FR2855653B1 - Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe - Google Patents

Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Info

Publication number
FR2855653B1
FR2855653B1 FR0306431A FR0306431A FR2855653B1 FR 2855653 B1 FR2855653 B1 FR 2855653B1 FR 0306431 A FR0306431 A FR 0306431A FR 0306431 A FR0306431 A FR 0306431A FR 2855653 B1 FR2855653 B1 FR 2855653B1
Authority
FR
France
Prior art keywords
electromagnetic wave
optical coupling
wave sensor
amorphous structure
associated detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0306431A
Other languages
English (en)
Other versions
FR2855653A1 (fr
Inventor
Philippe Bois
De L Isle Nadia Briere
Eric Costard
Rossi Alfredo De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0306431A priority Critical patent/FR2855653B1/fr
Priority to EP04766022A priority patent/EP1627421A2/fr
Priority to PCT/EP2004/050929 priority patent/WO2004107392A2/fr
Priority to US10/558,247 priority patent/US7687760B2/en
Publication of FR2855653A1 publication Critical patent/FR2855653A1/fr
Application granted granted Critical
Publication of FR2855653B1 publication Critical patent/FR2855653B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
FR0306431A 2003-05-27 2003-05-27 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe Expired - Fee Related FR2855653B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0306431A FR2855653B1 (fr) 2003-05-27 2003-05-27 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
EP04766022A EP1627421A2 (fr) 2003-05-27 2004-05-26 Structure amorphe de couplage optique pour detecteur d ondes electromagnetiques et detecteur associe
PCT/EP2004/050929 WO2004107392A2 (fr) 2003-05-27 2004-05-26 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
US10/558,247 US7687760B2 (en) 2003-05-27 2004-05-26 Amorphous optical coupling structure for an electromagnetic wave detector and associated detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0306431A FR2855653B1 (fr) 2003-05-27 2003-05-27 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Publications (2)

Publication Number Publication Date
FR2855653A1 FR2855653A1 (fr) 2004-12-03
FR2855653B1 true FR2855653B1 (fr) 2005-10-21

Family

ID=33427481

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0306431A Expired - Fee Related FR2855653B1 (fr) 2003-05-27 2003-05-27 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Country Status (4)

Country Link
US (1) US7687760B2 (fr)
EP (1) EP1627421A2 (fr)
FR (1) FR2855653B1 (fr)
WO (1) WO2004107392A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2855654B1 (fr) * 2003-05-27 2006-03-03 Thales Sa Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
FR2893184B1 (fr) 2005-11-10 2007-12-28 Thales Sa Structure optique de localisation d'un champ electro-magnetique et dispositif detecteurs ou emetteurs comprenant une telle structure
FR2933781A1 (fr) * 2008-07-11 2010-01-15 Thales Sa Extracteur de photons a cristaux photoniques pour micro-sources optiques a fort rendement
FR2933786B1 (fr) * 2008-07-11 2010-08-20 Thales Sa Dispositif optique comportant un cristal photonique a base de gainp sans absorption a deux photons
FR2937792B1 (fr) * 2008-10-24 2011-03-18 Thales Sa Dispositif d'imagerie multispectral a base de multi-puits quantiques
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
JP5621394B2 (ja) * 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置

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FR2507821A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor a effet de champ vertical a jonction et procede de fabrication
FR2548453B1 (fr) * 1983-06-30 1986-11-14 Thomson Csf Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence
FR2640044B1 (fr) * 1988-12-06 1993-02-12 Thomson Csf Dispositif de detection de rayonnements optiques
FR2653229B1 (fr) * 1989-10-12 1992-01-17 Thomson Csf Detecteur capacitif d'onde electromagnetique.
FR2655434B1 (fr) * 1989-12-05 1992-02-28 Thomson Csf Dispositif optique a puits quantiques et procede de realisation.
FR2655774A1 (fr) * 1989-12-08 1991-06-14 Thomson Csf Perfectionnement aux transistors de puissance en materiaux iii-v sur substrat silicium et procede de fabrication.
FR2670006B1 (fr) * 1990-11-29 1993-03-12 Thomson Csf Bolometre electronique a puits quantique et application a un detecteur de rayonnements.
SE468188B (sv) * 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
FR2693594B1 (fr) * 1992-07-07 1994-08-26 Thomson Csf Détecteur d'ondes électromagnétiques à puits quantiques.
FR2729789B1 (fr) * 1993-09-10 1998-03-20 Thomson Csf Detecteur a puits quantique et procede de realisation
FR2718571B1 (fr) * 1994-04-08 1996-05-15 Thomson Csf Composant hybride semiconducteur.
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
FR2726691B1 (fr) * 1994-11-08 1997-01-24 Thomson Csf Photodetecteur de grande dimension et procede de realisation d'un tel photodetecteur
FR2726903B1 (fr) * 1994-11-10 1996-12-06 Thomson Csf Ecartometre integre
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
FR2756666B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
US5773831A (en) * 1997-03-19 1998-06-30 Lockheed Martin Vought Systems Corporation Patch coupled infrared photodetector
JP3955367B2 (ja) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
FR2780203B1 (fr) * 1998-06-23 2003-07-04 Thomson Csf Detecteur a puits quantique avec couche de stockage des electrons photoexcites
FR2783356B1 (fr) * 1998-09-14 2005-02-25 Fujitsu Ltd Photodetecteur infrarouge et procede pour sa fabrication
US6180990B1 (en) * 1999-03-26 2001-01-30 Lockheed Martin Corporation Hyperspectral radiation detector
JP2000299488A (ja) * 1999-04-13 2000-10-24 Fujitsu Ltd 赤外線センサの製造方法
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
FR2808926B1 (fr) * 2000-05-12 2003-08-01 Thomson Csf Detecteur optique polarimetrique
FR2808925B1 (fr) * 2000-05-12 2003-08-08 Thomson Csf Detecteur optique bi-spectral
FR2811808B1 (fr) * 2000-07-11 2002-10-25 Thomson Csf Dispositif d'auto-compensation pour detecteurs soustractifs
US6828642B2 (en) * 2001-04-17 2004-12-07 Lockhead Martin Corporation Diffraction grating coupled infrared photodetector
FR2834130B1 (fr) * 2001-12-20 2005-02-18 Thales Sa Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager

Also Published As

Publication number Publication date
US20060243892A1 (en) 2006-11-02
WO2004107392A2 (fr) 2004-12-09
FR2855653A1 (fr) 2004-12-03
US7687760B2 (en) 2010-03-30
EP1627421A2 (fr) 2006-02-22
WO2004107392A3 (fr) 2005-01-13

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Effective date: 20130927

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