JP2006310782A - 炭化シリコントレンチ装置の端部構造 - Google Patents
炭化シリコントレンチ装置の端部構造 Download PDFInfo
- Publication number
- JP2006310782A JP2006310782A JP2006057044A JP2006057044A JP2006310782A JP 2006310782 A JP2006310782 A JP 2006310782A JP 2006057044 A JP2006057044 A JP 2006057044A JP 2006057044 A JP2006057044 A JP 2006057044A JP 2006310782 A JP2006310782 A JP 2006310782A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- trench
- active region
- region
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000638 solvent extraction Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 4
- 239000007943 implant Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Abstract
【解決手段】炭化シリコン半導体装置に、1つまたは複数のトレンチからなる端部領域を設け、かつこの端部領域に、端部領域と半導体装置の活性領域とを連絡するメサ部を形成する。
【選択図】図1B
Description
本発明は、半導体装置の端部構造に係り、より詳しくは、炭化シリコン製半導体装置におけるトレンチ形端部構造に関する。
102 本体
103 基板
104 緩衝部
105 ドリフト層
106 接触用金属層
107 ソース電極
108 ゲート電極
109 ゲート接触部
109d ゲートパッド
109a〜109c ゲートフィンガー
110 活性領域
112 ゲート
114 インプラント部
116 中央メサ部
118 チャネル
130 ゲートランナー
132 中間トレンチ
134 インプラント部
136 導電部
138 内側メサ部
140 絶縁層
142 開口
144 ゲート電極
146 高濃度ドープ部
150 端部領域
152 端部トレンチ
154 ガードリング
156 導電部
158 ドープ部
160 フィールドプレート
162 フィールド絶縁膜
164 リンクメサ部
166 端部メサ部
200 半導体装置
230 ゲートランナー
232 中間トレンチ
234 インプラント部
238 内側メサ部
240 絶縁層
242 開口
244 ゲート電極
246 ドープ部
250 端部領域
252a〜252i 端部トレンチ
256 導電部
258 ドープ部
262 フィールド絶縁膜
263 リンクメサ部
264 中間メサ部
266 端部メサ部
Claims (26)
- 炭化シリコン基板と、この炭化シリコン基板の一つの面に形成された活性領域と、前記炭化シリコン基板の一つの面に形成され、かつ前記活性領域を区画する端部領域であって、側壁および底面を有する端部トレンチが形成された端部領域と、前記端部トレンチの側壁および底面の上に形成されたガードリングと、前記端部トレンチを被覆するフィールド絶縁膜とを有する半導体装置。
- 前記フィールド絶縁膜の上にフィールドプレートが形成されていることを特徴とする請求項1記載の半導体装置。
- 前記フィールドプレートは、前記端部トレンチの外側の側壁を越えて延びていることを特徴とする請求項2記載の半導体装置。
- 前記フィールドプレートは、外部から絶縁された浮動フィールドプレートであることを特徴とする請求項2記載の半導体装置。
- 前記フィールドプレートは、前記フィールド絶縁膜に設けられた開口を通じて、前記ガードリングと接触していることを特徴とする請求項4記載の半導体装置。
- 前記フィールドプレートは、この半導体装置に設けられた電極と短絡していることを特徴とする請求項2記載の半導体装置。
- 前記端部領域には、前記端部トレンチと前記活性領域との間にあって、端部領域と活性領域とを連絡するメサ部が形成されていることを特徴とする請求項1記載の半導体装置。
- 前記フィールド絶縁膜は、前記メサ部の頂面にまで延びていることを特徴とする請求項7記載の半導体装置。
- 前記端部領域には、この半導体装置の周縁部に沿って、等電位リングが設けられていることを特徴とする請求項1記載の半導体装置。
- 前記活性領域には、少なくとも1つのトレンチが設けられていることを特徴とする請求項1記載の半導体装置。
- 前記端部トレンチと、前記活性領域における少なくとも1つのトレンチは、ともに、概ね、基板の同じ深さにまで延びていることを特徴とする請求項10記載の半導体装置。
- 前記フィールド絶縁膜の下に位置する端部トレンチに、導電部が形成されていることを特徴とする請求項10記載の半導体装置。
- 前記導電部は、ドーピングされたポリシリコンから形成されていることを特徴とする請求項12記載の半導体装置。
- 接合型電界効果トランジスタであることを特徴とする請求項1記載の半導体装置。
- 前記端部トレンチと前記活性領域との間に、ゲートランナーが形成されていることを特徴とする請求項1記載の半導体装置。
- 前記端部領域には、側壁と底面を有する複数の端部トレンチが形成され、隣合う端部トレンチ同士は、メサ部によって互いに隔てられていることを特徴とする請求項1記載の半導体装置。
- 前記各端部トレンチの側壁と底面の上には、ガードリングが形成されていることを特徴とする請求項16記載の半導体装置。
- 前記フィールド絶縁膜は、前記複数の端部トレンチを被覆していることを特徴とする請求項17記載の半導体装置。
- 前記フィールド絶縁膜の上には、フィールドプレートが形成されていることを特徴とする請求項18記載の半導体装置。
- 前記フィールド絶縁膜の下に位置する各端部トレンチに、導電部が形成されていることを特徴とする請求項18記載の半導体装置。
- 前記導電部は、ドーピングされたポリシリコンから形成されていることを特徴とする請求項20記載の半導体装置。
- 前記端部領域には、前記端部領域と前記活性領域とを連絡するリンクメサ部が形成されていることを特徴とする請求項18記載の半導体装置。
- 前記端部領域には、この半導体装置の周縁部に沿って、等電位リングが設けられていることを特徴とする請求項18記載の半導体装置。
- 前記活性領域には、少なくとも1つのトレンチが設けられていることを特徴とする請求項16記載の半導体装置。
- 前記各端部トレンチと、前記活性領域における少なくとも1つのトレンチは、ともに、概ね、基板の同じ深さにまで延びていることを特徴とする請求項24記載の半導体装置。
- 接合型電界効果トランジスタであることを特徴とする請求項16記載の半導体装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65878905P | 2005-03-04 | 2005-03-04 | |
US60/658,789 | 2005-03-04 | ||
US11/365,291 US9419092B2 (en) | 2005-03-04 | 2006-03-01 | Termination for SiC trench devices |
US11/365,291 | 2006-03-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006310782A true JP2006310782A (ja) | 2006-11-09 |
JP2006310782A5 JP2006310782A5 (ja) | 2007-08-30 |
JP5199544B2 JP5199544B2 (ja) | 2013-05-15 |
Family
ID=36570285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006057044A Active JP5199544B2 (ja) | 2005-03-04 | 2006-03-03 | 炭化シリコントレンチ装置の終端構造 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9419092B2 (ja) |
EP (1) | EP1699083B1 (ja) |
JP (1) | JP5199544B2 (ja) |
AT (1) | ATE523899T1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013098268A (ja) * | 2011-10-31 | 2013-05-20 | Hitachi Ltd | トレンチ型ショットキー接合型半導体装置及びその製造方法 |
WO2013120010A1 (en) * | 2012-02-09 | 2013-08-15 | Vishay-Siliconix | Mosfet termination trench |
JP2015065469A (ja) * | 2010-03-08 | 2015-04-09 | クリー インコーポレイテッドCree Inc. | ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
WO2019116684A1 (ja) * | 2017-12-15 | 2019-06-20 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
TWI278090B (en) | 2004-10-21 | 2007-04-01 | Int Rectifier Corp | Solderable top metal for SiC device |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
KR101193453B1 (ko) | 2006-07-31 | 2012-10-24 | 비쉐이-실리코닉스 | 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 |
DE102006046853B4 (de) * | 2006-10-02 | 2010-01-07 | Infineon Technologies Austria Ag | Randkonstruktion für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
US20160372542A9 (en) * | 2011-07-19 | 2016-12-22 | Yeeheng Lee | Termination of high voltage (hv) devices with new configurations and methods |
US8803251B2 (en) * | 2011-07-19 | 2014-08-12 | Alpha And Omega Semiconductor Incorporated | Termination of high voltage (HV) devices with new configurations and methods |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US20130168765A1 (en) * | 2012-01-04 | 2013-07-04 | Vishay General Semiconductor Llc | Trench dmos device with improved termination structure for high voltage applications |
US9356113B2 (en) | 2012-09-05 | 2016-05-31 | Institut National Des Sciences Appliquees De Lyon | Method of producing a junction field-effect transistor (JFET) |
JP6135364B2 (ja) * | 2013-07-26 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
DE102014103540B4 (de) * | 2014-03-14 | 2020-02-20 | Infineon Technologies Austria Ag | Halbleiterbauelement und integrierte schaltung |
CN107004714B (zh) * | 2014-11-18 | 2021-09-28 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
US10396215B2 (en) | 2015-03-10 | 2019-08-27 | United Silicon Carbide, Inc. | Trench vertical JFET with improved threshold voltage control |
US10050154B2 (en) | 2015-07-14 | 2018-08-14 | United Silicon Carbide, Inc. | Trench vertical JFET with ladder termination |
US20170018657A1 (en) * | 2015-07-14 | 2017-01-19 | United Silicon Carbide, Inc. | Vertical jfet made using a reduced mask set |
WO2018132458A1 (en) * | 2017-01-13 | 2018-07-19 | United Silicon Carbide, Inc. | Trench vertical jfet with ladder termination |
CN110313071B (zh) * | 2017-02-10 | 2022-03-01 | 三菱电机株式会社 | 半导体装置 |
JP7292295B2 (ja) * | 2018-03-06 | 2023-06-16 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 自己整合フィールドプレートおよびメサ終端構造を有する高出力半導体デバイスならびにこれを製造するための方法 |
EP4345911A1 (en) * | 2022-09-06 | 2024-04-03 | Infineon Technologies Austria AG | Vertical junction field effect transistor including a plurality of mesa regions |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07302896A (ja) * | 1994-04-28 | 1995-11-14 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
JPH1187698A (ja) * | 1997-09-02 | 1999-03-30 | Kansai Electric Power Co Inc:The | 高耐圧半導体装置及びこの装置を用いた電力変換器 |
JPH1187690A (ja) * | 1997-09-12 | 1999-03-30 | Meidensha Corp | 半導体素子 |
JP2003273127A (ja) * | 2002-03-15 | 2003-09-26 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
Family Cites Families (157)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51132779A (en) | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
JPS60201666A (ja) * | 1984-03-27 | 1985-10-12 | Nec Corp | 半導体装置 |
FR2579023B1 (fr) | 1985-03-12 | 1988-06-24 | Silicium Semiconducteur Ssc | Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples |
JPH0669040B2 (ja) * | 1985-05-13 | 1994-08-31 | 株式会社東芝 | 光半導体装置 |
US4648175A (en) * | 1985-06-12 | 1987-03-10 | Ncr Corporation | Use of selectively deposited tungsten for contact formation and shunting metallization |
JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
US5003372A (en) * | 1988-06-16 | 1991-03-26 | Hyundai Electronics Industries Co., Ltd. | High breakdown voltage semiconductor device |
EP0360036B1 (de) * | 1988-09-20 | 1994-06-01 | Siemens Aktiengesellschaft | Planarer pn-Übergang hoher Spannungsfestigkeit |
US5047833A (en) * | 1990-10-17 | 1991-09-10 | International Rectifier Corporation | Solderable front metal contact for MOS devices |
US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
US5362975A (en) * | 1992-09-02 | 1994-11-08 | Kobe Steel Usa | Diamond-based chemical sensors |
US5384470A (en) * | 1992-11-02 | 1995-01-24 | Kobe Steel, Usa, Inc. | High temperature rectifying contact including polycrystalline diamond and method for making same |
US6040617A (en) | 1992-12-22 | 2000-03-21 | Stmicroelectronics, Inc. | Structure to provide junction breakdown stability for deep trench devices |
US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
DE4423068C1 (de) * | 1994-07-01 | 1995-08-17 | Daimler Benz Ag | Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung |
TW286435B (ja) * | 1994-07-27 | 1996-09-21 | Siemens Ag | |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
JP3272242B2 (ja) | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | 半導体装置 |
JPH0936393A (ja) | 1995-07-25 | 1997-02-07 | Denso Corp | ショットキー接合を有する半導体装置の製造方法 |
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
US5967795A (en) * | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
WO1997027626A1 (en) | 1996-01-26 | 1997-07-31 | The Whitaker Corporation | Integrated circuit package having enhanced heat dissipation and grounding |
US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5801836A (en) * | 1996-07-16 | 1998-09-01 | Abb Research Ltd. | Depletion region stopper for PN junction in silicon carbide |
US5753938A (en) * | 1996-08-08 | 1998-05-19 | North Carolina State University | Static-induction transistors having heterojunction gates and methods of forming same |
JP3123452B2 (ja) * | 1996-12-10 | 2001-01-09 | 富士電機株式会社 | ショットキーバリアダイオード |
SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
US6441455B1 (en) * | 1997-03-06 | 2002-08-27 | International Rectifier Corporation | Low dosage field rings for high voltage semiconductor device |
US6100572A (en) * | 1997-03-20 | 2000-08-08 | International Rectifier Corp. | Amorphous silicon combined with resurf region for termination for MOSgated device |
US5932894A (en) * | 1997-06-26 | 1999-08-03 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction |
US20010043172A1 (en) | 1997-08-25 | 2001-11-22 | Mcgrath James M. | Field emission display |
US6207591B1 (en) * | 1997-11-14 | 2001-03-27 | Kabushiki Kaisha Toshiba | Method and equipment for manufacturing semiconductor device |
US6362495B1 (en) * | 1998-03-05 | 2002-03-26 | Purdue Research Foundation | Dual-metal-trench silicon carbide Schottky pinch rectifier |
KR100309490B1 (ko) | 1998-05-21 | 2002-04-24 | 윤종용 | 다용도인쇄장치 |
JP2000022178A (ja) | 1998-06-29 | 2000-01-21 | Sanyo Electric Co Ltd | ショットキーバリアダイオード |
US6054365A (en) * | 1998-07-13 | 2000-04-25 | International Rectifier Corp. | Process for filling deep trenches with polysilicon and oxide |
JP3988262B2 (ja) * | 1998-07-24 | 2007-10-10 | 富士電機デバイステクノロジー株式会社 | 縦型超接合半導体素子およびその製造方法 |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
ATE416479T1 (de) | 1998-12-18 | 2008-12-15 | Infineon Technologies Ag | Leistungshalbleiterbauelement |
JP2002535839A (ja) * | 1999-01-15 | 2002-10-22 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 半導体素子に対するエッジ終端部、エッジ終端部を有するショットキー・ダイオードおよびショットキー・ダイオードの製造方法 |
JP3971062B2 (ja) * | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
DE19943143B4 (de) * | 1999-09-09 | 2008-04-24 | Infineon Technologies Ag | Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung |
KR100462980B1 (ko) | 1999-09-13 | 2004-12-23 | 비쉐이 메저먼츠 그룹, 인코포레이티드 | 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정 |
EP1222694B1 (de) * | 1999-09-22 | 2005-02-02 | SiCED Electronics Development GmbH & Co KG | SiC-Halbleitervorrichtung mit einem Schottky-Kontakt und Verfahren zu deren Herstellung |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6373076B1 (en) | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
JP3804375B2 (ja) * | 1999-12-09 | 2006-08-02 | 株式会社日立製作所 | 半導体装置とそれを用いたパワースイッチング駆動システム |
US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6573537B1 (en) | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
DE10002362A1 (de) | 2000-01-20 | 2001-08-02 | Infineon Technologies Ag | Halbleiterbauelement |
US6699775B2 (en) * | 2000-02-22 | 2004-03-02 | International Rectifier Corporation | Manufacturing process for fast recovery diode |
US6613671B1 (en) * | 2000-03-03 | 2003-09-02 | Micron Technology, Inc. | Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby |
US6624522B2 (en) | 2000-04-04 | 2003-09-23 | International Rectifier Corporation | Chip scale surface mounted device and process of manufacture |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
JP4240752B2 (ja) | 2000-05-01 | 2009-03-18 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6509240B2 (en) * | 2000-05-15 | 2003-01-21 | International Rectifier Corporation | Angle implant process for cellular deep trench sidewall doping |
KR100370231B1 (ko) | 2000-06-13 | 2003-01-29 | 페어차일드코리아반도체 주식회사 | 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지 |
JP2002026056A (ja) | 2000-07-12 | 2002-01-25 | Sony Corp | 半田バンプの形成方法及び半導体装置の製造方法 |
WO2002007312A2 (en) | 2000-07-13 | 2002-01-24 | Isothermal Systems Research, Inc. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
JP2002118268A (ja) | 2000-10-10 | 2002-04-19 | Matsushita Electric Ind Co Ltd | 半導体素子および半導体素子への結線方法 |
DE10052004C1 (de) * | 2000-10-20 | 2002-02-28 | Infineon Technologies Ag | Vertikaler Feldeffekttransistor mit Kompensationszonen und Anschlüssen an einer Seite eines Halbleiterkörpers |
JP4843843B2 (ja) * | 2000-10-20 | 2011-12-21 | 富士電機株式会社 | 超接合半導体素子 |
FR2816113A1 (fr) * | 2000-10-31 | 2002-05-03 | St Microelectronics Sa | Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky |
JP2002158363A (ja) | 2000-11-17 | 2002-05-31 | Matsushita Electric Ind Co Ltd | ショットキバリアダイオードの電極構造 |
JP4088033B2 (ja) * | 2000-11-27 | 2008-05-21 | 株式会社東芝 | 半導体装置 |
US6573128B1 (en) * | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
US6713813B2 (en) * | 2001-01-30 | 2004-03-30 | Fairchild Semiconductor Corporation | Field effect transistor having a lateral depletion structure |
JP4286465B2 (ja) | 2001-02-09 | 2009-07-01 | 三菱電機株式会社 | 半導体装置とその製造方法 |
DE10205345B9 (de) * | 2001-02-09 | 2007-12-20 | Fuji Electric Co., Ltd., Kawasaki | Halbleiterbauelement |
GB0104342D0 (en) * | 2001-02-22 | 2001-04-11 | Koninkl Philips Electronics Nv | Semiconductor devices |
JP4872158B2 (ja) | 2001-03-05 | 2012-02-08 | 住友電気工業株式会社 | ショットキーダイオード、pn接合ダイオード、pin接合ダイオード、および製造方法 |
US7087997B2 (en) * | 2001-03-12 | 2006-08-08 | International Business Machines Corporation | Copper to aluminum interlayer interconnect using stud and via liner |
US7119447B2 (en) | 2001-03-28 | 2006-10-10 | International Rectifier Corporation | Direct fet device for high frequency application |
EP1265295A3 (en) * | 2001-06-04 | 2004-05-12 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide Schottky diode and method for manufacturing the same |
US6764906B2 (en) * | 2001-07-03 | 2004-07-20 | Siliconix Incorporated | Method for making trench mosfet having implanted drain-drift region |
US6621122B2 (en) * | 2001-07-06 | 2003-09-16 | International Rectifier Corporation | Termination structure for superjunction device |
US20030030051A1 (en) * | 2001-08-09 | 2003-02-13 | International Rectifier Corporation | Superjunction device with improved avalanche capability and breakdown voltage |
JP4602609B2 (ja) | 2001-08-28 | 2010-12-22 | 東芝キヤリア株式会社 | 空気調和機 |
JP4288907B2 (ja) * | 2001-08-29 | 2009-07-01 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6855981B2 (en) * | 2001-08-29 | 2005-02-15 | Denso Corporation | Silicon carbide power device having protective diode |
JP2003124437A (ja) | 2001-10-19 | 2003-04-25 | Mitsubishi Electric Corp | 半導体装置 |
US20040262685A1 (en) | 2001-11-01 | 2004-12-30 | Zingg Rene Paul | Thin film lateral soi power device |
US6825514B2 (en) * | 2001-11-09 | 2004-11-30 | Infineon Technologies Ag | High-voltage semiconductor component |
JP3891838B2 (ja) | 2001-12-26 | 2007-03-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
DE10164494B9 (de) * | 2001-12-28 | 2014-08-21 | Epcos Ag | Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung |
JPWO2003065459A1 (ja) * | 2002-01-28 | 2005-05-26 | 三菱電機株式会社 | 半導体装置 |
JP4126915B2 (ja) * | 2002-01-30 | 2008-07-30 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
GB0202437D0 (en) * | 2002-02-02 | 2002-03-20 | Koninkl Philips Electronics Nv | Cellular mosfet devices and their manufacture |
US6622380B1 (en) * | 2002-02-12 | 2003-09-23 | Micron Technology, Inc. | Methods for manufacturing microelectronic devices and methods for mounting microelectronic packages to circuit boards |
US6693308B2 (en) * | 2002-02-22 | 2004-02-17 | Semisouth Laboratories, Llc | Power SiC devices having raised guard rings |
JP4126359B2 (ja) | 2002-03-01 | 2008-07-30 | 新電元工業株式会社 | 炭化けい素ショットキーダイオードおよびその製造方法 |
US6855970B2 (en) * | 2002-03-25 | 2005-02-15 | Kabushiki Kaisha Toshiba | High-breakdown-voltage semiconductor device |
US7262434B2 (en) * | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
JP3890311B2 (ja) | 2002-03-28 | 2007-03-07 | ローム株式会社 | 半導体装置およびその製造方法 |
EP1351298B1 (de) | 2002-03-28 | 2007-12-26 | Infineon Technologies AG | Method for producing a semiconductor wafer |
JP3828036B2 (ja) | 2002-03-28 | 2006-09-27 | 三菱電機株式会社 | 樹脂モールド型デバイスの製造方法及び製造装置 |
JP3993458B2 (ja) * | 2002-04-17 | 2007-10-17 | 株式会社東芝 | 半導体装置 |
JP2004079988A (ja) | 2002-06-19 | 2004-03-11 | Toshiba Corp | 半導体装置 |
US7064637B2 (en) | 2002-07-18 | 2006-06-20 | Wispry, Inc. | Recessed electrode for electrostatically actuated structures |
US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
JP4122880B2 (ja) | 2002-07-24 | 2008-07-23 | 住友電気工業株式会社 | 縦型接合型電界効果トランジスタ |
US6975023B2 (en) | 2002-09-04 | 2005-12-13 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
US6812282B2 (en) | 2002-09-10 | 2004-11-02 | Bayer Polymers Llc | Thermoplastic compositions providing matt surface |
JP2004111759A (ja) | 2002-09-20 | 2004-04-08 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法 |
US6777800B2 (en) | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
JP2004134547A (ja) * | 2002-10-10 | 2004-04-30 | Hitachi Ltd | 半導体装置 |
US7265045B2 (en) * | 2002-10-24 | 2007-09-04 | Megica Corporation | Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging |
US6936913B2 (en) * | 2002-12-11 | 2005-08-30 | Northrop Grumman Corporation | High performance vias for vertical IC packaging |
US7248035B2 (en) * | 2002-12-12 | 2007-07-24 | Analog Devices, Inc. | Automatic test equipment pin channel with T-coil compensation |
US6979862B2 (en) * | 2003-01-23 | 2005-12-27 | International Rectifier Corporation | Trench MOSFET superjunction structure and method to manufacture |
JP3721172B2 (ja) * | 2003-04-16 | 2005-11-30 | 株式会社東芝 | 半導体装置 |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP4209260B2 (ja) * | 2003-06-04 | 2009-01-14 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US20050012143A1 (en) | 2003-06-24 | 2005-01-20 | Hideaki Tanaka | Semiconductor device and method of manufacturing the same |
US6790759B1 (en) * | 2003-07-31 | 2004-09-14 | Freescale Semiconductor, Inc. | Semiconductor device with strain relieving bump design |
US7073890B2 (en) | 2003-08-28 | 2006-07-11 | Eastman Kodak Company | Thermally conductive thermal actuator and liquid drop emitter using same |
JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
US20050067630A1 (en) * | 2003-09-25 | 2005-03-31 | Zhao Jian H. | Vertical junction field effect power transistor |
KR100975521B1 (ko) | 2003-10-04 | 2010-08-12 | 삼성전자주식회사 | 발광 소자 조립체 |
US7109520B2 (en) | 2003-10-10 | 2006-09-19 | E. I. Du Pont De Nemours And Company | Heat sinks |
US6949454B2 (en) * | 2003-10-08 | 2005-09-27 | Texas Instruments Incorporated | Guard ring structure for a Schottky diode |
US7166890B2 (en) * | 2003-10-21 | 2007-01-23 | Srikant Sridevan | Superjunction device with improved ruggedness |
US8368223B2 (en) | 2003-10-24 | 2013-02-05 | International Rectifier Corporation | Paste for forming an interconnect and interconnect formed from the paste |
US7315081B2 (en) | 2003-10-24 | 2008-01-01 | International Rectifier Corporation | Semiconductor device package utilizing proud interconnect material |
US20050091988A1 (en) | 2003-10-29 | 2005-05-05 | Stewart Neal G. | Temperature controlled food transport containers suitable for limited power capacity vehicles |
JP2005191227A (ja) * | 2003-12-25 | 2005-07-14 | Sanyo Electric Co Ltd | 半導体装置 |
US7901994B2 (en) | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
WO2005076327A1 (ja) * | 2004-02-06 | 2005-08-18 | Matsushita Electric Industrial Co., Ltd. | 炭化珪素半導体素子及びその製造方法 |
US8368211B2 (en) * | 2004-03-11 | 2013-02-05 | International Rectifier Corporation | Solderable top metalization and passivation for source mounted package |
JP2007529908A (ja) | 2004-03-19 | 2007-10-25 | フェアチャイルド・セミコンダクター・コーポレーション | 炭化ケイ素上に耐久性接触を有するデバイスおよびその製造方法 |
US7507650B2 (en) | 2004-03-26 | 2009-03-24 | Central Research Institute Of Electric Power Industry | Process for producing Schottky junction type semiconductor device |
JP4021448B2 (ja) | 2004-03-26 | 2007-12-12 | 財団法人電力中央研究所 | ショットキー接合型半導体装置の製造方法 |
JP2005286197A (ja) | 2004-03-30 | 2005-10-13 | Shindengen Electric Mfg Co Ltd | 半導体装置およびその製造方法 |
JP2005303218A (ja) | 2004-04-16 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7384826B2 (en) * | 2004-06-29 | 2008-06-10 | International Rectifier Corporation | Method of forming ohmic contact to a semiconductor body |
FR2873467A1 (fr) * | 2004-07-26 | 2006-01-27 | Proton World Internatinal Nv | Enregistrement d'une cle dans un circuit integre |
JP3914226B2 (ja) | 2004-09-29 | 2007-05-16 | 株式会社東芝 | 高耐圧半導体装置 |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
TWI278090B (en) | 2004-10-21 | 2007-04-01 | Int Rectifier Corp | Solderable top metal for SiC device |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US8901699B2 (en) * | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7492003B2 (en) * | 2006-01-24 | 2009-02-17 | Siliconix Technology C. V. | Superjunction power semiconductor device |
US7659588B2 (en) * | 2006-01-26 | 2010-02-09 | Siliconix Technology C. V. | Termination for a superjunction device |
US20070228505A1 (en) * | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
JP4189415B2 (ja) | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
KR101193453B1 (ko) | 2006-07-31 | 2012-10-24 | 비쉐이-실리코닉스 | 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 |
TWI351087B (en) | 2007-10-16 | 2011-10-21 | Unimicron Technology Corp | Package substrate and method for fabricating the same |
-
2006
- 2006-03-01 US US11/365,291 patent/US9419092B2/en active Active
- 2006-03-03 JP JP2006057044A patent/JP5199544B2/ja active Active
- 2006-03-03 EP EP06004364A patent/EP1699083B1/en active Active
- 2006-03-03 AT AT06004364T patent/ATE523899T1/de not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07302896A (ja) * | 1994-04-28 | 1995-11-14 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
JPH1187698A (ja) * | 1997-09-02 | 1999-03-30 | Kansai Electric Power Co Inc:The | 高耐圧半導体装置及びこの装置を用いた電力変換器 |
JPH1187690A (ja) * | 1997-09-12 | 1999-03-30 | Meidensha Corp | 半導体素子 |
JP2003273127A (ja) * | 2002-03-15 | 2003-09-26 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
JP2015065469A (ja) * | 2010-03-08 | 2015-04-09 | クリー インコーポレイテッドCree Inc. | ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 |
JP2013098268A (ja) * | 2011-10-31 | 2013-05-20 | Hitachi Ltd | トレンチ型ショットキー接合型半導体装置及びその製造方法 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US9935193B2 (en) | 2012-02-09 | 2018-04-03 | Siliconix Technology C. V. | MOSFET termination trench |
WO2013120010A1 (en) * | 2012-02-09 | 2013-08-15 | Vishay-Siliconix | Mosfet termination trench |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US10229988B2 (en) | 2012-05-30 | 2019-03-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
US10283587B2 (en) | 2014-06-23 | 2019-05-07 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
US10340377B2 (en) | 2014-08-19 | 2019-07-02 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
WO2019116684A1 (ja) * | 2017-12-15 | 2019-06-20 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JPWO2019116684A1 (ja) * | 2017-12-15 | 2020-12-03 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US11282925B2 (en) | 2017-12-15 | 2022-03-22 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
JP7247892B2 (ja) | 2017-12-15 | 2023-03-29 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060214242A1 (en) | 2006-09-28 |
JP5199544B2 (ja) | 2013-05-15 |
EP1699083A2 (en) | 2006-09-06 |
EP1699083A3 (en) | 2009-01-07 |
ATE523899T1 (de) | 2011-09-15 |
US9419092B2 (en) | 2016-08-16 |
EP1699083B1 (en) | 2011-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5199544B2 (ja) | 炭化シリコントレンチ装置の終端構造 | |
KR102259531B1 (ko) | 고전압 mosfet 장치 및 상기 장치의 제조방법 | |
US9041173B2 (en) | Semiconductor device | |
JP4328616B2 (ja) | 半導体装置用のトレンチ構造 | |
JP2019071313A (ja) | 半導体装置 | |
JP2005150246A (ja) | 半導体装置 | |
US10418476B2 (en) | Silicon carbide semiconductor device | |
JP2014131008A (ja) | ワイドバンドギャップ半導体装置 | |
CN110071169A (zh) | 具有体接触与介电间隔部的半导体器件及对应的制造方法 | |
TW201108394A (en) | Field effect transistor with integrated tjbs diode | |
JP2016009712A (ja) | 炭化珪素半導体装置 | |
JP2018060984A (ja) | 半導体装置 | |
CN112201690A (zh) | Mosfet晶体管 | |
USRE48259E1 (en) | Semiconductor device | |
CN103227193B (zh) | 具有边缘终端结构的半导体器件 | |
JP2013069783A (ja) | 電力用半導体装置 | |
JP7353925B2 (ja) | 半導体装置 | |
US20140103439A1 (en) | Transistor Device and Method for Producing a Transistor Device | |
JP2012238898A (ja) | ワイドバンドギャップ半導体縦型mosfet | |
KR102387574B1 (ko) | 전력 반도체 소자 | |
CN115715428A (zh) | 具有混合栅极结构的功率装置 | |
JP2009054961A (ja) | 半導体装置 | |
JP2019145646A (ja) | 半導体装置 | |
JP2016207829A (ja) | 絶縁ゲート型スイッチング素子 | |
JP4692481B2 (ja) | 高耐圧横型mosfetを備える半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090904 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090915 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091215 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100315 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110215 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110511 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110516 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110815 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111004 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120104 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120404 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120919 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121030 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130208 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5199544 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |