JP2006324681A - 圧電体薄膜素子及びインクジェット式記録ヘッド - Google Patents
圧電体薄膜素子及びインクジェット式記録ヘッド Download PDFInfo
- Publication number
- JP2006324681A JP2006324681A JP2006166229A JP2006166229A JP2006324681A JP 2006324681 A JP2006324681 A JP 2006324681A JP 2006166229 A JP2006166229 A JP 2006166229A JP 2006166229 A JP2006166229 A JP 2006166229A JP 2006324681 A JP2006324681 A JP 2006324681A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- piezoelectric
- crystal
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 178
- 239000010408 film Substances 0.000 claims abstract description 321
- 239000013078 crystal Substances 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 52
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 21
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 8
- 238000005336 cracking Methods 0.000 abstract description 4
- 239000002178 crystalline material Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 119
- 238000000034 method Methods 0.000 description 46
- 238000010438 heat treatment Methods 0.000 description 41
- 239000011148 porous material Substances 0.000 description 39
- 239000000203 mixture Substances 0.000 description 31
- 238000000137 annealing Methods 0.000 description 27
- 239000010936 titanium Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 238000010304 firing Methods 0.000 description 15
- 239000002243 precursor Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000003980 solgel method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 6
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 229910003446 platinum oxide Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 2
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 2
- 235000011285 magnesium acetate Nutrition 0.000 description 2
- 239000011654 magnesium acetate Substances 0.000 description 2
- 229940069446 magnesium acetate Drugs 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910002835 Pt–Ir Inorganic materials 0.000 description 1
- 229910002845 Pt–Ni Inorganic materials 0.000 description 1
- 229910018879 Pt—Pd Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229940081735 acetylcellulose Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6264—Mixing media, e.g. organic solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14258—Multi layer thin film type piezoelectric element
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B2235/3255—Niobates or tantalates, e.g. silver niobate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/765—Tetragonal symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/787—Oriented grains
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】多結晶体からなる圧電体膜と、この圧電体膜を挟んで配置される上電極と下電極と、を備えた圧電体薄膜素子であって、前記圧電体膜の結晶体が、前記電極面に対して略垂直方向に形成されてなる。
【選択図】図5
Description
a+b+c=1、
0.10≦a≦0.55、
0.25≦b≦0.55、
0≦c≦0.5、
であることを特徴とする。
B':(50,50,0)
C':(25,25,50)
D':(10,40,50)
E':(10,45,40)
F':(35,45,20)
すなわち、前記圧電体膜を構成するPZT膜が、前記成分から構成されている。
この参考例1においては、まず、シリコン基板10上に下電極12として白金をスパッタ法で形成した。次に、圧電体薄膜14をゾルゲル法により形成した。ゾルは次のように調製した。酢酸鉛0.105モル、ジルコニウムアセチルアセトナート0.045モル、酢酸マグネシウム0.005モルと30ミリリットルの酢酸を、100℃に加熱して溶解させた。
シリコン基板上に下電極として金をスパッタ法で形成した。次に、圧電体薄膜をゾルゲル法により形成した。ゾルは次のように調製した。酢酸鉛0.105モル、ジルコニウムアセチルアセトナート0.030モル、酢酸マグネシウム0.007モルと30ミリリットルの酢酸を、100℃に加熱して溶解させた。
面方位(111)の配向度と、圧電ひずみ定数との関係は、以下の通りである。
50% 80pC/N
70% 120pC/N
90% 150pC/N
既述の参考例1,実施例1では、(100)の配向度が30%であることが好適であると説明した。ここで明らかなように、(111)の配向度を50%以上にすることにより、参考例1,実施例1と同様な電圧ひずみ定数を得て圧電特性を得ることができる。
(ここで、0.40≦X≦0.6,0≦Y≦0.1)
また、スパッタリング法によって、PZT膜を形成する場合の二成分系のPZT膜は、例えば、次の化学式で表わされる組成を有するものである。
(ここで、0.40≦X≦0.6,0≦Y≦0.3)
また、三成分系PZTの好ましい具体例としては、スパッタリング法では、前記二成分系のPZTに、例えば、第三成分(好適には、マグネシウムニオブ酸鉛である。)を添加した以下に示す化学式で表わされる組成を有するものが挙げられる。
(ここで、Aは、Mg,Co,Zn,Cd,Mn及びNiからなる群から選択される2価の金属またはY,Fe,Sc,Yb,Lu,In及びCrからなる群から選択される3価の金属を表す。また、Bは、Nb,Ta及びSbからなる群から選択される5価の金属、またはW及びTeからなる群から選択される6価の金属を表す。また、a,b,cをそれぞれモル比とした場合、a+b+c=1,0.10≦a≦0.55,0.25≦b≦0.55,0≦c≦0.5,0≦e≦0.3,0≦f≦0.15c,g=h=1/2,n=0であるが、但し、Aが3価の金属であり、かつBが6価の金属でなく、また、Aが2価の金属であり、かつBが5価の金属である場合、gは1/3であり、hは2/3であり、また、AはMg、BがNbの場合に限り、nは1を表す。)
三成分系のより好ましい具体例としては、マグネシウムニオブ酸鉛で、AがMgであり、BがNbであり、gが1/3、hが2/3であるものが挙げられる。
次に、この構造を備えた圧電体薄膜素子の製造方法について図面を参照して説明する。図6の(a)から(c)は、前述した圧電体薄膜素子の各製造工程に於ける断面図である。
先ず、特定成分のPZT焼結体をスパッタリングのターゲットとして用い、基板温度を200℃以下とし、Arガス100%雰囲気中で、RFマグネトロンスパッタリングにより、アモルファス、又はパイロクロア相からなるPZT膜の前駆体膜を基板上に形成する。
B:(50,50,0)
C:(25,25,50)
D:(10,40,50)
E:(10,45,40)
F:(35,45,20)
すなわち、10≦a≦50,20≦b≦55,0≦c≦50である。この範囲は、前記(I)式で説明した範囲の好適な範囲である。
この製造方法では、PZT膜を形成可能な金属成分の水酸化物の水和錯体、すなわちゾルを脱水処理してゲルとし、このゲルを加熱焼成して無機酸化物を調整する二つの方法について説明する。これらのゾルゲル法は、先に説明した参考例1及び実施例1とほぼ同様であるが、ここに改めて詳説することとする。
a.ゾル組成物の成膜工程
本参考例において、PZT膜を構成する金属成分のゾルは、PZT膜を形成可能な金属のアルコキシドまたはアセテートを、例えば酸で加水分解して調整することができる。本発明においては、ゾル中の金属の組成を制御することで、既述のPZT膜の組成を得ることができる。すなわち、チタン、ジルコニウム、鉛、さらには他の金属成分のそれぞれのアルコキシドまたはアセテートを出発原料とする。
次に、前述したゾル組成物の成膜工程で得た膜を焼成し、残留有機物を実質的に含まない非晶質の金属酸化物からなる多孔質ゲル薄膜を形成する。
次に、前述した工程bで得た多孔質ゲル薄膜を加熱焼成し、この膜を結晶質の金属酸化膜からなる膜に変換する。焼成は、多孔質ゲル薄膜を結晶質の金属酸化物からなる膜に変換するために必要な温度で行うが、結晶中にペロブスカイト型結晶が大部分を占めるまで行う必要はなく、ゲル薄膜が均一に結晶化された時点で終了させればよい。
次に、前述した工程a、b及びcを少なくとも1回以上繰り返し、結晶質の金属酸化物の膜を積層する。ここで、この繰り返し工程で得られる膜の膜厚、焼成温度、プレアニール条件は、下電極上に第1回の膜を形成した場合と同様である。
次に、工程dで得た膜に、焼成温度600〜1200℃、さらに好ましくは800〜1000℃の範囲でアニールを行う。焼成時間は、焼成温度や、使用する炉の形式によって変化するが、例えば、アニール炉を用いた場合、0.1〜5時間程度が好ましく、0.5〜2時間程度がより好ましい。また、RTA炉を用いた場合には、0.1〜10分程度が好ましく、0.5〜3分程度がより好ましい。
次に、もう一つのゾルゲル法を利用した圧電体薄膜素子の製造方法について説明する。
先ず、前述した工程a及びbを、少なくとも1回以上繰り返し、多孔質ゲル薄膜の積層膜を形成する。なお、工程a及びbにおいて形成される膜厚、焼成温度は、前述した製造工程(その1)に準じる。
次に、工程fで得た積層膜を焼成して、この積層膜を結晶質の金属酸化物からなる膜に変換する。この焼成は、積層膜を結晶質の金属酸化物からなる膜に変換するのに必要な温度で行うが、結晶中にペロブスカイト型結晶が大部分を占めるまで行う必要はなく、ゲル薄膜が均一に結晶化した時点で終了させればよい。また、この焼成の温度及び時間は、工程cとほぼ同じにすればよい。そしてまた、この焼成は、工程cと同様に、二段階に分けて行ってもよい。この工程により、多結晶質ゲル薄膜が複数枚積層された積層膜が、結晶質の薄膜に変換された。
次に、工程f及びc'を、少なくとも1回以上繰り返す。すなわち、この工程では、工程a及びbを少なくとも1回以上繰り返して、多孔質ゲル薄膜の積層膜を形成し、これを焼成して結晶質の金属酸化物からなる膜に変換する工程をさらに1回以上繰り返す。このようにして、結晶質の金属酸化膜からなる膜を複数枚積層した積層膜を形成する。なお、繰り返される工程a、b及びc'における種々の条件は、前述した条件と同様にした。
次に、参考例3に係る圧電体薄膜素子(発明品1)と、PZT膜を構成する結晶体の粒界が下電極の面に対して略垂直方向に存在していない以外は、発明品1と同様の構造を備えた圧電体薄膜素子(比較品1)との圧電ひずみ定数(pC/N)を測定したところ、発明品1の圧電ひずみ定数は、150pC/Nであり、比較品1の圧電ひずみ定数は、100pC/Nであった。
図10は、他の圧電体薄膜素子を構成する下電極の断面を示す走査型電子顕微鏡(SEM)写真である。なお、この参考例4では、既述の参考例3との相違点について説明し、参考例2と同様の構成及び工程に関しては、同一の符号を使用して、その詳細な説明は省略する。
次に、閉気孔(気孔)の径を制御することにより、圧電体薄膜中のクラックの発生を防止するようにした本発明の参考例について説明する。図1の点線部の断面拡大図を図12に示す。この図12に示すように、圧電体膜10中には、気孔20が存在しており、しかもその気孔は、角が丸く、結晶粒内、あるいは、結晶粒と結晶粒の間に、閉じこめられた閉気孔(個々の結晶粒は、図中に記載していない。)であり、その平均気孔径が、0.01〜0.1μmで且つ、面積密度が0.3〜5%である。
参考例5と同様にして、気孔の面積密度を変えて、アクチュエータを作成したところ、圧電体膜中のクラックの発生と上下電極間の電気リークは、表4に示すようになった。
III.次に、以上説明した圧電体薄膜素子を備えたインクジェット記録装置について説明する。このインクジェット式記録ヘッドを模式的に表す断面図を示す。図14は、本発明に係る圧電体薄膜素子を振動子として使用したインクジェット式記録ヘッドの一つのインク溜め部分を示す。
Claims (13)
- 多結晶体からなる圧電体膜と、この圧電体膜を挟んで配置される上電極と下電極と、を備えた圧電体薄膜素子であって、
前記圧電体膜の結晶体が、前記電極面に対して略垂直方向に形成されてなる圧電体薄膜素子。 - 前記圧電体の結晶体の粒界が、前記電極面に対して略垂直方向に形成されてなる請求項1に記載の圧電体薄膜素子。
- 前記圧電体膜の結晶構造が菱面体晶であり、面方位(111)の結晶面、あるいは面方位(100)の結晶面、あるいは面方位(111)と面方位(100)の結晶面のいずれかに強く配向している請求項2に記載の圧電体薄膜素子。
- 前記圧電体膜の結晶構造が正方晶であり、面方位(001)の結晶面に強く配向している請求項2に記載の圧電体薄膜素子。
- 前記結晶体の結晶粒の膜厚方向の幅が、当該結晶粒の膜面方向の幅より長い請求項2に記載の圧電体薄膜素子。
- 前記結晶体の結晶粒の膜厚方向の幅と、当該結晶粒の膜面方向の幅との関係が、膜面方向の幅/膜厚方向の幅の値が、1/10以上1/3以下である請求項5に記載の圧電体薄膜素子。
- 前記下電極が、プラチナと、前記圧電体膜の構成要素である金属元素の酸化物との化合物からなる請求項2に記載の圧電体薄膜素子。
- 前記酸化物が、酸化チタン、酸化鉛、酸化ジルコニウム、酸化マグネシウム及び酸化ニオブからなる群の中から選ばれる少なくとも1種である請求項8に記載の圧電体薄膜素子。
- 前記下電極を構成する結晶体の粒界が、前記圧電体膜の膜面に対して略垂直方向に存在してなる請求項2に記載の圧電体薄膜素子。
- 前記下電極を構成する結晶体の結晶粒の膜厚方向の幅が、当該結晶粒の膜面方向の幅より長い請求項9に記載の圧電体薄膜素子。
- 前記下電極を構成する結晶体の結晶粒の膜厚方向の幅と、当該結晶粒の膜面方向の幅との関係が、膜面方向の幅/膜厚方向の幅が1/10以上1/3以下である請求項10に記載の圧電体薄膜素子。
- 前記圧電体の結晶体の粒界が非晶質からなることを特徴とする請求項2に記載の圧電体薄膜素子。
- インク室が形成された基板と、当該インク室の一方を封止すると共に、表面にたわみ振動モードの圧電体薄膜素子が固定された振動板と、前記インク室の他方の面を封止すると共に、インク吐出用のノズル口が形成されたノズル板と、を備えてなるインクジェット式記録ヘッドであって、
前記圧電体薄膜素子が、請求項1乃至請求項12のいずれか一項に記載の圧電体薄膜素子からなるインクジェット式記録ヘッド。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006166229A JP4921863B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体素子およびインクジェット式記録ヘッド |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1995240372 | 1995-09-19 | ||
JP24037295 | 1995-09-19 | ||
JP1995322670 | 1995-12-12 | ||
JP32267095 | 1995-12-12 | ||
JP19084896 | 1996-07-19 | ||
JP1996190848 | 1996-07-19 | ||
JP24535396A JP3890634B2 (ja) | 1995-09-19 | 1996-09-17 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP2006166229A JP4921863B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体素子およびインクジェット式記録ヘッド |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24535396A Division JP3890634B2 (ja) | 1995-09-19 | 1996-09-17 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010228976A Division JP5370332B2 (ja) | 1995-09-19 | 2010-10-08 | 圧電体素子およびインクジェット式記録ヘッド |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006324681A true JP2006324681A (ja) | 2006-11-30 |
JP4921863B2 JP4921863B2 (ja) | 2012-04-25 |
Family
ID=27475505
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24535396A Expired - Lifetime JP3890634B2 (ja) | 1995-09-19 | 1996-09-17 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP2006166230A Expired - Lifetime JP4572346B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP2006166231A Expired - Lifetime JP4618196B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体アクチュエータ及びインクジェット式記録ヘッド |
JP2006166228A Expired - Lifetime JP4424333B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子の製造方法 |
JP2006166227A Expired - Lifetime JP4424332B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子の製造方法 |
JP2006166229A Expired - Lifetime JP4921863B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体素子およびインクジェット式記録ヘッド |
Family Applications Before (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24535396A Expired - Lifetime JP3890634B2 (ja) | 1995-09-19 | 1996-09-17 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP2006166230A Expired - Lifetime JP4572346B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP2006166231A Expired - Lifetime JP4618196B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体アクチュエータ及びインクジェット式記録ヘッド |
JP2006166228A Expired - Lifetime JP4424333B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子の製造方法 |
JP2006166227A Expired - Lifetime JP4424332B2 (ja) | 1995-09-19 | 2006-06-15 | 圧電体薄膜素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US6097133A (ja) |
EP (3) | EP0928034B8 (ja) |
JP (6) | JP3890634B2 (ja) |
DE (3) | DE69623349T2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010018510A (ja) * | 2007-12-27 | 2010-01-28 | Ngk Insulators Ltd | 結晶配向セラミックス |
JP2011014820A (ja) * | 2009-07-06 | 2011-01-20 | Seiko Epson Corp | 圧電体薄膜、液体噴射ヘッドおよび液体噴射装置の製造方法 |
US8020974B2 (en) | 2007-01-31 | 2011-09-20 | Panasonic Corporation | Piezoelectric thin film device and piezoelectric thin film device manufacturing method, and inkjet head and inkjet recording apparatus |
JP2011207666A (ja) * | 2010-03-30 | 2011-10-20 | Ngk Insulators Ltd | セラミックス及び圧電/電歪素子 |
JP2012071007A (ja) * | 2010-09-29 | 2012-04-12 | Fujifilm Corp | 内視鏡装置 |
JPWO2013094171A1 (ja) * | 2011-12-22 | 2015-04-27 | キヤノンアネルバ株式会社 | SrRuO3膜の成膜方法 |
Families Citing this family (121)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3438509B2 (ja) * | 1997-02-04 | 2003-08-18 | セイコーエプソン株式会社 | セラミックス薄膜及びその製造方法 |
EP0867952B8 (en) * | 1997-03-27 | 2003-05-28 | Seiko Epson Corporation | Process of producing a piezoelectric element |
US6328433B1 (en) * | 1998-01-22 | 2001-12-11 | Seiko Epson Corporation | Piezoelectric film element and ink-jet recording head using the same |
JP3520403B2 (ja) * | 1998-01-23 | 2004-04-19 | セイコーエプソン株式会社 | 圧電体薄膜素子、アクチュエータ、インクジェット式記録ヘッド、及びインクジェット式記録装置 |
JP4122564B2 (ja) * | 1998-04-24 | 2008-07-23 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法 |
DE69934175T2 (de) * | 1998-08-12 | 2007-03-08 | Seiko Epson Corp. | Piezoelektrischer Aktuator, Tintenstrahlkopf, Drucker, Herstellungsverfahren für den piezoelektrischen Aktuator, Herstellungsverfahren für den Tintenstrahlkopf |
US6594875B2 (en) * | 1998-10-14 | 2003-07-22 | Samsung Electro-Mechanics Co. | Method for producing a piezoelectric/electrostrictive actuator |
JP3517876B2 (ja) * | 1998-10-14 | 2004-04-12 | セイコーエプソン株式会社 | 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ |
JP2000243931A (ja) * | 1998-12-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
US6265139B1 (en) * | 1998-12-30 | 2001-07-24 | Samsung Electro-Mechanics Co., Ltd. | Method for fabricating piezoelectric/electrostrictive ceramic micro actuator using photolithography |
GB2345379B (en) * | 1998-12-30 | 2000-12-06 | Samsung Electro Mech | Method for fabricating piezoelectric/electrostrictive thick film using seeding layer |
JP2000357826A (ja) † | 1999-04-13 | 2000-12-26 | Seiko Epson Corp | 圧電体素子の製造方法、圧電体素子、インクジェット式記録ヘッドおよびプリンタ |
JP4327942B2 (ja) * | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
JP2000332313A (ja) | 1999-05-21 | 2000-11-30 | Matsushita Electric Ind Co Ltd | 薄膜圧電型バイモルフ素子及びその応用 |
US6688729B1 (en) | 1999-06-04 | 2004-02-10 | Canon Kabushiki Kaisha | Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same |
JP3845544B2 (ja) * | 1999-10-01 | 2006-11-15 | 日本碍子株式会社 | 圧電/電歪デバイス及びその製造方法 |
US6494567B2 (en) | 2000-03-24 | 2002-12-17 | Seiko Epson Corporation | Piezoelectric element and manufacturing method and manufacturing device thereof |
WO2002029129A1 (fr) * | 2000-10-03 | 2002-04-11 | Matsushita Electric Industrial Co., Ltd. | Film mince piezo-electrique et son procede de preparation, et element piezo-electrique comportant le film mince piezo-electrique, tete a jet d'encre utilisant l'element piezo-electrique et dispositif d'impression a jet d'encre dote de la tete a jet d'encre |
JP3491688B2 (ja) | 2000-10-16 | 2004-01-26 | セイコーエプソン株式会社 | インクジェット式記録ヘッド |
US6869170B2 (en) | 2000-10-16 | 2005-03-22 | Seiko Epson Corporation | Ink-jet recording head having a vibration plate prevented from being damaged and ink-jet recording apparatus for using the same |
KR100398363B1 (ko) * | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
JP4282245B2 (ja) * | 2001-01-31 | 2009-06-17 | 富士通株式会社 | 容量素子及びその製造方法並びに半導体装置 |
US6705708B2 (en) | 2001-02-09 | 2004-03-16 | Seiko Espon Corporation | Piezoelectric thin-film element, ink-jet head using the same, and method for manufacture thereof |
JP4925516B2 (ja) * | 2001-03-30 | 2012-04-25 | 京セラ株式会社 | 積層型圧電アクチュエータ及び噴射装置 |
JP4182329B2 (ja) * | 2001-09-28 | 2008-11-19 | セイコーエプソン株式会社 | 圧電体薄膜素子およびその製造方法、ならびにこれを用いた液体吐出ヘッド及び液体吐出装置 |
JP4387190B2 (ja) * | 2001-10-18 | 2009-12-16 | ビュン,チュル,スー | 汚染防止と膜成長速度増進機能を備える化学気相蒸着方法及び装置 |
JP2003133604A (ja) * | 2001-10-26 | 2003-05-09 | Seiko Epson Corp | 圧電体薄膜素子およびその製造方法、ならびにこれを用いたインクジェット記録ヘッド及びインクジェットプリンタ |
JP3971598B2 (ja) * | 2001-11-01 | 2007-09-05 | 富士通株式会社 | 強誘電体キャパシタおよび半導体装置 |
US6620237B2 (en) | 2001-11-15 | 2003-09-16 | Spectra, Inc. | Oriented piezoelectric film |
WO2003052840A1 (fr) | 2001-12-18 | 2003-06-26 | Matsushita Electric Industrial Co., Ltd. | Element piezoelectrique, tete d'impression a jet d'encre, capteur de vitesse angulaire, procede de fabrication, et appareil d'enregistrement a jet d'encre |
JP4530615B2 (ja) | 2002-01-22 | 2010-08-25 | セイコーエプソン株式会社 | 圧電体素子および液体吐出ヘッド |
US6960911B2 (en) * | 2002-01-29 | 2005-11-01 | Kabushiki Kaisha Toshiba | Strain sensor |
JP3956134B2 (ja) | 2002-01-29 | 2007-08-08 | セイコーエプソン株式会社 | 圧電体素子の製造方法、及び液体吐出ヘッドの製造方法 |
US6969157B2 (en) | 2002-05-31 | 2005-11-29 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
US7083270B2 (en) * | 2002-06-20 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
JP4298232B2 (ja) * | 2002-07-25 | 2009-07-15 | 株式会社村田製作所 | 圧電磁器組成物、及び圧電素子 |
JP2004059369A (ja) * | 2002-07-29 | 2004-02-26 | Brother Ind Ltd | 圧電磁器組成物及びこれを用いたインクジェットヘッド用圧電アクチュエータ |
US6944922B2 (en) * | 2002-08-13 | 2005-09-20 | Trikon Technologies Limited | Method of forming an acoustic resonator |
US7044587B2 (en) * | 2002-10-17 | 2006-05-16 | Kyocera Corporation | Actuator, its manufacturing method and printing head |
CN100363179C (zh) * | 2002-10-17 | 2008-01-23 | 京瓷株式会社 | 促动器以及打印头 |
JP3999156B2 (ja) * | 2003-03-31 | 2007-10-31 | 日本碍子株式会社 | 圧電/電歪膜型素子及び圧電/電歪磁器組成物 |
US7009328B2 (en) * | 2003-06-20 | 2006-03-07 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device made of piezoelectric/electrostrictive film and manufacturing method |
JP3965579B2 (ja) * | 2003-07-03 | 2007-08-29 | セイコーエプソン株式会社 | 圧電体層の形成方法 |
WO2005011009A1 (ja) * | 2003-07-28 | 2005-02-03 | Kyocera Corporation | 積層型電子部品とその製造方法及び積層型圧電素子 |
US7411339B2 (en) * | 2003-11-28 | 2008-08-12 | Seiko Epson Corporation | Manufacturing method of actuator device and liquid jet apparatus provided with actuator device formed by manufacturing method of the same |
DE602004027525D1 (de) * | 2003-09-25 | 2010-07-15 | Panasonic Corp | Piezoelektrisches element, tintenstrahlkopf damit und herstellungsverfahren dafür |
JP2005103771A (ja) | 2003-09-26 | 2005-04-21 | Fuji Photo Film Co Ltd | インクジェットヘッドとその製造方法及びインクジェット記録装置 |
JP4920867B2 (ja) * | 2003-11-18 | 2012-04-18 | キヤノン株式会社 | アクチュエータおよびインクジェットヘッド |
EP1726050B1 (en) * | 2004-02-27 | 2011-10-19 | Canon Kabushiki Kaisha | Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
WO2005086248A1 (ja) * | 2004-03-05 | 2005-09-15 | Matsushita Electric Industrial Co., Ltd. | 圧電体素子、インクジェットヘッド、角速度センサ、これらの製造方法及びインクジェット式記録装置 |
JP4737375B2 (ja) * | 2004-03-11 | 2011-07-27 | セイコーエプソン株式会社 | アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法並びに液体噴射装置の製造方法 |
US7312558B2 (en) | 2004-04-02 | 2007-12-25 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus |
JP3891190B2 (ja) * | 2004-05-21 | 2007-03-14 | ソニー株式会社 | 圧電素子、圧電装置および角速度センサ |
JP4782413B2 (ja) | 2004-12-24 | 2011-09-28 | 日本碍子株式会社 | 圧電/電歪体、圧電/電歪積層体、及び圧電/電歪膜型アクチュエータ |
ATE484851T1 (de) * | 2005-02-21 | 2010-10-15 | Brother Ind Ltd | Verfahren zur herstellung eines piezoelektrischen aktors |
JP4453830B2 (ja) * | 2005-03-25 | 2010-04-21 | セイコーエプソン株式会社 | 圧電素子およびその製造方法、インクジェット式記録ヘッド、並びに、インクジェットプリンタ |
JP2006278489A (ja) * | 2005-03-28 | 2006-10-12 | Seiko Epson Corp | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
JP5297576B2 (ja) † | 2005-03-28 | 2013-09-25 | セイコーエプソン株式会社 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
JP4984018B2 (ja) * | 2005-03-30 | 2012-07-25 | セイコーエプソン株式会社 | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
JP5019020B2 (ja) * | 2005-03-31 | 2012-09-05 | セイコーエプソン株式会社 | 誘電体膜の製造方法及び圧電体素子の製造方法並びに液体噴射ヘッドの製造方法 |
JP4793568B2 (ja) | 2005-07-08 | 2011-10-12 | セイコーエプソン株式会社 | アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
US7273270B2 (en) | 2005-09-16 | 2007-09-25 | Eastman Kodak Company | Ink jet printing device with improved drop selection control |
US7673976B2 (en) * | 2005-09-16 | 2010-03-09 | Eastman Kodak Company | Continuous ink jet apparatus and method using a plurality of break-off times |
US7364276B2 (en) * | 2005-09-16 | 2008-04-29 | Eastman Kodak Company | Continuous ink jet apparatus with integrated drop action devices and control circuitry |
JP2007152912A (ja) * | 2005-12-08 | 2007-06-21 | Seiko Epson Corp | 圧電素子の製造方法及び圧電素子並びに液体噴射ヘッド |
JP5105040B2 (ja) * | 2005-12-22 | 2012-12-19 | セイコーエプソン株式会社 | 圧電素子の製造方法及び液体噴射ヘッドの製造方法 |
DE102005061528B8 (de) | 2005-12-22 | 2010-06-10 | Siemens Ag | Piezokeramisches Bauteil mit Bleizirkonattitanat mit Eisen-Wolfram-Dotierung, Verfahren zum Herstellen des piezokeramischen Bauteils und seine Verwendung |
JP5354876B2 (ja) * | 2006-07-14 | 2013-11-27 | キヤノン株式会社 | 圧電体の製造方法、圧電体素子及び液体吐出ヘッド |
JP5398131B2 (ja) * | 2006-07-14 | 2014-01-29 | キヤノン株式会社 | 圧電体素子、圧電体の製造方法及び液体噴射ヘッド |
JP5311775B2 (ja) * | 2006-07-14 | 2013-10-09 | キヤノン株式会社 | 圧電体素子、インクジェットヘッド及び圧電体素子の製造方法 |
JP5251031B2 (ja) * | 2006-09-08 | 2013-07-31 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、液体噴射装置、センサー |
JP5024518B2 (ja) * | 2006-09-21 | 2012-09-12 | セイコーエプソン株式会社 | アクチュエータ装置及び液体噴射ヘッド並びに画像記録装置 |
JP5083496B2 (ja) * | 2006-09-21 | 2012-11-28 | セイコーエプソン株式会社 | アクチュエータ装置及び液体噴射ヘッド並びに画像記録装置 |
US7777395B2 (en) * | 2006-10-12 | 2010-08-17 | Eastman Kodak Company | Continuous drop emitter with reduced stimulation crosstalk |
JP2008171858A (ja) * | 2007-01-09 | 2008-07-24 | Seiko Epson Corp | 圧電素子、圧電体の製造方法及び熱処理装置 |
JP5196104B2 (ja) * | 2007-01-23 | 2013-05-15 | セイコーエプソン株式会社 | 圧電素子の製造方法、インクジェット式記録ヘッドの製造方法、およびインクジェットプリンターの製造方法 |
US8089031B2 (en) * | 2007-02-27 | 2012-01-03 | Tokyo Electron Limited | Heating apparatus for heating objects to be heated, heating method for heating the objects to be heated, and storage medium in which computer-readable program is stored |
JP4761071B2 (ja) * | 2007-03-05 | 2011-08-31 | セイコーエプソン株式会社 | 圧電素子、インクジェット式記録ヘッド、およびインクジェットプリンター |
US7758171B2 (en) * | 2007-03-19 | 2010-07-20 | Eastman Kodak Company | Aerodynamic error reduction for liquid drop emitters |
JP5277696B2 (ja) * | 2008-04-07 | 2013-08-28 | パナソニック株式会社 | 圧電デバイスの製造方法 |
US8044557B2 (en) * | 2007-04-24 | 2011-10-25 | Panasonic Corporation | Piezoelectric device and its manufacturing method |
JP4505492B2 (ja) * | 2007-11-06 | 2010-07-21 | 富士フイルム株式会社 | ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置 |
JP4737185B2 (ja) * | 2007-11-15 | 2011-07-27 | ソニー株式会社 | 圧電素子、角速度センサ、及び圧電素子の製造方法 |
JP2008153674A (ja) * | 2007-12-25 | 2008-07-03 | Seiko Epson Corp | インクジェット式記録ヘッド及び圧電体素子 |
JP2010021512A (ja) * | 2008-01-30 | 2010-01-28 | Ngk Insulators Ltd | 圧電/電歪膜型素子及びその製造方法 |
JP5475272B2 (ja) * | 2008-03-21 | 2014-04-16 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
JP4551949B2 (ja) | 2008-05-30 | 2010-09-29 | 株式会社東芝 | 電子機器 |
JP5319211B2 (ja) * | 2008-09-01 | 2013-10-16 | 本田技研工業株式会社 | 圧電セラミック材料及びアクチュエータ |
JP5475415B2 (ja) * | 2008-12-01 | 2014-04-16 | 日本碍子株式会社 | 新規な誘電体ナノポア材料及びその製法 |
JP2010167570A (ja) * | 2009-01-20 | 2010-08-05 | Seiko Epson Corp | 液体噴射ヘッドの製造方法、アクチュエーター装置の製造方法、液体噴射ヘッド及び液体噴射装置 |
US8557088B2 (en) * | 2009-02-19 | 2013-10-15 | Fujifilm Corporation | Physical vapor deposition with phase shift |
US8540851B2 (en) * | 2009-02-19 | 2013-09-24 | Fujifilm Corporation | Physical vapor deposition with impedance matching network |
ES2424244T3 (es) * | 2009-04-22 | 2013-09-30 | Kuka Roboter Gmbh | Procedimiento y dispositivo para regular un manipulador |
JP2011037149A (ja) * | 2009-08-12 | 2011-02-24 | Seiko Epson Corp | 液体噴射ヘッド及びそれを用いた液体噴射装置 |
JP2009293130A (ja) * | 2009-08-26 | 2009-12-17 | Fujifilm Corp | ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置 |
JP5132728B2 (ja) * | 2010-07-12 | 2013-01-30 | 京セラ株式会社 | アクチュエータ用圧電部材 |
CN103493510B (zh) | 2011-02-15 | 2016-09-14 | 富士胶卷迪马蒂克斯股份有限公司 | 使用微圆顶阵列的压电式换能器 |
US9689748B2 (en) | 2011-08-08 | 2017-06-27 | Panasonic Corporation | Infrared detection element |
JP5556966B2 (ja) | 2011-08-08 | 2014-07-23 | パナソニック株式会社 | 圧電体素子 |
US8727504B2 (en) | 2011-11-11 | 2014-05-20 | Stmicroelectronics, Inc. | Microfluidic jetting device with piezoelectric actuator and method for making the same |
US8956325B2 (en) | 2011-12-07 | 2015-02-17 | Stmicroelectronics, Inc. | Piezoelectric microfluidic pumping device and method for using the same |
JP5904591B2 (ja) * | 2012-03-15 | 2016-04-13 | 太陽誘電株式会社 | 弾性波デバイス |
JP2013197522A (ja) | 2012-03-22 | 2013-09-30 | Ricoh Co Ltd | 圧電体薄膜素子とその製造方法、該圧電体薄膜素子を用いた液滴吐出ヘッドおよびインクジェット記録装置 |
TW201416140A (zh) * | 2012-10-31 | 2014-05-01 | Ind Tech Res Inst | 可撓式超音波致動裝置 |
US9168740B2 (en) | 2013-04-11 | 2015-10-27 | Eastman Kodak Company | Printhead including acoustic dampening structure |
US9162454B2 (en) | 2013-04-11 | 2015-10-20 | Eastman Kodak Company | Printhead including acoustic dampening structure |
JP6567970B2 (ja) * | 2013-07-25 | 2019-08-28 | 日本碍子株式会社 | 複合基板の製法 |
US9437806B2 (en) | 2013-12-02 | 2016-09-06 | Canon Kabushiki Kaisha | Piezoelectric thin film, method of manufacturing the same, piezoelectric thin film manufacturing apparatus and liquid ejection head |
TWI650774B (zh) | 2014-03-27 | 2019-02-11 | 日商三菱綜合材料股份有限公司 | 摻雜Mn之PZT系壓電體膜形成用組成物及摻雜Mn之PZT系壓電體膜 |
WO2015146607A1 (ja) * | 2014-03-28 | 2015-10-01 | 三菱マテリアル株式会社 | Mn及びNbドープのPZT系圧電体膜形成用組成物 |
JP5894222B2 (ja) * | 2014-06-12 | 2016-03-23 | 京セラ株式会社 | 積層型電子部品およびその製法 |
US9199462B1 (en) | 2014-09-19 | 2015-12-01 | Eastman Kodak Company | Printhead with print artifact supressing cavity |
JP6460387B2 (ja) * | 2015-01-26 | 2019-01-30 | Tdk株式会社 | 圧電薄膜素子、圧電アクチュエータ、圧電センサ、並びにハードディスクドライブ、及びインクジェットプリンタ装置 |
JP6428345B2 (ja) | 2015-02-16 | 2018-11-28 | 三菱マテリアル株式会社 | Ptzt圧電体膜及びその圧電体膜形成用液組成物の製造方法 |
WO2017085924A1 (ja) * | 2015-11-16 | 2017-05-26 | 富士フイルム株式会社 | 圧電体膜、圧電素子、および液体吐出装置 |
US10865311B2 (en) | 2016-05-18 | 2020-12-15 | Canon Kabushiki Kaisha | Coating liquid for forming piezoelectric thin film, method of producing coating liquid for forming piezoelectric thin film, piezoelectric thin film, method of manufacturing piezoelectric thin film, and liquid ejection head |
US10618285B2 (en) | 2016-06-17 | 2020-04-14 | Canon Kabushiki Kaisha | Piezoelectric substrate and method of manufacturing the piezoelectric substrate, and liquid ejection head |
JP6992239B2 (ja) * | 2017-09-14 | 2022-01-13 | 株式会社アルバック | 車載用pzt薄膜積層体の製造方法 |
JP7176329B2 (ja) * | 2018-09-28 | 2022-11-22 | 株式会社リコー | 強誘電体薄膜の形成方法ならびに圧電素子および液体吐出ヘッドの製造方法 |
TW202112670A (zh) * | 2019-05-31 | 2021-04-01 | 日商三菱綜合材料股份有限公司 | 壓電體膜之製造方法、壓電體膜及壓電元件 |
CN112853286A (zh) * | 2019-11-12 | 2021-05-28 | 应用材料公司 | 压电膜的物理气相沉积 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61106454A (ja) * | 1984-10-31 | 1986-05-24 | 三菱鉱業セメント株式会社 | セラミツクス材料 |
JPH045874A (ja) * | 1990-04-21 | 1992-01-09 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜およびその製造方法 |
JPH05145123A (ja) * | 1991-11-25 | 1993-06-11 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜構成体およびその製造方法 |
JPH05296713A (ja) * | 1992-04-23 | 1993-11-09 | Canon Inc | カンチレバー型変位素子、及びこれを用いたカンチレバー型プローブ、及びこのカンチレバー型プローブを用いた走査型トンネル顕微鏡、情報処理装置 |
JPH06318745A (ja) * | 1993-03-12 | 1994-11-15 | Ngk Insulators Ltd | 圧電/電歪膜型素子 |
JPH06350154A (ja) * | 1993-06-08 | 1994-12-22 | Seiko Epson Corp | 圧電体薄膜素子 |
JPH07235708A (ja) * | 1993-12-28 | 1995-09-05 | Ngk Insulators Ltd | 圧電/電歪膜型素子の製造方法 |
JPH09223779A (ja) * | 1996-02-16 | 1997-08-26 | Texas Instr Japan Ltd | 強誘電体キャパシタ、配線、半導体装置及びこれらの製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50145899A (ja) * | 1974-05-07 | 1975-11-22 | ||
JPS5787188A (en) * | 1980-11-20 | 1982-05-31 | Matsushita Electric Ind Co Ltd | Manufacture of piezoelectric ceramics |
US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
SG83626A1 (en) * | 1989-07-11 | 2001-10-16 | Seiko Epson Corp | Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film |
JPH03232755A (ja) * | 1990-02-08 | 1991-10-16 | Matsushita Electric Ind Co Ltd | 圧電磁器の製造方法 |
JPH04149078A (ja) * | 1990-10-08 | 1992-05-22 | Japan Radio Co Ltd | 圧電振動子、超音波送受波器及び超音波送受波器用圧電材料の製造方法 |
US5265315A (en) * | 1990-11-20 | 1993-11-30 | Spectra, Inc. | Method of making a thin-film transducer ink jet head |
JP3021930B2 (ja) * | 1991-02-13 | 2000-03-15 | 三菱マテリアル株式会社 | 強誘電体薄膜の結晶配向性制御方法 |
JP3048072B2 (ja) * | 1991-05-25 | 2000-06-05 | ローム株式会社 | 酸化膜の成膜方法及びその装置 |
JPH05257103A (ja) * | 1992-03-11 | 1993-10-08 | Ricoh Co Ltd | 強誘電体薄膜及びその作製方法 |
WO1993022140A1 (en) * | 1992-04-23 | 1993-11-11 | Seiko Epson Corporation | Liquid jet head and production thereof |
JP3144948B2 (ja) * | 1992-05-27 | 2001-03-12 | 日本碍子株式会社 | インクジェットプリントヘッド |
JP3144949B2 (ja) * | 1992-05-27 | 2001-03-12 | 日本碍子株式会社 | 圧電/電歪アクチュエータ |
JP3212159B2 (ja) * | 1992-09-28 | 2001-09-25 | ローム株式会社 | 結晶性薄膜製造方法 |
JP3244311B2 (ja) * | 1992-09-28 | 2002-01-07 | ローム株式会社 | 半導体装置の製造方法 |
JPH06168624A (ja) * | 1992-11-27 | 1994-06-14 | Murata Mfg Co Ltd | 強誘電体薄膜素子 |
US5504388A (en) * | 1993-03-12 | 1996-04-02 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having electrode film(s) with specified surface roughness |
JP3232755B2 (ja) | 1993-03-24 | 2001-11-26 | ダイキン工業株式会社 | 空気調和装置 |
JPH0794600A (ja) * | 1993-06-29 | 1995-04-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3521499B2 (ja) * | 1993-11-26 | 2004-04-19 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
JP3461398B2 (ja) * | 1994-01-13 | 2003-10-27 | ローム株式会社 | 誘電体キャパシタおよびその製造方法 |
JP3162584B2 (ja) * | 1994-02-14 | 2001-05-08 | 日本碍子株式会社 | 圧電/電歪膜型素子及びその製造方法 |
JP3209082B2 (ja) * | 1996-03-06 | 2001-09-17 | セイコーエプソン株式会社 | 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド |
-
1996
- 1996-09-17 JP JP24535396A patent/JP3890634B2/ja not_active Expired - Lifetime
- 1996-09-18 DE DE1996623349 patent/DE69623349T2/de not_active Expired - Lifetime
- 1996-09-18 EP EP19990101631 patent/EP0928034B8/en not_active Expired - Lifetime
- 1996-09-18 DE DE1996625713 patent/DE69625713T2/de not_active Expired - Lifetime
- 1996-09-18 EP EP19960114974 patent/EP0764992B8/en not_active Expired - Lifetime
- 1996-09-18 EP EP19990101630 patent/EP0928033B8/en not_active Expired - Lifetime
- 1996-09-18 DE DE1996609915 patent/DE69609915T2/de not_active Expired - Lifetime
- 1996-09-19 US US08/716,610 patent/US6097133A/en not_active Expired - Lifetime
-
1998
- 1998-09-15 US US09/153,037 patent/US6387225B1/en not_active Expired - Lifetime
-
1999
- 1999-11-01 US US09/431,088 patent/US6294860B1/en not_active Expired - Lifetime
-
2006
- 2006-06-15 JP JP2006166230A patent/JP4572346B2/ja not_active Expired - Lifetime
- 2006-06-15 JP JP2006166231A patent/JP4618196B2/ja not_active Expired - Lifetime
- 2006-06-15 JP JP2006166228A patent/JP4424333B2/ja not_active Expired - Lifetime
- 2006-06-15 JP JP2006166227A patent/JP4424332B2/ja not_active Expired - Lifetime
- 2006-06-15 JP JP2006166229A patent/JP4921863B2/ja not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61106454A (ja) * | 1984-10-31 | 1986-05-24 | 三菱鉱業セメント株式会社 | セラミツクス材料 |
JPH045874A (ja) * | 1990-04-21 | 1992-01-09 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜およびその製造方法 |
JPH05145123A (ja) * | 1991-11-25 | 1993-06-11 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜構成体およびその製造方法 |
JPH05296713A (ja) * | 1992-04-23 | 1993-11-09 | Canon Inc | カンチレバー型変位素子、及びこれを用いたカンチレバー型プローブ、及びこのカンチレバー型プローブを用いた走査型トンネル顕微鏡、情報処理装置 |
JPH06318745A (ja) * | 1993-03-12 | 1994-11-15 | Ngk Insulators Ltd | 圧電/電歪膜型素子 |
JPH06350154A (ja) * | 1993-06-08 | 1994-12-22 | Seiko Epson Corp | 圧電体薄膜素子 |
JPH07235708A (ja) * | 1993-12-28 | 1995-09-05 | Ngk Insulators Ltd | 圧電/電歪膜型素子の製造方法 |
JPH09223779A (ja) * | 1996-02-16 | 1997-08-26 | Texas Instr Japan Ltd | 強誘電体キャパシタ、配線、半導体装置及びこれらの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8020974B2 (en) | 2007-01-31 | 2011-09-20 | Panasonic Corporation | Piezoelectric thin film device and piezoelectric thin film device manufacturing method, and inkjet head and inkjet recording apparatus |
JP2010018510A (ja) * | 2007-12-27 | 2010-01-28 | Ngk Insulators Ltd | 結晶配向セラミックス |
JP2011014820A (ja) * | 2009-07-06 | 2011-01-20 | Seiko Epson Corp | 圧電体薄膜、液体噴射ヘッドおよび液体噴射装置の製造方法 |
JP2011207666A (ja) * | 2010-03-30 | 2011-10-20 | Ngk Insulators Ltd | セラミックス及び圧電/電歪素子 |
JP2012071007A (ja) * | 2010-09-29 | 2012-04-12 | Fujifilm Corp | 内視鏡装置 |
JPWO2013094171A1 (ja) * | 2011-12-22 | 2015-04-27 | キヤノンアネルバ株式会社 | SrRuO3膜の成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0928034A2 (en) | 1999-07-07 |
JP4572346B2 (ja) | 2010-11-04 |
JP4424332B2 (ja) | 2010-03-03 |
JP2006310877A (ja) | 2006-11-09 |
EP0928034A3 (en) | 1999-08-04 |
JP2006287254A (ja) | 2006-10-19 |
DE69623349D1 (de) | 2002-10-02 |
EP0928034B8 (en) | 2003-05-28 |
JP4921863B2 (ja) | 2012-04-25 |
EP0928033A3 (en) | 1999-08-04 |
DE69609915T2 (de) | 2000-12-21 |
EP0764992A1 (en) | 1997-03-26 |
JP4424333B2 (ja) | 2010-03-03 |
DE69609915D1 (de) | 2000-09-28 |
EP0928033A2 (en) | 1999-07-07 |
JPH1081016A (ja) | 1998-03-31 |
EP0928034B1 (en) | 2003-01-08 |
EP0928033B1 (en) | 2002-08-28 |
US6387225B1 (en) | 2002-05-14 |
JP2006339663A (ja) | 2006-12-14 |
EP0764992B1 (en) | 2000-08-23 |
DE69625713T2 (de) | 2003-08-07 |
US6097133A (en) | 2000-08-01 |
JP4618196B2 (ja) | 2011-01-26 |
US6294860B1 (en) | 2001-09-25 |
EP0764992B8 (en) | 2003-07-02 |
DE69623349T2 (de) | 2002-12-19 |
JP3890634B2 (ja) | 2007-03-07 |
DE69625713D1 (de) | 2003-02-13 |
EP0928033B8 (en) | 2003-05-28 |
JP2006287255A (ja) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4921863B2 (ja) | 圧電体素子およびインクジェット式記録ヘッド | |
US7240409B2 (en) | Process of making a piezoelectric thin film component | |
US5825121A (en) | Thin film piezoelectric device and ink jet recording head comprising the same | |
US6543107B1 (en) | Method of producing a piezoelectric thin film | |
CN103733366B (zh) | 压电体元件 | |
JP5370346B2 (ja) | 圧電体素子およびインクジェット式記録ヘッド | |
JP6967008B2 (ja) | 圧電薄膜素子 | |
JPH09223831A (ja) | 圧電体薄膜およびその製造法ならびにそれを用いたインクジェット記録ヘッド | |
JP3903474B2 (ja) | アクチュエータ、及びインクジェット式記録ヘッド、並びに圧電体薄膜素子の製造方法 | |
JP5010132B2 (ja) | 圧電体膜及びその製造方法 | |
JP5354876B2 (ja) | 圧電体の製造方法、圧電体素子及び液体吐出ヘッド | |
JP2012147021A (ja) | 圧電体膜及び圧電体膜を備えた液体吐出ヘッド | |
JP4144653B2 (ja) | インクジェット式記録ヘッド | |
JP2015216195A (ja) | 超音波プローブ | |
JPH0878748A (ja) | 薄膜圧電体素子およびそれを用いたインクジェット記録ヘッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20070409 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100607 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100713 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101008 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20101018 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110415 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20110520 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111227 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120203 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150210 Year of fee payment: 3 |
|
EXPY | Cancellation because of completion of term |