FR2834130B1 - Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches - Google Patents

Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches

Info

Publication number
FR2834130B1
FR2834130B1 FR0116556A FR0116556A FR2834130B1 FR 2834130 B1 FR2834130 B1 FR 2834130B1 FR 0116556 A FR0116556 A FR 0116556A FR 0116556 A FR0116556 A FR 0116556A FR 2834130 B1 FR2834130 B1 FR 2834130B1
Authority
FR
France
Prior art keywords
improving
optical characteristics
optoelectronic components
multilayer
multilayer optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0116556A
Other languages
English (en)
Other versions
FR2834130A1 (fr
Inventor
Hideaki Page
Carlo Sirtori
Rossi Alfredo De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0116556A priority Critical patent/FR2834130B1/fr
Priority to AU2002364846A priority patent/AU2002364846A1/en
Priority to US10/499,197 priority patent/US7981707B2/en
Priority to PCT/FR2002/004396 priority patent/WO2003055021A2/fr
Priority to EP02801141A priority patent/EP1466393A2/fr
Publication of FR2834130A1 publication Critical patent/FR2834130A1/fr
Application granted granted Critical
Publication of FR2834130B1 publication Critical patent/FR2834130B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
FR0116556A 2001-12-20 2001-12-20 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches Expired - Lifetime FR2834130B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0116556A FR2834130B1 (fr) 2001-12-20 2001-12-20 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches
AU2002364846A AU2002364846A1 (en) 2001-12-20 2002-12-17 Method for enhancing optical characteristics of multilayer optoelectronic components
US10/499,197 US7981707B2 (en) 2001-12-20 2002-12-17 Method for enhancing optical characteristics of multilayer optoelectronic components
PCT/FR2002/004396 WO2003055021A2 (fr) 2001-12-20 2002-12-17 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches
EP02801141A EP1466393A2 (fr) 2001-12-20 2002-12-17 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0116556A FR2834130B1 (fr) 2001-12-20 2001-12-20 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches

Publications (2)

Publication Number Publication Date
FR2834130A1 FR2834130A1 (fr) 2003-06-27
FR2834130B1 true FR2834130B1 (fr) 2005-02-18

Family

ID=8870753

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0116556A Expired - Lifetime FR2834130B1 (fr) 2001-12-20 2001-12-20 Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches

Country Status (5)

Country Link
US (1) US7981707B2 (fr)
EP (1) EP1466393A2 (fr)
AU (1) AU2002364846A1 (fr)
FR (1) FR2834130B1 (fr)
WO (1) WO2003055021A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
EP1630881B1 (fr) * 2004-08-31 2011-11-16 STMicroelectronics Srl Structure pour recevoir des éléments nanométriques et sa méthode de fabrication
EP1630882B1 (fr) * 2004-08-31 2012-05-02 STMicroelectronics S.r.l. Structure nanométrique et sa méthode de fabrication
EP1630127B1 (fr) * 2004-08-31 2008-09-10 STMicroelectronics S.r.l. Procédé de fabrication d'une structure pour héberger des élements d'une taille de quelques nanomètres
FR2893184B1 (fr) 2005-11-10 2007-12-28 Thales Sa Structure optique de localisation d'un champ electro-magnetique et dispositif detecteurs ou emetteurs comprenant une telle structure
FR2933786B1 (fr) * 2008-07-11 2010-08-20 Thales Sa Dispositif optique comportant un cristal photonique a base de gainp sans absorption a deux photons
FR2933781A1 (fr) * 2008-07-11 2010-01-15 Thales Sa Extracteur de photons a cristaux photoniques pour micro-sources optiques a fort rendement
WO2010151603A1 (fr) * 2009-06-23 2010-12-29 L&P Property Management Company Système de détection de conducteur somnolent
US8643942B2 (en) * 2010-10-29 2014-02-04 Raytheon Company Compensation of thermally induced refractive index distortions in an optical gain medium or other optical element
WO2014018776A1 (fr) 2012-07-26 2014-01-30 Massachusetts Institute Of Technology Circuits intégrés photoniques fondés sur des structures à cascade quantique
WO2015038164A1 (fr) * 2013-09-16 2015-03-19 Intel Corporation Appareils optiques hybrides comprenant des guides d'ondes optiques
US9564550B2 (en) * 2013-10-28 2017-02-07 Infineon Technologies Dresden Gmbh Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier

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US3918996A (en) * 1970-11-02 1975-11-11 Texas Instruments Inc Formation of integrated circuits using proton enhanced diffusion
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
US4116717A (en) * 1976-12-08 1978-09-26 The United States Of America As Represented By The Secretary Of The Air Force Ion implanted eutectic gallium arsenide solar cell
US4452646A (en) * 1981-09-28 1984-06-05 Mcdonnell Douglas Corporation Method of making planar III-V compound device by ion implantation
US4840816A (en) * 1987-03-24 1989-06-20 The United States Of America As Represented By The United States Department Of Energy Method of fabricating optical waveguides by ion implantation doping
US5337328A (en) * 1992-05-08 1994-08-09 Sdl, Inc. Semiconductor laser with broad-area intra-cavity angled grating
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
US5502787A (en) * 1995-05-22 1996-03-26 At&T Corp. Article comprising a semiconductor waveguide structure
US5703989A (en) * 1995-12-29 1997-12-30 Lucent Technologies Inc. Single-mode waveguide structure for optoelectronic integrated circuits and method of making same
JP2874668B2 (ja) * 1996-10-30 1999-03-24 日本電気株式会社 固体撮像装置の製造方法
US5936989A (en) * 1997-04-29 1999-08-10 Lucent Technologies, Inc. Quantum cascade laser
US5963571A (en) * 1997-06-30 1999-10-05 Nec Research Institute, Inc. Quantum-dot cascade laser
US6072812A (en) * 1997-08-01 2000-06-06 Lucent Technologies Inc. Distributed feedback laser with loss coupling
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US5963799A (en) * 1998-03-23 1999-10-05 Texas Instruments - Acer Incorporated Blanket well counter doping process for high speed/low power MOSFETs
FR2784514B1 (fr) * 1998-10-13 2001-04-27 Thomson Csf Procede de controle d'un laser semiconducteur unipolaire
US6597721B1 (en) * 2000-09-21 2003-07-22 Ut-Battelle, Llc Micro-laser
EP1481454B1 (fr) * 2002-03-04 2010-06-30 Danmarks Tekniske Universitet Systeme de diode laser de grande puissance
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping

Also Published As

Publication number Publication date
US7981707B2 (en) 2011-07-19
EP1466393A2 (fr) 2004-10-13
US20050249473A1 (en) 2005-11-10
AU2002364846A8 (en) 2003-07-09
WO2003055021A2 (fr) 2003-07-03
FR2834130A1 (fr) 2003-06-27
AU2002364846A1 (en) 2003-07-09
WO2003055021A3 (fr) 2004-02-12

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