CA1249476A - Procede electrophotographique a champ faible - Google Patents
Procede electrophotographique a champ faibleInfo
- Publication number
- CA1249476A CA1249476A CA000481644A CA481644A CA1249476A CA 1249476 A CA1249476 A CA 1249476A CA 000481644 A CA000481644 A CA 000481644A CA 481644 A CA481644 A CA 481644A CA 1249476 A CA1249476 A CA 1249476A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- doped
- thickness
- range
- intrinsic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64260384A | 1984-08-20 | 1984-08-20 | |
US642,603 | 1984-08-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1249476A true CA1249476A (fr) | 1989-01-31 |
Family
ID=24577268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000481644A Expired CA1249476A (fr) | 1984-08-20 | 1985-05-15 | Procede electrophotographique a champ faible |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0173620B1 (fr) |
JP (1) | JPS6159353A (fr) |
CA (1) | CA1249476A (fr) |
DE (1) | DE3569843D1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
DE2954552C2 (fr) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
US4409308A (en) * | 1980-10-03 | 1983-10-11 | Canon Kabuskiki Kaisha | Photoconductive member with two amorphous silicon layers |
JPS57177156A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Photoconductive material |
-
1985
- 1985-05-15 CA CA000481644A patent/CA1249476A/fr not_active Expired
- 1985-08-09 DE DE8585401622T patent/DE3569843D1/de not_active Expired
- 1985-08-09 EP EP19850401622 patent/EP0173620B1/fr not_active Expired
- 1985-08-19 JP JP18059685A patent/JPS6159353A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0173620B1 (fr) | 1989-04-26 |
DE3569843D1 (en) | 1989-06-01 |
JPS6159353A (ja) | 1986-03-26 |
EP0173620A1 (fr) | 1986-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4426435A (en) | Process for forming an electrophotographic member having a protective layer | |
CA1152802A (fr) | Element electrophotographique comprenant une couche de silicium amorphe contenant de l'hydrogene | |
US4338387A (en) | Overcoated photoreceptor containing inorganic electron trapping and hole trapping layers | |
CA1151935A (fr) | Dispositif photosensible inorganique a couche de piegeage | |
JPH07104605B2 (ja) | オ−バ−コ−テイング型無定形ケイ素像形成部材 | |
US4409309A (en) | Electrophotographic light-sensitive element | |
EP0759579B1 (fr) | Eléments électrophotographiques comprenant de couches de transport de charges contenant des liants en polyester à grandes mobilité de porteurs de charge | |
JPS6248217B2 (fr) | ||
US4202937A (en) | Electrophotographic photosensitive member having no fatigue effect | |
US3170790A (en) | Red sensitive xerographic plate and process therefor | |
US4619877A (en) | Low field electrophotographic process | |
CA1249476A (fr) | Procede electrophotographique a champ faible | |
GB2102587A (en) | Multilayer photoconductive assembly with intermediate heterojunction | |
US4540647A (en) | Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range | |
US3867143A (en) | Electrophotographic photosensitive material | |
JPH07120953A (ja) | 電子写真感光体およびそれを用いた画像形成方法 | |
EP0021751B1 (fr) | Plaque électrophotographique et procédé pour sa préparation | |
US4699861A (en) | Photosensitive member for use in electrophotography | |
GB1578960A (en) | Electrophotographic imaging member and process | |
US4711831A (en) | Spectral sensitization of amorphous silicon photoconductive elements with phthalocyanine and arylamine layers | |
Taniguchi et al. | A highly sensitive chalcogenide photoconductor in a near‐infrared wavelength region | |
JPH0810332B2 (ja) | 電子写真感光体の製造方法 | |
JPH0760271B2 (ja) | 光導電部材 | |
JPH058420B2 (fr) | ||
Nakayama et al. | Stability of amorphous silicon photoreceptor for diode laser printer application |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |