JP4279869B2 - 多層セラミックス基板 - Google Patents
多層セラミックス基板 Download PDFInfo
- Publication number
- JP4279869B2 JP4279869B2 JP2006350628A JP2006350628A JP4279869B2 JP 4279869 B2 JP4279869 B2 JP 4279869B2 JP 2006350628 A JP2006350628 A JP 2006350628A JP 2006350628 A JP2006350628 A JP 2006350628A JP 4279869 B2 JP4279869 B2 JP 4279869B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- surface conductor
- conductor
- glass
- substrate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1163—Chemical reaction, e.g. heating solder by exothermic reaction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Description
先の実施形態に準じて多層セラミックス基板を作製した。作製に際しては、表面導体形成のための表面導体パターンをZnOを含む導体ペーストで形成した。一方、セラミックス基板層の形成にはアルミナ(Al2O3)をフィラーとして含むガラスセラミックスシートを用いた。
作製した各多層セラミックス基板について、表面導体の裏押し強度を評価した。裏押し強度は、PCT前及びPCT後について測定し、PCT後の劣化率を算出した。PCTの条件としては、2気圧、温度121℃、相対湿度96%、時間60時間とした。
Claims (3)
- 複数のセラミックス基板層が積層された積層体の少なくとも一方の表面に表面導体を有する多層セラミックス基板であって、
前記セラミックス基板層中のセラミックス成分と前記表面導体中のガラス成分とが反応することにより形成された反応相が前記セラミックス基板層と表面導体の界面に析出し、
少なくとも前記表面導体と接するセラミックス基板層がAl 2 O 3 をフィラー成分とするガラスセラミックスにより形成されるとともに、前記表面導体がガラス成分としてZnを含み、
前記反応相としてZnAl 2 O 4 を含み、
前記表面導体と接するセラミックス基板層は、少なくとも表面導体と接する部分におけるAl 2 O 3 の含有量が34体積%以上、40体積%以下であることを特徴とする多層セラミックス基板。 - 前記表面導体と接するセラミックス基板層は、少なくとも表面導体と接する部分におけるAl2O3含有量が他の部分におけるAl2O3含有量よりも大であることを特徴とする請求項1記載の多層セラミックス基板。
- 前記表面導体と接するセラミックス基板層は、表面導体と接する側の面にAl2O3含有量が34体積%以上、40体積%以下である表面ガラスセラミックス層を有することを特徴とする請求項2記載の多層セラミックス基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006350628A JP4279869B2 (ja) | 2006-12-26 | 2006-12-26 | 多層セラミックス基板 |
US12/000,177 US7662477B2 (en) | 2006-12-26 | 2007-12-10 | Multilayer ceramics substrate |
TW96147733A TW200843603A (en) | 2006-12-26 | 2007-12-13 | Multilayer ceramic substrate |
EP20070024830 EP1940210B1 (en) | 2006-12-26 | 2007-12-20 | Multilayer ceramics substrate |
DE200760008043 DE602007008043D1 (de) | 2006-12-26 | 2007-12-20 | Mehrschichtiges Keramiksubstrat |
KR1020070137346A KR100922079B1 (ko) | 2006-12-26 | 2007-12-26 | 다층 세라믹 기판 |
CN2007103072016A CN101209929B (zh) | 2006-12-26 | 2007-12-26 | 多层陶瓷基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006350628A JP4279869B2 (ja) | 2006-12-26 | 2006-12-26 | 多層セラミックス基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008166307A JP2008166307A (ja) | 2008-07-17 |
JP4279869B2 true JP4279869B2 (ja) | 2009-06-17 |
Family
ID=39282678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006350628A Expired - Fee Related JP4279869B2 (ja) | 2006-12-26 | 2006-12-26 | 多層セラミックス基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7662477B2 (ja) |
EP (1) | EP1940210B1 (ja) |
JP (1) | JP4279869B2 (ja) |
KR (1) | KR100922079B1 (ja) |
CN (1) | CN101209929B (ja) |
DE (1) | DE602007008043D1 (ja) |
TW (1) | TW200843603A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
US9420707B2 (en) * | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
CN103650648B (zh) * | 2011-06-29 | 2017-06-09 | 株式会社村田制作所 | 多层陶瓷基板及其制造方法 |
WO2013133827A1 (en) | 2012-03-07 | 2013-09-12 | Intel Corporation | Glass clad microelectronic substrate |
US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
JP6624282B2 (ja) * | 2016-04-28 | 2019-12-25 | 株式会社村田製作所 | 多層セラミック基板 |
CN115745577B (zh) * | 2022-10-19 | 2023-09-22 | 中国建筑材料科学研究总院有限公司 | 一种超薄低温烧结陶瓷基板的制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3322079A1 (de) | 1983-06-20 | 1984-12-20 | Cassella Ag, 6000 Frankfurt | Tetrahydropyridazinonderivate, verfahren zu ihrer herstellung und ihre verwendung |
JPH06237081A (ja) | 1993-02-10 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 多層セラミック基板の製造方法 |
JPH09221375A (ja) | 1996-02-14 | 1997-08-26 | Sumitomo Metal Ind Ltd | セラミックス基板及びその製造方法 |
JPH11135899A (ja) | 1997-10-30 | 1999-05-21 | Kyocera Corp | セラミック回路基板 |
JP2001028474A (ja) | 1999-05-12 | 2001-01-30 | Tdk Corp | 電子部品及びその製造方法 |
JP3680684B2 (ja) * | 2000-03-06 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
JP3680713B2 (ja) * | 2000-07-21 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
JP2002338341A (ja) | 2001-05-14 | 2002-11-27 | Ngk Spark Plug Co Ltd | 低温焼成磁器及びその製造方法並びに配線基板 |
JP2003277852A (ja) | 2002-03-25 | 2003-10-02 | Kyocera Corp | 銅メタライズ組成物およびセラミック配線基板 |
KR100506731B1 (ko) * | 2002-12-24 | 2005-08-08 | 삼성전기주식회사 | 저온 소성 유전체 조성물, 적층 세라믹 커패시터 및세라믹 전자부품 |
JP2005216998A (ja) | 2004-01-28 | 2005-08-11 | Kyocera Corp | セラミック回路基板及びその製造方法 |
JP3929989B2 (ja) | 2004-03-29 | 2007-06-13 | 京都エレックス株式会社 | 導電性ペースト及びその導電性ペーストを用いたセラミック多層回路基板。 |
JP4699769B2 (ja) * | 2005-02-02 | 2011-06-15 | 日本特殊陶業株式会社 | セラミック多層基板の製造方法 |
-
2006
- 2006-12-26 JP JP2006350628A patent/JP4279869B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-10 US US12/000,177 patent/US7662477B2/en active Active
- 2007-12-13 TW TW96147733A patent/TW200843603A/zh not_active IP Right Cessation
- 2007-12-20 DE DE200760008043 patent/DE602007008043D1/de active Active
- 2007-12-20 EP EP20070024830 patent/EP1940210B1/en not_active Expired - Fee Related
- 2007-12-26 CN CN2007103072016A patent/CN101209929B/zh not_active Expired - Fee Related
- 2007-12-26 KR KR1020070137346A patent/KR100922079B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100922079B1 (ko) | 2009-10-16 |
TW200843603A (en) | 2008-11-01 |
KR20080060184A (ko) | 2008-07-01 |
DE602007008043D1 (de) | 2010-09-09 |
EP1940210A3 (en) | 2009-07-08 |
EP1940210B1 (en) | 2010-07-28 |
US7662477B2 (en) | 2010-02-16 |
TWI358982B (ja) | 2012-02-21 |
CN101209929B (zh) | 2012-09-05 |
US20080152928A1 (en) | 2008-06-26 |
EP1940210A2 (en) | 2008-07-02 |
CN101209929A (zh) | 2008-07-02 |
JP2008166307A (ja) | 2008-07-17 |
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