FR3109016B1 - Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable - Google Patents

Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable Download PDF

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Publication number
FR3109016B1
FR3109016B1 FR2003263A FR2003263A FR3109016B1 FR 3109016 B1 FR3109016 B1 FR 3109016B1 FR 2003263 A FR2003263 A FR 2003263A FR 2003263 A FR2003263 A FR 2003263A FR 3109016 B1 FR3109016 B1 FR 3109016B1
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France
Prior art keywords
assembly
interface
substrate
demountable structure
useful layer
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Active
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FR2003263A
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English (en)
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FR3109016A1 (fr
Inventor
Fraçois-Xavier Darras
Vincent Larrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR2003263A priority Critical patent/FR3109016B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2021/050435 priority patent/WO2021198576A1/fr
Priority to EP21719192.3A priority patent/EP4128324A1/fr
Priority to US17/995,547 priority patent/US20230154755A1/en
Priority to CN202180025499.XA priority patent/CN115398597A/zh
Priority to KR1020227034661A priority patent/KR20220161343A/ko
Priority to TW110110066A priority patent/TW202147488A/zh
Publication of FR3109016A1 publication Critical patent/FR3109016A1/fr
Application granted granted Critical
Publication of FR3109016B1 publication Critical patent/FR3109016B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate

Abstract

L’invention concerne une structure démontable (100) comprenant : - au moins deux interfaces, une interface d’assemblage (30) et une interface de détachement privilégié (1), - un substrat receveur (20), - un substrat donneur (10) comportant une couche utile (3) à transférer disposée sur un substrat initial (2), l’interface de détachement privilégié (1) étant située entre ladite couche utile (3) et le substrat initial (2), et l’interface d’assemblage (30) étant située entre ladite couche utile (3) et le substrat receveur (20). La structure démontable (100) est remarquable en ce que l’interface d’assemblage (30) présente une zone d’interruption d’assemblage (31) comprenant au moins une cavité (31a) présente dans le substrat receveur (20) ou dans la couche utile (3), la zone d’interruption d’assemblage (31) étant localisée dans une région périphérique de la structure démontable (100). Figure 1a
FR2003263A 2020-04-01 2020-04-01 Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable Active FR3109016B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2003263A FR3109016B1 (fr) 2020-04-01 2020-04-01 Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable
EP21719192.3A EP4128324A1 (fr) 2020-04-01 2021-03-16 Structure demontable utilisee pour le transfert ou la manipulation de couches, et procede de transfert d'une couche mettant en ?uvre ladite structure demontable
US17/995,547 US20230154755A1 (en) 2020-04-01 2021-03-16 Removable structure used for the transfer or manipulation of layers, and method for transfer of a layer using said removable structure
CN202180025499.XA CN115398597A (zh) 2020-04-01 2021-03-16 用于转移或操纵层的可移除结构以及使用所述可移除结构来转移层的方法
PCT/FR2021/050435 WO2021198576A1 (fr) 2020-04-01 2021-03-16 Structure demontable utilisee pour le transfert ou la manipulation de couches, et procede de transfert d'une couche mettant en œuvre ladite structure demontable
KR1020227034661A KR20220161343A (ko) 2020-04-01 2021-03-16 층들을 전사하거나 핸들링하는데 사용되는 분리 가능한 구조체 및 상기 분리 가능한 구조체를 사용하여 층을 전사하는 방법
TW110110066A TW202147488A (zh) 2020-04-01 2021-03-19 用於轉移或處理層的可拆卸結構，以及利用該可拆卸結構轉移層的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2003263A FR3109016B1 (fr) 2020-04-01 2020-04-01 Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable
FR2003263 2020-04-01

Publications (2)

Publication Number Publication Date
FR3109016A1 FR3109016A1 (fr) 2021-10-08
FR3109016B1 true FR3109016B1 (fr) 2023-12-01

Family

ID=71575455

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2003263A Active FR3109016B1 (fr) 2020-04-01 2020-04-01 Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable

Country Status (7)

Country Link
US (1) US20230154755A1 (fr)
EP (1) EP4128324A1 (fr)
KR (1) KR20220161343A (fr)
CN (1) CN115398597A (fr)
FR (1) FR3109016B1 (fr)
TW (1) TW202147488A (fr)
WO (1) WO2021198576A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023117997A1 (fr) * 2021-12-24 2023-06-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication de substrats demontables
FR3131435A1 (fr) * 2021-12-24 2023-06-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication de substrats démontables
FR3132788B1 (fr) * 2022-02-14 2024-01-05 Soitec Silicon On Insulator Procede de transfert d’une couche mince sur un substrat support
FR3135820A1 (fr) * 2022-05-18 2023-11-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2819099B1 (fr) * 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4839818B2 (ja) * 2005-12-16 2011-12-21 信越半導体株式会社 貼り合わせ基板の製造方法
FR2995446A1 (fr) 2012-09-07 2014-03-14 Soitec Silicon On Insulator Procede de fabrication d'une structure comprenant au moins deux interfaces
JP5921473B2 (ja) * 2013-03-21 2016-05-24 株式会社東芝 半導体装置の製造方法
FR3082997B1 (fr) 2018-06-22 2020-10-02 Commissariat Energie Atomique Procede de transfert de couche(s) de materiau depuis un premier substrat sur un deuxieme substrat

Also Published As

Publication number Publication date
US20230154755A1 (en) 2023-05-18
CN115398597A (zh) 2022-11-25
FR3109016A1 (fr) 2021-10-08
KR20220161343A (ko) 2022-12-06
EP4128324A1 (fr) 2023-02-08
WO2021198576A1 (fr) 2021-10-07
TW202147488A (zh) 2021-12-16

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