ATE370264T1 - Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik - Google Patents

Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik

Info

Publication number
ATE370264T1
ATE370264T1 AT03763891T AT03763891T ATE370264T1 AT E370264 T1 ATE370264 T1 AT E370264T1 AT 03763891 T AT03763891 T AT 03763891T AT 03763891 T AT03763891 T AT 03763891T AT E370264 T1 ATE370264 T1 AT E370264T1
Authority
AT
Austria
Prior art keywords
ingot
support
front face
optoelectronics
optics
Prior art date
Application number
AT03763891T
Other languages
English (en)
Inventor
Bruno Ghyselen
Fabrice Letertre
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0209021A external-priority patent/FR2842650B1/fr
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE370264T1 publication Critical patent/ATE370264T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
AT03763891T 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik ATE370264T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0209021A FR2842650B1 (fr) 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
US46150403P 2003-04-09 2003-04-09

Publications (1)

Publication Number Publication Date
ATE370264T1 true ATE370264T1 (de) 2007-09-15

Family

ID=30117030

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03763891T ATE370264T1 (de) 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik

Country Status (7)

Country Link
EP (1) EP1537258B9 (de)
JP (1) JP4708185B2 (de)
AT (1) ATE370264T1 (de)
AU (1) AU2003246718A1 (de)
DE (1) DE60315670T2 (de)
TW (1) TWI273659B (de)
WO (1) WO2004007816A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004018951D1 (de) * 2004-11-09 2009-02-26 Soitec Silicon On Insulator Verfahren zum Herstellen von zusammengesetzten Wafern
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
FR2906077B1 (fr) * 2006-09-18 2009-03-06 Michel Roche Procede et appareillages associes, destine a la fabrication de substrats semiconducteurs poly ou monocristallins minces
WO2009092926A1 (fr) * 2008-01-21 2009-07-30 Michel Roche Procédé et appareillages associés, destiné à la fabrication de substrats semiconducteurs, poly ou monocristallins minces
EP2123721B1 (de) 2008-04-15 2013-11-27 Eckart GmbH Perlglanzpigmente auf Basis von feinen und dünnen Substraten
EP2177215A1 (de) 2008-10-17 2010-04-21 Laboratorios Del. Dr. Esteve, S.A. Co-Kristalle von Tramadol und NSARs
DE102009031266A1 (de) 2009-06-30 2011-01-13 Eckart Gmbh Tintenstrahltinte enthaltend Perlglanzpigmente auf Basis von feinen und dünnen Substraten
KR102323184B1 (ko) * 2019-10-22 2021-11-09 주식회사 쎄닉 적층체, 잉곳의 제조방법 및 웨이퍼의 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102514A (ja) * 1988-10-12 1990-04-16 Hitachi Ltd 半導体基板の製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
JP4075021B2 (ja) * 1997-12-26 2008-04-16 ソニー株式会社 半導体基板の製造方法および薄膜半導体部材の製造方法
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6503321B2 (en) * 1998-02-17 2003-01-07 The Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
JP3932369B2 (ja) * 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
EP2259299A1 (de) * 1999-10-14 2010-12-08 Shin-Etsu Handotai Co., Ltd. Verfahren zur Herstellung von SOI-Wafern und SOI-Wafer
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
JP2002043552A (ja) * 2000-07-27 2002-02-08 Toshiba Ceramics Co Ltd ウェーハの製造方法
JP2002141327A (ja) * 2000-10-31 2002-05-17 Canon Inc 結晶薄膜の製造方法

Also Published As

Publication number Publication date
JP2005533396A (ja) 2005-11-04
WO2004007816A1 (en) 2004-01-22
TW200409247A (en) 2004-06-01
DE60315670T2 (de) 2008-06-05
AU2003246718A1 (en) 2004-02-02
EP1537258B9 (de) 2008-10-29
EP1537258B1 (de) 2007-08-15
JP4708185B2 (ja) 2011-06-22
TWI273659B (en) 2007-02-11
EP1537258A1 (de) 2005-06-08
DE60315670D1 (de) 2007-09-27

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