FR2842650B1 - Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique - Google Patents

Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique

Info

Publication number
FR2842650B1
FR2842650B1 FR0209021A FR0209021A FR2842650B1 FR 2842650 B1 FR2842650 B1 FR 2842650B1 FR 0209021 A FR0209021 A FR 0209021A FR 0209021 A FR0209021 A FR 0209021A FR 2842650 B1 FR2842650 B1 FR 2842650B1
Authority
FR
France
Prior art keywords
electronics
opto
optics
producing substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0209021A
Other languages
English (en)
Other versions
FR2842650A1 (fr
Inventor
Bruno Ghyselen
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0209021A priority Critical patent/FR2842650B1/fr
Priority to US10/616,594 priority patent/US6858107B2/en
Priority to AU2003246718A priority patent/AU2003246718A1/en
Priority to DE60315670T priority patent/DE60315670T2/de
Priority to EP03763891A priority patent/EP1537258B9/fr
Priority to JP2005505073A priority patent/JP4708185B2/ja
Priority to TW092119455A priority patent/TWI273659B/zh
Priority to PCT/EP2003/007854 priority patent/WO2004007816A1/fr
Priority to AT03763891T priority patent/ATE370264T1/de
Publication of FR2842650A1 publication Critical patent/FR2842650A1/fr
Application granted granted Critical
Publication of FR2842650B1 publication Critical patent/FR2842650B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening
FR0209021A 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique Expired - Lifetime FR2842650B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0209021A FR2842650B1 (fr) 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
US10/616,594 US6858107B2 (en) 2002-07-17 2003-07-09 Method of fabricating substrates, in particular for optics, electronics or optoelectronics
DE60315670T DE60315670T2 (de) 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
EP03763891A EP1537258B9 (fr) 2002-07-17 2003-07-16 Procede de fabrication de substrats, en particulier pour l'optique, l'electronique ou l'optoelectronique
AU2003246718A AU2003246718A1 (en) 2002-07-17 2003-07-16 Method of fabricating substrates, in particular for optics, electronics or optoelectronics
JP2005505073A JP4708185B2 (ja) 2002-07-17 2003-07-16 特に光学、電子工学、または光電子工学における基板を製造する方法
TW092119455A TWI273659B (en) 2002-07-17 2003-07-16 Method of fabricating substrates, in particular for optics, electronics or optoelectronics
PCT/EP2003/007854 WO2004007816A1 (fr) 2002-07-17 2003-07-16 Procede de fabrication de substrats, en particulier pour l'optique, l'electronique ou l'optoelectronique
AT03763891T ATE370264T1 (de) 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0209021A FR2842650B1 (fr) 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique

Publications (2)

Publication Number Publication Date
FR2842650A1 FR2842650A1 (fr) 2004-01-23
FR2842650B1 true FR2842650B1 (fr) 2005-09-02

Family

ID=29797486

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0209021A Expired - Lifetime FR2842650B1 (fr) 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique

Country Status (2)

Country Link
US (1) US6858107B2 (fr)
FR (1) FR2842650B1 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
FR2837620B1 (fr) * 2002-03-25 2005-04-29 Commissariat Energie Atomique Procede de transfert d'elements de substrat a substrat
JP4406878B2 (ja) * 2004-09-17 2010-02-03 株式会社Ｓｕｍｃｏ 単結晶インゴットの当て板
US7772088B2 (en) * 2005-02-28 2010-08-10 Silicon Genesis Corporation Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7387948B2 (en) * 2005-08-04 2008-06-17 Grace Semiconductor Manufacturing Corporation Structure and method of forming a semiconductor material wafer
US20070029043A1 (en) * 2005-08-08 2007-02-08 Silicon Genesis Corporation Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process
US7166520B1 (en) * 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
US7427554B2 (en) * 2005-08-12 2008-09-23 Silicon Genesis Corporation Manufacturing strained silicon substrates using a backing material
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052357A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7598153B2 (en) * 2006-03-31 2009-10-06 Silicon Genesis Corporation Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
WO2007118121A2 (fr) 2006-04-05 2007-10-18 Silicon Genesis Corporation Procédé et structure conçus pour fabriquer des cellules photovoltaïques au moyen d'un processus de transfert de couche
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20080188011A1 (en) * 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
WO2013093590A1 (fr) 2011-12-23 2013-06-27 Soitec Procédés de fabrication de structures semi-conductrices au moyen de processus de pulvérisation thermique, et structures semi-conductrices fabriquées au moyen de tels procédés

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901423A (en) * 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5882987A (en) * 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6503321B2 (en) * 1998-02-17 2003-01-07 The Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
US6287941B1 (en) * 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
US6436614B1 (en) * 2000-10-20 2002-08-20 Feng Zhou Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
JP4455804B2 (ja) * 2002-05-08 2010-04-21 株式会社ワイ・ワイ・エル インゴットの切断方法と切断装置及びウェーハ並びに太陽電池の製造方法

Also Published As

Publication number Publication date
US20040050483A1 (en) 2004-03-18
FR2842650A1 (fr) 2004-01-23
US6858107B2 (en) 2005-02-22

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Effective date: 20120423

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