ATE370264T1 - Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik - Google Patents

Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik

Info

Publication number
ATE370264T1
ATE370264T1 AT03763891T AT03763891T ATE370264T1 AT E370264 T1 ATE370264 T1 AT E370264T1 AT 03763891 T AT03763891 T AT 03763891T AT 03763891 T AT03763891 T AT 03763891T AT E370264 T1 ATE370264 T1 AT E370264T1
Authority
AT
Austria
Prior art keywords
ingot
support
front face
optoelectronics
optics
Prior art date
Application number
AT03763891T
Other languages
English (en)
Inventor
Bruno Ghyselen
Fabrice Letertre
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0209021A external-priority patent/FR2842650B1/fr
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE370264T1 publication Critical patent/ATE370264T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Chemically Coating (AREA)
AT03763891T 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik ATE370264T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0209021A FR2842650B1 (fr) 2002-07-17 2002-07-17 Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
US46150403P 2003-04-09 2003-04-09

Publications (1)

Publication Number Publication Date
ATE370264T1 true ATE370264T1 (de) 2007-09-15

Family

ID=30117030

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03763891T ATE370264T1 (de) 2002-07-17 2003-07-16 Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik

Country Status (7)

Country Link
EP (1) EP1537258B9 (de)
JP (1) JP4708185B2 (de)
AT (1) ATE370264T1 (de)
AU (1) AU2003246718A1 (de)
DE (1) DE60315670T2 (de)
TW (1) TWI273659B (de)
WO (1) WO2004007816A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1962340A3 (de) * 2004-11-09 2009-12-23 S.O.I. TEC Silicon Verfahren zur Herstellung von zusammengesetzten Wafern
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
FR2906077B1 (fr) * 2006-09-18 2009-03-06 Michel Roche Procede et appareillages associes, destine a la fabrication de substrats semiconducteurs poly ou monocristallins minces
WO2009092926A1 (fr) * 2008-01-21 2009-07-30 Michel Roche Procédé et appareillages associés, destiné à la fabrication de substrats semiconducteurs, poly ou monocristallins minces
EP2123721B1 (de) 2008-04-15 2013-11-27 Eckart GmbH Perlglanzpigmente auf Basis von feinen und dünnen Substraten
EP2177215A1 (de) 2008-10-17 2010-04-21 Laboratorios Del. Dr. Esteve, S.A. Co-Kristalle von Tramadol und NSARs
DE102009031266A1 (de) 2009-06-30 2011-01-13 Eckart Gmbh Tintenstrahltinte enthaltend Perlglanzpigmente auf Basis von feinen und dünnen Substraten
KR102323184B1 (ko) * 2019-10-22 2021-11-09 주식회사 쎄닉 적층체, 잉곳의 제조방법 및 웨이퍼의 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102514A (ja) * 1988-10-12 1990-04-16 Hitachi Ltd 半導体基板の製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
JP4075021B2 (ja) * 1997-12-26 2008-04-16 ソニー株式会社 半導体基板の製造方法および薄膜半導体部材の製造方法
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6503321B2 (en) * 1998-02-17 2003-01-07 The Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
JP3932369B2 (ja) * 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
US6846718B1 (en) * 1999-10-14 2005-01-25 Shin-Etsu Handotai Co., Ltd. Method for producing SOI wafer and SOI wafer
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
JP2002043552A (ja) * 2000-07-27 2002-02-08 Toshiba Ceramics Co Ltd ウェーハの製造方法
JP2002141327A (ja) * 2000-10-31 2002-05-17 Canon Inc 結晶薄膜の製造方法

Also Published As

Publication number Publication date
EP1537258B1 (de) 2007-08-15
EP1537258A1 (de) 2005-06-08
DE60315670T2 (de) 2008-06-05
TW200409247A (en) 2004-06-01
JP2005533396A (ja) 2005-11-04
DE60315670D1 (de) 2007-09-27
JP4708185B2 (ja) 2011-06-22
AU2003246718A1 (en) 2004-02-02
EP1537258B9 (de) 2008-10-29
TWI273659B (en) 2007-02-11
WO2004007816A1 (en) 2004-01-22

Similar Documents

Publication Publication Date Title
WO2002043124A3 (fr) Procede de fabrication d&#39;un substrat contenant une couche mince sur un support et substrat obtenu par ce procede
EP1423259A4 (de) FREISTEHENDE (Al, GA, IN)N-STRUKTUR UND TRENNVERFAHREN ZUR HERSTELLUNG DERSELBEN
DE60333712D1 (de) Verfahren zur Herstellung eines Substrats durch den Transfer eines Geber-Wafers mit Fremdatomen, und ein entsprechender Geber-Wafer
WO2003015143A1 (fr) Film semi-conducteur en nitrure du groupe iii et son procede de production
ATE524577T1 (de) Verfahren zur herstellung einer epitaktisch aufgewachsenen schicht
ATE465514T1 (de) Herstellungsverfahren für eine bruchzone in einem substrat durch koimplantation
DE60238548D1 (de) Verfahren zur herstellung dünner schichten, die mikrokomponenten enthalten
ATE490549T1 (de) Herstellung von gitterabstimmungs- halbleitersubstraten
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
EP1367150A4 (de) Verfahren zur herstellung von halbleiterkristall und halbleiter-leuchtelement
EP0996145A3 (de) Verfahren zur Herstellung von Halbleitersubstraten
ATE433727T1 (de) Verfahren zur herstellung von produkten durch freiform-lasersintern
WO2004006311A3 (en) Transfer of a thin layer from a wafer comprising a buffer layer
DE50008112D1 (de) Verfahren zur herstellung von mikromechanischen und mikrooptischen bauelementen aus glasartigen materialien
ATE515794T1 (de) Verfahren zur herstellung eines geoi-wafers (germanium on insulator)
ATE480495T1 (de) Verfahren zur herstellung von ein gettermaterial enthaltenden mikromechanischen vorrichtungen und so hergestellte vorrichtungen
EP1429381A3 (de) Verfahren zur Herstellung eines Verbundmaterials
DE60139385D1 (de) Verfahren und vorrichtung zur herstellung von substraten
WO2003094224A8 (en) Process for manufacturing substrates with detachment of a temporary support, and associated substrate
TW200639969A (en) Treatmeny of a removed layer of Si1-yGey
ATE370264T1 (de) Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
ATE383656T1 (de) Verfahren zur herstellung eines verbundmaterials und verfahren zur auswahl eines wafers
WO2004081974A3 (en) A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics
EP1605499A3 (de) Verfahren zur Herstellung einer kristallinen Siliziumschicht
ATE332211T1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties