JP5297576B2 - 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 - Google Patents
圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 Download PDFInfo
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- JP5297576B2 JP5297576B2 JP2005093051A JP2005093051A JP5297576B2 JP 5297576 B2 JP5297576 B2 JP 5297576B2 JP 2005093051 A JP2005093051 A JP 2005093051A JP 2005093051 A JP2005093051 A JP 2005093051A JP 5297576 B2 JP5297576 B2 JP 5297576B2
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- 239000007788 liquid Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 52
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 22
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 description 31
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- 239000002243 precursor Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052741 iridium Inorganic materials 0.000 description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 238000004736 wide-angle X-ray diffraction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
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- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14419—Manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Description
かかる態様では、結晶が垂直に形成されて優れた変位特性の圧電体層が実現できる。
これによれば、所望の厚さの圧電体層を高精度に得ることができる。
これによれば、チタン酸ジルコン酸鉛からなる所望の結晶の圧電体層を得ることができる。
かかる態様では、優れた変位特性の圧電素子を有するアクチュエータ装置を実現できる。
かかる態様では、優れた変位特性を有する圧電素子によって、優れた液体噴射特性を有する液体噴射ヘッドを実現できる。
かかる態様では、優れた液体噴射特性を有する液体噴射装置を実現できる。
(実施形態1)
図1は、本発明の実施形態1に係るインクジェット式記録ヘッドの分解斜視図であり、図2は、図1の平面図及びそのA−A′断面図である。
チタン酸ジルコン酸鉛(PZT)からなる圧電体膜をRTA装置によって昇温レート120℃/secで焼成し、これを4層積層することで実施例の圧電体層を形成した。
チタン酸ジルコン酸鉛(PZT)からなる圧電体膜をRTA装置によって昇温レート10℃/secで焼成し、これらを4層積層することで比較例1の圧電体層を形成した。
チタン酸ジルコン酸鉛(PZT)からなる圧電体膜をRTA装置によって昇温レート1℃/secで焼成し、これらを4層積層することで比較例2の圧電体層を形成した。
チタン酸ジルコン酸鉛(PZT)からなる圧電体膜を拡散炉によって昇温レート3℃/secで焼成し、これらを4層積層することで比較例3の圧電体層を形成した。
上述した実施形態1と同様に、実施例及び比較例1〜3の圧電体層について、広角X線回折法により表面の配高度を測定すると共に、インプレーンX線回折法により垂直面の配高度を測定した。また、各圧電体層の変位定数を測定した。これらの結果を下記表1に示す。
以上、本発明の実施形態1を説明したが、インクジェット式記録ヘッドの基本的構成は上述したものに限定されるものではない。例えば、上述した実施形態1では、圧電体前駆体膜71を塗布、乾燥及び脱脂した後、焼成して圧電体膜72を形成するようにしたが、特にこれに限定されず、例えば、圧電体前駆体膜71を塗布、乾燥及び脱脂する工程を複数回、例えば、2回繰り返し行った後、焼成することで圧電体膜72を形成するようにしてもよい。
Claims (5)
- 下電極と、チタン酸ジルコン酸鉛である圧電体層と、上電極と、を備え、前記圧電体層の表面の(100)面、(110)面及び(111)面に対する(100)面の割合が86%以上であると共に、前記圧電体層の表面に直交する垂直面の(100)面、(110)面、(210)面、(111)面及び(211)面に対する(100)面、(110)面及び(210)面の割合が87%以上であることを特徴とする圧電素子。
- 前記圧電体層が、圧電体膜が複数積層されて形成されていることを特徴とする請求項1に記載の圧電素子。
- 請求項1又は2に記載の圧電素子が、基板上に振動板を介して設けられていることを特徴とするアクチュエータ装置。
- 請求項3に記載のアクチュエータ装置をノズル開口から液体を噴射させる液体噴射手段として具備することを特徴とする液体噴射ヘッド。
- 請求項4に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005093051A JP5297576B2 (ja) | 2005-03-28 | 2005-03-28 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
EP06006124.9A EP1707367B2 (en) | 2005-03-28 | 2006-03-24 | Piezoelectric element, actuator device, liquid-jet head and liquid-jet apparatus |
CN2006100674245A CN1841803B (zh) | 2005-03-28 | 2006-03-27 | 压电元件、致动器装置、液体喷射头和液体喷射设备 |
US11/390,222 US7651199B2 (en) | 2005-03-28 | 2006-03-28 | Piezoelectric element, actuator device, liquid-jet head and liquid-jet apparatus |
KR20060027935A KR100830626B1 (ko) | 2005-03-28 | 2006-03-28 | 압전부재, 액츄에이터 장치, 액체분사 헤드 및 액체분사장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005093051A JP5297576B2 (ja) | 2005-03-28 | 2005-03-28 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
Publications (3)
Publication Number | Publication Date |
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JP2006278562A JP2006278562A (ja) | 2006-10-12 |
JP2006278562A5 JP2006278562A5 (ja) | 2007-10-25 |
JP5297576B2 true JP5297576B2 (ja) | 2013-09-25 |
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JP2005093051A Active JP5297576B2 (ja) | 2005-03-28 | 2005-03-28 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7651199B2 (ja) |
EP (1) | EP1707367B2 (ja) |
JP (1) | JP5297576B2 (ja) |
KR (1) | KR100830626B1 (ja) |
CN (1) | CN1841803B (ja) |
Families Citing this family (7)
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JP5297576B2 (ja) * | 2005-03-28 | 2013-09-25 | セイコーエプソン株式会社 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
EP2174359A2 (en) | 2007-07-03 | 2010-04-14 | Koninklijke Philips Electronics N.V. | Thin film detector for presence detection |
JP5540654B2 (ja) * | 2009-11-03 | 2014-07-02 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
US9761785B2 (en) | 2011-10-17 | 2017-09-12 | The United States Of America As Represented By The Secretary Of The Army | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing |
US8866367B2 (en) | 2011-10-17 | 2014-10-21 | The United States Of America As Represented By The Secretary Of The Army | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making |
JP6273829B2 (ja) | 2013-09-13 | 2018-02-07 | 株式会社リコー | 電気機械変換素子とその製造方法、及び電気機械変換素子を有する液滴吐出ヘッド、液滴吐出ヘッドを有する液滴吐出装置 |
CN111703207B (zh) * | 2020-05-13 | 2021-09-14 | 苏州锐发打印技术有限公司 | 带单层内电极的压电喷墨打印器件 |
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JP3890634B2 (ja) | 1995-09-19 | 2007-03-07 | セイコーエプソン株式会社 | 圧電体薄膜素子及びインクジェット式記録ヘッド |
JP4182329B2 (ja) | 2001-09-28 | 2008-11-19 | セイコーエプソン株式会社 | 圧電体薄膜素子およびその製造方法、ならびにこれを用いた液体吐出ヘッド及び液体吐出装置 |
JP2003133604A (ja) * | 2001-10-26 | 2003-05-09 | Seiko Epson Corp | 圧電体薄膜素子およびその製造方法、ならびにこれを用いたインクジェット記録ヘッド及びインクジェットプリンタ |
CN100345320C (zh) * | 2001-12-18 | 2007-10-24 | 松下电器产业株式会社 | 压电元件、喷墨头、角速度传感器及其制法、喷墨式记录装置 |
JP4530615B2 (ja) | 2002-01-22 | 2010-08-25 | セイコーエプソン株式会社 | 圧電体素子および液体吐出ヘッド |
JP3956134B2 (ja) † | 2002-01-29 | 2007-08-08 | セイコーエプソン株式会社 | 圧電体素子の製造方法、及び液体吐出ヘッドの製造方法 |
KR100572916B1 (ko) * | 2002-02-19 | 2006-04-24 | 마쯔시다덴기산교 가부시키가이샤 | 압전체 및 그 제조방법, 그리고 이 압전체를 구비한 압전소자, 잉크젯헤드 및 잉크젯방식 기록장치 |
JP3555682B2 (ja) | 2002-07-09 | 2004-08-18 | セイコーエプソン株式会社 | 液体吐出ヘッド |
US7144101B2 (en) * | 2003-01-31 | 2006-12-05 | Canon Kabushiki Kaisha | Piezoelectric element |
US7215067B2 (en) | 2003-02-07 | 2007-05-08 | Canon Kabushiki Kaisha | Ferroelectric thin film element, piezoelectric actuator and liquid discharge head |
KR100628812B1 (ko) * | 2003-05-21 | 2006-09-26 | 제이에프이 미네랄 가부시키가이샤 | 압전단결정 소자와 그 제조방법 |
JP2006278489A (ja) * | 2005-03-28 | 2006-10-12 | Seiko Epson Corp | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
JP5297576B2 (ja) * | 2005-03-28 | 2013-09-25 | セイコーエプソン株式会社 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
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2005
- 2005-03-28 JP JP2005093051A patent/JP5297576B2/ja active Active
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- 2006-03-27 CN CN2006100674245A patent/CN1841803B/zh active Active
- 2006-03-28 KR KR20060027935A patent/KR100830626B1/ko active IP Right Grant
- 2006-03-28 US US11/390,222 patent/US7651199B2/en active Active
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KR100830626B1 (ko) | 2008-05-20 |
JP2006278562A (ja) | 2006-10-12 |
EP1707367A2 (en) | 2006-10-04 |
US20060268073A1 (en) | 2006-11-30 |
EP1707367B2 (en) | 2017-05-10 |
CN1841803A (zh) | 2006-10-04 |
EP1707367A3 (en) | 2009-04-08 |
KR20060104932A (ko) | 2006-10-09 |
US7651199B2 (en) | 2010-01-26 |
CN1841803B (zh) | 2010-04-07 |
EP1707367B1 (en) | 2014-01-15 |
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