EP0508970A1 - Détecteur pour le rayonnement infrarouge - Google Patents

Détecteur pour le rayonnement infrarouge Download PDF

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Publication number
EP0508970A1
EP0508970A1 EP92850073A EP92850073A EP0508970A1 EP 0508970 A1 EP0508970 A1 EP 0508970A1 EP 92850073 A EP92850073 A EP 92850073A EP 92850073 A EP92850073 A EP 92850073A EP 0508970 A1 EP0508970 A1 EP 0508970A1
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EP
European Patent Office
Prior art keywords
grating
detector
spread
gallium arsenide
incident light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92850073A
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German (de)
English (en)
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EP0508970B1 (fr
Inventor
Jan Andersson
Lennart Lundqvist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institutet fur Mikroelectronik IM
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Institutet fur Mikroelectronik IM
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method of coupling radiation in an infrared detector, and an arrangement herefor.
  • IR-detectors which use quantum wells are comprised of a thin layer of, e.g., gallium arsenide (GaAs) surrounded by aluminium gallium arsenide (AlGaAs).
  • GaAs gallium arsenide
  • AlGaAs aluminium gallium arsenide
  • the most common type of IR-detector comprises 50 such quantum wells, each having a thickness of about 5 nm.
  • the most common detector is photoconductive. It is also possible, however, to manufacture photovoltaic detectors.
  • Quantum well detectors are either manufactured in accordance with the MOVPE-technique (metal organic gasphase epitaxy) or in accordance with MBE-technique (molecular beam epitaxy).
  • quantum well detectors that are based on so-called intersub band transitions in the conductor band are sensitive solely to IR-radiation whose electrical field vector has a component which is perpendicular to the quantum-well plane. This limits the degree of quantum efficiency and renders the majority of detector configurations sensitive to polarization. In particular, the detector is not sensitive, or responsive, to radiation which is incident perpendicular to the quantum-well layer.
  • the present invention solves this problem and provides a technique where the detector has a high degree of quantum efficiency, irrespective of the angle of the incident radiation, and where the detector is not sensitive to the polarization direction of the radiation.
  • the present invention relates to a method for coupling radiation in an infrared detector of the type which uses quantum wells that are comprised of thin layers of, e.g., gallium arsenide (GaAs) surrounded by aluminium gallium arsenide (AlGaAs), and is characterized in that a two-dimensional reflection grating, a so-called crossed grating, is formed in the top of the mesa of the detector, i.e. the quantum-well structure of the detector, on the side opposite to the surface through which incident light enters the detector, said grating causing the incident light to spread in different directions.
  • GaAs gallium arsenide
  • AlGaAs aluminium gallium arsenide
  • the invention also relates to an arrangement of the kind defined in Claim 5 and having the characteristic features set forth therein.
  • Figure 1 illustrates a detector in which the invention is applied.
  • the detector is an infrared detector which functions to detect infrared radiation.
  • the detector is of the kind which uses quantum wells, said wells comprising thin layers of, e.g., gallium arsenide (GaAs) surrounded by aluminium gallium arsenide (AlGaAs).
  • the reference numeral 1 identifies a multiple of such quantum-well layers.
  • the layer may comprise 50 thin layers of GaAs and AlGaAs which together have a thickness of 1.7 micrometers.
  • a respective contact layer 2 and 3 is provided beneath and above the quantum-well layer.
  • the detector is built-up on a substrate 4 of semi-insulating gallium arsenide (GaAs). Incident light is intended to impinge from beneath in Figure 1, as shown by the arrow 5.
  • a two-dimensional reflection grating 6 a so-called crossed grating or doubly-periodic grating, on the top of the detector mesa 1 of the detector, i.e. on the quantum-well structure of the detector, on the side opposite to that surface 7 through which incident light 5 is intended to enter the detector.
  • the reflection grating is comprised, for instance, of etched gallium arsenide with an overlying metal layer.
  • the grating 6 is intended to spread the incident light in different directions.
  • the grating is constructed so as to spread light in four directions, namely (1,0), (- 0,0) (0,1) and (0, -1). These directions are designated (1 0)-directions in the following. In order to achieve good absorption, it is optimum to lie close to the so-called cutoff of these directions, where the spread angle is close to 90° and the wavelength in vaccum is equal to N x d, where N is the refraction index and d is the grating constant.
  • the spread radiation may either be TE (transverse electric) with the electric field vector lying parallel with the quantum well plane and the grating plane. There is no quantum-well absorption in this case.
  • the field vector may be directed perpendicularly to this direction, i.e. TM (transverse magnetic), in which case quantum-well absorption will take place.
  • TM transverse magnetic
  • reflexes with the order (0 0) can be minimized since this does not give rise to absorption either.
  • Figure 2 shows the grating from beneath and which indicates the direction of incident light with the arrow 5.
  • Incident light or radiation may be non-polarized or polarized.
  • the electric field can be divided into an x-component (Ex), which is indicated by a solid line 8 between two solid circles, and a y-component (Ey) which is indicated with a solid line 9 between two hollow squares.
  • the magnitude and direction of the electric field are given respectively by the length and the direction of the solid lines.
  • the incident radiation whose field vector is parallel with the grating plane, is converted by the influence of the grating so that a large component TM-radiation, where the field vector is perpendicular to the grating plane, is formed and thus give rise to absorption; see the beams 10, 11.
  • the electrical fields originating from the x-direction of the incident radiation are shown as such, i.e. with a solid line between two solids circles, whereas the electric fields originating from the y-direction are shown with a solid line between two hollow squares.
  • the grating couples the incident radiation effectively to the quantum wells through said reflection.
  • the grating renders the detector insensitive to how the incident radiation is polarized.
  • the crossed grating is configured with square or hexagonal symmetry. This renders the detector totally insensitive to the polarization of the incident light.
  • the grating may consist of parallelepipedic bodies, as illustrated in Figure 1, measuring 0.9 x 2.1 x 2.1 micrometers.
  • the grating may alternatively comprise circular bodies in the plane of the grating, or bodies of some other shape.
  • a metal layer is provided above the grating for reflecting the incident light that falls onto the grating back onto the quantum-well layer 1.
  • This layer will be a good conductor, for instance a gold, silver or aluminium layer.
  • This layer may be an aluminium arsenide layer or, alternatively, an aluminium gallium arsenide layer.
  • the layer 14 has a low refraction index, which gives total reflection.
  • Figure 3 illustrates how incident light or radiation 5 is reflected onto the grating 6 and onto the cladding layer 14, causing the light to pass through the quantum wells a number of times, thereby greating increasing the degree of quantum efficiency.
  • the grating and the cladding layer therewith define a waveguide.
  • the cladding layer may have a thickness of 3 micrometers for instance.
  • the mirror consists of the ambient atmosphere, where the refraction index of the atmosphere gives total reflection.
  • the atmosphere can for example be air or any other suitable gas.
  • control layer 2 forms the underside.
  • a thin layer of gallium arsenide (AlGaAs) can be applied on the contact layer 2, which layer of AlGaAs then forms the underside of the structure.
  • a degree of quantum efficiency as high as 80-90% is obtained with the described method and arrangement.
  • the reflection grating 6 together with the cladding layer 14 also greatly reduces the occurrence of so-called cross-talk between adjacent detector elements in an array of such elements.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Radiation Pyrometers (AREA)
EP92850073A 1991-04-08 1992-04-02 Détecteur pour le rayonnement infrarouge Expired - Lifetime EP0508970B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9101034A SE468188B (sv) 1991-04-08 1991-04-08 Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
SE9101034 1991-04-08

Publications (2)

Publication Number Publication Date
EP0508970A1 true EP0508970A1 (fr) 1992-10-14
EP0508970B1 EP0508970B1 (fr) 1996-11-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP92850073A Expired - Lifetime EP0508970B1 (fr) 1991-04-08 1992-04-02 Détecteur pour le rayonnement infrarouge

Country Status (6)

Country Link
US (1) US5229614A (fr)
EP (1) EP0508970B1 (fr)
JP (1) JP2889759B2 (fr)
AT (1) ATE145091T1 (fr)
DE (1) DE69214990T2 (fr)
SE (1) SE468188B (fr)

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US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
FR2729789A1 (fr) * 1993-09-10 1996-07-26 Thomson Csf Detecteur a puits quantique et procede de realisation
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
EP0866504A2 (fr) * 1997-03-19 1998-09-23 Lockheed Martin Vought Systems Corporation Detecteur infra-rouge à couplage par pastille
FR2761813A1 (fr) * 1997-04-08 1998-10-09 Thomson Csf Detecteur d'ondes electromagnetiques multielements a diaphotie reduite
FR2803949A1 (fr) * 1994-03-15 2001-07-20 Loral Vought Systems Corp Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur
WO2002031551A1 (fr) * 2000-10-13 2002-04-18 Highwave Optical Technologies Marseille Filtres optiques, leur procede de fabrication et leur utilisation pour un systeme multiplexe
FR2815417A1 (fr) * 2000-10-13 2002-04-19 Shakticom Filtre optique, son procede de fabrication et son utilisation pour un systeme multiplex
FR2816062A1 (fr) * 2000-10-27 2002-05-03 Shakticom Filtre optique, son procede de fabrication par dopage ionique et son utilisation pour un systeme multiplex
KR100349599B1 (ko) * 2000-04-14 2002-08-23 삼성전자 주식회사 양자 효율이 향상된 양자점 적외선 탐지기
FR2855653A1 (fr) * 2003-05-27 2004-12-03 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
US6909096B1 (en) 1999-03-12 2005-06-21 Saabtech Electronics Ab Quantum well based two-dimensional detector for IR radiation and camera system with such a detector
WO2011149960A3 (fr) * 2010-05-24 2012-04-05 University Of Florida Research Foundation Inc. Procédé et appareil destinés à fournir une couche de blocage de charge sur un dispositif de conversion ascendante à infrarouge
US10134815B2 (en) 2011-06-30 2018-11-20 Nanoholdings, Llc Method and apparatus for detecting infrared radiation with gain
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices

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US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
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US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
US6172379B1 (en) 1998-07-28 2001-01-09 Sagi-Nahor Ltd. Method for optimizing QWIP grating depth
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US9679091B2 (en) * 2009-08-18 2017-06-13 The United States Of America As Represented By The Secretary Of The Army Computer designed resonant photodetectors and method of making
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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2729789A1 (fr) * 1993-09-10 1996-07-26 Thomson Csf Detecteur a puits quantique et procede de realisation
GB2299890A (en) * 1993-09-10 1996-10-16 Thomson Csf A quantum well detector and its method of production
GB2299890B (en) * 1993-09-10 1997-08-20 Thomson Csf A quantum well detector and its method of production
DE4432031B4 (de) * 1993-09-10 2007-01-04 Thomson-Csf Detektor mit Quantensenke und Verfahren zu seiner Herstellung
FR2803949A1 (fr) * 1994-03-15 2001-07-20 Loral Vought Systems Corp Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
EP0866504A2 (fr) * 1997-03-19 1998-09-23 Lockheed Martin Vought Systems Corporation Detecteur infra-rouge à couplage par pastille
EP0866504A3 (fr) * 1997-03-19 1999-06-23 Lockheed Martin Vought Systems Corporation Detecteur infra-rouge à couplage par pastille
FR2761813A1 (fr) * 1997-04-08 1998-10-09 Thomson Csf Detecteur d'ondes electromagnetiques multielements a diaphotie reduite
WO1998045884A1 (fr) * 1997-04-08 1998-10-15 Thomson-Csf Detecteur d'ondes electromagnetiques multielements a diaphotie reduite
US6909096B1 (en) 1999-03-12 2005-06-21 Saabtech Electronics Ab Quantum well based two-dimensional detector for IR radiation and camera system with such a detector
KR100349599B1 (ko) * 2000-04-14 2002-08-23 삼성전자 주식회사 양자 효율이 향상된 양자점 적외선 탐지기
FR2815417A1 (fr) * 2000-10-13 2002-04-19 Shakticom Filtre optique, son procede de fabrication et son utilisation pour un systeme multiplex
WO2002031551A1 (fr) * 2000-10-13 2002-04-18 Highwave Optical Technologies Marseille Filtres optiques, leur procede de fabrication et leur utilisation pour un systeme multiplexe
FR2816062A1 (fr) * 2000-10-27 2002-05-03 Shakticom Filtre optique, son procede de fabrication par dopage ionique et son utilisation pour un systeme multiplex
FR2855653A1 (fr) * 2003-05-27 2004-12-03 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
WO2004107392A3 (fr) * 2003-05-27 2005-01-13 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
WO2004107392A2 (fr) * 2003-05-27 2004-12-09 Thales Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
US7687760B2 (en) 2003-05-27 2010-03-30 Thales Amorphous optical coupling structure for an electromagnetic wave detector and associated detector
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
WO2011149960A3 (fr) * 2010-05-24 2012-04-05 University Of Florida Research Foundation Inc. Procédé et appareil destinés à fournir une couche de blocage de charge sur un dispositif de conversion ascendante à infrarouge
US8716701B2 (en) 2010-05-24 2014-05-06 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US9997571B2 (en) 2010-05-24 2018-06-12 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
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SE468188B (sv) 1992-11-16
ATE145091T1 (de) 1996-11-15
SE9101034L (sv) 1992-10-09
DE69214990D1 (de) 1996-12-12
JP2889759B2 (ja) 1999-05-10
SE9101034D0 (sv) 1991-04-08
EP0508970B1 (fr) 1996-11-06
US5229614A (en) 1993-07-20
DE69214990T2 (de) 1997-05-28
JPH05118915A (ja) 1993-05-14

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