FR3087581B1 - Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique - Google Patents

Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique Download PDF

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Publication number
FR3087581B1
FR3087581B1 FR1859722A FR1859722A FR3087581B1 FR 3087581 B1 FR3087581 B1 FR 3087581B1 FR 1859722 A FR1859722 A FR 1859722A FR 1859722 A FR1859722 A FR 1859722A FR 3087581 B1 FR3087581 B1 FR 3087581B1
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France
Prior art keywords
optoelectronic device
sub
fin
pixels
pixel
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Active
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FR1859722A
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English (en)
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FR3087581A1 (fr
Inventor
Fonseca Pamela Rueda
Tiphaine Dupont
Wei Sin Tan
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Aledia
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Aledia
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Publication date
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Priority to FR1859722A priority Critical patent/FR3087581B1/fr
Priority to EP19789685.5A priority patent/EP3871272A1/fr
Priority to US17/287,002 priority patent/US20210391500A1/en
Priority to PCT/EP2019/078603 priority patent/WO2020083847A1/fr
Publication of FR3087581A1 publication Critical patent/FR3087581A1/fr
Application granted granted Critical
Publication of FR3087581B1 publication Critical patent/FR3087581B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Electromagnetism (AREA)

Abstract

La présente invention concerne un dispositif optoélectronique (15) comprenant un substrat (30) et au moins deux sous-pixels (20), chaque sous-pixel (20) étant adapté pour émettre un premier rayonnement respectif, le substrat (30), chaque sous-pixel (20) comprenant : - au moins une ailette (35) réalisée en un premier matériau semi-conducteur, l'ailette (35) le long d'une direction normale perpendiculaire au substrat, chaque ailette (35) ayant un premier côté latéral (75), - une couche de couverture (40) comprenant une ou plusieurs couches émettrices de rayonnement (100), la couche de couverture (40) s'étendant sur le premier côté latéral (75) de chaque ailette (35), les sous-pixels (20) délimitant un évidement situé entre les deux sous-pixels (20), et une structure de blocage (25) étant intercalée entre les deux sous-pixels (20) dans l'évidement, la structure de blocage (25) étant adaptée pour empêcher le premier rayonnement émis par un sous-pixel (20) d'atteindre l'autre sous-pixel (20) à travers la structure de blocage.
FR1859722A 2018-10-22 2018-10-22 Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique Active FR3087581B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1859722A FR3087581B1 (fr) 2018-10-22 2018-10-22 Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique
EP19789685.5A EP3871272A1 (fr) 2018-10-22 2019-10-21 Dispositif optoélectronique, écran d'affichage associé et procédé de fabrication d'un tel dispositif optoélectronique
US17/287,002 US20210391500A1 (en) 2018-10-22 2019-10-21 Optoelectronic device, associated display screen and method for fabricating such an optoelectronic device
PCT/EP2019/078603 WO2020083847A1 (fr) 2018-10-22 2019-10-21 Dispositif optoélectronique, écran d'affichage associé et procédé de fabrication d'un tel dispositif optoélectronique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1859722A FR3087581B1 (fr) 2018-10-22 2018-10-22 Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique

Publications (2)

Publication Number Publication Date
FR3087581A1 FR3087581A1 (fr) 2020-04-24
FR3087581B1 true FR3087581B1 (fr) 2021-01-15

Family

ID=65685593

Family Applications (1)

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FR1859722A Active FR3087581B1 (fr) 2018-10-22 2018-10-22 Dispositif optoelectronique, ecran d'affichage associe et procede de fabrication d'un tel dispositif optoelectronique

Country Status (4)

Country Link
US (1) US20210391500A1 (fr)
EP (1) EP3871272A1 (fr)
FR (1) FR3087581B1 (fr)
WO (1) WO2020083847A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023030857A1 (fr) * 2021-08-30 2023-03-09 Osram Opto Semiconductors Gmbh Dispositif semi-conducteur optoélectronique et procédé de production
CN116247069B (zh) * 2023-05-09 2023-07-25 合肥新晶集成电路有限公司 半导体结构及其制备方法、背照式图像传感器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes
FR3053530B1 (fr) * 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores

Also Published As

Publication number Publication date
EP3871272A1 (fr) 2021-09-01
FR3087581A1 (fr) 2020-04-24
WO2020083847A1 (fr) 2020-04-30
US20210391500A1 (en) 2021-12-16

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