FR2412874A1 - Organe photosensible pour operation electrophotographique et son procede de realisation - Google Patents

Organe photosensible pour operation electrophotographique et son procede de realisation

Info

Publication number
FR2412874A1
FR2412874A1 FR7836015A FR7836015A FR2412874A1 FR 2412874 A1 FR2412874 A1 FR 2412874A1 FR 7836015 A FR7836015 A FR 7836015A FR 7836015 A FR7836015 A FR 7836015A FR 2412874 A1 FR2412874 A1 FR 2412874A1
Authority
FR
France
Prior art keywords
photosensitive
electrophotographic
realization process
organ
photosensitive organ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7836015A
Other languages
English (en)
Other versions
FR2412874B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP52154629A external-priority patent/JPS6035059B2/ja
Priority claimed from JP595878A external-priority patent/JPS5499441A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2412874A1 publication Critical patent/FR2412874A1/fr
Application granted granted Critical
Publication of FR2412874B1 publication Critical patent/FR2412874B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

LA PRESENTE INVENTION CONCERNE LES ORGANES PHOTOSENSIBLES POUR OPERATIONS ELECTROPHOTOGRAPHIQUES ET LEUR PROCEDE DE PREPARATION. ELLE SE RAPPORTE A UN ORGANE PHOTOSENSIBLE AYANT UNE COUCHE DE SILICIUM AMORPHE CONTENANT DES ATOMES D'HYDROGENE, A RAISON DE 10 A 40 ATOMES , FORMANT UNE COUCHE PHOTOCONDUCTRICE. L'OPERATION EST REALISEE DANS UNE DECHARGE LUMINESCENTE OU PAR PULVERISATION CATHODIQUE, UNE COUCHE ANTIREFLECHISSANTE PEUT ETRE PLACEE SUR LA COUCHE PHOTOCONDUCTRICE. APPLICATION AUX ORGANES PHOTOSENSIBLES DES COPIEURS ELECTROPHOTOGRAPHIQUES.
FR7836015A 1977-12-22 1978-12-21 Organe photosensible pour operation electrophotographique et son procede de realisation Granted FR2412874A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP52154629A JPS6035059B2 (ja) 1977-12-22 1977-12-22 電子写真感光体およびその製造方法
JP595878A JPS5499441A (en) 1978-01-23 1978-01-23 Production of electrophotographic photoreceptor

Publications (2)

Publication Number Publication Date
FR2412874A1 true FR2412874A1 (fr) 1979-07-20
FR2412874B1 FR2412874B1 (fr) 1982-06-25

Family

ID=26339997

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7836015A Granted FR2412874A1 (fr) 1977-12-22 1978-12-21 Organe photosensible pour operation electrophotographique et son procede de realisation
FR8119504A Expired FR2487535B1 (fr) 1977-12-22 1981-10-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8119504A Expired FR2487535B1 (fr) 1977-12-22 1981-10-16

Country Status (7)

Country Link
US (9) US4265991A (fr)
AU (1) AU530905B2 (fr)
CA (1) CA1166505A (fr)
DE (1) DE2855718C3 (fr)
FR (2) FR2412874A1 (fr)
GB (1) GB2013725B (fr)
HK (3) HK42788A (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2937098A1 (de) * 1979-09-13 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Abbildungsflaeche fuer den elektrofotografischen oder xeroradiografischen umdruck und verfahren zur herstellung derselben
EP0035146A2 (fr) * 1980-02-15 1981-09-09 Matsushita Electric Industrial Co., Ltd. Dispositif semiconducteur photoélectrique
EP0038221A2 (fr) * 1980-04-16 1981-10-21 Hitachi, Ltd. Elément électrophotographique
EP0039223A2 (fr) * 1980-04-25 1981-11-04 Hitachi, Ltd. Elément électrophotographique et procédé pour l'utilisation d'un élément électrophotographique
FR2482786A1 (fr) * 1980-05-19 1981-11-20 Energy Conversion Devices Inc Procede de fabrication de films de silicium a dopage de type p et dispositif realise a partir de ces films
FR2487535A1 (fr) * 1977-12-22 1982-01-29 Canon Kk
EP0045204A2 (fr) * 1980-07-28 1982-02-03 Hitachi, Ltd. Organe électrophotographique et appareil électrophotographique le comprenant
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
FR2490839A1 (fr) * 1980-09-25 1982-03-26 Canon Kk Element photoconducteur
EP0060625A2 (fr) * 1981-03-16 1982-09-22 Energy Conversion Devices, Inc. Dépôt de matériaux amorphes à partir d'un plasma
FR2504697A1 (fr) * 1981-04-24 1982-10-29 Canon Kk Element photoconducteur
EP0066812A2 (fr) * 1981-05-29 1982-12-15 Kabushiki Kaisha Toshiba Elément photosensible électrophotographique
FR2520886A1 (fr) * 1982-02-01 1983-08-05 Canon Kk Element photoconducteur
FR2520887A1 (fr) * 1982-02-04 1983-08-05 Canon Kk Element photoconducteur
FR2535902A1 (fr) * 1982-11-04 1984-05-11 Canon Kk Element photoconducteur

Families Citing this family (199)

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Publication number Priority date Publication date Assignee Title
US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
DE2908123A1 (de) * 1978-03-03 1979-09-06 Canon Kk Bildaufzeichnungsmaterial fuer elektrophotographie
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
JPS55166647A (en) * 1979-06-15 1980-12-25 Fuji Photo Film Co Ltd Photoconductive composition and electrophotographic receptor using this
US4365015A (en) * 1979-08-20 1982-12-21 Canon Kabushiki Kaisha Photosensitive member for electrophotography composed of a photoconductive amorphous silicon
US4349617A (en) * 1979-10-23 1982-09-14 Fuji Photo Film Co., Ltd. Function separated type electrophotographic light-sensitive members and process for production thereof
JPS5662254A (en) * 1979-10-24 1981-05-28 Canon Inc Electrophotographic imaging material
DE3046509A1 (de) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Elektrophotographisches bilderzeugungsmaterial
US5382487A (en) * 1979-12-13 1995-01-17 Canon Kabushiki Kaisha Electrophotographic image forming member
US4464415A (en) * 1980-03-03 1984-08-07 Shunpei Yamazaki Photoelectric conversion semiconductor manufacturing method
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS56156836A (en) * 1980-05-08 1981-12-03 Minolta Camera Co Ltd Electrophotographic receptor
DE3153301C2 (fr) * 1980-05-08 1991-09-26 Minolta Camera K.K., Osaka, Jp
JPS56164348A (en) * 1980-05-21 1981-12-17 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5744154A (en) * 1980-08-29 1982-03-12 Canon Inc Electrophotographic image formation member
JPS5748735A (en) * 1980-09-08 1982-03-20 Canon Inc Manufacture of image forming member for electrophotography
JPS5754959A (en) * 1980-09-18 1982-04-01 Canon Inc Printing method
GB2088628B (en) * 1980-10-03 1985-06-12 Canon Kk Photoconductive member
US4409308A (en) * 1980-10-03 1983-10-11 Canon Kabuskiki Kaisha Photoconductive member with two amorphous silicon layers
JPS5764596A (en) * 1980-10-06 1982-04-19 Fuji Photo Film Co Ltd Heat mode recording material
US4403026A (en) * 1980-10-14 1983-09-06 Canon Kabushiki Kaisha Photoconductive member having an electrically insulating oxide layer
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US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
JPS61221752A (ja) * 1985-03-12 1986-10-02 Sharp Corp 電子写真感光体
CN1014650B (zh) * 1987-12-14 1991-11-06 中国科学院上海硅酸盐研究所 具过渡层的光接受体及其制作方法

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487535A1 (fr) * 1977-12-22 1982-01-29 Canon Kk
DE2937098A1 (de) * 1979-09-13 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Abbildungsflaeche fuer den elektrofotografischen oder xeroradiografischen umdruck und verfahren zur herstellung derselben
EP0035146A3 (en) * 1980-02-15 1984-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device, in particular for photoelectric purposes
EP0035146A2 (fr) * 1980-02-15 1981-09-09 Matsushita Electric Industrial Co., Ltd. Dispositif semiconducteur photoélectrique
EP0038221A2 (fr) * 1980-04-16 1981-10-21 Hitachi, Ltd. Elément électrophotographique
EP0038221A3 (en) * 1980-04-16 1982-02-03 Hitachi, Ltd. Electrophotographic member
EP0039223A2 (fr) * 1980-04-25 1981-11-04 Hitachi, Ltd. Elément électrophotographique et procédé pour l'utilisation d'un élément électrophotographique
EP0039223A3 (en) * 1980-04-25 1982-02-17 Hitachi, Ltd. Electrophotographic member and method of operating the same
FR2482786A1 (fr) * 1980-05-19 1981-11-20 Energy Conversion Devices Inc Procede de fabrication de films de silicium a dopage de type p et dispositif realise a partir de ces films
EP0045204A2 (fr) * 1980-07-28 1982-02-03 Hitachi, Ltd. Organe électrophotographique et appareil électrophotographique le comprenant
EP0045204A3 (en) * 1980-07-28 1982-02-24 Hitachi, Ltd. Electrophotographic member and electrophotographic apparatus including the member
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
FR2490839A1 (fr) * 1980-09-25 1982-03-26 Canon Kk Element photoconducteur
EP0060625A2 (fr) * 1981-03-16 1982-09-22 Energy Conversion Devices, Inc. Dépôt de matériaux amorphes à partir d'un plasma
EP0060625A3 (en) * 1981-03-16 1983-01-19 Energy Conversion Devices Inc. Improved method for plasma deposition of amorphous materials
FR2504697A1 (fr) * 1981-04-24 1982-10-29 Canon Kk Element photoconducteur
EP0066812A2 (fr) * 1981-05-29 1982-12-15 Kabushiki Kaisha Toshiba Elément photosensible électrophotographique
EP0066812A3 (en) * 1981-05-29 1983-10-12 Kabushiki Kaisha Toshiba Electrophotographic photosensitive member
FR2520886A1 (fr) * 1982-02-01 1983-08-05 Canon Kk Element photoconducteur
FR2520887A1 (fr) * 1982-02-04 1983-08-05 Canon Kk Element photoconducteur
FR2535902A1 (fr) * 1982-11-04 1984-05-11 Canon Kk Element photoconducteur

Also Published As

Publication number Publication date
US4507375A (en) 1985-03-26
DE2855718C2 (fr) 1990-02-15
GB2013725A (en) 1979-08-15
US4552824A (en) 1985-11-12
US5756250A (en) 1998-05-26
GB2013725B (en) 1983-02-23
AU530905B2 (en) 1983-08-04
US4265991A (en) 1981-05-05
AU4271578A (en) 1979-06-28
FR2487535A1 (fr) 1982-01-29
FR2487535B1 (fr) 1986-04-04
US4451547A (en) 1984-05-29
HK42488A (en) 1988-06-17
HK42588A (en) 1988-06-17
US5640663A (en) 1997-06-17
US5585149A (en) 1996-12-17
US5658703A (en) 1997-08-19
US5576060A (en) 1996-11-19
HK42788A (en) 1988-06-17
CA1166505A (fr) 1984-05-01
FR2412874B1 (fr) 1982-06-25
DE2855718C3 (de) 1996-08-01
DE2855718A1 (de) 1979-06-28

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