US7687760B2 - Amorphous optical coupling structure for an electromagnetic wave detector and associated detector - Google Patents

Amorphous optical coupling structure for an electromagnetic wave detector and associated detector Download PDF

Info

Publication number
US7687760B2
US7687760B2 US10/558,247 US55824705A US7687760B2 US 7687760 B2 US7687760 B2 US 7687760B2 US 55824705 A US55824705 A US 55824705A US 7687760 B2 US7687760 B2 US 7687760B2
Authority
US
United States
Prior art keywords
features
optical coupling
detector
wavelength
electromagnetic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US10/558,247
Other languages
English (en)
Other versions
US20060243892A1 (en
Inventor
Philippe Bois
Nadia Briere De L'Isle
Eric Costard
Alfredo De Rossi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Assigned to THALES reassignment THALES ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BOIS, PHILIPPE, BRIERE DE L'ISLE, NADIA, COSTARD, ERIC, DE ROSSI, ALFREDO
Publication of US20060243892A1 publication Critical patent/US20060243892A1/en
Application granted granted Critical
Publication of US7687760B2 publication Critical patent/US7687760B2/en
Assigned to SOFRADIR reassignment SOFRADIR ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: THALES
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Definitions

  • the field of the invention is that of electromagnetic wave detectors made of semiconductor material and especially one having a multiple quantum well structure, particularly one suitable for the infrared range.
  • This type of structure has the advantage of providing very good sensitivity because of the discretization of the energy levels within the conduction bands of the photoconductor materials used.
  • the electric field of the incident electromagnetic wave it is necessary for the electric field of the incident electromagnetic wave to have a component along the direction of growth of the layers, i.e. along the direction D indicated in FIG. 1 , this direction being perpendicular to the plane of the layers.
  • gratings The major drawback of the use of gratings is the wavelength and angular resonance associated with the increase in absorption, thereby limiting the use of these devices to a very narrow absorption window. These resonances are directly related to the periodic nature of the gratings. Thus, if it is desired to have a detector capable of detecting a range of wavelengths having a broader spectral band, solutions other than grating structures have to be sought.
  • the present invention proposes a novel amorphous optical coupling structure designed to couple electromagnetic radiation on the surface of a photodetector, in order to eliminate the periodic effects while still ensuring effective optical coupling.
  • the subject of the present invention is an optical coupling structure intended to couple electromagnetic radiation to the surface of a photodetector, characterized in that it comprises a coupling surface paved along mutually perpendicular first and second directions by a set of N series of first features, second features, . . . nth features, the features being identical within any one series, the features being distributed along the first and second directions, the centers between two adjacent features or the inter-reticular distance between two adjacent features being variable and the first, second, . . . nth features being of square shape and/or of rectangular shape.
  • the density of features on the coupling surface is approximately constant over the entire said surface.
  • the optical coupling surface consists of a set of N series of first, second, . . . nth identical elementary cells within the same series constituting the paving, each first, second, . . . nth elementary cell comprising a feature homothetic with said elementary cell.
  • the average of the distances between the centers of adjacent features or the average of the inter-reticular distances between two adjacent features along the first direction and the average along the second direction are substantially equal to the wavelength of the electromagnetic radiation in the detector medium.
  • the inter-reticular space between the features is constant.
  • each feature is centered within an elementary cell, the inter-reticular distance between features not being constant and the fill factor of the elementary cells by the features being constant.
  • the coupling surface may comprise first, second, third and fourth features having dimensions of axa, bxb, axb and bxa, respectively.
  • the features may be equally well etched level with the coupling surface as produced on the surface of the coupling surface by conventional photolithography processes and they typically have an etch depth of around ⁇ /4.
  • the paving may be obtained by depositing a highly conductive layer of the gold or silver type.
  • the subject of the invention is also an electromagnetic wave detector comprising a multiple quantum well structure operating on interband or intersubband transitions by absorption of radiation around a wavelength ⁇ , and comprising optical coupling means for coupling said radiation, characterized in that the optical coupling means comprise an optical coupling structure as claimed in the invention.
  • the object of the invention is to reinforce the electromagnetic field in the form of optical modes within the active layer and therefore the invention can be applied to intersubband or interband transitions.
  • the detector may comprise a multilayer stack produced on the surface of a substrate, said stack comprising the multiple quantum well structure and external layers, the first and second features being etched within one external layer.
  • the subject of the invention is also a matrix electromagnetic wave detector, characterized in that it comprises a matrix of individual detector elements as claimed in the invention, each individual detector element having a multilayer stack, said stack comprising the multiple quantum well structure and external layers, the first and second features being etched within one external layer, said elements being produced on the surface of a common substrate.
  • the stack of active layers is a stack of semiconductor layers of the doped GaAs or GaAlAs type, the substrate being of the doped or undoped GaAs type.
  • the detector may comprise a substrate that is transparent at the wavelength of the radiation and a layer that is reflective at said wavelength, said reflective layer being on the surface of the features, so as to make the detector operate in reflection.
  • the subject of the invention is a laser source comprising a multiple quantum well structure operating on interband or intersubband transitions at a wavelength ⁇ and comprising an optical coupling structure according to the invention.
  • FIG. 1 shows schematically a multiple quantum well structure according to the known art
  • FIG. 2 illustrates a laser source and multiple quantum well detector possessing optical coupling means of the matrix diffraction grating type, according to the prior art
  • FIG. 3 illustrates a first embodiment of an optical coupling structure according to the invention
  • FIG. 4 illustrates a second embodiment of an optical coupling structure according to the invention
  • FIG. 5 illustrates a third embodiment of an optical coupling structure according to the invention
  • FIG. 6 illustrates an example of a multiple quantum well detector according to the invention, seen in cross section
  • FIG. 7 illustrates an example of a matrix detector according to the invention.
  • FIG. 8 illustrates an exploded view of a matrix detector according to the invention.
  • the coupling structure according to the invention comprises a set of paved features on a coupling surface, these features being distributed in two orthogonal directions Dx and Dy, the density of features over the entire surface being substantially constant.
  • the coupling surface is made up of four series of elementary features, two series of square features having dimensions of c ⁇ c, d ⁇ d and two series of rectangular features having dimensions of c ⁇ d and d ⁇ c, as illustrated in FIG. 3 .
  • the distance between features is constant and equal to e.
  • the length c+e is matched to a first wavelength ⁇ 1 and the length d+e is matched to a second wavelength ⁇ 2 so as to obtain an effective coupling structure over a certain spectral band, that is to say c+e ⁇ 1 /n and d+e ⁇ 2 /n, where n is the optical index of the detector medium.
  • the optical coupling surface is defined in terms of elementary surfaces, again called elementary cells having dimensions of a ⁇ a, a ⁇ b, b ⁇ a and b ⁇ b, as illustrated in FIG. 4 .
  • elementary cells having dimensions of a ⁇ a, a ⁇ b, b ⁇ a and b ⁇ b, as illustrated in FIG. 4 .
  • four series of features (M1i, M2i, M3i and M4i) homothetic with said elementary cells are employed.
  • the features have dimensions of c ⁇ c, c M ⁇ d M , d m ⁇ c M and d ⁇ d, respectively.
  • the dimensions c M and d M are determined so as to maintain the same fill factor as for the a ⁇ a and b ⁇ b cells.
  • the length a is matched to a first wavelength ⁇ 1 and the length b is matched to a second wavelength ⁇ 2 so as to obtain an effective coupling structure over a certain spectral band.
  • the feature is placed at the center of the cell, the spacing between each feature (e c +e M , e M +e d , e d +e d , etc.) being variable within the structure.
  • the optical coupling surface is defined in terms of elementary surfaces again called elementary cells having dimensions of a ⁇ a, a ⁇ b, b ⁇ a and b ⁇ b, as illustrated in FIG. 5 .
  • the features have dimensions of c ⁇ c, c ⁇ d, d ⁇ c and d ⁇ d, respectively.
  • the length c is matched to a first wavelength ⁇ 1 and the length d is matched to a second wavelength ⁇ 2 so as to obtain an effective coupling structure over a certain spectral band.
  • the fill factor is not the same between the square cells and the rectangular cells.
  • the optical structure according to the invention may comprise etched features (the preferred embodiment as technologically this is the easiest to produce).
  • the detector may be conventionally produced on the surface of a substrate S made of a possibly undoped semiconductor material.
  • An assembly of layers constituting an ohmic contact, called the lower contact C 1 made of highly doped semiconductor material is deposited on the surface of the substrate.
  • This ohmic contact supports the set of semiconductor layers constituting the multiple quantum well structure MQW, this structure being in contact with an assembly of layers constituting an ohmic contact called the upper contact C u , the detection taking place between the two ohmic contact layers.
  • the features may be etched in the ohmic contact layer C u as illustrated in FIG. 6 , which shows a cross-sectional view.
  • optical coupling configurations for an elementary detector that may advantageously be applied within the context of a matrix detector comprising individual elements, each of these individual elements having, on the surface, optical coupling means comprising diffraction features along the directions Dx and Dy.
  • FIGS. 7 and 8 illustrate an example of a matrix detector according to the invention in which the set of features is produced on the surface of a common substrate with an ohmic contact layer that is also common.
  • the lower ohmic contact layer made of Si-doped GaAs with a doping content of 5 ⁇ 10 18 cm ⁇ 3 and a thickness of typically 2 microns is deposited on an intrinsically undoped GaAs substrate.
  • the multiple quantum well structure is produced by the stacking of 50 periods composed of an Si-doped GaAs layer with a charge carrier concentration of 5 ⁇ 10 18 cm ⁇ 3 with a thickness of 5 nm, this being inserted between two barrier layers consisting of Ga 0.75 Al 0.25 As with a thickness of 50 nm.
  • the upper contact layer is identical to the lower contact layer and also has a thickness of 2 microns.
  • the features of the amorphous coupling feature are produced within this upper contact layer.
  • the etch depths are 1.2 microns and the spacings a and b of the features are 2.4 microns and 2.7 microns (the mean optical index of the structure being from 3.3 to 9 microns).
  • the fill factor of the surface of the upper contact layer is typically around 50%.
US10/558,247 2003-05-27 2004-05-26 Amorphous optical coupling structure for an electromagnetic wave detector and associated detector Expired - Fee Related US7687760B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0306431 2003-05-27
FR0306431A FR2855653B1 (fr) 2003-05-27 2003-05-27 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
PCT/EP2004/050929 WO2004107392A2 (fr) 2003-05-27 2004-05-26 Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Publications (2)

Publication Number Publication Date
US20060243892A1 US20060243892A1 (en) 2006-11-02
US7687760B2 true US7687760B2 (en) 2010-03-30

Family

ID=33427481

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/558,247 Expired - Fee Related US7687760B2 (en) 2003-05-27 2004-05-26 Amorphous optical coupling structure for an electromagnetic wave detector and associated detector

Country Status (4)

Country Link
US (1) US7687760B2 (fr)
EP (1) EP1627421A2 (fr)
FR (1) FR2855653B1 (fr)
WO (1) WO2004107392A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2855654B1 (fr) * 2003-05-27 2006-03-03 Thales Sa Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
FR2893184B1 (fr) 2005-11-10 2007-12-28 Thales Sa Structure optique de localisation d'un champ electro-magnetique et dispositif detecteurs ou emetteurs comprenant une telle structure
FR2933781A1 (fr) * 2008-07-11 2010-01-15 Thales Sa Extracteur de photons a cristaux photoniques pour micro-sources optiques a fort rendement
FR2933786B1 (fr) * 2008-07-11 2010-08-20 Thales Sa Dispositif optique comportant un cristal photonique a base de gainp sans absorption a deux photons
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
FR2937792B1 (fr) * 2008-10-24 2011-03-18 Thales Sa Dispositif d'imagerie multispectral a base de multi-puits quantiques
JP5621394B2 (ja) * 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置

Citations (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505022A (en) 1981-06-16 1985-03-19 Thomson-Csf Junction vertical field effect transistor and process for the production thereof
US4586239A (en) 1983-06-30 1986-05-06 Thomson-Csf Process of manufacturing a high-frequency vertical junction field-effect transistor
US5086327A (en) 1989-10-12 1992-02-04 Thomson-Csf Capacitive detector of electromagnetic waves
US5138407A (en) 1989-12-08 1992-08-11 Thomson - Csf Transistor made of 3-5 group semiconductor materials on a silicon substrate
EP0508970A1 (fr) 1991-04-08 1992-10-14 Im Institutet För Mikroelektronik Détecteur pour le rayonnement infrarouge
US5187715A (en) 1989-12-05 1993-02-16 Thomson-Csf Quantum well optical device
US5228777A (en) 1990-11-29 1993-07-20 Thomson-Csf Quantum-well electronic bolometer and application to a radiation detector
US5326984A (en) 1991-07-05 1994-07-05 Thomson-Csf Electromagnetic wave detector
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
US5506418A (en) 1992-07-07 1996-04-09 Thomson-Csf Electromagnetic wave detector with quantum well structure
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US5677544A (en) 1993-09-10 1997-10-14 Thomson-Csf Quantum well detector and process for the manufacture thereof
US5712499A (en) 1994-11-08 1998-01-27 Thomson-Csf Large photodetector array
US5719670A (en) 1994-11-10 1998-02-17 Thomson-Csf Integrated direction finder
US5726500A (en) 1994-04-08 1998-03-10 Thomson-Csf Semiconductor hybrid component
EP0866504A2 (fr) 1997-03-19 1998-09-23 Lockheed Martin Vought Systems Corporation Detecteur infra-rouge à couplage par pastille
US5869844A (en) 1988-12-06 1999-02-09 Thomson-Csf Device for the detection of optical radiations
FR2783356A1 (fr) 1998-09-14 2000-03-17 Fujitsu Ltd Photodetecteur infrarouge et procede pour sa fabrication
US6091126A (en) 1996-12-04 2000-07-18 Thomson-Csf Electromagnetic wave detector
US6157020A (en) 1996-12-04 2000-12-05 Thomson-Csf Bispectral electromagnetic wave detector
US6180990B1 (en) * 1999-03-26 2001-01-30 Lockheed Martin Corporation Hyperspectral radiation detector
US20020008191A1 (en) * 1999-12-24 2002-01-24 Faska Thomas S. Multi-color, multi-focal plane optical detector
US20020148963A1 (en) * 2001-04-17 2002-10-17 Lockheed Martin Corporation Diffraction grating coupled infrared photodetector
US6534758B2 (en) 2000-07-11 2003-03-18 Thales Electromagnetic wave detector using quantum wells and subtractive detectors
US6569704B1 (en) * 1997-09-30 2003-05-27 Lumileds Lighting U.S., Llc Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency
US6627868B2 (en) 2000-05-12 2003-09-30 Thomson-Csf Bi-functional optical detector including four optical detectors used to detect combination of two wavelengths
US20040108564A1 (en) * 2002-12-05 2004-06-10 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US6797938B2 (en) * 2000-05-12 2004-09-28 Thales Polarimetric optical device with an insulating layer between detectors
US6809350B1 (en) 1998-06-23 2004-10-26 Thomson-Csf Quantum well detector with layer for the storage of photo-excited electrons
US20050249473A1 (en) 2001-12-20 2005-11-10 Hideaki Page Method for enhancing optical characteristics of multilayer optoelectronic components

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299488A (ja) * 1999-04-13 2000-10-24 Fujitsu Ltd 赤外線センサの製造方法

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505022A (en) 1981-06-16 1985-03-19 Thomson-Csf Junction vertical field effect transistor and process for the production thereof
US4586239A (en) 1983-06-30 1986-05-06 Thomson-Csf Process of manufacturing a high-frequency vertical junction field-effect transistor
US5869844A (en) 1988-12-06 1999-02-09 Thomson-Csf Device for the detection of optical radiations
US5086327A (en) 1989-10-12 1992-02-04 Thomson-Csf Capacitive detector of electromagnetic waves
US5187715A (en) 1989-12-05 1993-02-16 Thomson-Csf Quantum well optical device
US5138407A (en) 1989-12-08 1992-08-11 Thomson - Csf Transistor made of 3-5 group semiconductor materials on a silicon substrate
US5228777A (en) 1990-11-29 1993-07-20 Thomson-Csf Quantum-well electronic bolometer and application to a radiation detector
EP0508970A1 (fr) 1991-04-08 1992-10-14 Im Institutet För Mikroelektronik Détecteur pour le rayonnement infrarouge
US5326984A (en) 1991-07-05 1994-07-05 Thomson-Csf Electromagnetic wave detector
US5506418A (en) 1992-07-07 1996-04-09 Thomson-Csf Electromagnetic wave detector with quantum well structure
US5677544A (en) 1993-09-10 1997-10-14 Thomson-Csf Quantum well detector and process for the manufacture thereof
US5726500A (en) 1994-04-08 1998-03-10 Thomson-Csf Semiconductor hybrid component
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
US5712499A (en) 1994-11-08 1998-01-27 Thomson-Csf Large photodetector array
US5719670A (en) 1994-11-10 1998-02-17 Thomson-Csf Integrated direction finder
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US6157020A (en) 1996-12-04 2000-12-05 Thomson-Csf Bispectral electromagnetic wave detector
US6091126A (en) 1996-12-04 2000-07-18 Thomson-Csf Electromagnetic wave detector
EP0866504A2 (fr) 1997-03-19 1998-09-23 Lockheed Martin Vought Systems Corporation Detecteur infra-rouge à couplage par pastille
US6569704B1 (en) * 1997-09-30 2003-05-27 Lumileds Lighting U.S., Llc Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency
US6809350B1 (en) 1998-06-23 2004-10-26 Thomson-Csf Quantum well detector with layer for the storage of photo-excited electrons
FR2783356A1 (fr) 1998-09-14 2000-03-17 Fujitsu Ltd Photodetecteur infrarouge et procede pour sa fabrication
US6180990B1 (en) * 1999-03-26 2001-01-30 Lockheed Martin Corporation Hyperspectral radiation detector
US20020008191A1 (en) * 1999-12-24 2002-01-24 Faska Thomas S. Multi-color, multi-focal plane optical detector
US6627868B2 (en) 2000-05-12 2003-09-30 Thomson-Csf Bi-functional optical detector including four optical detectors used to detect combination of two wavelengths
US6797938B2 (en) * 2000-05-12 2004-09-28 Thales Polarimetric optical device with an insulating layer between detectors
US6534758B2 (en) 2000-07-11 2003-03-18 Thales Electromagnetic wave detector using quantum wells and subtractive detectors
US20020148963A1 (en) * 2001-04-17 2002-10-17 Lockheed Martin Corporation Diffraction grating coupled infrared photodetector
US20050249473A1 (en) 2001-12-20 2005-11-10 Hideaki Page Method for enhancing optical characteristics of multilayer optoelectronic components
US20040108564A1 (en) * 2002-12-05 2004-06-10 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Andersson J Y et al: "Coupling of Radiation Into Quantum Well Infrared Detectors by the use of Reflection Gratings and Waveguide Structures" Intersubband Transitions in Quantum Wells. Sep. 9-14, 1991. Proceeding of the Advanced Research Workshop on intersubband Transitions in Quantum Wells, New York Sep. 9, 1991, pp. 1-13.
Lee C P et al: "Quantum Well Infrared Photodetectors with Bi-Periodic Grating Couplers" Applied Physics Letters, American Institute of Physics, New York, US vol. 61, No. 20 Nov. 16, 1992 pp. 2437-2439.
Patent Abstract of Japan vol. 2000 No. 13, Feb. 5, 2001 JP 2000 299488A Oct. 24, 2000.
Yeong-Cheng Wang et al "A numerical analysis of the double periodic reflection metal grating for multiquantum well infrared photodectors" Journal of Applied Physics, American Institute of Physics, New York vol. 74, No. 4 Aug. 15, 1993.

Also Published As

Publication number Publication date
WO2004107392A3 (fr) 2005-01-13
US20060243892A1 (en) 2006-11-02
FR2855653A1 (fr) 2004-12-03
FR2855653B1 (fr) 2005-10-21
EP1627421A2 (fr) 2006-02-22
WO2004107392A2 (fr) 2004-12-09

Similar Documents

Publication Publication Date Title
US4903101A (en) Tunable quantum well infrared detector
US6423980B1 (en) Multi-directional radiation coupling in quantum-well infrared photodetectors
US7423254B2 (en) High responsivity high bandwidth metal-semiconductor-metal optoelectronic device
JP2889759B2 (ja) 赤外線検出器および放射線を結合する方法
US7659536B2 (en) High performance hyperspectral detectors using photon controlling cavities
US5392307A (en) Vertical optoelectronic semiconductor device
US5075749A (en) Optical device including a grating
JPH11504763A (ja) 拡張量子井戸赤外線ホトディテクタ
JP6035921B2 (ja) 光検出器およびその製造方法
US6452187B1 (en) Two-color grating coupled infrared photodetector
US7687760B2 (en) Amorphous optical coupling structure for an electromagnetic wave detector and associated detector
US5228777A (en) Quantum-well electronic bolometer and application to a radiation detector
US6521967B1 (en) Three color quantum well infrared photodetector focal plane array
US7622703B2 (en) Photodetector having a near field concentration
US5026148A (en) High efficiency multiple quantum well structure and operating method
JP4935148B2 (ja) 多波長量子井戸型赤外線検知器
US7741594B2 (en) Electromagnetic wave detector with an optical coupling surface comprising lamellar patterns
US5056889A (en) Optical device including a grating
US11282873B2 (en) Photodetector and imaging device
JP4751926B2 (ja) 光半導体装置および光検出システム
JP3776266B2 (ja) 赤外線検知器とその製造方法
US6441373B1 (en) Infrared photodetector and method of manufacturing the same
JP5255042B2 (ja) 光検知素子
JPH06502743A (ja) ミニバンド移送量子ウェル赤外線検知器
EP0448869A1 (fr) Dispositif optique comprenant une structure de grille

Legal Events

Date Code Title Description
AS Assignment

Owner name: THALES, FRANCE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BOIS, PHILIPPE;BRIERE DE L'ISLE, NADIA;COSTARD, ERIC;AND OTHERS;REEL/FRAME:017942/0633

Effective date: 20051107

Owner name: THALES,FRANCE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BOIS, PHILIPPE;BRIERE DE L'ISLE, NADIA;COSTARD, ERIC;AND OTHERS;REEL/FRAME:017942/0633

Effective date: 20051107

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: SOFRADIR, FRANCE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:THALES;REEL/FRAME:033606/0324

Effective date: 20131217

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552)

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20220330