JP5575934B2 - 接合装置及び接合システム - Google Patents
接合装置及び接合システム Download PDFInfo
- Publication number
- JP5575934B2 JP5575934B2 JP2013012328A JP2013012328A JP5575934B2 JP 5575934 B2 JP5575934 B2 JP 5575934B2 JP 2013012328 A JP2013012328 A JP 2013012328A JP 2013012328 A JP2013012328 A JP 2013012328A JP 5575934 B2 JP5575934 B2 JP 5575934B2
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- chuck
- wafer
- substrate
- joining
- holding
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- 238000005304 joining Methods 0.000 title claims description 24
- 238000012545 processing Methods 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 57
- 230000007246 mechanism Effects 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 230000004048 modification Effects 0.000 claims description 17
- 238000012986 modification Methods 0.000 claims description 17
- 238000012423 maintenance Methods 0.000 claims description 7
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 312
- 238000012546 transfer Methods 0.000 description 49
- 229910052770 Uranium Inorganic materials 0.000 description 40
- 229910052721 tungsten Inorganic materials 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- -1 oxygen ions Chemical class 0.000 description 15
- 238000003384 imaging method Methods 0.000 description 13
- 238000003825 pressing Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 10
- 229910001882 dioxygen Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/53961—Means to assemble or disassemble with work-holder for assembly
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 搬入出ステーション
3 処理ステーション
30 表面改質装置
40 表面親水化装置
41 接合装置
60 ウェハ搬送領域
230 上チャック
231 下チャック
235 下チャック保持部
236 シャフト
237 下チャック駆動部
290 本体部
290a〜290d 第1〜第4の本体部
291 中心突出部
292 吸引溝
293 外周突出部
300 制御部
WU 上ウェハ
WL 下ウェハ
WT 重合ウェハ
Claims (5)
- 基板同士を接合する接合装置であって、
下面において第1の基板を吸着保持する第1のチャックと、
前記第1のチャックの下方に設けられ、接合装置に搬送された第2の基板を上面で吸着保持する第2のチャックと、
前記第2のチャックの下方において当該第2のチャックに接触して設けられ、前記第2のチャックを真空引きするための吸引溝が上面に環状に設けられて当該第2のチャックをその外周部まで吸着保持するチャック保持部と、を有し、
前記チャック保持部の内側は厚み方向に貫通して切り欠かれ、複数の空洞部分が存在していることを特徴とする、接合装置。 - 前記吸引溝は、同心円状に異なる径で二重に設けられていることを特徴とする、請求項1に記載の接合装置。
- 前記チャック保持部の上面中心部には、周囲に比して突出し、前記第2のチャックと接触する中心突出部が設けられ、
前記チャック保持部の上面外周部には、周囲に比して突出し、前記第2のチャックと接触する複数の外周突出部が設けられていることを特徴とする、請求項1又は2に記載の接合装置。 - 前記チャック保持部は、当該チャック保持部の下方に設けられ、前記第2のチャックを移動させる移動機構に支持されていることを特徴とする、請求項1〜3のいずれかに記載の接合装置。
- 請求項1〜4のいずれかに記載の接合装置を備えた接合システムであって、
前記接合装置を備えた処理ステーションと、
第1の基板、第2の基板又は第1の基板と第2の基板が接合された重合基板をそれぞれ複数保有可能で、且つ前記処理ステーションに対して第1の基板、第2の基板又は重合基板を搬入出する搬入出ステーションと、を備え、
前記処理ステーションは、
第1の基板又は第2の基板の接合される表面を改質する表面改質装置と、
前記表面改質装置で改質された第1の基板又は第2の基板の表面を親水化する表面親水化装置と、
前記表面改質装置、前記表面親水化装置及び前記接合装置に対して、第1の基板、第2の基板又は重合基板を搬送するための搬送領域と、を有し、
前記接合装置では、前記表面親水化装置で表面が親水化された第1の基板と第2の基板を接合することを特徴とする、接合システム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013012328A JP5575934B2 (ja) | 2013-01-25 | 2013-01-25 | 接合装置及び接合システム |
TW103102144A TWI548020B (zh) | 2013-01-25 | 2014-01-21 | 接合裝置及接合系統 |
KR1020140007410A KR20140095982A (ko) | 2013-01-25 | 2014-01-21 | 접합 장치 및 접합 시스템 |
US14/162,990 US20140208556A1 (en) | 2013-01-25 | 2014-01-24 | Joining device and joining system |
KR1020190120404A KR102146633B1 (ko) | 2013-01-25 | 2019-09-30 | 접합 장치 및 접합 시스템 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013012328A JP5575934B2 (ja) | 2013-01-25 | 2013-01-25 | 接合装置及び接合システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014143367A JP2014143367A (ja) | 2014-08-07 |
JP5575934B2 true JP5575934B2 (ja) | 2014-08-20 |
Family
ID=51221347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013012328A Active JP5575934B2 (ja) | 2013-01-25 | 2013-01-25 | 接合装置及び接合システム |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140208556A1 (ja) |
JP (1) | JP5575934B2 (ja) |
KR (2) | KR20140095982A (ja) |
TW (1) | TWI548020B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6382769B2 (ja) * | 2014-08-07 | 2018-08-29 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
CN106298614A (zh) * | 2015-05-13 | 2017-01-04 | 无锡华润安盛科技有限公司 | 一种用于背面开口芯片的顶针 |
KR20240052898A (ko) * | 2017-11-17 | 2024-04-23 | 하마마츠 포토닉스 가부시키가이샤 | 흡착 방법 |
TWI782169B (zh) | 2018-01-23 | 2022-11-01 | 日商東京威力科創股份有限公司 | 接合系統及接合方法 |
US20210320024A1 (en) * | 2018-07-19 | 2021-10-14 | Bondtech Co., Ltd. | Substrate bonding device |
KR20220007687A (ko) | 2019-05-13 | 2022-01-18 | 수스 마이크로텍 리소그라피 게엠바하 | 본딩 장치 및 기판을 본딩하기 위한 방법 |
AT525844A1 (de) * | 2019-05-13 | 2023-07-15 | Suss Microtec Lithography Gmbh | Bondvorrichtung sowie Verfahren zum Bonden von Substraten |
CN113023357B (zh) * | 2021-04-14 | 2022-06-07 | 湖南三安半导体有限责任公司 | 黏贴装置 |
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US4006909A (en) * | 1975-04-16 | 1977-02-08 | Rca Corporation | Semiconductor wafer chuck with built-in standoff for contactless photolithography |
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JP3720515B2 (ja) * | 1997-03-13 | 2005-11-30 | キヤノン株式会社 | 基板処理装置及びその方法並びに基板の製造方法 |
JP3641115B2 (ja) * | 1997-10-08 | 2005-04-20 | 大日本スクリーン製造株式会社 | 基板処理装置 |
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-
2013
- 2013-01-25 JP JP2013012328A patent/JP5575934B2/ja active Active
-
2014
- 2014-01-21 KR KR1020140007410A patent/KR20140095982A/ko active Application Filing
- 2014-01-21 TW TW103102144A patent/TWI548020B/zh active
- 2014-01-24 US US14/162,990 patent/US20140208556A1/en not_active Abandoned
-
2019
- 2019-09-30 KR KR1020190120404A patent/KR102146633B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102146633B1 (ko) | 2020-08-20 |
KR20190116207A (ko) | 2019-10-14 |
TWI548020B (zh) | 2016-09-01 |
US20140208556A1 (en) | 2014-07-31 |
JP2014143367A (ja) | 2014-08-07 |
TW201438127A (zh) | 2014-10-01 |
KR20140095982A (ko) | 2014-08-04 |
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