IN2012DN03251A - - Google Patents
Download PDFInfo
- Publication number
- IN2012DN03251A IN2012DN03251A IN3251DEN2012A IN2012DN03251A IN 2012DN03251 A IN2012DN03251 A IN 2012DN03251A IN 3251DEN2012 A IN3251DEN2012 A IN 3251DEN2012A IN 2012DN03251 A IN2012DN03251 A IN 2012DN03251A
- Authority
- IN
- India
- Prior art keywords
- substrate
- core
- terminals
- coupled
- layers
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/053—Oxides composed of metals from groups of the periodic table
- H01L2924/0544—14th Group
- H01L2924/05442—SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/096—Vertically aligned vias, holes or stacked vias
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Combinations Of Printed Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/653,722 US9420707B2 (en) | 2009-12-17 | 2009-12-17 | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
PCT/US2010/054931 WO2011084216A2 (en) | 2009-12-17 | 2010-11-01 | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN03251A true IN2012DN03251A (zh) | 2015-10-23 |
Family
ID=44149499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3251DEN2012 IN2012DN03251A (zh) | 2009-12-17 | 2010-11-01 |
Country Status (9)
Country | Link |
---|---|
US (2) | US9420707B2 (zh) |
JP (2) | JP2013512583A (zh) |
KR (1) | KR101466582B1 (zh) |
CN (2) | CN102656685B (zh) |
DE (1) | DE112010004888B4 (zh) |
GB (1) | GB2488265B (zh) |
IN (1) | IN2012DN03251A (zh) |
TW (1) | TWI467717B (zh) |
WO (1) | WO2011084216A2 (zh) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
US20110229687A1 (en) * | 2010-03-19 | 2011-09-22 | Qualcomm Incorporated | Through Glass Via Manufacturing Process |
JP5419226B2 (ja) * | 2010-07-29 | 2014-02-19 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
JP6088724B2 (ja) * | 2010-08-31 | 2017-03-01 | ユニ・チャーム株式会社 | 吸収体の製造装置、及び通気性部材の製造方法 |
US8853072B2 (en) * | 2011-06-06 | 2014-10-07 | Micron Technology, Inc. | Methods of forming through-substrate interconnects |
US8780576B2 (en) * | 2011-09-14 | 2014-07-15 | Invensas Corporation | Low CTE interposer |
US9445496B2 (en) | 2012-03-07 | 2016-09-13 | Intel Corporation | Glass clad microelectronic substrate |
US10629993B2 (en) * | 2012-07-19 | 2020-04-21 | HungYu David Yang | Method and apparatus for a 60 GHz endfire antenna |
US20140027163A1 (en) * | 2012-07-30 | 2014-01-30 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
US10115671B2 (en) | 2012-08-03 | 2018-10-30 | Snaptrack, Inc. | Incorporation of passives and fine pitch through via for package on package |
US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
US9373586B2 (en) | 2012-11-14 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper etching integration scheme |
JP2014120687A (ja) * | 2012-12-18 | 2014-06-30 | Hitachi Chemical Co Ltd | 積層板、多層積層板、プリント配線板、多層プリント配線板及び積層板の製造方法 |
US9312219B2 (en) * | 2012-12-28 | 2016-04-12 | Dyi-chung Hu | Interposer and packaging substrate having the interposer |
US20150366077A1 (en) * | 2013-01-30 | 2015-12-17 | Kyocera Corporation | Method for producing mounted structure |
KR20150014167A (ko) * | 2013-07-29 | 2015-02-06 | 삼성전기주식회사 | 유리 코어가 구비된 인쇄회로기판 |
US9178572B1 (en) * | 2013-09-24 | 2015-11-03 | Amazon Technologies, Inc. | Integrated radio frequency or near field communications antenna |
KR20150042042A (ko) * | 2013-10-10 | 2015-04-20 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
JP5846185B2 (ja) | 2013-11-21 | 2016-01-20 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
JP6273873B2 (ja) * | 2014-02-04 | 2018-02-07 | 大日本印刷株式会社 | ガラスインターポーザー基板の製造方法 |
JP2015146401A (ja) * | 2014-02-04 | 2015-08-13 | 大日本印刷株式会社 | ガラスインターポーザー |
CN106463466B (zh) * | 2014-05-06 | 2019-11-08 | 英特尔公司 | 具有集成天线的多层封装件 |
JP2016009844A (ja) * | 2014-06-26 | 2016-01-18 | ソニー株式会社 | 半導体装置および半導体装置の製造方法 |
US9368436B2 (en) * | 2014-08-04 | 2016-06-14 | Infineon Technologies Ag | Source down semiconductor devices and methods of formation thereof |
CN104409429A (zh) * | 2014-11-23 | 2015-03-11 | 北京工业大学 | 一种带应力牺牲结构的芯片封装结构及封装方法 |
JP6447075B2 (ja) * | 2014-12-10 | 2019-01-09 | 凸版印刷株式会社 | 配線基板、半導体装置及び半導体装置の製造方法 |
US9397048B1 (en) * | 2015-03-23 | 2016-07-19 | Inotera Memories, Inc. | Semiconductor structure and manufacturing method thereof |
CN106356351B (zh) * | 2015-07-15 | 2019-02-01 | 凤凰先驱股份有限公司 | 基板结构及其制作方法 |
TWI581460B (zh) * | 2015-09-04 | 2017-05-01 | 錼創科技股份有限公司 | 發光元件及其製作方法 |
KR102470168B1 (ko) * | 2015-12-08 | 2022-11-23 | 삼성전기주식회사 | 패키지기판 |
CN107424974A (zh) * | 2016-05-24 | 2017-12-01 | 胡迪群 | 具有埋入式噪声屏蔽墙的封装基板 |
JP6372546B2 (ja) * | 2016-11-15 | 2018-08-15 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
DE102016222885A1 (de) * | 2016-11-21 | 2018-05-24 | Daimler Ag | Elektronisches Bauteil und Verfahren zu dessen Herstellung |
US11254087B2 (en) * | 2017-04-26 | 2022-02-22 | Corning Incorporated | Micro-perforated glass laminates and methods of making the same |
KR102629592B1 (ko) | 2017-07-24 | 2024-01-26 | 코닝 인코포레이티드 | 정밀 구조화된 유리 물품, 집적회로 패키지, 광학 장치, 미세유체 장치, 및 그 제조 방법 |
TWI713842B (zh) * | 2018-05-10 | 2020-12-21 | 恆勁科技股份有限公司 | 覆晶封裝基板之製法及其結構 |
US10672859B2 (en) | 2018-06-27 | 2020-06-02 | Intel Corporation | Embedded magnetic inductor |
WO2020081318A1 (en) * | 2018-10-19 | 2020-04-23 | Corning Incorporated | Device including vias and method and material for fabricating vias |
EP3916772A4 (en) | 2019-03-12 | 2023-04-05 | Absolics Inc. | PACKAGING SUBSTRATE AND SEMICONDUCTOR DEVICE WITH IT |
CN113424304B (zh) | 2019-03-12 | 2024-04-12 | 爱玻索立克公司 | 装载盒及对象基板的装载方法 |
WO2020185016A1 (ko) | 2019-03-12 | 2020-09-17 | 에스케이씨 주식회사 | 패키징 기판 및 이를 포함하는 반도체 장치 |
KR102515304B1 (ko) | 2019-03-29 | 2023-03-29 | 앱솔릭스 인코포레이티드 | 반도체용 패키징 유리기판, 반도체용 패키징 기판 및 반도체 장치 |
CN110335542B (zh) * | 2019-04-03 | 2021-04-30 | 上海天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
CN112039460B (zh) * | 2019-07-19 | 2022-05-10 | 中芯集成电路(宁波)有限公司 | 薄膜体声波谐振器及其制作方法 |
US20210050289A1 (en) * | 2019-08-13 | 2021-02-18 | Intel Corporation | Hybrid glass core for wafer level and panel level packaging applications |
JP7104245B2 (ja) | 2019-08-23 | 2022-07-20 | アブソリックス インコーポレイテッド | パッケージング基板及びこれを含む半導体装置 |
US11659660B2 (en) * | 2019-11-01 | 2023-05-23 | Raytheon Company | Oxide liner stress buffer |
GB2590643B (en) * | 2019-12-20 | 2022-08-03 | Graphcore Ltd | Method of manufacturing a computer device |
US11503704B2 (en) * | 2019-12-30 | 2022-11-15 | General Electric Company | Systems and methods for hybrid glass and organic packaging for radio frequency electronics |
CN111244063B (zh) | 2020-03-12 | 2023-03-21 | 奥特斯科技(重庆)有限公司 | 部件承载件及制造部件承载件的方法 |
US11398419B2 (en) * | 2020-07-16 | 2022-07-26 | Advanced Semiconductor Engineering, Inc. | Wiring structure and method for manufacturing the same |
US20230197541A1 (en) * | 2021-12-21 | 2023-06-22 | Intel Corporation | Glass vias and planes with reduced tapering |
CN114430001A (zh) * | 2022-01-10 | 2022-05-03 | 深圳Tcl新技术有限公司 | 玻璃基板加工方法及显示装置 |
US20240153857A1 (en) * | 2022-11-08 | 2024-05-09 | Intel Corporation | High aspect ratio tgv substrates through direct hybrid bonding of thin tgv substrates |
US20240154514A1 (en) * | 2022-11-09 | 2024-05-09 | Intel Corporation | Current equalization and reconfigurable double control loop for voltage regulators |
US12100632B2 (en) * | 2023-02-10 | 2024-09-24 | Dyi-chung Hu | Glass core substrate and manufacturing method thereof |
CN117038633B (zh) * | 2023-10-08 | 2024-01-26 | 甬矽电子(宁波)股份有限公司 | 扇出型封装结构、封装产品和扇出型封装方法 |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958317A (en) | 1974-09-25 | 1976-05-25 | Rockwell International Corporation | Copper surface treatment for epoxy bonding |
US4221047A (en) * | 1979-03-23 | 1980-09-09 | International Business Machines Corporation | Multilayered glass-ceramic substrate for mounting of semiconductor device |
US4379553A (en) * | 1979-07-20 | 1983-04-12 | General Electric Company | Bowling lane with fire retardant decorative surface |
US4327143A (en) * | 1981-01-23 | 1982-04-27 | Westinghouse Electric Corp. | Moisture resistant laminates impregnated with an impregnating composition comprising epoxy resin and a dicyandiamide derivative |
US4404060A (en) * | 1981-05-08 | 1983-09-13 | Siemens Aktiengesellschaft | Method for producing insulating ring zones by galvanic and etch technologies at orifice areas of through-holes in a plate |
US4664309A (en) * | 1983-06-30 | 1987-05-12 | Raychem Corporation | Chip mounting device |
US4622058A (en) | 1984-06-22 | 1986-11-11 | International Business Machines Corporation | Formation of a multi-layer glass-metallized structure formed on and interconnected to multi-layered-metallized ceramic substrate |
JPS61116881A (ja) | 1984-11-12 | 1986-06-04 | Nippon Soken Inc | 電極の接続方法 |
US4639543A (en) * | 1985-02-04 | 1987-01-27 | Richard J. Birch | Semiconductor devices having a metallic glass substrate |
JPH0634452B2 (ja) | 1985-08-05 | 1994-05-02 | 株式会社日立製作所 | セラミツクス回路基板 |
US4828597A (en) * | 1987-12-07 | 1989-05-09 | General Electric Company | Flexible glass fiber mat bonding method |
JPH01247041A (ja) | 1988-03-28 | 1989-10-02 | Meiji Seika Kaisha Ltd | 高圧ガス封入キャンデイーの製造方法 |
DE3830364C1 (zh) | 1988-09-07 | 1990-01-18 | Schott Glaswerke, 6500 Mainz, De | |
EP0569350B1 (en) | 1988-09-30 | 1996-11-27 | Right Hemisphere Pty. Limited | Television programme distribution system |
JP2598152B2 (ja) * | 1990-04-28 | 1997-04-09 | シャープ株式会社 | タッチパネル |
US5294238A (en) * | 1991-03-27 | 1994-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Glass substrate for a semiconductor device and method for making same |
US5253319A (en) * | 1992-02-24 | 1993-10-12 | Corning Incorporated | Planar optical waveguides with planar optical elements |
JPH05267853A (ja) | 1992-03-23 | 1993-10-15 | Nec Toyama Ltd | 多層プリント配線板の製造方法 |
US5466488A (en) * | 1993-02-08 | 1995-11-14 | Mitsubishi Materials Corporation | Method of making glazed AlN substrate with an Al2 O3 -SiO2 interfacial layer |
JPH06237081A (ja) | 1993-02-10 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 多層セラミック基板の製造方法 |
JP3102192B2 (ja) * | 1993-03-18 | 2000-10-23 | 株式会社日立製作所 | 多層配線基板の製造方法 |
US5455385A (en) * | 1993-06-28 | 1995-10-03 | Harris Corporation | Multilayer LTCC tub architecture for hermetically sealing semiconductor die, external electrical access for which is provided by way of sidewall recesses |
US5585675A (en) * | 1994-05-11 | 1996-12-17 | Harris Corporation | Semiconductor die packaging tub having angularly offset pad-to-pad via structure configured to allow three-dimensional stacking and electrical interconnections among multiple identical tubs |
JP2595909B2 (ja) * | 1994-09-14 | 1997-04-02 | 日本電気株式会社 | 半導体装置 |
US5705855A (en) * | 1995-01-13 | 1998-01-06 | Motorola, Inc. | Integrated circuit for directly attaching to a glass substrate and method for manufacturing the same |
JPH0917919A (ja) * | 1995-06-29 | 1997-01-17 | Fujitsu Ltd | 半導体装置 |
US5917652A (en) * | 1996-02-05 | 1999-06-29 | Minnesota Mining And Manufacturing Company | Durable retroreflective elements |
TW322591B (zh) * | 1996-02-09 | 1997-12-11 | Handotai Energy Kenkyusho Kk | |
JP2959480B2 (ja) * | 1996-08-12 | 1999-10-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US5981880A (en) * | 1996-08-20 | 1999-11-09 | International Business Machines Corporation | Electronic device packages having glass free non conductive layers |
EP1012888B1 (en) * | 1996-10-17 | 2009-03-04 | Avago Technologies Wireless IP (Singapore) Pte. Ltd. | Method for fabricating fbars on glass substrates |
EP0838980B1 (en) | 1996-10-25 | 2006-03-08 | Canon Kabushiki Kaisha | Glass circuit substrate and fabrication method thereof |
JP3395621B2 (ja) | 1997-02-03 | 2003-04-14 | イビデン株式会社 | プリント配線板及びその製造方法 |
JP3961092B2 (ja) | 1997-06-03 | 2007-08-15 | 株式会社東芝 | 複合配線基板、フレキシブル基板、半導体装置、および複合配線基板の製造方法 |
JP4328465B2 (ja) * | 1997-10-24 | 2009-09-09 | 奇美電子股▲分▼有限公司 | 構成層として薄い硼珪酸ガラス基質を含んでなる積層物、その使用方法及び作製方法 |
WO1999045588A2 (en) * | 1998-03-02 | 1999-09-10 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive |
US6154176A (en) * | 1998-08-07 | 2000-11-28 | Sarnoff Corporation | Antennas formed using multilayer ceramic substrates |
JP2000119047A (ja) | 1998-10-08 | 2000-04-25 | Nippon Sheet Glass Co Ltd | 合わせガラス体とその製造方法 |
JP4221859B2 (ja) | 1999-02-12 | 2009-02-12 | 株式会社デンソー | 半導体装置の製造方法 |
US6539750B1 (en) * | 1999-04-30 | 2003-04-01 | Matsushita Electric Industrial Co., Ltd. | Glass substrate forming mold and production method for glass substrate |
JP3756041B2 (ja) * | 1999-05-27 | 2006-03-15 | Hoya株式会社 | 多層プリント配線板の製造方法 |
EP1744609B1 (en) * | 1999-06-02 | 2012-12-12 | Ibiden Co., Ltd. | Multi-layer printed circuit board and method of manufacturing multi-layer printed circuit board |
US6413620B1 (en) | 1999-06-30 | 2002-07-02 | Kyocera Corporation | Ceramic wiring substrate and method of producing the same |
JP2001053191A (ja) | 1999-08-05 | 2001-02-23 | Fujitsu Ltd | 電極突起を導出した基板及びその製造方法 |
US7514637B1 (en) * | 1999-08-06 | 2009-04-07 | Ibiden Co., Ltd. | Electroplating solution, method for fabricating multilayer printed wiring board using the solution, and multilayer printed wiring board |
US6876554B1 (en) * | 1999-09-02 | 2005-04-05 | Ibiden Co., Ltd. | Printing wiring board and method of producing the same and capacitor to be contained in printed wiring board |
CN100521868C (zh) * | 1999-10-26 | 2009-07-29 | 伊比登株式会社 | 多层印刷配线板及多层印刷配线板的制造方法 |
TW512653B (en) * | 1999-11-26 | 2002-12-01 | Ibiden Co Ltd | Multilayer circuit board and semiconductor device |
KR100890534B1 (ko) * | 2000-02-25 | 2009-03-27 | 이비덴 가부시키가이샤 | 다층프린트배선판 및 다층프린트배선판의 제조방법 |
DE10019355A1 (de) * | 2000-04-18 | 2001-10-31 | Schott Glas | Glaskörper mit erhöhter Festigkeit |
JP2001307547A (ja) * | 2000-04-25 | 2001-11-02 | Murata Mfg Co Ltd | 導電性組成物およびそれを用いた印刷回路板 |
JP3407716B2 (ja) | 2000-06-08 | 2003-05-19 | 株式会社村田製作所 | 複合積層電子部品 |
JP2001354439A (ja) * | 2000-06-12 | 2001-12-25 | Matsushita Electric Ind Co Ltd | ガラス基板の加工方法および高周波回路の製作方法 |
US6753483B2 (en) | 2000-06-14 | 2004-06-22 | Matsushita Electric Industrial Co., Ltd. | Printed circuit board and method of manufacturing the same |
DE10034507C1 (de) * | 2000-07-15 | 2002-02-21 | Schott Glas | Verfahren zum Erzeugen von Mikrostrukturen auf Glas- oder Kunststoffsubstraten nach der Heißformtechnologie und zugehöriges Formgebungswerkzeug |
US6518514B2 (en) * | 2000-08-21 | 2003-02-11 | Matsushita Electric Industrial Co., Ltd. | Circuit board and production of the same |
JP4372330B2 (ja) | 2000-10-30 | 2009-11-25 | 富士通株式会社 | 分布型光増幅装置、光通信用の局および光通信システム |
US6577490B2 (en) * | 2000-12-12 | 2003-06-10 | Ngk Spark Plug Co., Ltd. | Wiring board |
JP2002290030A (ja) * | 2001-03-23 | 2002-10-04 | Ngk Spark Plug Co Ltd | 配線基板 |
JP3905325B2 (ja) | 2001-04-23 | 2007-04-18 | 富士通株式会社 | 多層プリント配線板 |
JP4092890B2 (ja) | 2001-05-31 | 2008-05-28 | 株式会社日立製作所 | マルチチップモジュール |
JP2002366051A (ja) * | 2001-06-08 | 2002-12-20 | Sanyo Electric Co Ltd | 集積回路チップ及びこれを用いた表示装置 |
WO2003007370A1 (en) | 2001-07-12 | 2003-01-23 | Hitachi, Ltd. | Wiring glass substrate and method of manufacturing the wiring glass substrate, conductive paste and semiconductor module used for wiring glass substrate, and method of forming wiring substrate and conductor |
EP1419102A2 (de) * | 2001-08-24 | 2004-05-19 | Schott Ag | Verfahren zur herstellung von mikro-elektromechanischen bauelementen |
JP2003110238A (ja) | 2001-09-28 | 2003-04-11 | Murata Mfg Co Ltd | ガラスセラミック多層基板の製造方法 |
JP4079699B2 (ja) * | 2001-09-28 | 2008-04-23 | 富士通株式会社 | 多層配線回路基板 |
TWI312166B (en) * | 2001-09-28 | 2009-07-11 | Toppan Printing Co Ltd | Multi-layer circuit board, integrated circuit package, and manufacturing method for multi-layer circuit board |
JP2003142804A (ja) | 2001-10-31 | 2003-05-16 | Kyocera Corp | 回路基板 |
US6673698B1 (en) * | 2002-01-19 | 2004-01-06 | Megic Corporation | Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers |
DE10215654A1 (de) * | 2002-04-09 | 2003-11-06 | Infineon Technologies Ag | Elektronisches Bauteil mit mindestens einem Halbleiterchip und Flip-Chip-Kontakten sowie Verfahren zu seiner Herstellung |
US6657304B1 (en) * | 2002-06-06 | 2003-12-02 | Advanced Micro Devices, Inc. | Conformal barrier liner in an integrated circuit interconnect |
US7260890B2 (en) | 2002-06-26 | 2007-08-28 | Georgia Tech Research Corporation | Methods for fabricating three-dimensional all organic interconnect structures |
US7102367B2 (en) * | 2002-07-23 | 2006-09-05 | Fujitsu Limited | Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof |
AU2003261759A1 (en) | 2002-08-30 | 2004-03-19 | Nittobo Acoustic Engineering Co., Ltd. | Sound source search system |
JP4528124B2 (ja) * | 2002-09-06 | 2010-08-18 | フラウンホファー ゲセルシャフト ツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー.ファオ. | 平面基板構造化方法、平面基板製造方法、部品を電気的に接触させる方法 |
TW560698U (en) * | 2002-09-09 | 2003-11-01 | Via Tech Inc | Structure of chip package |
JP3822549B2 (ja) * | 2002-09-26 | 2006-09-20 | 富士通株式会社 | 配線基板 |
TWI227050B (en) * | 2002-10-11 | 2005-01-21 | Sanyo Electric Co | Semiconductor device and method for manufacturing the same |
GB2420912B (en) * | 2002-12-11 | 2006-07-26 | Dainippon Printing Co Ltd | Multilayer wiring board and manufacture method thereof |
KR100919674B1 (ko) | 2002-12-27 | 2009-10-06 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP4199198B2 (ja) * | 2003-01-16 | 2008-12-17 | 富士通株式会社 | 多層配線基板およびその製造方法 |
WO2004082036A1 (ja) * | 2003-03-10 | 2004-09-23 | Toyoda Gosei Co., Ltd. | 固体素子デバイスおよびその製造方法 |
JP2005005488A (ja) | 2003-06-12 | 2005-01-06 | Dainippon Printing Co Ltd | 半導体モジュールおよびそれらの製造方法 |
JP2005045150A (ja) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Ind Co Ltd | 中間接続用配線基材および多層配線基板、ならびにこれらの製造方法 |
WO2005013653A1 (ja) * | 2003-07-30 | 2005-02-10 | International Business Machines Corporation | プリント配線板及びその製造方法 |
JP4134172B2 (ja) * | 2003-09-09 | 2008-08-13 | Hoya株式会社 | 両面配線ガラス基板の製造方法 |
JP2005144622A (ja) * | 2003-11-18 | 2005-06-09 | Seiko Epson Corp | 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置 |
JP3965695B2 (ja) * | 2004-01-30 | 2007-08-29 | 船井電機株式会社 | 液晶表示装置 |
JP4387231B2 (ja) * | 2004-03-31 | 2009-12-16 | 新光電気工業株式会社 | キャパシタ実装配線基板及びその製造方法 |
US6976306B1 (en) * | 2004-07-12 | 2005-12-20 | Unitech Printed Circuit Board Corporation | Modular method for manufacturing circuit board |
JP4528062B2 (ja) | 2004-08-25 | 2010-08-18 | 富士通株式会社 | 半導体装置およびその製造方法 |
US7339260B2 (en) * | 2004-08-27 | 2008-03-04 | Ngk Spark Plug Co., Ltd. | Wiring board providing impedance matching |
DE102004049233A1 (de) * | 2004-10-09 | 2006-04-20 | Schott Ag | Verfahren zur Mikrostrukturierung von Substraten aus Flachglas |
KR100701205B1 (ko) | 2005-01-12 | 2007-03-29 | 박성호 | 적층재 접합방법 및 그 장치 |
KR100594327B1 (ko) | 2005-03-24 | 2006-06-30 | 삼성전자주식회사 | 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 |
JP4527585B2 (ja) | 2005-03-30 | 2010-08-18 | 財団法人鉄道総合技術研究所 | 軸受監視システム、及び軸受監視プログラム |
JP4534062B2 (ja) * | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US7759582B2 (en) * | 2005-07-07 | 2010-07-20 | Ibiden Co., Ltd. | Multilayer printed wiring board |
US7834273B2 (en) * | 2005-07-07 | 2010-11-16 | Ibiden Co., Ltd. | Multilayer printed wiring board |
JP4072176B2 (ja) * | 2005-08-29 | 2008-04-09 | 新光電気工業株式会社 | 多層配線基板の製造方法 |
US7164572B1 (en) * | 2005-09-15 | 2007-01-16 | Medtronic, Inc. | Multi-path, mono-polar co-fired hermetic electrical feedthroughs and methods of fabrication therfor |
US20070060970A1 (en) * | 2005-09-15 | 2007-03-15 | Burdon Jeremy W | Miniaturized co-fired electrical interconnects for implantable medical devices |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
JP4858538B2 (ja) * | 2006-02-14 | 2012-01-18 | 株式会社村田製作所 | 多層セラミック電子部品、多層セラミック基板、および多層セラミック電子部品の製造方法 |
JP4904891B2 (ja) * | 2006-03-31 | 2012-03-28 | 富士通株式会社 | 回路基板および電子装置、回路基板の製造方法 |
KR101037229B1 (ko) * | 2006-04-27 | 2011-05-25 | 스미토모 베이클리트 컴퍼니 리미티드 | 반도체 장치 및 반도체 장치의 제조 방법 |
JP5003082B2 (ja) * | 2006-09-26 | 2012-08-15 | 富士通株式会社 | インターポーザ及びその製造方法 |
JPWO2008053833A1 (ja) * | 2006-11-03 | 2010-02-25 | イビデン株式会社 | 多層プリント配線板 |
MY151034A (en) * | 2006-12-05 | 2014-03-31 | Sumitomo Bakelite Co | Semicondutor package, core layer material, buildup layer material, and sealing resin composition |
US8093506B2 (en) * | 2006-12-21 | 2012-01-10 | Ngk Spark Plug Co., Ltd. | Multilayer wiring board and power supply structure to be embedded in multilayer wiring board |
JP4279869B2 (ja) * | 2006-12-26 | 2009-06-17 | Tdk株式会社 | 多層セラミックス基板 |
US20080217748A1 (en) * | 2007-03-08 | 2008-09-11 | International Business Machines Corporation | Low cost and low coefficient of thermal expansion packaging structures and processes |
JP4265668B2 (ja) * | 2007-03-08 | 2009-05-20 | ソニー株式会社 | 回路基板の製造方法および回路基板 |
TWI416673B (zh) * | 2007-03-30 | 2013-11-21 | Sumitomo Bakelite Co | 覆晶半導體封裝用之接續構造、增層材料、密封樹脂組成物及電路基板 |
JP2008283140A (ja) | 2007-05-14 | 2008-11-20 | Shinko Electric Ind Co Ltd | 配線基板の製造方法及び配線基板 |
US8877565B2 (en) | 2007-06-28 | 2014-11-04 | Intel Corporation | Method of forming a multilayer substrate core structure using sequential microvia laser drilling and substrate core structure formed according to the method |
JP5080234B2 (ja) * | 2007-12-19 | 2012-11-21 | 新光電気工業株式会社 | 配線基板およびその製造方法 |
US20090174069A1 (en) * | 2008-01-04 | 2009-07-09 | National Semiconductor Corporation | I/o pad structure for enhancing solder joint reliability in integrated circuit devices |
JP5138395B2 (ja) | 2008-01-22 | 2013-02-06 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
TW200933899A (en) | 2008-01-29 | 2009-08-01 | Sanyo Electric Co | Mesa type semiconductor device and method for making the same |
JP5207868B2 (ja) * | 2008-02-08 | 2013-06-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5176995B2 (ja) | 2008-05-14 | 2013-04-03 | 凸版印刷株式会社 | 半導体パッケージ用多層基板の製造方法 |
JP5217639B2 (ja) * | 2008-05-30 | 2013-06-19 | 富士通株式会社 | コア基板およびプリント配線板 |
JPWO2009147936A1 (ja) | 2008-06-02 | 2011-10-27 | イビデン株式会社 | 多層プリント配線板の製造方法 |
JP5352146B2 (ja) * | 2008-07-23 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7749900B2 (en) * | 2008-09-30 | 2010-07-06 | Intel Corporation | Method and core materials for semiconductor packaging |
US20100164030A1 (en) * | 2008-12-31 | 2010-07-01 | International Business Machines Corporation | Chip carrier bearing large silicon for high performance computing and related method |
US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
US8207453B2 (en) * | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
JP2011204765A (ja) | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
US9167694B2 (en) * | 2010-11-02 | 2015-10-20 | Georgia Tech Research Corporation | Ultra-thin interposer assemblies with through vias |
US8674235B2 (en) | 2011-06-06 | 2014-03-18 | Intel Corporation | Microelectronic substrate for alternate package functionality |
US9445496B2 (en) * | 2012-03-07 | 2016-09-13 | Intel Corporation | Glass clad microelectronic substrate |
US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
-
2009
- 2009-12-17 US US12/653,722 patent/US9420707B2/en active Active
-
2010
- 2010-11-01 CN CN201080057189.8A patent/CN102656685B/zh active Active
- 2010-11-01 KR KR1020127015462A patent/KR101466582B1/ko active IP Right Grant
- 2010-11-01 JP JP2012542016A patent/JP2013512583A/ja active Pending
- 2010-11-01 CN CN201610344776.4A patent/CN105977234B/zh active Active
- 2010-11-01 GB GB1208343.2A patent/GB2488265B/en active Active
- 2010-11-01 WO PCT/US2010/054931 patent/WO2011084216A2/en active Application Filing
- 2010-11-01 IN IN3251DEN2012 patent/IN2012DN03251A/en unknown
- 2010-11-01 DE DE112010004888.6T patent/DE112010004888B4/de active Active
- 2010-11-03 TW TW099137777A patent/TWI467717B/zh active
-
2014
- 2014-09-22 JP JP2014192658A patent/JP2015043438A/ja active Pending
-
2016
- 2016-07-08 US US15/205,223 patent/US9761514B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101466582B1 (ko) | 2014-11-28 |
GB2488265B (en) | 2014-04-30 |
CN105977234A (zh) | 2016-09-28 |
US20160322290A1 (en) | 2016-11-03 |
US9420707B2 (en) | 2016-08-16 |
GB201208343D0 (en) | 2012-06-27 |
TW201138033A (en) | 2011-11-01 |
WO2011084216A3 (en) | 2011-09-09 |
JP2015043438A (ja) | 2015-03-05 |
DE112010004888B4 (de) | 2019-02-07 |
CN102656685A (zh) | 2012-09-05 |
GB2488265A (en) | 2012-08-22 |
US20110147059A1 (en) | 2011-06-23 |
US9761514B2 (en) | 2017-09-12 |
DE112010004888T5 (de) | 2012-10-18 |
WO2011084216A2 (en) | 2011-07-14 |
TWI467717B (zh) | 2015-01-01 |
JP2013512583A (ja) | 2013-04-11 |
CN102656685B (zh) | 2016-08-17 |
KR20120095420A (ko) | 2012-08-28 |
CN105977234B (zh) | 2020-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2012DN03251A (zh) | ||
IN2012DN03163A (zh) | ||
KR101044200B1 (ko) | 리지드-플렉서블 회로기판 및 그 제조방법 | |
WO2010104610A8 (en) | Stacked microelectronic assembly with microelectronic elements having vias extending through bond pads | |
WO2009057654A1 (ja) | 部品内蔵配線板、部品内蔵配線板の製造方法 | |
WO2009066504A1 (ja) | 部品内蔵モジュール | |
EP2400540A4 (en) | VACUUM-SEALED HOUSING, PCB WITH VACUUM-SEALED HOUSING, ELECTRONIC DEVICE AND METHOD FOR PRODUCING A VACUUM-SEALED HOUSING | |
WO2010068515A3 (en) | Electronic devices including flexible electrical circuits and related methods | |
TW200509368A (en) | Circuit module and manufacturing method thereof | |
MY147728A (en) | Process for manufacturing circuit board | |
GB201213447D0 (en) | Multilayer security wrap | |
EP2693472A3 (en) | Power semiconductor module and its method of manufacturing | |
JP2010153505A5 (zh) | ||
WO2009048154A1 (ja) | 半導体装置及びその設計方法 | |
TW200701430A (en) | Semiconductor device and manufacturing method therefor | |
EP1724832A3 (en) | Multilayer module formed of modules stacked on top of each other and method of manufacturing the same | |
WO2011140141A3 (en) | Printed circuit board with embossed hollow heatsink pad | |
WO2014162478A1 (ja) | 部品内蔵基板及びその製造方法 | |
WO2012175207A3 (de) | Elektronische baugruppe und verfahren zu deren herstellung | |
TWI256128B (en) | Panel for electro-optical apparatus, method of manufacture thereof, electro-optical apparatus and electronic apparatus | |
WO2011163333A3 (en) | Sandwich structure for directional coupler | |
TW200833211A (en) | Circuit board structure with capacitor embedded therein and method for fabricating the same | |
TW200612440A (en) | Polymer-matrix conductive film and method for fabricating the same | |
WO2011112409A3 (en) | Wiring substrate with customization layers | |
WO2008111408A1 (ja) | 多層配線基板及びその製造方法 |