JP2004048038A - 半導体材料の薄層の製造方法 - Google Patents

半導体材料の薄層の製造方法 Download PDF

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JP2004048038A
JP2004048038A JP2003297987A JP2003297987A JP2004048038A JP 2004048038 A JP2004048038 A JP 2004048038A JP 2003297987 A JP2003297987 A JP 2003297987A JP 2003297987 A JP2003297987 A JP 2003297987A JP 2004048038 A JP2004048038 A JP 2004048038A
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Bernard Aspar
ベルナール・アスパル
Michel Bruel
ミシェル・ブリュエル
Thierry Poumeyrol
ティエリー・プメイロル
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Abstract

【課題】 半導体材料のウェーハから同材料の薄層を製造する方法で薄層をウェーハから分離する段階の過程で薄層表面にこれを劣化するふくれを生じさせないようにする。
【解決手段】 本発明の半導体材料薄層製造方法は、−平らな表面を有する半導体材料のウェーハの中に微小キャビティの層を形成するために表面を通してその表面にふくれを生じさせることの無いドーズ量のイオンを注入する段階、−微小キャビティを隔着させるための熱処理段階、−必要であれば薄層内に少なくとも１つの電子部品を形成する段階、−薄層をウェーハから分離する段階を備える。
【選択図】　図４

Description

　本発明は、半導体材料の薄層の製造方法に関する。製造される薄層には必要に応じて電子部品を備えることができる。
　本発明は、単結晶でも多結晶でも、また更には非結晶（アモルファス）の半導体の薄層を製造でき、例えば、絶縁体上のケイ素（ＳＯＩ）型の基板の製造や、単結晶半導体の自己保持型薄層の製造ができる。これらの薄層または基板に電子回路および（または）マイクロストラクチャアを完全にまたは部分的に形成することができる。
　半導体材料内への希ガスまたは水素のイオンの注入によって、それらイオンの浸透の平均深さに近い深さの所に微小キャビティが形成されることは知られている。仏国特許ＦＲ−Ａ−２６８１４７２号は、この特性を利用した半導体材料の薄膜の製造方法を開示している。この方法は、平らな表面を有する所望の半導体材料のウェーハに下記の処理を施すものである。すなわちそれら処理とは、−第１段階、ウェーハの平らな表面をイオンで衝撃することによるイオン注入の段階。このイオン注入によりウェーハ内のイオン浸透深さに近い深さの所に微小キャビティの層が形成される。この微小キャビティ層はウェーハを、基板になる下側区域と薄膜になる上側区域とに分ける。イオンは希ガスまたは水素ガスのイオンから選ばれ、そしてウェーハの温度は、注入されたイオンが拡散によって半導体から逃げることのできる温度より低く保持される。−第２段階、ウェーハの平らな表面を、硬質材料の少なくとも１つの層で構成される支持サポートに密着接触させる段階。この密着接触は例えば、接着剤によって、あるいは、場合によっては支持サポートとウェーハとの間の原子間結合を良好にする熱的または（および）静電気的処理を用いた両表面の前処理を施すことによって行われる。−第３段階、ウェーハと支持サポートとの組立体の熱処理段階。この熱処理は、イオン注入のときの温度より高く、そして、ウェーハ内の結晶の再配列と微小キャビティの圧力との作用によって薄膜と基板との間の分離を生じせるに充分な温度で行われる。この温度は例えばケイ素の場合５００℃である。
　イオン注入はガスの微小泡の層を形成するのに適している。こうしてウェーハ内の、イオン浸透の平均深さに近い深さの所に形成された微小泡層はウェーハ内に、その層で分離される２つの区域、すなわち、薄膜を構成する区域と残余の基板を構成する区域とを形成する。
　例えば水素のようなガスの打込みの後、その打込みの条件によって、微小キャビティまたは微小泡は透過型電子顕微鏡で観察できることもあり、できないこともある。ケイ素の場合、得られる微小キャビティの寸法は数ｎｍから数１０ｎｍまで様々である。特に打込み温度が低い場合、それら微小キャビティは熱処理段階の過程においてでしか観察することができず、その過程において集合化し、熱処理の最後には微小キャビティ相互は隔合する。
　仏国特許ＦＲ−Ａ−２６８１４７２号に記載の方法は、イオン注入後のウェーハの平らな表面およびその内部に電子回路を作ることができない。そのような回路を形成するためには、ケイ素の場合幾つかの熱処理段階（典型的には４００℃から７００℃）を必要とするマイクロエレクトロニクスの通常的な操作（拡散、蒸着等）を行うことになる。ところでそのような温度では、イオン注入されたウェーハの平らな表面にふくれ（ｂｌｉｓｔｅｒｓ）が形成される。例えばシリコンウェーハに水素イオンを５・１０１６陽子／ｃｍ２ のドーズ量で１００ｋｅＶのエネルギで打込んだ場合、５００℃で３０分間の熱処理によりウェーハの平らな表面の５０％が劣化（ｄｅｇｒａｄａｔｉｏｎ）し、ふくれの出現と破裂（ｂｕｒｓｔｉｎｇ）をもたらす。こうなった場合には、もはや、半導体層をウェーハの残余部から剥離するために、ウェーハの平らな表面を支持サポート（以下、アプリケータと称する）に密着接触させることを正確に行うことはできない。
　水素イオン打込み後のシリコンウェーハの表面に加熱（ａｎｎｅａｌｉｎｇ）後ふくれとクレータが形成されるその現象は、Ｙ．ミシマとＴ．ヤギシタの論文「フーリエ変換赤外線マイクロスペクトロスコピによるＳｉ：Ｈ膜内の泡形成機構の研究」（Ｊ．Ａｐｐｌ．Ｐｈｅｓ．６４（８）、１９８８年１０月１５日、ｐｐ．３９７２−３９７４）の中で論じられている。
仏国特許ＦＲ−Ａ−２６８１４７２号 特開平８−９７３８９号公報 Ｙ．ミシマとＴ．ヤギシタの論文「フーリエ変換赤外線マイクロスペクトロスコピによるＳｉ：Ｈ膜内の泡形成機構の研究」（Ｊ．Ａｐｐｌ．Ｐｈｅｓ．６４（８）、１９８８年１０月１５日、ｐｐ．３９７２−３９７４）
　本発明は、仏国特許ＦＲ−Ａ−２６８１４７２号に記載の方法を改良しようとするものである。本発明では、ある適当なドーズ量のイオン注入段階の後で、かつ分離段階の前に、ウェーハの平らな表面の状態の劣化と薄層の分離とを起こすこと無しに、ウェーハの薄層となる部分を、特にケイ素の場合では４００℃から７００℃で熱処理する。この中間熱処理は、電子部品形成操作の一部とすることができ、あるいはその他の目的のために挿入することもできる。
　本発明はまた、薄層が大きい機械的強度を備えるに充分な厚さを有する場合にも適用できる。この場合には薄層をウェーハの残余部から分離させるためのアプリケータを使用する必要はないが、いずれにしても平らな表面の欠陥は全く無くすることが望ましい。
　本発明はそこで、次のような平らな表面を有する半導体材料のウェーハから同材料の薄層を提供することを目的とする。この方法はイオン注入の段階を備え、このイオン注入段階は、希ガスまたは水素のイオンから選ばれるイオンを所定の温度と所定のドーズ量で平らな表面を衝撃することより成り、これによって、イオン浸透の平均的な深さに近い深さの所に位置する指標面（ｒｅｆｅｒｅｎｃｅｐｌａｎｅ）と称される平面内に微小キャビティを形成し、さらにこの方法はまた後の熱処理の段階を備え、この熱処理段階は、ウェーハを指標面において２つの部分に分離させるに充分な温度で行われ、平らな表面の側の部分が薄層を構成する半導体材料薄層製造方法であって、−イオン注入段階が最少ドーズ量と最大ドーズ量との間のあるドーズ量で行われるが、最少ドーズ量とは、ウェーハを指標面に沿って脆弱化する微小キャビティを充分に形成できる最少限のドーズ量であり、また最大ドーズ量、または臨界ドーズ量とは、これ以上であれば、熱処理段階のときにウェーハの分離が生じるようなドーズ量であり、−熱処理段階の後またはその間に、ウェーハを指標面において２つの部分に分離させる段階が備えられ、この分離段階は、ウェーハのそれら２つの部分の間に機械的な力を加えることを含む方法である。
　それら機械的力は、単独でまたは組合せて加えられる引張力、剪断力、および撓曲力とされよう。
　微小キャビティである限りにおいて、それらキャビティは様々な形状とすることができる。例えばキャビティは偏平な形状、すなわち高さが小さい（数原子間距離）形状、またはほぼ球形な形状、あるいはその他のあらゆる形状にすることができる。それらキャビティは、自由ガス相、および（または）、キャビティの壁を形成する材料の原子に固定された注入イオンから出てくるガスの原子を容れることができる。それらキャビティは英語の用語で一般的に、「プレートレット（ｐｌａｔｅｌｅｔｓ）」、「マイクロブリスタ（ｍｉｃｒｏｂｌｉｓｔｅｒｓ）」、あるいは「バブル（ｂｕｂｂｌｅｓ）」と称される。
　薄層をウェーハから分離させるための熱処理は微小キャビティを安定状態にする。実際、温度の作用により微小キャビティは相互に合着し、固定状態になる。そこで温度はその状態が得られるように選択される。
　仏国特許ＦＲ−Ａ−２６８１４７２号において、打込みドーズ量は、熱処理によって、直接分離を行える微小キャビティ層を形成するようなものにされている。
　本発明において、ドーズ量は、熱処理の過程で分離を行わせるのには不充分なものにされ、そのドーズ量は単にウェーハの指標面の個所を脆弱にするだけであり、分離は機械的力を加えるという別の段階によって行われるのである。さらに本発明で定義するようなその臨界ドーズ量は、イオン注入段階と熱処理段階の過程でウェーハの平らな表面上にふくれを形成するようなドーズ量より少ないものである。よって、ふくれの問題は本発明では生じない。
　本発明の方法は、熱処理段階と分離段階との間に、薄層を構成する前にウェーハに電子部品（ｃｏｍｐｏｎｅｎｔ）の少なくとも一部または全部を形成する段階を備えることができる。
　その電子部品形成段階が様々な相（ｐｈａｓｅｓ）の熱処理を必要とする場合には、それら熱処理は好適には熱処理段階での温度より低い温度で行われる。
　必要な場合には、分離段階の直前に、ウェーハの平らな表面を支持サポートに密着接触させて固定する追加の段階が備えられ、その支持を介して引張力および（または）剪断力のような機械力が加えられる。
　その支持は可撓性のある支持、例えばカプトン（Ｋａｐｔｏｎ登録商標）のシートとすることができる。また支持は酸化ケイ素のウェーハのような堅固な支持とすることができる。
　以下に添付図面と関連して行う本発明の制約的でない実施形態の記述から本発明はさらによく理解され、そして他の長所と特徴が明らかにされよう。
　本発明の１つの重要な点は、水素または希ガスのイオンの注入が、熱処理において分離、剥離（ｓｅｐａｒａｔｉｏｎ）を起させるようなドーズ量よりも低いかまたは等しいドーズ量で行われることである。その使用されるドーズ量は、ウェーハの材料内へのイオンの平均的な到達距離に対応する深さＲｐの部位の材料を脆弱化するが、しかし電子回路を作るための全ての熱処理段階には耐えるに充分な機械的強度をウェーハが保持することができるようなドーズ量である。換言すると、イオン注入されたウェーハは、その微小キャビティの区域に、ウェーハの薄膜を構成する部分とウェーハの残余部分との間を結合するブリッジを備えている。
　以下の記述は、平らな表面を有する厚い基板から半導体材料の薄層を製造することについて行う。素材の基板は、その平らな表面が、例えば誘電体の被覆材料のような材料の１つまたは複数の層を被せられてもよいし、またそうでなくてもよい。
　図１は、半導体材料でできたウェーハ１へのイオンの注入段階を示す。ウェーハの平らな表面２は、矢印で図示されるイオンの衝撃（ボンバード）を受ける。ウェーハの表面２が１つまたは複数の非半導体材料で被覆されている場合、注入されるイオンのエネルギは、それらイオンを半導体材料のマスの中まで浸透、貫通させることができるように充分強くなければならない。
　いずれにしてもイオン注入される半導体材料の厚さは、薄層に電子部品および（または）マイクロストラクチュアの全部または一部が形成できるような厚さでなければならない。例えばケイ素への水素イオンの平均浸透深さ（ｐｅｎｅｔｒａｔｉｏｎ）は２００ｋｅＶで２μｍである。
　その種類のイオンの半導体基板内へのイオン注入は、平らな表面２に対し直角に進むイオンの平均到達距離Ｒｐに対応する深さに近い深さの所に、微小キャビティを生じさせる原子の集中した高い密度の区域３を形成する。例えば１００ｋｅＶでの２・１０１６Ｈ＋ ／ｃｍ２ のドーズ量の場合、水素の最高密度は１０２１Ｈ＋ ／ｃｍ３ になる。このイオン注入段階は、注入されるガスのイオンが注入段階の間に拡散することがないような温度で行わなければならない。そのような拡散は微小キャビティの形成を攪乱または不能にする。例えばケイ素に水素イオンを注入する場合、そのイオン注入は３５０℃以下の温度で行われる。
　注入ドーズ量（注入中の単位面積当りのイオンの数）は、臨界ドーズ量と等しいかまたはそれ以下となるように選択される。臨界ドーズ量とは、それ以上であれば後続の熱処理段階において薄層がウェーハから分離するような量である。水素イオンの注入の場合、その臨界ドーズ量は、１６０ｋｅＶのエネルギに対し４・１０１６Ｈ＋ ／ｃｍ２ のオーダである。
　注入ドーズ量はまた、最小ドーズ量より多くなるように選択されている。最小ドーズ量とは、それ以上であれば後続の熱処理段階において微小キャビティの形成とそれらキャビティ間の相互作用とが充分に行われる、すなわち微小キャビティ区域３の材料を脆弱にすることができるような量である。そのことは、微小キャビティ間になお半導体材料のソリッド（ｓｏｌｉｄ）ブリッジが存在していることを意味している。水素ガスのイオン注入の場合、最少ドーズ量は、１００ｋｅＶのエネルギで１・１０１６／ｃｍ２ のオーダである。
　本発明の方法における次の段階は、指標面に沿って微小キャビティを相互に隔着させるに充分な温度でウェーハを熱処理することである。ケイ素の基板内へ、１００ｋｅＶのエネルギで３・１０１６Ｈ＋ ／ｃｍ２ のドーズ量の水素ガスのイオンが３５０℃以下の温度で打込まれた場合、５５０℃で３０分間の熱処理した後、断面を走査顕微鏡で検査したところで、高さ数分の１ナノメートル、指標面に沿った幅数ナノメートルから数１０ナノメートルにもなるキャビティが観察される。その熱処理は、打ち込まれたガス原子の、微小キャビティとしての析出（ｐｒｅｃｉｐｉｔａｔｉｏｎ）と安定化を同時に行う。
　微小キャビティ４（図２参照）は指標面において、イオン注入面積とほぼ等しい面積を占める。それらキャビティは全てが正確に同一平面内にあるわけではない。それらキャビティは、指標面から数ナノメートルあるいは数１０ナノメートル離れた指標面に平行な複数の平面内に散在する。このことによって、平らな表面２と指標面との間の基板の上側部分は全体としては基板のマスから分離されない（ここで基板マスとは、平らな表面２以外の基板の面と指標面との間にある基板残余分をいう）。上側部分と基板マスとの間以外の他の結合は、集積回路を作るためのいろいろな技術的段階における取扱いと熱処理（ａｎｎｅａｌｉｎｇ）に耐える充分な強度をもっている。しかし上側部分と基板マスとの間の結合はキャビティ間の半導体材料のブリッジによってのみ行われるから非常に弱くなっている。
　次に平らな表面２（その表面および表面の下）に電子部品、電子回路、およびマイクロストラクチュアの一部または全部が形成される。
　第１段階の水素または希ガスのイオンの注入エネルギは、イオン注入によって形成されるキャビティの区域の深さが、電子部品、電子回路、および（または）マイクロストラクチュアの形成によって攪乱されることのない充分な深さになるように選択される。さらに、電子部品、電子回路、またはマイクロストラクチュアを作るのに伴なう様々な熱処理操作は、注入されたイオンの拡散を最少限にするように選択される。例えば単結晶ケイ素のウェーハの場合、プロセスのいろいろな相における最高温度は好適には９００℃までに限定される。
　図３は、ウェーハ１の平らな表面２と薄層を構成する部分内とに、符号５で指示される複数個の電子部品を形成した場合を示している。
　次に分離段階が来る。この分離段階は、ウェーハまたは基板の指標面の両側の２つの部分の間を分離させる機械的な力、例えば引張力を加えることより成る。その機械力によって現存する堅いブリッジを破壊するのである。この操作によって、上記した場合であれば電子部品５を備えた、半導体材料の薄層が作られる。図４はこの分離段階を示し、この分離段階において、図面に矢印で示される相互に反対方向に作用する力によって薄層６が基板の残余マス７から分離される。
　経験的に知られているところでは、上側部分を基板のマスから分離させるに要する引張力は、特に上側部分と基板マスとの間に剪断力、すなわち指標面に沿った方向の分力を含む力加えた場合には小さくて済む。このことは単純に、剪断力が指標面内のキャビティ間の破断の伝播に好都合であるということで説明できる。
　基板の上側部分は元より薄いものであるから、多くの場合それに対して直接に引張力および（または）剪断力を加えるのは適切でない。そこで好適には、分離段階の前にウェーハの平らな表面２に支持またはアプリケータが固定され、これを介して機械力がウェーハの上側部分に加えられる。そのアプリケータは図４に符号８で指示される。
　アプリケータは硬質または軟質の支持とすることができ、そして任意の接着剤により、または表面処理の上密着接触させることによりウェーハに固定される。この固定はウェーハの表面とアプリケータとの間に充分な結合エネルギが確保され、これにより分離段階の引張および（または）剪断および（または）撓曲の操作に耐えるように行われる。
　アプリケータ８は例えば、基板１の平らな表面２に接着されるカプトン（Ｋａｐｔｏｎ商品名）のようなプラスチック材料のシートとすることができる。この場合、本発明の方法を適用したとき、カプトンのシート上に付けられた単結晶半導体薄層が製造されることになる。
　上側薄層の全体に力を正確に伝達するため、電子部品形成段階において、上側薄層の表面とこれの中に作られる回路に、必要に応じて表面を平らにする役目も持った保護層を被覆してもよい。この場合アプリケータはその保護層を介在してウェーハの上側薄層に固定される。
　アプリケータはまた例えばシリコンウェーハのような硬質の支持とすることができ、これの表面に誘電体層を被せたものにしてもよい。この場合、ウェーハの平らな表面および（または）アプリケータの表面（誘電体層を持っているかまたは持っていない）に適当な物理−化学的処理を施し、場合によっては熱処理を伴なって密着接触を行わせることによりウェーハ表面とアプリケータ表面との固定が行われよう。
　アプリケータが表面に酸化物層を持ったシリコンウェーハであり、そして半導体基板が単結晶シリコンウェーハである上記実施形態の場合、本発明の方法を適用したとき、表面ケイ素層が基板上側部分で作られる薄層である、絶縁体上に付けられたシリコンウェーハが製造される。
　さらに薄層をウェーハから分離した後、その薄層の自由面に追加の基板を積み重ねることも可能で、その追加基板はこれに全部または一部が形成された電子部品を備えるものとすることもできる。そのような積層は電子回路の「３次元」集合体を形成することができる。その補強材（ｓｔｉｆｆｅｎｅｒ）自体にも電子部品を備えることも備えないこともできる。
一方の表面が本発明の方法を行うためのイオンの衝撃を受ける半導体材料のウェーハを概略的に示す。 本発明に従って微小キャビティを合着させる熱処理段階の終了時のウェーハを概略的に示す。 所要の薄層となる部分に電子部品を形成された後のウェーハを概略的に示す。 本発明に従ってウェーハを２つの部分に分離する段階を概略的に示す。
符号の説明
１ 半導体ウェーハ
２ 表面
３ 微小キャビティ区域
４ 微小キャビティ
５ 電子部品
６ 薄層
７ 残余マス
８ アプリケータ
Ｒｐ イオン浸透深さ

Claims (9)

  1. 　平らな表面を有する半導体材料のウェーハから同材料の薄層を製造する方法であって、この方法はイオン注入段階を備え、このイオン注入段階は、希ガスまたは水素のイオンから選ばれるイオンによって所定の温度と所定のドーズ量で前記平らな表面を衝撃することより成り、これによって、イオン浸透の平均的な深さに近い深さの所に位置する指標面と称される平面内に微小キャビティを形成し、更にこの方法は後の熱処理の段階を備え、この熱処理の段階は、前記ウェーハを前記指標面において２つの部分に分離させるに充分な温度で行われ、そこでその前記平らな表面の側の部分が前記薄層を構成する如き、半導体材料薄層製造方法において、
    　−前記イオン注入段階が最少のイオンドーズ量と最大のイオンドーズ量との間のあるイオンドーズ量を以って行われ、しかして該最少ドーズ量とは、前記ウェーハを前記指標面に沿って脆弱化する微小キャビティを充分に形成できる最少限のドーズ量であり、また該最大ドーズ量、または臨界ドーズ量とは、これ以上であれば、前記熱処理段階のときにウェーハの分離が生じるようなドーズ量であり、
    　−前記熱処理段階の後またはその間に、前記ウェーハを前記指標面において２つの部分に分離させる段階が備えられ、この分離段階は、ウェーハのそれら２つの部分の間に機械的な力を加えることを含むことを特徴とする半導体材料薄層製造方法。
  2. 　前記分離段階の直前に、前記ウェーハの前記平らな表面を支持に密着接触させて固定する追加の段階を有し、その支持を介して機械力が加えられることを特徴とする請求項１の半導体材料薄層製造方法。
  3. 　前記支持が軟質の支持であることを特徴とする請求項２の半導体材料薄層製造方法。
  4. 　前記支持が硬質の支持であることを特徴とする請求項２の半導体材料薄層製造方法。
  5. 　前記硬質支持が酸化ケイ素のウェーハであることを特徴とする請求項４の半導体材料薄層製造方法。
  6. 　該半導体材料小板が単結晶ケイ素製であることを特徴とする請求項１の半導体材料薄層総製造方法。
  7. 　該半導体材料ウェーハの前記平らな表面が非半導体材料の層で被覆されることを特徴とする請求項１の半導体材料薄層製造方法。
  8. 　前記非半導体材料が誘電体材料であることを特徴とする請求項７の半導体材料薄層製造方法。
  9. 　前記分離段階のときに加えられる機械力が引張力および（または）剪断力および（または）撓曲力であることを特徴とする請求項１から請求項８までのいずれか一項の半導体材料薄層製造方法。
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JP2018530925A (ja) * 2015-09-18 2018-10-18 胡 兵HU, Bing 半導体基板本体及びその上の機能層を分離する方法
KR20210034376A (ko) * 2019-09-20 2021-03-30 재단법인대구경북과학기술원 전자장치 제조방법
KR102271268B1 (ko) 2019-09-20 2021-06-30 재단법인대구경북과학기술원 전자장치 제조방법
US11367647B2 (en) 2019-09-20 2022-06-21 Daegu Gyeongbuk Institute Of Science And Technology Method of manufacturing electronic device

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US20040166651A1 (en) 2004-08-26
US7067396B2 (en) 2006-06-27
US20010007789A1 (en) 2001-07-12
EP1768176A3 (fr) 2007-04-04
US7498234B2 (en) 2009-03-03
DE69738608T2 (de) 2009-04-30
MY125679A (en) 2006-08-30
FR2748851A1 (fr) 1997-11-21
US6225192B1 (en) 2001-05-01
FR2748851B1 (fr) 1998-08-07
EP0807970A1 (fr) 1997-11-19
US20120133028A1 (en) 2012-05-31
US6020252A (en) 2000-02-01
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JP3517080B2 (ja) 2004-04-05
US20060115961A1 (en) 2006-06-01
TW366527B (en) 1999-08-11
JP4220332B2 (ja) 2009-02-04
EP1768176A2 (fr) 2007-03-28
JPH1050628A (ja) 1998-02-20
SG52966A1 (en) 1998-09-28
EP0807970B1 (fr) 2008-04-02
DE69738608D1 (de) 2008-05-15
US6809009B2 (en) 2004-10-26
US20090130392A1 (en) 2009-05-21
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