DE69808164T2 - Verfahren zur Herstellung eines piezoelektrischen Elements - Google Patents

Verfahren zur Herstellung eines piezoelektrischen Elements

Info

Publication number
DE69808164T2
DE69808164T2 DE1998608164 DE69808164T DE69808164T2 DE 69808164 T2 DE69808164 T2 DE 69808164T2 DE 1998608164 DE1998608164 DE 1998608164 DE 69808164 T DE69808164 T DE 69808164T DE 69808164 T2 DE69808164 T2 DE 69808164T2
Authority
DE
Germany
Prior art keywords
manufacturing
piezoelectric element
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1998608164
Other languages
English (en)
Other versions
DE69808164D1 (de
Inventor
Hong Qui
Soichi Moriya
Hiroyuki Kamel
Koji Sumi
Masami Murai
Tsutomu Nishiwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69808164D1 publication Critical patent/DE69808164D1/de
Publication of DE69808164T2 publication Critical patent/DE69808164T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Formation Of Insulating Films (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1998608164 1997-03-27 1998-03-25 Verfahren zur Herstellung eines piezoelektrischen Elements Expired - Lifetime DE69808164T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7624697 1997-03-27
JP22515697 1997-08-21

Publications (2)

Publication Number Publication Date
DE69808164D1 DE69808164D1 (de) 2002-10-31
DE69808164T2 true DE69808164T2 (de) 2003-01-30

Family

ID=26417405

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998608164 Expired - Lifetime DE69808164T2 (de) 1997-03-27 1998-03-25 Verfahren zur Herstellung eines piezoelektrischen Elements

Country Status (4)

Country Link
US (1) US6551652B2 (de)
EP (2) EP1179861A3 (de)
JP (2) JP3890733B2 (de)
DE (1) DE69808164T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3948089B2 (ja) * 1998-01-22 2007-07-25 セイコーエプソン株式会社 圧電体素子及びそれを用いたインクジェット式記録ヘッド
DE69936075T2 (de) * 1998-01-22 2007-09-13 Seiko Epson Corp. Piezoelektrisches Schichtelement und Tintenstrahldruckkopf, der dieses benutzt
TW404021B (en) * 1998-04-09 2000-09-01 Hitachi Ltd Semiconductor memory device and manufacturing method thereof
JP3517876B2 (ja) 1998-10-14 2004-04-12 セイコーエプソン株式会社 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ
JP5115910B2 (ja) * 2002-01-22 2013-01-09 セイコーエプソン株式会社 プリンタ
JP4530615B2 (ja) * 2002-01-22 2010-08-25 セイコーエプソン株式会社 圧電体素子および液体吐出ヘッド
US7193756B2 (en) * 2003-11-26 2007-03-20 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, method for fabricating the same, inkjet head, method for fabricating the same, and inkjet recording apparatus
JP4877451B2 (ja) * 2004-01-23 2012-02-15 セイコーエプソン株式会社 圧電素子の製造方法及び液体噴射ヘッド
US20080024563A1 (en) * 2006-07-25 2008-01-31 Matsushita Electric Industrial Co., Ltd. Piezoelectric thin film element, ink jet head, and ink jet type recording apparatus
US7799158B2 (en) * 2007-05-28 2010-09-21 Ngk Insulators, Ltd. Method for producing crystallographically-oriented ceramic
JP2011061118A (ja) * 2009-09-14 2011-03-24 Seiko Epson Corp 圧電素子、液体噴射ヘッドおよび液体噴射装置
JP5776142B2 (ja) * 2010-06-25 2015-09-09 コニカミノルタ株式会社 振動板
JP4998652B2 (ja) * 2010-11-10 2012-08-15 コニカミノルタホールディングス株式会社 強誘電体薄膜、強誘電体薄膜の製造方法、圧電体素子の製造方法
JP5892406B2 (ja) 2011-06-30 2016-03-23 株式会社リコー 電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置
JP5954763B2 (ja) * 2011-12-02 2016-07-20 ローム株式会社 圧電体膜、それを用いたセンサおよびアクチュエータ、ならびに圧電体膜の製造方法
JP5539430B2 (ja) * 2012-03-22 2014-07-02 富士フイルム株式会社 電子機器の製造方法
WO2015114684A1 (ja) * 2014-01-31 2015-08-06 パナソニックＩｐマネジメント株式会社 プロトン伝導体
EP3220430B1 (de) * 2016-03-16 2019-10-30 Xaar Technology Limited Piezoelektrisches dünnschichtelement

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518703B2 (ja) 1989-11-02 1996-07-31 堺化学工業株式会社 積層型複合圧電体およびその製造方法
US5500988A (en) 1990-11-20 1996-03-26 Spectra, Inc. Method of making a perovskite thin-film ink jet transducer
GB9025706D0 (en) 1990-11-27 1991-01-09 Xaar Ltd Laminate for use in manufacture of ink drop printheads
JPH0585704A (ja) * 1991-03-07 1993-04-06 Olympus Optical Co Ltd 強誘電体薄膜の製造方法
JP3182909B2 (ja) * 1991-09-25 2001-07-03 セイコーエプソン株式会社 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法
JP3105081B2 (ja) * 1992-06-22 2000-10-30 ローム株式会社 強誘電体薄膜の製造方法
JPH0620866A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 誘電体素子
US5502345A (en) 1994-08-29 1996-03-26 The United States Of America As Represented By The Secretary Of The Navy Unitary transducer with variable resistivity
JPH0867599A (ja) * 1994-08-30 1996-03-12 Sanyo Electric Co Ltd 強誘電体薄膜の製造方法
EP0727832B1 (de) * 1995-02-20 2001-11-28 Seiko Epson Corporation Verfahren zur Herstellung einer piezoelektrischen Dünnschicht
JP3890634B2 (ja) * 1995-09-19 2007-03-07 セイコーエプソン株式会社 圧電体薄膜素子及びインクジェット式記録ヘッド

Also Published As

Publication number Publication date
JP2006245619A (ja) 2006-09-14
EP0867952B1 (de) 2002-09-25
US6551652B2 (en) 2003-04-22
DE69808164D1 (de) 2002-10-31
US20020094372A1 (en) 2002-07-18
JP3890733B2 (ja) 2007-03-07
EP0867952B8 (de) 2003-05-28
EP1179861A2 (de) 2002-02-13
EP1179861A3 (de) 2003-03-19
JPH11126930A (ja) 1999-05-11
EP0867952A1 (de) 1998-09-30

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