CN105765712B - 贯通电极基板及利用贯通电极基板的半导体装置 - Google Patents
贯通电极基板及利用贯通电极基板的半导体装置 Download PDFInfo
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- CN105765712B CN105765712B CN201480061865.7A CN201480061865A CN105765712B CN 105765712 B CN105765712 B CN 105765712B CN 201480061865 A CN201480061865 A CN 201480061865A CN 105765712 B CN105765712 B CN 105765712B
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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Abstract
本发明提供一种用于解决由滞留于贯通孔内的气体引起的问题,且可防止贯通孔内的填充物脱落的贯通电极基板。贯通电极基板具有:基板,具有将第一面的第一开口和第二面的第二开口贯通的贯通孔;以及填充物,配置于贯通孔内,第二开口大于第一开口,在第一开口与第二开口之间具有俯视时面积最小的最小开口部,上述贯通电极基板具有气体释放部,上述气体释放部配置成与在第一面及第二面的任一个面露出的填充物相接触。
Description
技术领域
本发明涉及具有贯通基板的表面和背面的贯通电极的贯通电极基板,尤其涉及用作用于连接多个器件之间的内插件(interposer)基板的贯通电极基板。另外,本发明涉及利用贯通电极基板的半导体装置。
背景技术
近来,作为大规模集成电路(LSI)芯片之间的内插器,正在开发具有使基板的表面和背面导通的导通部的贯通电极基板。在这种贯通电极基板中,通过在贯通孔内部利用电解镀等来填充导电材料而形成了贯通电极。
具有窄间距、短尺寸布线的LSI芯片配置在贯通电极基板的上部面。另外,在贯通电极基板的下部面,可配置具有宽间距、长尺寸布线的半导体封装基板。贯通电极基板的现有技术有以下的文献。
(现有技术文献)
(专利文献)
专利文献1:日本特开2005-514386
专利文献3:日本特开2003-513037
专利文献4:日本特开2011-528851
专利文献5:WO 2010/087483
专利文献6:WO 2005/034594
专利文献7:WO 2003/007370
专利文献7:WO 2011/024921
专利文献8:日本特许第4241202号
专利文献9:日本特许第4203277号
专利文献10:日本特许第4319831号
专利文献11:日本特许第4022180号
专利文献12:日本特许第4564342号
专利文献13:日本特许第4835141号
专利文献14:日本特许第5119623号
专利文献15:日本特开2009-23341
专利文献16:日本特许第2976955号
专利文献17:日本特开2003-243396
专利文献18:日本特开2003-198069
专利文献19:日本特许第4012375号
发明内容
(发明所要解决的问题)
在贯通电极中,如上所述,作为填充物,在贯通孔内填充导电材料,或者,沿着贯通孔的侧壁形成导电膜,而在贯通孔内的其余部分填充绝缘性树脂作为填充物。在贯通电极中,为了防止填充于贯通孔内的填充物脱落,已知有使贯通孔的内部具有锥度或在贯通孔内部形成有弹坑状的多个凹凸的技术(专利文献3、专利文献4)。
但是,就算根据这种技术想要防止填充物脱落,在填充物与贯通孔的侧壁之间也会发生空隙,而在该处有可能发生气体滞留现象。若在这种状态下对基板进行加热,则在现有技术中,存在滞留的气体膨胀而使贯通孔或填充物破坏等,使填充物脱落的担忧。
于是,本发明鉴于这种问题而提出,提供解决由滞留于贯通孔内的气体引起的问题,且可防止贯通孔内的填充物脱落的贯通电极基板及半导体装置。
(用于解决问题的手段)
根据本发明的一个实施方式,提供一种贯通电极基板,其特征在于,具有:基板,具有将第一面的第一开口和第二面的第二开口贯通的贯通孔;以及填充物,配置于上述贯通孔内,上述第二开口大于上述第一开口,在上述第一开口与上述第二开口之间具有俯视时面积最小的最小开口部,上述贯通电极基板具有气体释放部,上述气体释放部配置成与在上述第一面及上述第二面的任一个面露出的上述填充物相接触。
另外,根据本发明的一个实施方式,提供一种贯通电极基板,其特征在于,具有:基板,具有将第一面的第一开口和第二面的第二开口贯通的贯通孔,上述贯通孔在上述第一开口与上述第二开口之间具有第一部分及第二部分,与上述第一部分及上述第一开口相比,上述第二部分的俯视时的面积大;以及填充物,配置于上述贯通孔内,上述贯通电极基板具有气体释放部,上述气体释放部配置成与在上述第一面及上述第二面的任一个面露出的上述填充物相接触。
另外,剖视时上述贯通孔的侧壁的至少一部分可包括具有变曲点的曲线。
上述气体释放部可以为用于使上述贯通孔内的气体向外部释放的绝缘性树脂。
上述气体释放部的至少一部分还可配置在上述贯通孔的侧壁与上述填充物之间。
上述气体释放部可具有开口,上述气体释放部的开口的俯视时的面积可随着从上述基板侧离开而变大。
在上述贯通孔的侧壁与上述填充物之间可配置有导电膜。
在上述贯通孔的侧壁与上述填充物之间,从上述贯通孔的侧壁侧起,可依次配置有绝缘膜及导电膜。
上述导电膜还可配置在上述第一面及上述第二面上。
上述填充物可以为导电性材料。
上述填充物可以为绝缘性材料。
上述基板可具有绝缘性。
上述基板可具有导电性。
上述气体释放部可具有开口,上述气体释放部的开口可与上述第一开口及上述第二开口相重叠。
上述气体释放部可具有开口,上述气体释放部的开口可不与上述第一开口及上述第二开口相重叠。
上述气体释放部可配置于上述第一面及上述第二面,上述第二面侧的上述气体释放部与上述填充物相接触的面积可大于上述第一面侧的上述气体释放部与上述填充物相接触的面积。
另外,根据本发明的一个实施方式,提供一种半导体装置,具有:LSI基板;半导体芯片;以及本发明的贯通电极基板。
(发明的效果)
根据本发明,可提供一种解决由滞留于贯通孔内的气体引起的问题,可防止贯通孔内的填充物脱落,且可靠性高的贯通电极基板及半导体装置。
附图说明
图1为示出第一实施方式的本发明的贯通电极基板100的结构的图。
图2为示出第二实施方式的本发明的贯通电极基板200的结构的图。
图3为示出第三实施方式的本发明的贯通电极基板300的结构的图。
图4为示出第四实施方式的本发明的贯通电极基板400的结构的图。
图5为示出第五实施方式的本发明的贯通电极基板100的结构的图。
图6为示出第六实施方式的本发明的贯通电极基板100的结构的图。
图7为示出第七实施方式的本发明的贯通电极基板100的结构的图。
图8示出第七实施方式的本发明的贯通电极基板100中填充物105上的开口(通路)110的对位错开的例子。
图9为示出第七实施方式的本发明的贯通电极基板200的结构的图。
图10为示出第七实施方式的本发明的贯通电极基板300的结构的图。
图11为示出第七实施方式的本发明的贯通电极基板400的结构的图。
图12为示出第八实施方式的本发明半导体装置1000的结构的图。
图13为示出第八实施方式的本发明半导体装置1000的结构的图。
图14为示出第八实施方式的本发明半导体装置1000的结构的图。
具体实施方式
以下,参照附图详细说明本发明的贯通电极基板。此外,本发明的贯通电极基板不局限于以下的实施方式,可进行各种变形。在所有的实施方式中,对于相同的结构要素,标注相同的附图标记来进行说明。
(第一实施方式)
参照图1,对第一实施方式的本发明的贯通电极基板100的结构进行说明。图1的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板100的俯视图。图1的(B)部分为图1的(A)部分的A-A’线的剖视图。此外,为了便于说明,图1的(A)部分及图1的(B)部分都示出了本实施方式的本发明的贯通电极基板100的一部分。
本实施方式的本发明的贯通电极基板100具有基板102、贯通孔104、填充物105、绝缘层106、108以及通路(via)110、112。此外,还可在基板102的第一面102a及第二面102b侧进一步分别搭载布线结构体、电子部件等。
在本实施方式中,基板102具有绝缘性,例如,可使用玻璃、蓝宝石、树脂等。基板102的厚度没有特别的限制,例如可在10μm~1mm的范围内进行适当的设定。
贯通孔104贯通第一开口104a及第二开口104b,上述第一开口104a配置于基板102的第一面102a,上述第二开口104b配置于作为与第一面102a相反的一侧的面的第二面102b。贯通孔104的形状从第一开口104a朝着第二开口104b发生变化而不是固定不变的。换句话说,贯通孔104的侧壁的形状从第一开口104a朝向第二开口104b是变化的而不是固定不变的。典型地,贯通孔104中,第二开口104b大于第一开口104a,在第一开口104a与第二开口104b之间存在收窄(收窄部)。更具体地,贯通孔104具有:最小开口部104c,俯视时(即从上部面观察时)具有最小面积M;变曲点(拐点,转变点)104d,剖视时(即在A-A’截面观察时),贯通孔104的侧壁根据曲线(具有变曲点104d的曲线)而变化;以及最大开口部104e,俯视时(即从上部面观察时)具有最大面积L。在本实施方式中,贯通孔104的变曲点104d配置为与贯通孔104的中心相比更靠第二开口104b,但并不限于此,贯通孔104的变曲点104d也可配置为与贯通孔104的中心相比更靠第一开口104a。此外,贯通孔104可通过对基板102进行刻蚀加工、激光加工、喷砂加工等来形成。贯通孔104的大小没有特别的限制,但在实现窄间距化方面优选为使最大开口部104e的大小为200μm以下。
在贯通孔104的内部配置有填充物105。在本实施方式中,填充物105为具有导电性的材料,例如,可使用Cu等金属的析出物、包含Cu等的导电性糊剂、导电性树脂等的导电性材料。在使用Cu等作为金属填充物105的情况下,使用电解镀填充法。在使用具有流动性的导电性糊剂或导电性树脂材料作为填充物105的情况下,可使用刮刀或刮板等在贯通孔104填充导电性糊剂或导电性树脂,之后,通过进行热处理等来形成填充物105。
在基板102的第一面102a上及第二面102b上直接或隔着中间层(未图示)分别配置有绝缘层106、108。绝缘层106、108例如由聚酰亚胺、苯并环丁烯等的绝缘性树脂材料形成,只要是具有气体释放功能的绝缘物即可。绝缘层106、108起到使在贯通孔104内产生并放出的气体向外部释放(透气)的气体释放部的作用。绝缘层(气体释放部)106、108中的至少一方配置成与在基板102的第一面102a及第二面102b露出的填充物105相接触。另外,在贯通孔104的侧壁与填充物105之间存在空隙的情况下,可将绝缘层(气体释放部)106、108的一部分配置于贯通孔104的侧壁与填充物105之间,即,可使绝缘层106、108进入贯通孔104的侧壁与填充物105之间。绝缘层106、108例如可使用感光性的绝缘性材料,通过光刻形成所需的图案而成。
在本实施方式的本发明的贯通电极基板100中,如上所述,贯通孔104具有最小开口部104c、变曲点104d及最大开口部104e。另外,在上述贯通孔104中填充有填充物105。在图1所示的情况下,贯通孔104的在第二面102b侧的部分与贯通孔104的在第一面102a侧的部分相比,填充物105的存在量更多,由此,所放出的气体的量也多。可使第二面102b侧的气体释放部108与填充物105相接触的面积大于第一面102a侧的气体释放部106与填充物105相接触的面积,使来自第二面侧的气体释放部108的气体的释放量变多。进而,第二开口104b大于第一开口104a,因而可通过使通路110与通路112的直径大致相同,而简便地获得上述的接触面积的关系。
作为开口的通路110、112分别为形成于绝缘层(气体释放部)106、108的孔。虽然为了便于说明而未图示,但可通过镀覆或溅射而针对通路110、112形成布线。这些布线与配置于贯通孔104内的填充物105相接触,这些布线之间导通。如图1的(B)部分所示,绝缘层(气体释放部)106、108的开口即通路110、112形成为分别与基板102的第一开口及第二开口相重叠。换句话说,绝缘层(气体释放部)106、108的开口即通路110、112分别配置于基板102的第一开口及第二开口的正上方。另外,可以形成为,绝缘层(气体释放部)106、108的开口即通路110和/或112的一部分分别与基板102的第一开口104a及第二开口104b相重叠。
在本实施方式的本发明的贯通电极基板100中,如上所述,贯通孔104具有最小开口部104c、变曲点104d及最大开口部104e。另外,在上述贯通孔104中填充有填充物105。通过使第一开口104a与第二开口104b在大小方面具有差异,可确保填充物的填充性。另外,在对填充物105朝向第一面102a的方向施加力的情况下,通过具有变曲点104d,可防止填充物105从基板102脱落。另外,在对填充物105朝向第二面102b的方向施加力的情况下,通过具有最小开口部104c,可防止填充物105从基板102脱落。此外,在本实施方式的贯通电极基板100中,可具有最小开口部104c及最大开口部104e的双方或仅具有最小开口部104c及最大开口部104e中的任一方。由此,在本实施方式的本发明的贯通电极基板100中,可确保填充物105的填充性,并且,可防止填充物105向上下任一方向脱落。
另外,在本实施方式的本发明的贯通电极基板100中,如上所述,绝缘层(气体释放部)106、108中的至少一方配置成与在基板102的第一面102a及第二面102b露出的填充物105相接触。由此,可提供一种绝缘层(气体释放部)106和/或108可使在上述贯通孔104内产生并放出的气体向外部释放,可解决由滞留于贯通孔104内的气体引起的问题,可防止贯通孔104内的填充物105脱落,且可靠性高的贯通电极基板。
此外,在贯通孔104的侧壁与填充物105之间优选为无空间,但在贯通孔104的侧壁与填充物105之间有时也会产生一些空间或间隙。即使产生这种空间或间隙,在本实施方式的本发明的贯通电极基板100中,也可实现防止填充物105的脱落。
(第二实施方式)
参照图2,对第二实施方式的本发明的贯通电极基板200的结构进行说明。图2的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板200的俯视图。图2的(B)部分为图2的(A)部分的A-A’线的剖视图。此外,为了便于说明,图2的(A)部分及图2的(B)部分都示出了本实施方式的本发明的贯通电极基板200的一部分。
本实施方式的本发明的贯通电极基板200具有基板202、贯通孔204、填充物205、绝缘层206、208、导电膜207、通路210、212。此外,在基板202的第一面202a及第二面202b侧可分别进一步搭载有布线结构体、电子部件等。
在本实施方式中,基板202具有绝缘性,例如可使用玻璃、蓝宝石、树脂等。基板202的厚度没有特别的限制,例如可在10μm~1mm的范围内进行适当的设定。
贯通孔204为使第一开口204a及第二开口204b贯通的贯通孔,上述第一开口204a配置于基板202的第一面,上述第二开口204b配置于作为与第一面202a相反一侧的面的第二面202b。与上述的第一实施方式同样地,贯通孔204的形状随着从第一开口204a朝向第二开口204b发生变化而不是固定不变的。换句话说,贯通孔204侧壁的形状是从第一开口204a朝向第二开口204b变化的而不是固定不变的。典型地,贯通孔204中,第二开口204b大于第一开口204a,在第一开口204a与第二开口204b之间存在收窄(收窄部)。更具体地,贯通孔204具有:最小开口部204c,俯视时(即从上部面观察时)具有最小面积M;变曲点204d,剖视时(即在A-A’截面观察时),贯通孔204的侧壁根据曲线(具有变曲点204d的曲线)而变化;以及最大开口部204e,俯视时(即从上部面观察时)具有最大面积L。在本实施方式中,贯通孔204的变曲点204d配置为与贯通孔204的中心相比更靠第二开口204b,但并不局限于此,贯通孔204的变曲点204d也可配置为与贯通孔204的中心相比更靠第一开口204a。此外,贯通孔204可通过对基板202进行刻蚀加工、激光加工、喷砂加工等来形成。贯通孔204的大小没有特别的限制,但在实现窄间距化方面优选为使最大开口部204e的大小为200μm以下。
在贯通孔204的内部配置有导电膜207及填充物205。导电膜207配置于贯通孔204的侧壁侧,导电膜207的一部分配置于基板202的第一面202a及第二面202b的上部。在本实施方式中,填充物205为具有绝缘性的材料,例如可使用聚酰亚胺、苯并环丁烯等有机材料或氧化硅或氮化硅等无机材料。导电膜207例如可通过镀覆法、化学气相沉积(CVD)法等方法来形成。填充物205例如可通过吸入、推入等方法来形成。
在基板202的第一面202a上及第二面202b上直接或隔着中间层(未图示)分别配置有绝缘层206、208。绝缘层206、208由聚酰亚胺、苯并环丁烯等的绝缘性树脂材料形成,只要是具有气体释放功能的绝缘物即可。绝缘层206、208起到用于使在贯通孔204内产生并放出的气体向外部释放(透气)的气体释放部的作用。在本实施方式中,绝缘层(气体释放部)206、208配置成将在基板202的第一面202a及第二面202b露出的填充物205覆盖并与之相接触。也可将绝缘层(气体释放部)206、208中的至少一方配置成与在基板202的第一面202a及第二面202b露出的填充物205相接触。另外,在贯通孔204的侧壁与填充物205之间存在空隙的情况下,可将绝缘层(气体释放部)206、208的一部分配置于贯通孔204的侧壁与填充物205之间,即,可使绝缘层206、208进入贯通孔204的侧壁与填充物205之间。绝缘层206、208例如可使用感光性的绝缘性材料,通过光刻形成所需的图案而成。
在本实施方式的本发明的贯通电极基板200中,如上所述,贯通孔204具有最小开口部204c、变曲点204d及最大开口部204e。另外,在上述贯通孔204中填充有填充物205。在图2所示的情况下,贯通孔204的在第二面102b侧的部分与贯通孔204的在第一面202a侧的部分相比,填充物205的存在量更多,所放出的气体的量也多。由此,可使第二面202b侧的气体释放部208与填充物205相接触的面积大于第一面侧的气体释放部206与填充物205相接触的面积,使来自第二面侧的气体释放部208的气体的释放量变多。
作为开口的通路210、212分别为在第一面202a上及第二面202b上的导电膜207上的绝缘层(气体释放部)206、208中形成的孔。虽然为了便于说明而未图示,但可通过镀覆或溅射而针对通路210、212形成布线。这些布线与第一面202a上及第二面202b上的导电膜207相接触,这些布线之间相导通。另外,可形成为,使绝缘层(气体释放部)206、208的开口即通路210和/或212的一部分分别与基板202的第一开口204a及第二开口204b相重叠。
在本实施方式的本发明的贯通电极基板200中,如上所述,贯通孔204具有最小开口部204c、变曲点204d及最大开口部204e。另外,在上述贯通孔204中填充有填充物205。通过使第一开口204a与第二开口204b在大小方面具有差异,可确保填充物的填充性。另外,在对填充物205朝向第一面202a的方向施加力的情况下,通过具有变曲点204d,可防止填充物205从基板202脱落。另外,在对填充物205朝向第二面202b的方向施加力的情况下,通过具有最小开口部204c,可防止填充物205从基板202脱落。此外,在本实施方式的贯通电极基板200中,可具有最小开口部204c及最大开口部204e的双方或仅具有任何一方。由此,在本实施方式的本发明的贯通电极基板200中,可确保填充物205的填充性,并且,可防止填充物205向上下任一方向脱落。
另外,在本实施方式的本发明的贯通电极基板200中,如上所述,绝缘层(气体释放部)206、208中的至少一方配置成与在基板202的第一面202a及第二面202b露出的填充物205相接触。由此,可提供一种绝缘层(气体释放部)206和/或208可使在上述贯通孔204内产生并放出的气体向外部释放,解决由滞留于贯通孔204内的气体引起的问题,可防止贯通孔204内的填充物205脱落,且可靠性高的贯通电极基板。
此外,在配置于贯通孔204的侧壁侧的导电膜207与填充物205之间优选为无空间,但在导电膜207与填充物205之间有时也会产生一些空间或间隙。即使产生这种空间或间隙,在本实施方式的本发明的贯通电极基板200中,也可实现防止填充物205的脱落。
(第三实施方式)
参照图3,对第三实施方式的本发明的贯通电极基板300的结构进行说明。图3的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板300的俯视图。图3的(B)部分为图3的(A)部分的A-A’线的剖视图。此外,为了便于说明,图3的(A)部分及图3的(B)部分均示出了本实施方式的本发明的贯通电极基板300的一部分。
本实施方式的本发明的贯通电极基板300具有基板302、贯通孔304、填充物305、绝缘层306、308、绝缘层307、通路310、312。此外,在基板302的第一面302a及第二面302b侧还可分别进一步搭载布线结构体、电子部件等。
在本实施方式中,基板302具有导电性,例如,可使用硅等半导体或不锈钢等金属等。基板302的厚度没有特别的限制,例如可在10μm~1mm的范围内进行适当的设定。
与上述的第一实施方式及第二实施方式同样地,贯通孔304是使第一开口304a及第二开口304b贯通的贯通孔,上述第一开口304a配置于基板302的第一面302a,上述第二开口304b配置于作为与第一面302a相反一侧的面的第二面302b。贯通孔304的形状随着从第一开口304a朝向第二开口304b发生变化而不是固定不变的。换句话说,贯通孔304的侧壁的形状从第一开口304a朝向第二开口304b是变化的而不是固定不变的。典型地,贯通孔304中,第二开口304b大于第一开口304a,在第一开口304a与第二开口304b之间存在收窄(收窄部)。更具体地,贯通孔304具有:最小开口部304c,俯视时(即从上部面观察时)具有最小面积M;变曲点304d,剖视时(即在A-A’截面观察时),贯通孔304的侧壁根据曲线(具有变曲点304d的曲线)而变化;以及最大开口部304e,俯视时(即从上部面观察时)具有最大面积L。在本实施方式中,贯通孔304的变曲点304d配置为与贯通孔304的中心相比更靠第二开口304b,但并不限于此,贯通孔304的变曲点304d也可配置为与贯通孔304的中心相比更靠第一开口304a。此外,贯通孔304可通过对基板302进行刻蚀加工、激光加工、喷砂加工等来形成。贯通孔304的大小没有特别的限制,但在实现窄间距化方面优选使最大开口部304e的大小为200μm以下。
在贯通孔304的内部配置有绝缘层307及填充物305。绝缘层307配置于贯通孔304的侧壁侧,绝缘层307的一部分配置于基板302的第一面及第二面的上部。在本实施方式中,填充物305为具有导电性的材料,例如可使用Cu等金属的析出物、包含Cu等的导电性糊剂、导电性树脂等的导电性材料。在使用Cu等金属作为填充物305的情况下,可使用电解镀填充法。在使用具有流动性的导电性糊剂或导电性树脂材料作为填充物305的情况下,可使用刮刀或刮板等在贯通孔304中填充导电性糊剂或导电性树脂,之后,通过进行热处理等来形成填充物305。
在基板302的第一面302a上及第二面302b上直接或隔着中间层(未图示)分别配置有绝缘层306、308。绝缘层306、308例如由聚酰亚胺、苯并环丁烯等的绝缘性树脂材料形成,只要是具有气体释放功能的绝缘物即可。绝缘层306、308起到用于使在贯通孔304内产生并放出的气体向外部释放(透气)的气体释放部的作用。绝缘层(气体释放部)306、308的至少一方配置成与在基板302的第一面及第二面露出的填充物305相接触。另外,在贯通孔304的侧壁与填充物305之间存在空隙的情况下,可将绝缘层(气体释放部)306、308的一部分配置于贯通孔304的侧壁与填充物305之间,即,可使绝缘层306、308进入贯通孔304的侧壁与填充物305之间。绝缘层306、308例如可使用感光性的绝缘性材料,通过光刻形成所需的图案而成。
在本实施方式的本发明的贯通电极基板300中,如上所述,贯通孔304具有最小开口部304c、变曲点304d及最大开口部304e。另外,在上述贯通孔304中填充有填充物305。在图3所示的情况下,贯通孔304的在第二面302b侧的部分与贯通孔304的在第一面302a侧的部分相比,填充物305的存在量更多,由此,所放出的气体的量也多。由此,可使第二面侧的气体释放部308与填充物305相接触的面积大于第一面302a侧的气体释放部306与填充物305相接触的面积,来使来自第二面302b侧的气体释放部308的气体的释放量变多。进而,第二开口304b大于第一开口304a,因而可通过使通路310与通路312的直径大致相同,来简便地获得上述的接触面积的关系。
作为开口的通路310、312分别为形成于绝缘层(气体释放部)306、308的孔。虽然为了便于说明而未图示,但可通过镀覆或溅射针对通路310、312形成布线。这些布线与配置于贯通孔304内的填充物305相接触,这些布线之间相导通。如图3的(B)部分所示,绝缘层(气体释放部)306、308的开口即通路310、312形成为分别与基板302的第一开口304a及第二开口304b相重叠。换句话说,绝缘层(气体释放部)306、308的开口即通路310、312分别配置于基板302的第一开口304a及第二开口304b的正上方。另外,可以形成为,绝缘层(气体释放部)306、308的开口即通路310和/或312的一部分分别与基板302的第一开口304a及第二开口304b相重叠。
在本实施方式的本发明的贯通电极基板300中,如上所述,贯通孔304具有最小开口部304c、变曲点304d及最大开口部304e。另外,在上述贯通孔304中填充有填充物305。通过使第一开口304a与第二开口304b在大小方面存在差异,可确保填充物的填充性。另外,在对填充物305朝向第一面302a的方向施加力的情况下,通过具有变曲点304d,可防止填充物305从基板302脱落。另外,在对填充物305朝向第二面302b的方向施加力的情况下,通过具有最小开口部304c,可防止填充物305从基板302脱落。此外,在本实施方式的贯通电极基板300中,可具有最小开口部304c及最大开口部304e的双方或仅具有任一方。由此,在本实施方式的本发明的贯通电极基板300中,可确保填充物305的填充性,并且,可防止填充物305从上下任意方向脱落。
另外,在本实施方式的本发明的贯通电极基板300中,如上所述,绝缘层(气体释放部)306、308的至少一方配置成与在基板302的第一面302a及第二面302b露出的填充物305相接触。由此,可提供一种绝缘层(气体释放部)306和/或308可使在上述贯通孔304内产生并放出的气体向外部释放,可解决由积存于贯通孔304内的气体引起的问题,可防止贯通孔304内的填充物305脱落,且可靠性高的贯通电极基板。
此外,在配置于贯通孔304的侧壁的绝缘层307与填充物305之间优选为无空间,但在绝缘层307与填充物305之间有时也会产生一些空间或间隙。即使在产生这种空间或间隙的情况下,在本实施方式的本发明的贯通电极基板300中,也可实现防止填充物305脱落。
(第四实施方式)
参照图4,对第四实施方式的本发明的贯通电极基板400的结构进行说明。图4的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板400的俯视图。图4的(B)部分为图4的(A)部分的A-A’线的剖视图。此外,为了便于说明,图4的(A)部分及图4的(B)部分都示出了本实施方式的本发明的贯通电极基板400的一部分。
本实施方式的本发明的贯通电极基板400具有基板402、贯通孔404、填充物405、绝缘层406、408、绝缘层407、导电膜409、通路410、412。此外,在基板402的第一面402a及第二面402b侧还可分别搭载有布线结构体、电子部件等。
在本实施方式中,基板402具有导电性,例如可使用硅等半导体或不锈钢等金属等。基板402的厚度没有特别的限制,例如可在10μm~1mm的范围内进行适当的设定。
贯通孔404是使第一开口404a及第二开口404b贯通的贯通孔,上述第一开口404a配置于基板402的第一面402a,上述第二开口404b配置于作为与第一面402a相反一侧的面的第二面402b。与上述的第一实施方式及第三实施方式同样地,贯通孔404的形状从第一开口404a朝向第二开口404b发生变化而不是固定不变的。换句话说,贯通孔404的侧壁的形状从第一开口404a朝向第二开口404b是变化的而不是固定不变的。典型地,贯通孔404中,第二开口404b大于第一开口404a,在第一开口404a与第二开口404b之间具有收窄(收窄部)。更具体地,贯通孔404具有:最小开口部404c,俯视时(即从上部面观察时)具有最小面积M;变曲点404d,剖视时(即在A-A’截面观察时),贯通孔404的侧壁根据曲线(具有变曲点404d的曲线)而变化;以及最大开口部404e,俯视时(即从上部面观察时)具有最大面积L。在本实施方式中,贯通孔404的变曲点404d配置为与贯通孔404的中心相比更靠第二开口404b,但并不限于此,贯通孔404的变曲点404d也可配置为与贯通孔404的中心相比更靠第一开口404a。此外,贯通孔404可通过对基板402进行刻蚀加工、激光加工、喷砂加工等来形成。贯通孔404的大小没有特别的限制,但在实现窄间距化方面优选的是使最大开口部404e的大小为200μm以下。
在贯通孔404的内部配置有绝缘层407、导电膜409及填充物405。绝缘层407配置于贯通孔404的侧壁侧,绝缘层407的一部分配置于基板402的第一面及第二面的上部。导电膜409配置于贯通孔404的绝缘层407侧,导电膜409的一部分配置于基板402的第一面及第二面的上部。在本实施方式中,填充物405可为具有绝缘性的材料,例如,可使用聚酰亚胺、苯并环丁烯等有机材料或氧化硅或氮化硅等无机材料。导电膜409例如可通过镀覆法、CVD法等方法来形成。填充物405例如可通过吸入、推入等方法来形成。
在基板402的第一面402a上及第二面402b上直接或隔着中间层(未图示)分别配置有绝缘层406、408。绝缘层406、408由聚酰亚胺等的绝缘性树脂材料形成,只要是具有气体释放功能的绝缘物即可。绝缘层406、408起到用于使在贯通孔404内产生并放出的气体向外部释放(透气)的气体释放部的作用。在本实施方式中,绝缘层(气体释放部)406、408配置成覆盖在基板202的第一面及第二面露出的填充物405并与之相接触。可配置为,绝缘层(气体释放部)406、408的至少一方与在基板402的第一面402a及第二面402b露出的填充物405相接触。另外,在贯通孔404的侧壁与填充物405之间存在空隙的情况下,可将绝缘层(气体释放部)406、408的一部分配置于贯通孔404的侧壁和/或绝缘层407与填充物405之间,即,可使绝缘层406、408进入贯通孔404的侧壁与填充物405之间。绝缘层406、408例如可使用感光性的绝缘性材料,通过光刻形成所需的图案而成。
在本实施方式的本发明的贯通电极基板400中,如上所述,贯通孔404具有最小开口部404c、变曲点404d及最大开口部404e。另外,在上述贯通孔404中填充有填充物405。在图4所示的情况下,贯通孔404的在第二面402b侧的部分与贯通孔404的在第一面402a侧的部分相比,填充物405的存在量更多,所放出的气体的量也多。由此,可使第二面侧的气体释放部408与填充物405相接触的面积大于第一面402a侧的气体释放部406与填充物405相接触的面积,使来自第二面402b侧的气体释放部408的气体的释放量变多。进而,第二开口404b大于第一开口404a,因而可通过使通路410与通路412的直径大致相同,来简便地获得上述的接触面积的关系。
作为开口的通路410、412分别为在第一面上及第二面上的导电膜409上的绝缘层(气体释放部)406、408中形成的孔。虽然为了便于说明而未图示,但可通过镀覆或溅射而针对通路410、412形成布线。这些布线与第一面402a上及第二面402b上的导电膜409相接触,这些布线之间相导通。另外,可使绝缘层(气体释放部)406、408的开口即通路410和/或412的一部分分别与基板402的第一开口404a及第二开口404b相重叠。
在本实施方式的本发明的贯通电极基板400中,如上所述,贯通孔404具有最小开口部404c、变曲点404d及最大开口部404e。另外,在上述贯通孔404中填充有填充物405。通过使第一开口404a与第二开口404b在大小方面具有差异,可确保填充物的填充性。另外,在对填充物405朝向第一面402a的方向施加力的情况下,通过具有变曲点404d,可防止填充物405从基板400脱落。另外,在对填充物405朝向第二面的方向施加力的情况下,通过具有最小开口部404c,可防止填充物405从基板400脱落。此外,在本实施方式的贯通电极基板400中,可具有最小开口部404c及最大开口部404e的双方或仅具有任一方。由此,在本实施方式的本发明的贯通电极基板400中,可确保填充物405的填充性,并且,可防止填充物405从上下任意方向脱落。
另外,在本实施方式的本发明的贯通电极基板400中,如上所述,可配置为,绝缘层(气体释放部)406、408的至少一方与在基板402的第一面402a及第二面402b露出的填充物405相接触。由此,可提供一种绝缘层(气体释放部)406和/或408可使在上述贯通孔404内产生并放出的气体向外部释放,可解决由积存于贯通孔404内的气体引起的问题,可防止贯通孔404内的填充物405脱落,且可靠性高的贯通电极基板。
此外,在配置于贯通孔404的导电膜409与填充物405之间优选为无空间,但在导电膜409与填充物405之间有时也会产生一些空间或间隙。即使在产生这种空间或间隙的情况下,在本实施方式的本发明的贯通电极基板400中,也可实现防止填充物405脱落。
(第五实施方式)
图5的(A)部分为本实施方式的本发明的贯通电极基板100的剖视图。另外,图5的(B)部分为图5的(A)部分中104f的部分的放大图。此外,为了便于说明,图5的(A)部分及图5的(B)部分都示出了本实施方式的本发明的贯通电极基板100的一部分。
就本实施方式的本发明的贯通电极基板100而言,在第一实施方式的本发明的贯通电极基板100中,如图5的(A)部分所示,贯通孔104的第一开口104a的与第一面的连接部分104f具有曲面。另外,贯通孔104的第二开口104b的与第二面的连接部分104g具有曲面。对于其他结构,与第一实施方式相同,因而省略说明。
在本实施方式的本发明的贯通电极基板100中,贯通孔104的连接部分104f、104g分别具有曲面,因而可容易地填充填充物405。
另外,在上述的其他第二实施方式至第四实施方式中,也可通过使贯通孔的第一开口的与第一面的连接部分具有曲面,并且,使贯通孔的第二开口的与第二面的连接部分具有曲面,而采用与本实施方式相同的结构。
(第六实施方式)
参照图6,对第六实施方式的本发明的贯通电极基板100的结构进行说明。图6的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板100的俯视图。图6的(B)部分为图4的(A)部分的A-A’线的剖视图。此外,为了便于说明,图6的(A)部分及图6的(B)部分都示出了本实施方式的本发明的贯通电极基板100的一部分。
关于本实施方式的本发明的贯通电极基板100,在第一实施方式的本发明的贯通电极基板100中,如图5的(A)部分所示,贯通孔104的变曲点104d配置为与贯通孔104的中心相比更靠第一开口104a。对于其他结构,与第一实施方式相同,因而省略说明。
另外,在上述其他的第二实施方式至第五实施方式中,也可通过将贯通孔的变曲点配置为与贯通孔的中心相比更靠第一开口,而采用与本实施方式相同的结构。
(第七实施方式)
参照图7,对第七实施方式的本发明的贯通电极基板100的结构进行说明。图7的(A)部分为从上部面观察本实施方式的本发明的贯通电极基板100的俯视图。图7的(B)部分为图7的(A)部分的A-A’线的剖视图。此外,为了便于说明,图7的(A)部分及图7的(B)部分都示出了本实施方式的本发明的贯通电极基板100的一部分。
就本实施方式的本发明的贯通电极基板100而言,在第一实施方式的本发明的贯通电极基板100中,如图7的(A)部分所示,气体释放部106、108的开口(通路)110、112设置成,俯视时(即从上部面观察时)的面积随着从基板102侧离开而变大。换句话说,在剖视时(即在A-A’截面观察时),气体释放部106、108和填充物105所成的角度α具有约45度~约89度的角度。其他结构与第一实施方式相同,因而省略说明。绝缘层106、108例如可使用感光性的绝缘性材料,通过光刻形成所需的图案而成,但通过调节上述曝光条件,气体释放部106、108的开口(通路)110、112可形成为,俯视时的面积随着从基板102侧离开而变大。
在本实施方式的本发明的贯通电极基板100中,通过具有上述的结构,可防止配置于开口(通路)的布线的台阶断线。
另外,图8的(A)及图8的(B)部分示出本实施方式的本发明的贯通电极基板100的简要俯视图。在本实施方式中,气体释放部106、108的开口(通路)110、112的俯视时(即从上部面观察)的面积随着从基板102侧离开而变大,可使填充物105上的开口(通路)110、112的面积变小,可确保开口(通路)110、112与填充物105的接触,因而可减小由形成开口(通路)110、112时的对位错开所引起的接触不良的可能性。
例如,图8的(A)部分示出填充物105上的开口(通路)110向右侧错开的情况。另外,图8的(B)部分示出填充物105上的开口(通路)110向右侧错开,开口(通路)110的一部分从填充物105上脱离的情况。在图8的(A)部分及图8的(B)部分所示的情况下,也可确保开口(通路)110、112与填充物105的接触,因而可减小由开口(通路)110、112的对位错开而引起的接触不良的可能性。
另外,在上述其他的第二实施方式至第四实施方式中,也如图9至图11所示,可采用与本实施方式相同的结构。以下进行说明。
关于本实施方式的本发明的贯通电极基板200,在第二实施方式的本发明的贯通电极基板200中,如图9的(A)部分所示,气体释放部206、208的开口(通路)210、212的俯视时(即从上部面观察时)的面积随着从基板202侧离而变大。换句话说,剖视时(即在A-A’截面观察时),气体释放部206、208和填充物205所成的角度α具有约45度~约89度的角度。其他结构与第二实施方式相同,因而省略说明。
关于本实施方式的本发明的贯通电极基板300,在第三实施方式的本发明的贯通电极基板300中,如图10的(A)部分所示,气体释放部306、308的开口(通路)310、312的俯视时(即从上部面观察时)的面积随着从基板302侧离开而变大。换句话说,剖视时(即在A-A’截面观察时),气体释放部306、308和填充物305所成的角度α具有约45度~约89度的角度。其他结构与第三实施方式相同,因而省略说明。
关于本实施方式的本发明的贯通电极基板400,在第四实施方式的本发明的贯通电极基板400中,如图11的(A)部分所示,气体释放部406、408的开口(通路)410、412的俯视时(即从上部面观察时)的面积随着从基板402侧离开而变大。换句话说,剖视时(即在A-A’截面观察时),气体释放部406、408和填充物405所成的角度α具有约45度~约89度的角度。其他结构与第四实施方式相同,因而省略说明。
如上所述,在本实施方式的任一结构中,均可减小填充物上的开口(通路)的面积,可确保开口(通路)与填充物的接触,因而可减小由形成开口(通路)时的对位错开所引起的接触不良的可能性。
(第八实施方式)
参照图12至图14,对第八实施方式的本发明的半导体装置1000的结构进行说明。在本实施方式中,对利用上述的第一实施方式至第七实施方式的贯通电极基板的半导体装置1000进行说明。
图12为示出本实施方式的半导体装置1000的图。半导体装置1000中,3个本发明的贯通电极基板100层叠起来,且与LSI基板(半导体基板)500相连接。在LSI基板500中设置有布线层502。在贯通电极基板100上例如配置有动态随机存取存储器(DRAM)等半导体器件。在贯通电极基板100中设置有布线层120。如图12所示,LSI基板500的布线层502和贯通电极基板100的布线层120经由凸块(bump)1002相连接。凸块1002例如可使用铟、铜、金等金属。另外,如图12所示,贯通电极基板100的布线层120与另一个贯通电极基板100的布线层120经由凸块1002相连接。
此外,在层叠贯通电极基板100的情况下,并不局限于3层,也可以为2层,或者,也可以为4层以上。另外,贯通电极基板100和另一个基板不限于凸块连接,也可使用共晶接合等其他接合技术。另外,可将聚酰亚胺、环氧树脂等进行涂敷、烧成,将贯通电极基板100与另一个基板进行粘接。
图13为示出本实施方式的本发明的半导体装置1000的另一例的图。图13所示的半导体装置1000中,微机电系统(MEMS)器件、中央处理单元(CPU)、存储器、集成电路(IC)等的半导体芯片(LSI芯片)600、602、以及贯通电极基板100层叠起来,并与LSI基板500相连接。
在半导体芯片6000与半导体芯片602之间配置有贯通电极基板100,二者借助于凸块1002相连接。在LSI基板500上载置有半导体芯片600,LSI基板500和半导体芯片602借助于金属丝604相连接。在该例中,贯通电极基板100可用作将多个半导体芯片层叠来进行三维封装所用的内插件(interposer),可通过将功能各自不同的多个半导体芯片进行层叠,而可作为多功能的半导体装置。例如,可通过使半导体芯片600为三轴加速度传感器,使半导体芯片602为二轴磁传感器,而实现由1个模块而实现5轴运动传感器的半导体装置。
在半导体芯片为由MEMS器件形成的传感器等的情况下,感测结果可利用模拟信号输出。在这种情况下,低通滤波器、放大器等也可形成于半导体芯片600、602或贯通电极基板100。
图14为示出本实施方式的半导体装置1000的另一例的图。上述的2个例子(图12、图13)为三维封装,但该例为对贯通电极基板100采用二维和三维的混合封装的例子。在图14所示的例子中,针对LSI基板500层叠了6个贯通电极基板100并连接。其中,不仅所有贯通电极基板100层叠而配置,而且也在基板面内方向上排列而配置。
在图14的例子中,在LSI基板500上连接有2个贯通电极基板100,在这些贯通电极基板100上还连接有贯通电极基板100,在贯通电极基板10上还连接有贯通电极基板100。此外,如图13所示的例子那样,即使将贯通电极基板100用作用于连接多个半导体芯片的内插件,也可实现这种二维和三维的混合封装。例如,可将一些贯通电极基板100替换为半导体芯片。
另外,在图12至图14的例子中,示出了作为贯通电极基板使用第一实施方式的本发明的贯通电极基板100的例,但并不限于此,也可使用其他实施方式的本发明的贯通电极基板200、300和/或400。
本实施方式的本发明半导体装置1000例如可搭载于便携式终端(手机、智能手机及笔记本式个人计算机等)、信息处理装置(台式个人计算机、服务器、汽车导航等)、家用电器等各种电器。
(附图标记的说明)
100、200、300、400:贯通电极基板
102、202、302、402:基板
104、204、304、404:贯通孔
105、205、305、405:填充物
106、108、206、208、306、308、406、408:绝缘层
207、409:导电膜
307、407:绝缘层
110、112、210、212、310、312、410、412:通路(开口)
Claims (36)
1.一种贯通电极基板,具有:
基板,具有将第一面的第一开口和第二面的第二开口贯通的贯通孔;以及
填充物,配置于上述贯通孔内,
上述第二开口大于上述第一开口,并且,在上述第一开口与上述第二开口之间具有在俯视时面积最小的最小开口部,
剖视时上述贯通孔的侧壁的至少一部分包括具有变曲点的曲线,
上述曲线在上述第二开口与上述最小开口部之间具有上述变曲点。
2.根据权利要求1所述的贯通电极基板,其中,在上述第二开口与上述变曲点之间具有在俯视时面积最大的最大开口部。
3.根据权利要求1所述的贯通电极基板,上述贯通电极基板还具有气体释放部,上述气体释放部配置成与在上述第一面及上述第二面的任一个面露出的上述填充物相接触。
4.根据权利要求3所述的贯通电极基板,其中,上述气体释放部为用于使上述贯通孔内的气体向外部释放的绝缘性树脂。
5.根据权利要求3所述的贯通电极基板,其中,上述气体释放部的至少一部分还配置在上述贯通孔的侧壁与上述填充物之间。
6.根据权利要求3所述的贯通电极基板,其中,上述气体释放部具有开口,上述气体释放部的开口的俯视时的面积随着从上述基板侧离开而变大。
7.根据权利要求1所述的贯通电极基板,其中,在上述贯通孔的侧壁与上述填充物之间配置有导电膜。
8.根据权利要求7所述的贯通电极基板,其中,上述导电膜还配置在上述第一面及上述第二面上。
9.根据权利要求1所述的贯通电极基板,其中,在上述贯通孔的侧壁与上述填充物之间,从上述贯通孔的侧壁侧起,依次配置有绝缘膜及导电膜。
10.根据权利要求9所述的贯通电极基板,其中,上述导电膜还配置在上述第一面及上述第二面上。
11.根据权利要求1所述的贯通电极基板,其中,上述填充物为导电性材料。
12.根据权利要求1所述的贯通电极基板,其中,上述填充物为绝缘性材料。
13.根据权利要求1所述的贯通电极基板,其中,上述基板具有绝缘性。
14.根据权利要求1所述的贯通电极基板,其中,上述基板具有导电性。
15.根据权利要求3所述的贯通电极基板,其中,
上述气体释放部具有开口,
上述气体释放部的开口与上述第一开口及上述第二开口相重叠。
16.根据权利要求3所述的贯通电极基板,其中,
上述气体释放部具有开口,
上述气体释放部的开口不与上述第一开口及上述第二开口相重叠。
17.根据权利要求3所述的贯通电极基板,其中,
上述气体释放部配置于上述第一面及上述第二面,
上述第二面侧的上述气体释放部与上述填充物相接触的面积大于上述第一面侧的上述气体释放部与上述填充物相接触的面积。
18.一种半导体装置,具有:
LSI基板;
半导体芯片;以及
权利要求1所述的贯通电极基板。
19.一种贯通电极基板,具有:
基板,具有将第一面的第一开口和第二面的第二开口贯通的贯通孔,上述贯通孔在上述第一开口与上述第二开口之间具有第一部分及第二部分,与上述第一开口相比,上述第一部分的俯视时的面积小,与上述第一部分及上述第一开口相比,上述第二部分的俯视时的面积大;以及
填充物,配置于上述贯通孔内,
剖视时上述贯通孔的侧壁的至少一部分包括具有变曲点的曲线,
上述曲线在上述第一部分与上述第二部分之间具有上述变曲点。
20.根据权利要求19所述的贯通电极基板,其中,与上述第一开口相比,上述第二开口的俯视时的面积大,与上述第二开口相比,上述第二部分的俯视时的面积大。
21.根据权利要求19所述的贯通电极基板,其中,上述贯通电极基板还具有气体释放部,上述气体释放部配置成与在上述第一面及上述第二面的任一个面露出的上述填充物相接触。
22.根据权利要求21所述的贯通电极基板,其中,上述气体释放部为用于使上述贯通孔内的气体向外部释放的绝缘性树脂。
23.根据权利要求21所述的贯通电极基板,其中,上述气体释放部的至少一部分还配置在上述贯通孔的侧壁与上述填充物之间。
24.根据权利要求21所述的贯通电极基板,其中,上述气体释放部具有开口,上述气体释放部的开口的俯视时的面积随着从上述基板侧离开而变大。
25.根据权利要求19所述的贯通电极基板,其中,在上述贯通孔的侧壁与上述填充物之间配置有导电膜。
26.根据权利要求25所述的贯通电极基板,其中,上述导电膜还配置在上述第一面及上述第二面上。
27.根据权利要求19所述的贯通电极基板,其中,在上述贯通孔的侧壁与上述填充物之间,从上述贯通孔的侧壁侧起,依次配置有绝缘膜及导电膜。
28.根据权利要求27所述的贯通电极基板,其中,上述导电膜还配置在上述第一面及上述第二面上。
29.根据权利要求19所述的贯通电极基板,其中,上述填充物为导电性材料。
30.根据权利要求19所述的贯通电极基板,其中,上述填充物为绝缘性材料。
31.根据权利要求19所述的贯通电极基板,其中,上述基板具有绝缘性。
32.根据权利要求19所述的贯通电极基板,其中,上述基板具有导电性。
33.根据权利要求21所述的贯通电极基板,其中,
上述气体释放部具有开口,
上述气体释放部的开口与上述第一开口及上述第二开口相重叠。
34.根据权利要求21所述的贯通电极基板,其中,
上述气体释放部具有开口,
上述气体释放部的开口不与上述第一开口及上述第二开口相重叠。
35.根据权利要求21所述的贯通电极基板,其中,
上述气体释放部配置于上述第一面及上述第二面,
上述第二面侧的上述气体释放部与上述填充物相接触的面积大于上述第一面侧的上述气体释放部与上述填充物相接触的面积。
36.一种半导体装置,具有:
LSI基板;
半导体芯片;以及
权利要求19所述的贯通电极基板。
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EP3073523A4 (en) | 2017-06-28 |
CN109616458B (zh) | 2023-06-23 |
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US10256176B2 (en) | 2019-04-09 |
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EP4095895A2 (en) | 2022-11-30 |
US20200357733A1 (en) | 2020-11-12 |
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US20220246512A1 (en) | 2022-08-04 |
US20160276257A1 (en) | 2016-09-22 |
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