JP2007258441A - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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Abstract
【解決手段】熱処理プレートWの上面に支持シート11が設けられている。支持シート11には、シール部15より外側において第1開口部A1が形成されている。この第1開口部A1に、基板Wの水平方向の位置決めを行うガイド21が挿入されている。ガイド21と第1開口部A1との間にはシート状物11の熱膨張による伸縮を許容する隙間が形成されている。このため、支持シート11が伸縮してもガイド21がこれを妨げることがない。よって、支持シート11に皺や撓み等が生じることを防止できる。
【選択図】図1
Description
基板と当接する凸部も熱処理プレートと同様に金属であるので、基板へ与えられる熱は主に凸部を介して伝達される。よって、基板面内において凸部の接触部分と非接触部分とで熱履歴が大きく異なるという不都合がある。このような不都合については、先行特許出願(特許願2005−353432)に係る先行発明によって解消が図られている。
すなわち、請求項1に記載の発明は、基板に対して熱処理を行う熱処理装置において、熱処理プレートと、前記熱処理プレートに載置されたシート状物であって、その表面に、基板の周縁部と当接するリング状のシール部と、前記シール部の内側において基板を当接支持する凸部とが形成されたシート状物と、基板と前記シート状物との間に形成される空間の気体を排出するための排出孔と、を備えていることを特徴とするものである。
図1は、実施例1に係る熱処理装置の概略構成を示す縦断面図であり、図2(a)は、熱処理プレートの平面図であり、図2(b)は支持シート11の一部分の平面図である。
制御部51は発熱体3を加熱させて、熱処理プレート1を所定の処理温度に制御する。このとき、支持シート11が熱処理プレート1に対して相対的に伸縮する。図4に支持シート11が伸縮する様子を模試的に示す。図示するように、実線で示す支持シート11が一点鎖線で示す位置まで変形する(伸びる)様子を表している。しかしながら、このように支持シート11が伸びた場合であっても、第1開口部A1とガイド21との間には所定の隙間が形成されているので、ガイド21が支持シート11に干渉することはない。よって、支持シート11に皺や撓みが発生することがない。
制御部51による昇降機構の操作によって、昇降ピン43は図示しない搬送手段から基板Wを受け取って、支持シート11上に基板Wを載置する。基板Wは凸部13によって当接支持され、シール部15によって基板Wと支持シート11の間に形成される微小空間msの側方を閉塞する。
制御部51は圧力計39の計測結果を参照しつつ開閉弁37を操作して、微小空間msの気体を排出する。微小空間msの圧力は負圧に調整され、基板Wは熱処理プレート1側に吸着される。
基板Wを吸着すると、予め決められた時間だけこの状態を保持することで、基板Wに対して所定の熱処理を行う。
所定時間の熱処理を終えると、制御部51は開閉弁37を閉止して、微小空間msの圧力を大気圧にする。これにより、基板Wの吸着が解除される。次いで、制御部51は昇降ピン43を制御して、基板Wを上方に持ち上げて搬出する。
処理対象である基板Wの全てに熱処理を行ったあとは、制御部51は発熱体3の加熱を終了する。これにより、熱処理プレート1の温度は室温まで降下する。
図6は、実施例2に係る熱処理装置の概略構成を示す縦断面図である。なお、実施例1と同じ構成については同符号を付すことで詳細な説明を省略する。
図7は、実施例3に係る熱処理プレートの平面図である。なお、実施例1と同じ構成については同符号を付すことで詳細な説明を省略する。
図8は、実施例4に係る熱処理装置の概略構成を示す縦断面図である。なお、実施例1と同じ構成については同符号を付すことで詳細な説明を省略する。
11 …支持シート
13 …凸部
15 …シール部
21 …ガイド
22 …押さえ部材
23 …ボルト
25 …止め輪
27 …ガイド用リング
29 …浮き上がり防止部材
31 …排出孔
W …基板
ms …微小空間
A1 …第1開口部
A2 …第2開口部
Claims (10)
- 基板に対して熱処理を行う熱処理装置において、
熱処理プレートと、
前記熱処理プレートに載置されたシート状物であって、その表面に、基板の周縁部と当接するリング状のシール部と、前記シール部の内側において基板を当接支持する凸部とが形成されたシート状物と、
基板と前記シート状物との間に形成される空間の気体を排出するための排出孔と、
を備えていることを特徴とする熱処理装置。 - 請求項1に記載の熱処理装置において、
前記シート状物には、前記シール部より外側に開口部が形成され、
前記装置は、前記開口部内に配置された挿入部材を備え、
前記開口部と前記挿入部材との間に前記シート状物の伸縮を許容する隙間を設けていることを特徴とする熱処理装置。 - 請求項2に記載の熱処理装置において、
さらに、前記シール部より外側の上方に前記シート状物から隔てて設けられ、前記シート状物が前記熱処理プレートから浮き上がることを規制する浮き上がり規制部材を備えることを特徴とする熱処理装置。 - 請求項2または請求項3に記載の熱処理装置において、
さらに、基板の水平方向の位置決めを行うガイド部材を備え、
前記ガイド部材は前記開口部内に配置されて前記挿入部材を兼ねることを特徴とする熱処理装置。 - 請求項3に記載の熱処理装置において、
基板の水平方向の位置決めを行うガイド部材と、
前記ガイド部材に当接して前記ガイド部材の位置合わせを行う位置合わせ部材と、
をさらに備え、
前記ガイド部材は前記開口部内に配置されて前記挿入部材を兼ねるとともに、前記位置合わせ部材は前記浮き上がり規制部材を兼ねることを特徴とする熱処理装置。 - 請求項1に記載の熱処理装置において、
前記シート状物上であって前記シール部より外側に載置され、前記シート状物の伸縮を許容する押さえ部材と、
を備えていることを特徴とする熱処理装置。 - 請求項6に記載の熱処理装置において、
前記シール部より外側の上方に前記シート状物から隔てて設けられ、前記シート状物が前記熱処理プレートから浮き上がることを規制する浮き上がり規制部材を備えることを特徴とする熱処理装置。 - 請求項6または請求項7に記載の熱処理装置において、
さらに、基板の水平方向の位置決めを行うガイド部材を備え、
前記ガイド部材は前記シート状物上であって前記シール部より外側に載置されて、前記押さえ部材を兼ねることを特徴とする熱処理装置。 - 請求項7に記載の熱処理装置において、
基板の水平方向の位置決めを行うガイド部材と、
前記ガイド部材に当接して前記ガイド部材の位置合わせを行う位置合わせ部材と、
をさらに備え、
前記ガイド部材は前記シート状物上であって前記シール部より外側に載置されて、前記押さえ部材を兼ねるとともに、前記位置合わせ部材は前記浮き上がり規制部材を兼ねることを特徴とする熱処理装置。 - 請求項1に記載の熱処理装置において、
前記シール部より外側の上方に前記シート状物から隔てて設けられ、前記シート状物が前記熱処理プレートから浮き上がることを規制する浮き上がり規制部材を備えることを特徴とする熱処理装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080863A JP4781867B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置 |
JP2006080864A JP4827569B2 (ja) | 2006-03-23 | 2006-03-23 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
JP2006080865A JP4707593B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置と基板吸着方法 |
TW096108433A TWI360858B (en) | 2006-03-23 | 2007-03-12 | Substrate support structure, heat treatment appara |
TW100135471A TWI453861B (zh) | 2006-03-23 | 2007-03-12 | 熱處理裝置及基板吸附方法 |
US11/688,006 US7927096B2 (en) | 2006-03-23 | 2007-03-19 | Substrate support structure, heat treatment apparatus using same, first sheet-like object for use in the substrate support structure, method of manufacturing the substrate support structure, heat treatment apparatus, and substrate sucking method |
KR1020070027648A KR100831446B1 (ko) | 2006-03-23 | 2007-03-21 | 기판지지구조와, 이것을 사용한 열처리장치와,기판지지구조에 사용되는 제1시트형상물과, 기판지지구조의제조방법과, 열처리장치와, 기판흡착방법 |
CN2007100918085A CN101043018B (zh) | 2006-03-23 | 2007-03-23 | 基板支撑结构及其制造方法、热处理装置及基板吸附方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080863A JP4781867B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置 |
JP2006080864A JP4827569B2 (ja) | 2006-03-23 | 2006-03-23 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
JP2006080865A JP4707593B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置と基板吸着方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007258441A true JP2007258441A (ja) | 2007-10-04 |
JP4781867B2 JP4781867B2 (ja) | 2011-09-28 |
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JP2006080864A Active JP4827569B2 (ja) | 2006-03-23 | 2006-03-23 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
JP2006080865A Active JP4707593B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置と基板吸着方法 |
JP2006080863A Active JP4781867B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置 |
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JP2006080864A Active JP4827569B2 (ja) | 2006-03-23 | 2006-03-23 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
JP2006080865A Active JP4707593B2 (ja) | 2006-03-23 | 2006-03-23 | 熱処理装置と基板吸着方法 |
Country Status (5)
Country | Link |
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US (1) | US7927096B2 (ja) |
JP (3) | JP4827569B2 (ja) |
KR (1) | KR100831446B1 (ja) |
CN (1) | CN101043018B (ja) |
TW (2) | TWI453861B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018120978A (ja) * | 2017-01-26 | 2018-08-02 | 株式会社Screenホールディングス | 熱処理装置 |
CN110125866A (zh) * | 2019-05-30 | 2019-08-16 | 安徽元隽氢能源研究所有限公司 | 一种装配mea的工装及使用该工装的装配方法 |
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KR100831446B1 (ko) | 2008-05-22 |
JP4781867B2 (ja) | 2011-09-28 |
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JP2007258442A (ja) | 2007-10-04 |
TW201207991A (en) | 2012-02-16 |
JP4707593B2 (ja) | 2011-06-22 |
US20070222131A1 (en) | 2007-09-27 |
TW200802680A (en) | 2008-01-01 |
JP2007258443A (ja) | 2007-10-04 |
CN101043018B (zh) | 2010-05-26 |
JP4827569B2 (ja) | 2011-11-30 |
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US7927096B2 (en) | 2011-04-19 |
CN101043018A (zh) | 2007-09-26 |
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