイパッド部分に、銀（Ａｇ）ペーストなどのダイスボンド材を用いて、半導体チップ３０６を搭載する（ステップ２）。次に、半導体チップ３０６上のソースパッド３０７と、ソースリード３０３のリードが一体となったパッド形状部分３０３ａにアルミリボン３０９が超音波を用いてボンディングされる（ステップ３）。この際、ダイパッド３０２及びソースリード３０３に設けられた押さえ領域３１０ａ，３１０ｂは、ボンダーの押さえ治具５０１により強固に固定されてから、ボンディングがなされる。同時に、押さえ治具の押圧により、深さ０．２～３μｍ程度の凹凸のある粗面領域を形成しても良い。続いて、半導体チップ３０６上ゲートパッド３０８部分とゲートリード３０４とが金（Ａｕ）ワイヤーにより接続される（ステップ４）。アルミリボンボンディングと金ワイヤボンディングは、どちらの工程を先に行っても構わないが、アルミリボン３０９をボンディングする際の押さえ方法や強力な超音波を用いるため、アルミリボンボンディングを先に行うのが望ましい。
　次に、封止樹脂２０１により、ダイパッド３０２及び半導体チップ３０６、アルミリボン３０９、金ワイヤ、インナーリード部分が封止され（ステップ５）、その後、メッキ工程（ステップ６）、マーキング工程を経て（ステップ７）、良・不良の判別を行う検査工程を行い（ステップ８）、半導体装置が完成する。
　以上のような製造方法で製造された半導体装置によれば、ダイパッド３０２部分及び、パッド形状部分３０３ａにアルミリボン３０９の超音波ボンディング用の押さえ領域３１０ａ，３１０ｂを備えることにより、強力な超音波を有効に伝え、リードフレーム３０１の共振を極力抑えることが可能となり、アルミリボン３０９を確実に接着する事ができる。又、アルミリボン３０９を積層して超音波ボンディングを複数回行う必要がなくなるので、半導体チップ３０６へのストレスを低減でき、半導体チップ３０６の信頼性を確保することができる。更に、押さえ治具５０１の押圧により形成される粗面領域により、リードフレームと樹脂との接触面積を大きく取る事が可能となり、樹脂との密着性を高める事ができる。これにより、接合信頼性の高い半導体装置を得ることができる。
　以上の各実施の形態における説明では、半導体装置としてパワー系半導体装置を例に説明したが、パワー系半導体装置に限らず、導電性リボンにより端子－リード間を電気的に接続するリードやダイパッドの一部又は全部に押さえ領域を設けることにより、様々な半導体装置に対して実現可能である。又、端子の数も任意であり、導電性リボン，ワイヤー，バンプ等の接続形式の組み合わせも任意である。又、上記説明では、半導体チップ裏面とダイパッド間で直接電気的接続を設けていたが、必ずしも裏面での接続を要するものではない。
　本発明は、半導体チップの信頼性を維持しながら、端子の電気的接続に導電性リボンを用いて容易に接合部分の低抵抗化を図ることができ、導電性リボンを介して端子間の電気的接続を行う半導体装置とその製造方法等に有用である。

Claims (10)

  1. 　半導体チップと、
    　前記半導体チップに設けられる複数の電極パッドと、
    　前記半導体チップを搭載するダイパッドと、
    　パッド形状部分を備え、外部端子となる複数のリードと、
    　前記電極パッドと前記パッド形状部分とを電気的に接続する導電性リボンと、
    　前記ダイパッドの前記半導体チップが搭載される領域及び前記導電性リボンが接続される領域外の少なくとも一部に設けられる第１の押さえ領域と、
    　前記パッド形状部分の前記導電性リボンが接続される領域外の少なくとも一部に設けられる第２の押さえ領域と、
    　前記半導体チップ，前記導電性リボン，前記パッド形状部分，前記第１の押さえ領域及び前記第２の押さえ領域を封止する封止樹脂と
    を有し、前記導電性リボンの超音波ボンディングの際に前記第１の押さえ領域及び前記第２の押さえ領域を押圧固定することを特徴とする半導体装置。
  2. 　前記電極パッドと前記パッド形状部分との電気的接続の一部が、ワイヤーあるいはバンプを用いて行われることを特徴とする請求項１記載の半導体装置。
  3. 　前記第１の押さえ領域として前記ダイパッドに突出部を形成することを特徴とする請求項１記載の半導体装置。
  4. 　前記第１の押さえ領域及び前記第２の押さえ領域が表面に凹凸が形成される粗面領域であることを特徴とする請求項１記載の半導体装置。
  5. 　前記凹凸の深さが０．２～３μｍであることを特徴とする請求項４記載の半導体装置。
  6. 　前記粗面領域が矩形であり、１辺の長さが少なくとも０．４ｍｍ以上であることを特徴とする請求項４記載の半導体装置。
  7. 　請求項１記載の半導体装置を製造する際の前記導電性リボンの超音波ボンディングが、
    　前記電極パッドと前記パッド形状部分との間に導電性リボン配置する工程と、
    　前記第１の押さえ領域及び前記第２の押さえ領域を押圧固定する工程と、
    　前記超音波ボンディングにより前記導電性リボンを前記電極パッドと前記パッド形状部分とに接続する工程と
    を有することを特徴とする半導体装置の製造方法。
  8. 　前記押圧固定により、前記第１の押さえ領域及び前記第２の押さえ領域に、表面に凹凸が形成される粗面領域を形成することを特徴とする請求項７記載の半導体装置の製造方法。
  9. 　前記凹凸の深さが０．２～３μｍであることを特徴とする請求項８記載の半導体装置の製造方法。
  10. 　前記粗面領域が矩形であり、１辺の長さが少なくとも０．４ｍｍ以上であることを特徴とする請求項８記載の半導体装置の製造方法。
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JP2012023204A (ja) * 2010-07-14 2012-02-02 On Semiconductor Trading Ltd 半導体装置およびその製造方法
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JP5535077B2 (ja) * 2009-09-17 2014-07-02 パナソニック株式会社 半導体装置とその製造方法
JP2012015202A (ja) * 2010-06-29 2012-01-19 On Semiconductor Trading Ltd 半導体装置およびその製造方法

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