JP2006237605A - セルダイオードを採用する相変移記憶素子及びその製造方法 - Google Patents

セルダイオードを採用する相変移記憶素子及びその製造方法 Download PDF

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Publication number
JP2006237605A
JP2006237605A JP2006043096A JP2006043096A JP2006237605A JP 2006237605 A JP2006237605 A JP 2006237605A JP 2006043096 A JP2006043096 A JP 2006043096A JP 2006043096 A JP2006043096 A JP 2006043096A JP 2006237605 A JP2006237605 A JP 2006237605A
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semiconductor
phase change
conductivity type
pattern
change memory
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JP2006237605A5 (enExample
Inventor
Woo-Yeong Cho
趙佑榮
Du-Eung Kim
金杜應
Yun-Seung Shin
辛允承
Hyun-Geun Byun
卞賢根
Sang-Beom Kang
姜尚範
Hakuko Cho
趙栢衡
Choong-Keun Kwak
郭忠根
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2006237605A publication Critical patent/JP2006237605A/ja
Publication of JP2006237605A5 publication Critical patent/JP2006237605A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2006043096A 2005-02-24 2006-02-20 セルダイオードを採用する相変移記憶素子及びその製造方法 Pending JP2006237605A (ja)

Applications Claiming Priority (1)

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KR1020050015564A KR100663358B1 (ko) 2005-02-24 2005-02-24 셀 다이오드들을 채택하는 상변이 기억소자들 및 그 제조방법들

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JP2006237605A true JP2006237605A (ja) 2006-09-07
JP2006237605A5 JP2006237605A5 (enExample) 2011-09-01

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JP2006043096A Pending JP2006237605A (ja) 2005-02-24 2006-02-20 セルダイオードを採用する相変移記憶素子及びその製造方法
JP2012224841A Pending JP2013033991A (ja) 2005-02-24 2012-10-10 セルダイオードを採用する相変移記憶素子及びその製造方法

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US (2) US7427531B2 (enExample)
EP (1) EP1696441A1 (enExample)
JP (2) JP2006237605A (enExample)
KR (1) KR100663358B1 (enExample)
CN (1) CN100557811C (enExample)

Cited By (8)

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JP2008124475A (ja) * 2006-11-13 2008-05-29 Samsung Electronics Co Ltd セルダイオードを備えた不揮発性メモリ素子及びその製造方法
JP2008311663A (ja) * 2007-06-14 2008-12-25 Samsung Electronics Co Ltd メモリ素子
WO2009075073A1 (ja) * 2007-12-10 2009-06-18 Panasonic Corporation 不揮発性記憶装置およびその製造方法
JP2010010688A (ja) * 2008-06-26 2010-01-14 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
JP2010225888A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 半導体装置の製造方法
JP2010539729A (ja) * 2007-09-19 2010-12-16 マイクロン テクノロジー， インク． クロスポイント型可変抵抗材料メモリの埋め込み低抵抗金属ワード線
US8040720B2 (en) 2008-05-19 2011-10-18 Samsung Electronics Co., Ltd. Phase-change memory device including biasing circuit
US8866116B2 (en) 2011-01-20 2014-10-21 Samsung Electronics Co., Ltd. Semiconductor memory devices having predetermined conductive metal levels and methods of fabricating the same

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US7651906B2 (en) * 2005-06-20 2010-01-26 Samsung Electronics Co., Ltd. Integrated circuit devices having a stress buffer spacer and methods of fabricating the same
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US7875513B2 (en) * 2006-04-26 2011-01-25 Fabio Pellizzer Self-aligned bipolar junction transistors
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KR100782496B1 (ko) * 2006-11-09 2007-12-05 삼성전자주식회사 자기 정렬된 셀 다이오드를 갖는 반도체 소자의 제조방법및 이를 이용하는 상변화 기억소자의 제조방법
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KR100809725B1 (ko) 2007-03-27 2008-03-07 삼성전자주식회사 스트랩핑 콘택 피치가 개선된 반도체 메모리소자
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