FR2729789B1 - Detecteur a puits quantique et procede de realisation - Google Patents

Detecteur a puits quantique et procede de realisation

Info

Publication number
FR2729789B1
FR2729789B1 FR9310782A FR9310782A FR2729789B1 FR 2729789 B1 FR2729789 B1 FR 2729789B1 FR 9310782 A FR9310782 A FR 9310782A FR 9310782 A FR9310782 A FR 9310782A FR 2729789 B1 FR2729789 B1 FR 2729789B1
Authority
FR
France
Prior art keywords
producing
same
quantum well
well detector
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9310782A
Other languages
English (en)
Other versions
FR2729789A1 (fr
Inventor
Jean Yves Duboz
Francois Luc
Philippe Bois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9310782A priority Critical patent/FR2729789B1/fr
Priority to DE4432031A priority patent/DE4432031B4/de
Priority to US08/309,342 priority patent/US5677544A/en
Priority to GB9418155A priority patent/GB2299890B/en
Publication of FR2729789A1 publication Critical patent/FR2729789A1/fr
Application granted granted Critical
Publication of FR2729789B1 publication Critical patent/FR2729789B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR9310782A 1993-09-10 1993-09-10 Detecteur a puits quantique et procede de realisation Expired - Lifetime FR2729789B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9310782A FR2729789B1 (fr) 1993-09-10 1993-09-10 Detecteur a puits quantique et procede de realisation
DE4432031A DE4432031B4 (de) 1993-09-10 1994-09-08 Detektor mit Quantensenke und Verfahren zu seiner Herstellung
US08/309,342 US5677544A (en) 1993-09-10 1994-09-09 Quantum well detector and process for the manufacture thereof
GB9418155A GB2299890B (en) 1993-09-10 1994-09-09 A quantum well detector and its method of production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9310782A FR2729789B1 (fr) 1993-09-10 1993-09-10 Detecteur a puits quantique et procede de realisation

Publications (2)

Publication Number Publication Date
FR2729789A1 FR2729789A1 (fr) 1996-07-26
FR2729789B1 true FR2729789B1 (fr) 1998-03-20

Family

ID=9450734

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9310782A Expired - Lifetime FR2729789B1 (fr) 1993-09-10 1993-09-10 Detecteur a puits quantique et procede de realisation

Country Status (4)

Country Link
US (1) US5677544A (fr)
DE (1) DE4432031B4 (fr)
FR (1) FR2729789B1 (fr)
GB (1) GB2299890B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2756666B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
FR2757564B1 (fr) * 1996-12-20 1999-03-26 Peugeot Dispositif de commande d'une soupape de moteur de vehicule automobile
FR2757684B1 (fr) * 1996-12-20 1999-03-26 Thomson Csf Detecteur infrarouge a structure quantique, non refroidie
DE19814125C1 (de) * 1998-03-30 1999-10-28 Martin Streibl Steuerbarer optischer Detektor
FR2780203B1 (fr) 1998-06-23 2003-07-04 Thomson Csf Detecteur a puits quantique avec couche de stockage des electrons photoexcites
US6157042A (en) * 1998-11-03 2000-12-05 Lockheed Martin Corporation Optical cavity enhancement infrared photodetector
FR2808926B1 (fr) * 2000-05-12 2003-08-01 Thomson Csf Detecteur optique polarimetrique
FR2808925B1 (fr) 2000-05-12 2003-08-08 Thomson Csf Detecteur optique bi-spectral
FR2811808B1 (fr) 2000-07-11 2002-10-25 Thomson Csf Dispositif d'auto-compensation pour detecteurs soustractifs
FR2855654B1 (fr) * 2003-05-27 2006-03-03 Thales Sa Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
FR2937792B1 (fr) * 2008-10-24 2011-03-18 Thales Sa Dispositif d'imagerie multispectral a base de multi-puits quantiques
CN103887372B (zh) * 2014-04-03 2016-01-20 中国科学院上海微系统与信息技术研究所 一种太赫兹量子阱光电探测器的设计方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994664A (en) * 1989-03-27 1991-02-19 Massachusetts Institute Of Technology Optically coupled focal plane arrays using lenslets and multiplexers
WO1991002380A1 (fr) * 1989-08-11 1991-02-21 Santa Barbara Research Center Procede de fabrication d'une microlentille optique binaire sur un reseau de detecteurs
US5026148A (en) * 1989-12-26 1991-06-25 Hughes Aircraft Company High efficiency multiple quantum well structure and operating method
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
WO1992008250A1 (fr) * 1990-10-31 1992-05-14 Martin Marietta Corporation Detecteur a infrarouge a puits quantiques et a transport de minibande
SE468188B (sv) * 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
US5272356A (en) * 1991-11-12 1993-12-21 Hughes Aircraft Company Multiple quantum well photodetector for normal incident radiation

Also Published As

Publication number Publication date
DE4432031B4 (de) 2007-01-04
DE4432031A1 (de) 1996-08-29
GB2299890B (en) 1997-08-20
GB2299890A (en) 1996-10-16
GB9418155D0 (en) 1996-07-17
US5677544A (en) 1997-10-14
FR2729789A1 (fr) 1996-07-26

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Legal Events

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