JP2005079584A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2005079584A
JP2005079584A JP2004247635A JP2004247635A JP2005079584A JP 2005079584 A JP2005079584 A JP 2005079584A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2005079584 A JP2005079584 A JP 2005079584A
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JP
Japan
Prior art keywords
liquid
immersion liquid
substrate
less
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004247635A
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English (en)
Japanese (ja)
Inventor
Marcel Mathijs Theodore Marie Dierichs
マシュス テオドレ マリー ディーリヒス マルセル
Sjoerd Nicolaas Lambertus Donders
ニコラース ラムベルテュス ドンデルス ショエルト
Johannes Henricus Wilhelmus Jacobs
ヘンリクス ヴィルヘルムス ヤコブス ヨハネス
Hans Jansen
ヤンセン ハンス
Erik Roelof Loopstra
ロエロフ ロープシュトラ エリク
Johannes Sophia Maria Mertens Jeroen
ヨハネス ソフィア マリア メルテンス ジェロエン
Marco Koert Stavenga
コエルト シュタフェンガ マルコ
Bob Streefkerk
シュトレーフケルク ボブ
Martinus Cornelis Maria Verhagen
コーネリス マリア フェルハゲン マルティヌス
Lejla Seuntiens-Gruda
ソインティーンス − グルダ レユラ
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ASML Netherlands BV
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ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2005079584A publication Critical patent/JP2005079584A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02—Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/025—Reverse osmosis; Hyperfiltration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0031—Degasification of liquids by filtration
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C02F1/283—Treatment of water, waste water, or sewage by sorption using coal, charred products, or inorganic mixtures containing them
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Hydrology & Water Resources (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Urology & Nephrology (AREA)
JP2004247635A 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法 Pending JP2005079584A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03255376 2003-08-29

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2007339406A Division JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Division JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Division JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法

Publications (1)

Publication Number Publication Date
JP2005079584A true JP2005079584A (ja) 2005-03-24

Family

ID=34400571

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2004247635A Pending JP2005079584A (ja) 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Country Status (8)

Country Link
US (6) US7733459B2 (enExample)
EP (3) EP2284613B1 (enExample)
JP (5) JP2005079584A (enExample)
KR (1) KR100659257B1 (enExample)
CN (2) CN1591192B (enExample)
DE (1) DE602004029970D1 (enExample)
SG (1) SG109609A1 (enExample)
TW (1) TWI245163B (enExample)

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WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2006190997A (ja) * 2004-12-09 2006-07-20 Nikon Corp 露光装置、露光方法及びデバイス製造方法
WO2006080250A1 (ja) * 2005-01-25 2006-08-03 Jsr Corporation 液浸型露光システム、液浸型露光用液体のリサイクル方法及び供給方法
JP2007081373A (ja) * 2005-09-13 2007-03-29 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ方法及びその装置
WO2007072818A1 (ja) * 2005-12-19 2007-06-28 Nikon Corporation 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007286162A (ja) * 2006-04-13 2007-11-01 Nikon Corp 液浸顕微鏡装置
JP2009267405A (ja) * 2008-04-25 2009-11-12 Asml Netherlands Bv 液浸リソグラフィに関する方法及び液浸リソグラフィ装置
JP2011066451A (ja) * 2006-09-07 2011-03-31 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP5040653B2 (ja) * 2005-08-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2018534608A (ja) * 2015-09-24 2018-11-22 ズース マイクロテク フォトマスク エクイップメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＳｕｓｓ ＭｉｃｒｏＴｅｃ Ｐｈｏｔｏｍａｓｋ Ｅｑｕｉｐｍｅｎｔ ＧｍｂＨ ＆ Ｃｏ． ＫＧ 紫外線に暴露された水性液体媒体で基板を処理する方法

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US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
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WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
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US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
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WO2007061483A1 (en) * 2005-11-23 2007-05-31 E.I. Du Pont De Nemours And Company Apparatus for recycling alkane immersion liquids and methods of employment
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
EP1965414A4 (en) * 2005-12-06 2010-08-25 Nikon Corp EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
US7714980B2 (en) * 2006-02-15 2010-05-11 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure system
JP2007242774A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
JP2009545136A (ja) * 2006-07-21 2009-12-17 インテグリス・インコーポレーテッド 浸漬流体を調整するための装置および方法
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
WO2008108253A2 (en) * 2007-02-23 2008-09-12 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
KR101423611B1 (ko) * 2008-01-16 2014-07-30 삼성전자주식회사 기판 처리 장치, 노광 장치 및 클리닝 툴의 세정 방법
JP4964904B2 (ja) * 2008-01-23 2012-07-04 エーエスエムエル ホールディング エヌ．ブイ． 液浸流体再循環システムを有する液浸リソグラフィ装置
JP2009218344A (ja) * 2008-03-10 2009-09-24 Canon Inc 露光装置および露光方法
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
CN103987664B (zh) 2011-12-06 2017-03-08 德尔塔阀门公司 龙头中的臭氧分配
US12350627B2 (en) 2013-02-28 2025-07-08 Aqua Membranes, Inc. Permeate flow patterns
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
KR102101350B1 (ko) * 2013-03-15 2020-04-17 삼성전자주식회사 파티클 카운터 및 그를 구비한 임멀젼 노광 설비
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
DE102014004511A1 (de) * 2014-03-28 2015-10-01 Carl Zeiss Microscopy Gmbh Verfahren zum Beenden mikroskopischer Anwendungen mit einem Immersionsobjektiv
WO2015158444A1 (en) * 2014-04-14 2015-10-22 Asml Netherlands B.V. Flows of optimization for lithographic processes
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
DE102015218053A1 (de) * 2015-09-21 2017-03-23 Eta Plus Electronic Gmbh Vorrichtung zur UV-Bestrahlung eines strömenden Mediums
CN115093008B (zh) 2015-12-21 2024-05-14 德尔塔阀门公司 包括消毒装置的流体输送系统
US11376552B2 (en) 2016-09-20 2022-07-05 Aqua Membranes Inc. Permeate flow paterns
WO2018094288A2 (en) 2016-11-19 2018-05-24 Aqua Membranes Llc Flow directing devices for spiral-wound elements
JP7086098B2 (ja) 2017-04-12 2022-06-17 アクア メンブレインズ，インコーポレイテッド 濾過巻き要素のための段階的なスペーサ
CN206881955U (zh) * 2017-04-17 2018-01-16 福建西河卫浴科技有限公司 一种离心散水结构及花洒
US11745143B2 (en) 2017-04-20 2023-09-05 Aqua Membranes, Inc. Mixing-promoting spacer patterns for spiral-wound elements
EP3612293A4 (en) 2017-04-20 2020-12-30 Aqua Membranes, Inc. GROUNDS FOR NON-SNAP AND NON-DEFORMATION FOR SPIRAL-WOUND ELEMENTS
JP7167140B2 (ja) 2017-10-13 2022-11-08 アクア メンブレインズ，インコーポレイテッド スパイラル型巻線要素用の橋梁支持及び低減した供給スペーサ
US11898949B2 (en) 2017-12-04 2024-02-13 Shimadzu Corporation Fine bubble elimination method and fine bubble elimination device, and bubble size distribution measuring method and bubble size distribution measuring device
US12157093B2 (en) 2019-01-27 2024-12-03 Aqua Membranes, Inc. Composite membranes
JP7534383B2 (ja) 2019-08-06 2024-08-14 アクア メンブレインズ，インコーポレイテッド スパイラル型エレメントのための好ましい流路
WO2021207256A1 (en) 2020-04-07 2021-10-14 Aqua Membranes Inc. Independent spacers and methods
CN112650031B (zh) * 2020-12-25 2024-07-23 浙江启尔机电技术有限公司 浸液供给装置、光刻系统和浸液品质监测方法
EP4457013A1 (en) 2021-12-28 2024-11-06 Aqua Membranes, Inc. High rejection spiral wound elements with protective features

Family Cites Families (229)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (enExample)
DE224448C (enExample)
DE206607C (enExample)
DE242880C (enExample)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPH0747157B2 (ja) 1985-02-15 1995-05-24 株式会社日立製作所 超純水製造装置
JPS61187984U (enExample) 1985-05-15 1986-11-22
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (enExample) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (enExample) 1986-01-24 1987-08-01
JPS63108724A (ja) * 1986-10-27 1988-05-13 Japan Organo Co Ltd 半導体洗浄用超純水の製造方法
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0517223Y2 (enExample) 1987-01-05 1993-05-10
JPS63157419U (enExample) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
WO1991017483A1 (de) 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
US5053060A (en) * 1990-06-29 1991-10-01 Molecular Devices Corporation Device and method for degassing, gassing and debubbling liquids
US5425227A (en) 1990-06-29 1995-06-20 Zinser Textilmaschinen Gmbh Protecting a textile process liquid before application to a filament
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH05136114A (ja) * 1991-11-08 1993-06-01 Tadahiro Omi 超純水供給装置及び基体洗浄方法並びに超純水製造装置及び超純水製造方法
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP2783376B2 (ja) * 1993-03-15 1998-08-06 株式会社日立サイエンスシステムズ 自動化学分析装置
JP3390203B2 (ja) * 1993-03-23 2003-03-24 株式会社日本フォトサイエンス 紫外線殺菌液の菌の光回復阻止法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3426072B2 (ja) 1996-01-17 2003-07-14 オルガノ株式会社 超純水製造装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5938922A (en) 1997-08-19 1999-08-17 Celgard Llc Contactor for degassing liquids
US5997745A (en) * 1998-04-08 1999-12-07 Zenon Environmental Inc. Method for producing high purity water using triple pass reverse osmosis (TPRO)
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000051865A (ja) * 1998-08-06 2000-02-22 Kurita Water Ind Ltd 電気再生型脱塩装置
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000087579A (ja) * 1998-09-11 2000-03-28 Toshiba Corp 海洋深層水の多目的利用プラント
JP2000266763A (ja) * 1999-03-18 2000-09-29 Hitachi Ltd 自動分析装置
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001153855A (ja) * 1999-11-29 2001-06-08 Japan Organo Co Ltd 不純物濃度分析方法およびシステム
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
ES2270976T3 (es) * 2000-01-18 2007-04-16 Asahi Kasei Kabushiki Kaisha Metodo para la purificacion de agua por filtrado por membrana.
JP2001272604A (ja) 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
JP3895540B2 (ja) * 2000-06-21 2007-03-22 三徳化学工業株式会社 精製過酸化水素水の製造方法
JP2004123762A (ja) 2000-06-30 2004-04-22 Nippon Zeon Co Ltd 洗浄剤および洗浄方法
JP4447126B2 (ja) * 2000-07-10 2010-04-07 野村マイクロ・サイエンス株式会社 超純水製造装置
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6423223B1 (en) * 2000-08-31 2002-07-23 Donald A. Northcut Multi-element, reverse osmosis, liquid filter system with flushing and filtering circuits
WO2002022232A1 (en) * 2000-09-13 2002-03-21 Mykrolis Corporation Liquid filtration device
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002273442A (ja) * 2001-03-23 2002-09-24 Kurita Water Ind Ltd 純水製造装置および純水製造方法
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2002355683A (ja) * 2001-05-29 2002-12-10 Kurita Water Ind Ltd 超純水製造方法及び超純水製造装置
MY135800A (en) * 2001-06-20 2008-06-30 Matsushita Electric Industrial Co Ltd Cleaning apparatus and cleaning method for magnetic transfer master or magnetic record reproducing apparatus using the same
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
US6607668B2 (en) * 2001-08-17 2003-08-19 Technology Ventures, Inc. Water purifier
JP4661009B2 (ja) * 2001-09-04 2011-03-30 栗田工業株式会社 超純水製造システム
AT410406B (de) 2001-09-17 2003-04-25 Andritz Ag Maschf Verfahren und vorrichtung zur belüftung einer flüssigkeit mit gas
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
JP3849766B2 (ja) * 2001-10-26 2006-11-22 栗田工業株式会社 有機物含有水の処理装置及び処理方法
JP3878452B2 (ja) * 2001-10-31 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
WO2003040830A2 (en) 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
JP2003145146A (ja) * 2001-11-12 2003-05-20 Hitachi Ltd 超純水の製造方法及びその製造装置
CN1423147A (zh) * 2001-12-05 2003-06-11 株式会社尼康 投影光学系统和具有该投影光学系统的曝光装置
JP4159823B2 (ja) * 2001-12-11 2008-10-01 野村マイクロ・サイエンス株式会社 超純水製造方法
JP3572357B2 (ja) 2001-12-17 2004-09-29 防衛庁技術研究本部長 ハンガ装置
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6858145B2 (en) * 2002-09-12 2005-02-22 Chemitreat Pte Ltd Method of removing organic impurities from water
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60319658T2 (de) 2002-11-29 2009-04-02 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1586386A4 (en) 2002-12-03 2010-04-21 Nikon Corp METHOD AND DEVICE FOR REMOVING CONTAMINATION AND EXPOSURE METHOD AND DEVICE
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
EP1571701A4 (en) * 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
CN100429748C (zh) 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4608876B2 (ja) * 2002-12-10 2011-01-12 株式会社ニコン 露光装置及びデバイス製造方法
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
GB0229345D0 (en) 2002-12-17 2003-01-22 Safe T Ltd Hollow needle applicators
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
EP1598855B1 (en) * 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
WO2004090956A1 (ja) 2003-04-07 2004-10-21 Nikon Corporation 露光装置及びデバイス製造方法
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP2161621B1 (en) * 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
JP2004327638A (ja) 2003-04-24 2004-11-18 Matsushita Electric Ind Co Ltd 薄膜塗布装置
JP2004327747A (ja) 2003-04-25 2004-11-18 Matsushita Electric Ind Co Ltd 薬液塗布装置
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
US7485671B2 (en) * 2003-05-16 2009-02-03 Velocys, Inc. Process for forming an emulsion using microchannel process technology
JP5058550B2 (ja) 2003-05-23 2012-10-24 株式会社ニコン 露光装置、露光方法、デバイス製造方法、及び液体回収方法
JP2004356205A (ja) 2003-05-27 2004-12-16 Tadahiro Omi スキャン型露光装置および露光方法
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005015315A2 (de) 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
TWI475596B (zh) 2003-08-29 2015-03-01 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1517184A1 (en) 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101238134B1 (ko) 2003-09-26 2013-02-28 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
TWI311691B (en) 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US20050173647A1 (en) 2003-11-07 2005-08-11 Asml Netherlands B.V. Radiation detector assembly, lithographic apparatus, method of determining an amount of radiation, an intensity of the amount of radiation, or an amount of contamination of an optical element, device manufacturing method, and device manufactured thereby
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100555083C (zh) 2003-12-23 2009-10-28 皇家飞利浦电子股份有限公司 用于浸入式光刻的可除去薄膜
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2005209705A (ja) 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4548341B2 (ja) 2004-02-10 2010-09-22 株式会社ニコン 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
JP2005236047A (ja) 2004-02-19 2005-09-02 Canon Inc 露光装置及び方法
US7402377B2 (en) 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
US7465667B2 (en) 2004-03-08 2008-12-16 E.I. Du Pont De Nemours And Company Highly purified liquid perfluoro-n-alkanes and method for preparing
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7580111B2 (en) 2004-05-21 2009-08-25 Jsr Corporation Liquid for immersion exposure and immersion exposure method
JP2008502154A (ja) 2004-06-01 2008-01-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 紫外線透過性アルカンと、これを真空用途および深紫外線用途に利用する方法
US7224456B1 (en) 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
JP4655763B2 (ja) 2004-06-04 2011-03-23 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2005353763A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2006024882A (ja) 2004-06-11 2006-01-26 Matsushita Electric Ind Co Ltd 薄膜塗布装置および薄膜塗布方法ならびに液侵露光装置および液侵露光方法
JP4677833B2 (ja) 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
US7158208B2 (en) 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4740666B2 (ja) 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006024692A (ja) 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
US7050147B2 (en) 2004-07-08 2006-05-23 Asml Netherlands B.V. Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus
US7259827B2 (en) 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
US20060012788A1 (en) 2004-07-19 2006-01-19 Asml Netherlands B.V. Ellipsometer, measurement device and method, and lithographic apparatus and method
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP2006049757A (ja) 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4772306B2 (ja) 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
WO2006029824A2 (en) 2004-09-16 2006-03-23 Carl Zeiss Smt Ag Monitoring element for lithographic projection systems
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
EP1814144B1 (en) 2004-10-26 2012-06-06 Nikon Corporation Substrate processing method and device production system
US7156925B1 (en) 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Using supercritical fluids to clean lenses and monitor defects
WO2006051909A1 (ja) 2004-11-11 2006-05-18 Nikon Corporation 露光方法、デバイス製造方法、及び基板
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
JP4487907B2 (ja) 2004-11-19 2010-06-23 株式会社ニコン メンテナンス方法、露光方法、露光装置及びデバイス製造方法
WO2006062065A1 (ja) 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
WO2006115268A1 (ja) 2005-04-26 2006-11-02 Mitsui Chemicals, Inc. 液浸式露光用液体、液浸式露光用液体の精製方法および液浸式露光方法
US7078575B1 (en) 2005-06-09 2006-07-18 E. I. Du Pont De Nemours And Company Processes for preparing high purity polycyclic fluoroalkanes
JP2006352032A (ja) 2005-06-20 2006-12-28 Jsr Corp 液浸露光用液体および液浸露光方法
WO2006137410A1 (ja) 2005-06-21 2006-12-28 Nikon Corporation 露光装置及び露光方法、メンテナンス方法、並びにデバイス製造方法
US7262422B2 (en) 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
DE102005040828A1 (de) 2005-08-25 2007-03-08 Carl Zeiss Jena Gmbh Verfahren und Vorrichtung zur Immersion und zur Reinigung der Frontlinse von Mikroskopobjektiven
US7372058B2 (en) 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP2007123775A (ja) 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd 洗浄液および洗浄方法
JP5036996B2 (ja) 2005-10-31 2012-09-26 東京応化工業株式会社 洗浄液および洗浄方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP4964904B2 (ja) * 2008-01-23 2012-07-04 エーエスエムエル ホールディング エヌ．ブイ． 液浸流体再循環システムを有する液浸リソグラフィ装置

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