FR3109016B1 - Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable - Google Patents
Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable Download PDFInfo
- Publication number
- FR3109016B1 FR3109016B1 FR2003263A FR2003263A FR3109016B1 FR 3109016 B1 FR3109016 B1 FR 3109016B1 FR 2003263 A FR2003263 A FR 2003263A FR 2003263 A FR2003263 A FR 2003263A FR 3109016 B1 FR3109016 B1 FR 3109016B1
- Authority
- FR
- France
- Prior art keywords
- assembly
- interface
- substrate
- demountable structure
- useful layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 6
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
- Structure Of Printed Boards (AREA)
Abstract
L’invention concerne une structure démontable (100) comprenant : - au moins deux interfaces, une interface d’assemblage (30) et une interface de détachement privilégié (1), - un substrat receveur (20), - un substrat donneur (10) comportant une couche utile (3) à transférer disposée sur un substrat initial (2), l’interface de détachement privilégié (1) étant située entre ladite couche utile (3) et le substrat initial (2), et l’interface d’assemblage (30) étant située entre ladite couche utile (3) et le substrat receveur (20). La structure démontable (100) est remarquable en ce que l’interface d’assemblage (30) présente une zone d’interruption d’assemblage (31) comprenant au moins une cavité (31a) présente dans le substrat receveur (20) ou dans la couche utile (3), la zone d’interruption d’assemblage (31) étant localisée dans une région périphérique de la structure démontable (100). Figure 1a
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003263A FR3109016B1 (fr) | 2020-04-01 | 2020-04-01 | Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable |
KR1020227034661A KR20220161343A (ko) | 2020-04-01 | 2021-03-16 | 층들을 전사하거나 핸들링하는데 사용되는 분리 가능한 구조체 및 상기 분리 가능한 구조체를 사용하여 층을 전사하는 방법 |
PCT/FR2021/050435 WO2021198576A1 (fr) | 2020-04-01 | 2021-03-16 | Structure demontable utilisee pour le transfert ou la manipulation de couches, et procede de transfert d'une couche mettant en œuvre ladite structure demontable |
US17/995,547 US20230154755A1 (en) | 2020-04-01 | 2021-03-16 | Removable structure used for the transfer or manipulation of layers, and method for transfer of a layer using said removable structure |
EP21719192.3A EP4128324A1 (fr) | 2020-04-01 | 2021-03-16 | Structure demontable utilisee pour le transfert ou la manipulation de couches, et procede de transfert d'une couche mettant en ?uvre ladite structure demontable |
CN202180025499.XA CN115398597A (zh) | 2020-04-01 | 2021-03-16 | 用于转移或操纵层的可移除结构以及使用所述可移除结构来转移层的方法 |
TW110110066A TW202147488A (zh) | 2020-04-01 | 2021-03-19 | 用於轉移或處理層的可拆卸結構,以及利用該可拆卸結構轉移層的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003263 | 2020-04-01 | ||
FR2003263A FR3109016B1 (fr) | 2020-04-01 | 2020-04-01 | Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3109016A1 FR3109016A1 (fr) | 2021-10-08 |
FR3109016B1 true FR3109016B1 (fr) | 2023-12-01 |
Family
ID=71575455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2003263A Active FR3109016B1 (fr) | 2020-04-01 | 2020-04-01 | Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable |
Country Status (7)
Country | Link |
---|---|
US (1) | US20230154755A1 (fr) |
EP (1) | EP4128324A1 (fr) |
KR (1) | KR20220161343A (fr) |
CN (1) | CN115398597A (fr) |
FR (1) | FR3109016B1 (fr) |
TW (1) | TW202147488A (fr) |
WO (1) | WO2021198576A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023117997A1 (fr) * | 2021-12-24 | 2023-06-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication de substrats demontables |
FR3131435A1 (fr) * | 2021-12-24 | 2023-06-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication de substrats démontables |
FR3132788B1 (fr) * | 2022-02-14 | 2024-01-05 | Soitec Silicon On Insulator | Procede de transfert d’une couche mince sur un substrat support |
FR3135820B1 (fr) * | 2022-05-18 | 2024-04-26 | Commissariat Energie Atomique | Procédé de transfert d'une couche depuis un substrat source vers un substrat destination |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
FR2819099B1 (fr) * | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | Procede de realisation d'une structure empilee |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
FR2823596B1 (fr) | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
JP4839818B2 (ja) * | 2005-12-16 | 2011-12-21 | 信越半導体株式会社 | 貼り合わせ基板の製造方法 |
FR2995446A1 (fr) | 2012-09-07 | 2014-03-14 | Soitec Silicon On Insulator | Procede de fabrication d'une structure comprenant au moins deux interfaces |
JP5921473B2 (ja) * | 2013-03-21 | 2016-05-24 | 株式会社東芝 | 半導体装置の製造方法 |
FR3082997B1 (fr) | 2018-06-22 | 2020-10-02 | Commissariat Energie Atomique | Procede de transfert de couche(s) de materiau depuis un premier substrat sur un deuxieme substrat |
-
2020
- 2020-04-01 FR FR2003263A patent/FR3109016B1/fr active Active
-
2021
- 2021-03-16 US US17/995,547 patent/US20230154755A1/en active Pending
- 2021-03-16 WO PCT/FR2021/050435 patent/WO2021198576A1/fr unknown
- 2021-03-16 EP EP21719192.3A patent/EP4128324A1/fr active Pending
- 2021-03-16 KR KR1020227034661A patent/KR20220161343A/ko active Search and Examination
- 2021-03-16 CN CN202180025499.XA patent/CN115398597A/zh active Pending
- 2021-03-19 TW TW110110066A patent/TW202147488A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2021198576A1 (fr) | 2021-10-07 |
TW202147488A (zh) | 2021-12-16 |
KR20220161343A (ko) | 2022-12-06 |
FR3109016A1 (fr) | 2021-10-08 |
CN115398597A (zh) | 2022-11-25 |
US20230154755A1 (en) | 2023-05-18 |
EP4128324A1 (fr) | 2023-02-08 |
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