JPWO2011030368A1 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JPWO2011030368A1 JPWO2011030368A1 JP2010535134A JP2010535134A JPWO2011030368A1 JP WO2011030368 A1 JPWO2011030368 A1 JP WO2011030368A1 JP 2010535134 A JP2010535134 A JP 2010535134A JP 2010535134 A JP2010535134 A JP 2010535134A JP WO2011030368 A1 JPWO2011030368 A1 JP WO2011030368A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000003825 pressing Methods 0.000 claims description 81
- 239000011347 resin Substances 0.000 claims description 36
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- 238000007789 sealing Methods 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 59
- 229910052782 aluminium Inorganic materials 0.000 description 59
- 239000000463 material Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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Abstract
Description
図1は実施の形態1における半導体装置の構造を示す図であり、図1(a)は、半導体装置としてSO8Pと称されるパッケージにMOS−FETからなる半導体チップが実装された半導体装置の外形平面図、図1(b)は図1(a)の内部構造図であり、図1(c)は図1(b)のX−X’線に沿った断面図である。
(実施の形態2)
図2は実施の形態2における半導体装置の内部構造を示す平面図である。図2において、図1と同じ構成要素については同じ符号を用い、説明を省略する。
(実施の形態3)
図3は実施の形態3における半導体装置の製造方法を説明する図であり、図3(a)は、本発明の半導体装置の製造方法を示す工程フロー図、図3(b)は、図3(a)の工程フロー図における導電性リボンボンディング工程を説明する平面図、図3(c)は、図3(b)のY−Y’線に沿った断面図である。
図1は実施の形態1における半導体装置の構造を示す図であり、図1(a)は、半導体装置としてSO8Pと称されるパッケージにMOS−FETからなる半導体チップが実装された半導体装置の外形平面図、図1(b)は図1(a)の内部構造図であり、図1(c)は図1(b)のX−X’線に沿った断面図である。
(実施の形態2)
図2は実施の形態2における半導体装置の内部構造を示す平面図である。図2において、図1と同じ構成要素については同じ符号を用い、説明を省略する。
(実施の形態3)
図3は実施の形態3における半導体装置の製造方法を説明する図であり、図3(a)は、本発明の半導体装置の製造方法を示す工程フロー図、図3(b)は、図3(a)の工程フロー図における導電性リボンボンディング工程を説明する平面図、図3(c)は、図3(b)のY−Y’線に沿った断面図である。
201 封止樹脂
202 アウターリード端子
301 リードフレーム
302 ダイパッド
303 ソースリード
303a パッド形状部分
304 ゲートリード
305 ドレインリード
306 半導体チップ
307 ソースパッド
308 ゲートパッド
309 アルミリボン
310a 押さえ領域
310b 押さえ領域
501 押さえ治具
601 突起部
602 押さえ領域
101 パワー半導体デバイス
102 リードフレーム
103 半導体チップ
103a ソース電極
105 導電性リボン
106 導電性リボン
107 導電性リボン
108 リード
Claims (10)
- 半導体チップと、
前記半導体チップに設けられる複数の電極パッドと、
前記半導体チップを搭載するダイパッドと、
パッド形状部分を備え、外部端子となる複数のリードと、
前記電極パッドと前記パッド形状部分とを電気的に接続する導電性リボンと、
前記ダイパッドの前記半導体チップが搭載される領域及び前記導電性リボンが接続される領域外の少なくとも一部に設けられる第1の押さえ領域と、
前記パッド形状部分の前記導電性リボンが接続される領域外の少なくとも一部に設けられる第2の押さえ領域と、
前記半導体チップ,前記導電性リボン,前記パッド形状部分,前記第1の押さえ領域及び前記第2の押さえ領域を封止する封止樹脂と
を有し、前記導電性リボンの超音波ボンディングの際に前記第1の押さえ領域及び前記第2の押さえ領域を押圧固定することを特徴とする半導体装置。 - 前記電極パッドと前記パッド形状部分との電気的接続の一部が、ワイヤーあるいはバンプを用いて行われることを特徴とする請求項1記載の半導体装置。
- 前記第1の押さえ領域として前記ダイパッドに突出部を形成することを特徴とする請求項1記載の半導体装置。
- 前記第1の押さえ領域及び前記第2の押さえ領域が表面に凹凸が形成される粗面領域であることを特徴とする請求項1記載の半導体装置。
- 前記凹凸の深さが0.2〜3μmであることを特徴とする請求項4記載の半導体装置。
- 前記粗面領域が矩形であり、1辺の長さが少なくとも0.4mm以上であることを特徴とする請求項4記載の半導体装置。
- 請求項1記載の半導体装置を製造する際の前記導電性リボンの超音波ボンディングが、
前記電極パッドと前記パッド形状部分との間に導電性リボン配置する工程と、
前記第1の押さえ領域及び前記第2の押さえ領域を押圧固定する工程と、
前記超音波ボンディングにより前記導電性リボンを前記電極パッドと前記パッド形状部分とに接続する工程と
を有することを特徴とする半導体装置の製造方法。 - 前記押圧固定により、前記第1の押さえ領域及び前記第2の押さえ領域に、表面に凹凸が形成される粗面領域を形成することを特徴とする請求項7記載の半導体装置の製造方法。
- 前記凹凸の深さが0.2〜3μmであることを特徴とする請求項8記載の半導体装置の製造方法。
- 前記粗面領域が矩形であり、1辺の長さが少なくとも0.4mm以上であることを特徴とする請求項8記載の半導体装置の製造方法。
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JP2012015203A (ja) * | 2010-06-29 | 2012-01-19 | On Semiconductor Trading Ltd | 半導体装置およびその製造方法 |
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JPH0287536A (ja) * | 1988-09-26 | 1990-03-28 | Hitachi Ltd | ボンディング装置 |
JPH04207045A (ja) * | 1990-11-30 | 1992-07-29 | Mitsumi Electric Co Ltd | リードフレームのワイヤボンディング方法 |
JP2000243780A (ja) * | 1999-02-24 | 2000-09-08 | Nec Kansai Ltd | ワイヤボンダ |
JP2004273979A (ja) * | 2003-03-12 | 2004-09-30 | Renesas Technology Corp | 超音波接合装置および方法 |
JP2008294384A (ja) * | 2007-04-27 | 2008-12-04 | Renesas Technology Corp | 半導体装置 |
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JPH0287536A (ja) * | 1988-09-26 | 1990-03-28 | Hitachi Ltd | ボンディング装置 |
JPH04207045A (ja) * | 1990-11-30 | 1992-07-29 | Mitsumi Electric Co Ltd | リードフレームのワイヤボンディング方法 |
JP2000243780A (ja) * | 1999-02-24 | 2000-09-08 | Nec Kansai Ltd | ワイヤボンダ |
JP2004273979A (ja) * | 2003-03-12 | 2004-09-30 | Renesas Technology Corp | 超音波接合装置および方法 |
JP2008294384A (ja) * | 2007-04-27 | 2008-12-04 | Renesas Technology Corp | 半導体装置 |
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