JP5846185B2 - 貫通電極基板及び貫通電極基板を用いた半導体装置 - Google Patents
貫通電極基板及び貫通電極基板を用いた半導体装置 Download PDFInfo
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- JP5846185B2 JP5846185B2 JP2013241392A JP2013241392A JP5846185B2 JP 5846185 B2 JP5846185 B2 JP 5846185B2 JP 2013241392 A JP2013241392 A JP 2013241392A JP 2013241392 A JP2013241392 A JP 2013241392A JP 5846185 B2 JP5846185 B2 JP 5846185B2
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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Description
第1面の第1開口と第2面の第2開口とを貫通する貫通孔を有する基板と、
前記貫通孔内に配置された充填物と、を備え、
前記第2開口は前記第1開口よりも大きく、かつ、前記第1開口と前記第2開口との間に平面視における面積が最も小さい最小開口部が存在し、
前記第2開口と前記最小開口部との間に、断面視において前記貫通孔の側壁の少なくとも一部が、変曲点を有する曲線を含み、
前記第1面及び前記第2面の何れか一方に露出する前記充填物に接触するように配置された気体放出部を有することを特徴とする貫通電極基板が提供される。
また、前記第2開口と前記変曲点との間に平面視における面積が最も大きい最大開口部が存在してもよい。
第1面の第1開口と第2面の第2開口とを貫通し、前記第1開口と前記第2開口との間に前記第1開口より平面視における面積が小さい第1部分並びに前記第1部分及び前記第1開口より平面視における面積が大きい第2部分を有する貫通孔を有する基板と、
前記貫通孔内に配置された充填物と、を備え、
前記第1部分と前記第2部分との間に、断面視において前記貫通孔の側壁の少なくとも一部が、変曲点を有する曲線を含み、
前記第1面及び前記第2面の何れか一方に露出する前記充填物に接触するように配置された気体放出部を有することを特徴とする貫通電極基板が提供される。
また、前記第2開口は、前記第1開口より平面視における面積が大きく、前記第2部分は、前記第2開口より平面視における面積が大きくてもよい。
前記気体放出部の開口が前記第1開口及び前記第2開口と重畳するようにしてもよい。
前記気体放出部の開口が前記第1開口及び前記第2開口と重畳しないようにしてもよい。
前記第2面側の前記気体放出部が前記充填物に接触する面積が、前記第1面側の前記気体放出部が前記充填物に接触する面積よりも大きいようにしてもよい。
第1実施形態に係る本発明の貫通電極基板100の構成について、図1を参照して説明する。図1(A)は、本実施形態に係る本発明の貫通電極基板100を上面から見た平面図である。図1(B)は、図1(A)のA−A’線の断面図である。なお、図1(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板100の一部を示している。
第2実施形態に係る本発明の貫通電極基板200の構成について、図2を参照して説明する。図2(A)は、本実施形態に係る本発明の貫通電極基板200を上面から見た平面図である。図2(B)は、図2(A)のA−A’線の断面図である。なお、図2(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板200の一部を示している。
第3実施形態に係る本発明の貫通電極基板300の構成について、図3を参照して説明する。図3(A)は、本実施形態に係る本発明の貫通電極基板300を上面から見た平面図である。図3(B)は、図3(A)のA−A’線の断面図である。なお、図3(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板300の一部を示している。
第4実施形態に係る本発明の貫通電極基板400の構成について、図4を参照して説明する。図4(A)は、本実施形態に係る本発明の貫通電極基板400を上面から見た平面図である。図4(B)は、図4(A)のA−A’線の断面図である。なお、図4(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板400の一部を示している。
図5(A)は、本実施形態に係る本発明の貫通電極基板100の断面図である。また、図5(B)は、図5(A)における104fの部分の拡大図である。なお、図4(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板100の一部を示している。
第6実施形態に係る本発明の貫通電極基板100の構成について、図6を参照して説明する。図6(A)は、本実施形態に係る本発明の貫通電極基板400を上面から見た平面図である。図6(B)は、図4(A)のA−A’線の断面図である。なお、図6(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板100の一部を示している。
第7実施形態に係る本発明の貫通電極基板100の構成について、図7を参照して説明する。図7(A)は、本実施形態に係る本発明の貫通電極基板100を上面から見た平面図である。図7(B)は、図7(A)のA−A’線の断面図である。なお、図7(A)及び(B)とも、説明の便宜上、本実施形態に係る本発明の貫通電極基板100の一部を示している。
第8実施形態に係る本発明の半導体装置1000の構成について、図12〜14を参照して説明する。本実施形態においては、上述した第1〜第7実施形態における貫通電極基板を用いた半導体装置1000について説明する。
102、202、302、402 基板
104、204、304、404 貫通孔
105、205、305、405 充填物
106、108、206、208、306、308、406、408 絶縁層
207、409 導電膜
307、407 絶縁層
110、112、210、212、310、312、410、412 ビア(開口)
Claims (18)
- 第1面の第1開口と第2面の第2開口とを貫通する貫通孔を有する基板と、
前記貫通孔内に配置された充填物と、を備え、
前記第2開口は前記第1開口よりも大きく、かつ、前記第1開口と前記第2開口との間に平面視における面積が最も小さい最小開口部が存在し、
前記第2開口と前記最小開口部との間に、断面視において前記貫通孔の側壁の少なくとも一部が、変曲点を有する曲線を含み、
前記第1面及び前記第2面の何れか一方に露出する前記充填物に接触するように配置された気体放出部を有することを特徴とする貫通電極基板。 - 前記第2開口と前記変曲点との間に平面視における面積が最も大きい最大開口部が存在することを特徴とする請求項1に記載の貫通電極基板。
- 第1面の第1開口と第2面の第2開口とを貫通し、前記第1開口と前記第2開口との間に前記第1開口より平面視における面積が小さい第1部分並びに前記第1部分及び前記第1開口より平面視における面積が大きい第2部分を有する貫通孔を有する基板と、
前記貫通孔内に配置された充填物と、を備え、
前記第1部分と前記第2部分との間に、断面視において前記貫通孔の側壁の少なくとも一部が、変曲点を有する曲線を含み、
前記第1面及び前記第2面の何れか一方に露出する前記充填物に接触するように配置された気体放出部を有することを特徴とする貫通電極基板。 - 前記第2開口は、前記第1開口より平面視における面積が大きく、
前記第2部分は、前記第2開口より平面視における面積が大きいことを特徴とする請求項3に記載の貫通電極基板。 - 前記気体放出部は、前記貫通孔内の気体を外部に放出させる絶縁性樹脂であることを特徴とする請求項1乃至4のいずれか一に記載の貫通電極基板。
- 前記気体放出部の少なくとも一部は、前記貫通孔の側壁と前記充填物との間にも配置されることを特徴とする請求項1乃至5の何れか一に記載の貫通電極基板。
- 前記気体放出部は開口を有し、前記気体放出部の開口は、前記基板側から離間するにしたがって平面視における面積が大きくなることを特徴とする請求項1乃至6の何れか一に記載の貫通電極基板。
- 前記貫通孔の側壁と前記充填物との間には、導電膜が配置されることを特徴とする請求項1乃至7の何れか一に記載の貫通電極基板。
- 前記貫通孔の側壁と前記充填物との間には、前記貫通孔の側壁側から絶縁膜及び導電膜が順に配置されることを特徴とする請求項1乃至7の何れか一に記載の貫通電極基板。
- 前記導電膜は、前記第1面及び前記第2面上にも配置されることを特徴とする請求項1乃至9の何れか一に記載の貫通電極基板。
- 前記充填物は、導電性材料であることを特徴とする請求項1乃至7の何れか一に記載の貫通電極基板。
- 前記充填物は、絶縁性材料であることを特徴とする請求項1乃至10の何れか一に記載の貫通電極基板。
- 前記基板は、絶縁性を有することを特徴とする請求項1乃至7の何れか一に記載の貫通電極基板。
- 前記基板は、導電性を有することを特徴とする請求項1乃至10の何れか一に記載の貫通電極基板。
- 前記気体放出部は、開口を有し、
前記気体放出部の開口が前記第1開口及び前記第2開口と重畳することを特徴とする請求項1乃至7の何れか一に記載の貫通電極基板。 - 前記気体放出部は、開口を有し、
前記気体放出部の開口が前記第1開口及び前記第2開口と重畳しないことを特徴とする請求項1乃至10の何れか一に記載の貫通電極基板。 - 前記気体放出部は、前記第1面及び前記第2面に配置され、
前記第2面側の前記気体放出部が前記充填物に接触する面積が、前記第1面側の前記気体放出部が前記充填物に接触する面積よりも大きいことを特徴とする請求項1乃至16の何れか一に記載の貫通電極基板。 - LSI基板と、半導体チップと、請求項1乃至17の何れか一項に記載の貫通電極基板とを有することを特徴とする半導体装置。
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