EP0316214B1 - Elektronenquelle mit Mikrospitzen-Emissionskathoden und diese Quelle benutzende Bildwiedergabe-Anordnung, die auf durch Feldemission angeregter Kathodolumineszenz beruht - Google Patents

Elektronenquelle mit Mikrospitzen-Emissionskathoden und diese Quelle benutzende Bildwiedergabe-Anordnung, die auf durch Feldemission angeregter Kathodolumineszenz beruht Download PDF

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Publication number
EP0316214B1
EP0316214B1 EP88402742A EP88402742A EP0316214B1 EP 0316214 B1 EP0316214 B1 EP 0316214B1 EP 88402742 A EP88402742 A EP 88402742A EP 88402742 A EP88402742 A EP 88402742A EP 0316214 B1 EP0316214 B1 EP 0316214B1
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EP
European Patent Office
Prior art keywords
source
cathode
layer
conductive layer
resistive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP88402742A
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English (en)
French (fr)
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EP0316214A1 (de
Inventor
Michel Borel
Jean-François Boronat
Robert Meyer
Philippe Rambaud
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/04—Electrodes; Screens
    • H01J17/06—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the present invention relates to an electron source with microtip emissive cathodes and a cathodoluminescence display device excited by field emission, using this source.
  • the invention applies in particular to the production of simple displays, allowing the visualization of still images, and to the production of complex multiplexed screens, allowing the visualization of animated images, for example of the type of television images.
  • the electron source used in this known device is schematically represented in FIG. 1.
  • this source has a matrix structure and optionally comprises, on a substrate 2, for example made of glass, a thin layer of silica 4.
  • a substrate 2 for example made of glass
  • silica layer 4 On this silica layer 4 is formed a plurality of electrodes 5 in the form of parallel conductive strips or layers 6, playing the role of cathode conductors and constituting the columns of the matrix structure.
  • These cathode conductors 5 are covered with an electrically insulating layer 8, for example made of silica, except on the connection ends 19 of these conductors 5, ends provided for the polarization of said conductors.
  • an electrically insulating layer 8 for example made of silica, except on the connection ends 19 of these conductors 5, ends provided for the polarization of said conductors.
  • electrodes 10 Above this layer 8 are formed a plurality of electrodes 10 also in the form of parallel conductive strips. These electrodes 10 are perpendicular to
  • the known source also includes a plurality of elementary electron emitters (microtips), a copy of which 12 is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the layer 6 of the cathode conductor 5 corresponding to this zone is provided with a plurality of microtips 12, for example made of molybdenum and the grid 10 corresponding to said zone has an opening 14 facing each of the microtips.
  • Each of these latter conforms substantially to the shape of a cone the base of which rests on the layer 6 and the top of which is situated at the level of the corresponding opening 14.
  • the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.
  • the grids as well as the insulating layer 8 are provided with openings elsewhere than in the crossing zones, a microtip being associated with each of these openings, due to the method described in the patent application cited above, due to ease of manufacture.
  • each layer 6 has a thickness of the order of 0.2 micrometer
  • the electrically insulating layer 8 has a thickness of the order of 1 micrometer
  • each grid has a thickness of the order of 0.4 micrometer
  • each opening 14 has a diameter of the order of 1.3 micrometer
  • the base of each microtip has a diameter of the order of 1.1 micrometer.
  • the known device further comprises a screen E comprising a cathodoluminescent anode 16 disposed opposite the grids, parallel to the latter.
  • control means 20 When the known device is put under vacuum, by carrying by control means 20 a grid at a potential for example of the order of 100 volts relative to a cathode conductor, the microtips located in the crossing zone of this grid and of this cathode conductor emit electrons.
  • the anode 16 is advantageously brought by these means 20 to a potential equal to or greater than that of the grids; in particular, it can be grounded when the grids are brought to ground, or polarized negatively with respect to ground.
  • Each crossing zone which comprises for example 104 to 105 elementary emitters per mm2, thus corresponds to a bright spot on the screen.
  • the known source of electrons poses a problem: it has been found that, during the operation of this known device, especially during its start-up and during its stabilization period, local degassing takes place which can generate electric arcs between different components of the device (tips, grids, anodes). There is nothing in this case to limit the electric current in the cathode conductors. There is a runaway phenomenon during which this current increases and, at a certain moment, its intensity becomes greater than the maximum intensity Io of the electric current which the cathode conductors can withstand. Some of these are then destroyed and no longer work, in part or in whole depending on the location of the destruction (breakdown).
  • the known source of electrons is thus fragile and therefore has a limited lifespan.
  • resistors can only be used with electron sources - notably intended for the manufacture of display devices - of reduced size, complexity and functional possibility.
  • the known source of electrons thus has another drawback: the display devices which use it can exhibit significant point heterogeneities in luminosity.
  • the present invention makes it possible to remedy not only the disadvantage of brittleness mentioned above but also this other drawback, which was not the case with the source using the resistors.
  • resistive layer is meant an electrically resistant layer.
  • the invention makes it possible to limit the intensity of the current in each of the microtips of each cathode conductor and therefore makes it possible, a fortiori, to limit the intensity of the electric current flowing in the corresponding cathode conductor.
  • each microtip has a base (“pedestal”) made of an electrically resistant material.
  • the source object of the present invention in which each conductive layer is entirely covered by a continuous resistive layer, presents an important advantage compared to this known source: it allows a better dissipation of the thermal power released in the "active" parts of the resistive material (resistive parts included between the microtips and the conductive layers), which gives the source of the present invention more robustness and reliability.
  • the nominal current per transmitter is less than 1 microamp and generally between 0.1 and 1 microamp.
  • the resistance Ri that this resistive layer generates under the microtips has a value for example of the order of 107 to 108 ohms (corresponding to a voltage drop of 10 V in the resistive layer for a current of the order of 1 to 0.1 microampere per transmitter).
  • the entire voltage between the conductive layer and the grid which is generally of the order of 100 V, is transferred to the terminals of the resistive material.
  • the thermal power released in each active part then becomes very large and can be of the order of (100) 2 / 108 W or 0.1 mW in a volume of the order of 1 cubic micrometer (volume of the active part) .
  • the source object of the invention is therefore very advantageous compared to the source of the American document. mentioned above.
  • the source object of the invention may comprise a plurality of continuous resistive layers, respectively arranged on the conductive layers of the source. This plurality of resistive layers can be obtained by etching, between the cathode conductors, a single continuous resistive layer.
  • the source object of the invention comprises a single continuous resistive layer which covers all of the conductive layers of the source.
  • Each conductive layer can be made of a material chosen from the group comprising aluminum, tin oxide doped with antimony or fluorine, indium oxide doped with tin and niobium.
  • the resistive layer or layers are made of a material which is chosen from the group comprising In2O3, SnO2, Fe2O3, ZnO and Si doped, and which has a resistivity greater than that of the material constituting the conductive layer.
  • the resistivity of the resistive layer is between approximately 102 ohms.cm and 106 ohms.cm.
  • resistive materials of resistivity between 102 ohms.cm and 106 ohms.cm and in particular between 104 ohms.cm and 105 ohms.cm, allows to obtain a significant series resistance for example of the order of 108 ohms under each microtip for a resistive layer of 1 to 0.1 micrometer in thickness so as to obtain a good homogenization of emission, a good limitation of over-intensities and a good heat dissipation in the case of short circuits.
  • the silicon which, precisely, by suitable doping, can have a high resistivity for example of the order of 104 ohms.cm to 105 ohms.cm, can be advantageously chosen as a resistive material.
  • an electrical resistance 18 of appropriate Ro value is mounted in series with each cathode conductor 6.
  • the control means 20 known, making it possible to selectively bring the grids to positive potentials, for example of the order of 100 volts, with respect to the cathode conductors are electrically connected to the grids and to the cathode conductors and the electrical connection between these means 20 and each cathode conductor is performed via an electrical resistor 18. This is thus connected to the end of the connection 19 of the corresponding cathode conductor (end which is shown in Figure 1).
  • each of these electrical resistances is calculated so that the maximum intensity of the current capable of flowing in the corresponding cathode conductor is less than the critical intensity Io beyond which breakdowns occur.
  • This value Io depends on the size and the nature of the cathode conductors. It is always much greater than the intensity of the current corresponding to the nominal operation of the cathode conductors.
  • the cathode conductors are made of indium oxide and have a width of 0.7 mm, a thickness of 0, 2 micrometer, a length of 40 mm and a square resistance of 10 ohms, so that the electrical resistance of each cathode conductor has an Rc value of about 0.6 kilo-ohms;
  • the critical value Io is of the order of 10 milliamps, the intensity of the nominal current being less than or equal to about 1 milliampere; to excite a given crossing zone, the grid is brought to a positive potential U of the order of 100 volts relative to the corresponding cathode conductor, the quantity Ro + Rc having to be greater than U / Io.
  • the Ro value can be taken equal to approximately 10 kilo-ohms.
  • the source represented in FIG. 3, which uses electrical resistances, is applicable, for reasons of response time, only to screens of size, complexity and reduced functional possibility.
  • the response time of the corresponding cathode conductor is equal to the charge time of the capacitor formed by this cathode conductor, by the corresponding grid (line) and by the insulating layer separating the conductor cathodic grid.
  • This charging time is of the order of the product of the charging resistance Ro + Rc by the capacity of the capacitor in question.
  • the capacity is of the order of 4 nanofarads per cm2 and, for a screen of 1 dm2 of surface and 256 columns and 256 lines, the surface of a column is about 0.25 cm2.
  • the excitation time of a line for such a screen is 1 / (50x256) second, or approximately 80 microseconds.
  • the charging time is not negligible compared to the line excitation time (if it is for example greater than 10% of the latter), the coupling effect is visible.
  • the response time problem can be solved by replacing said electrical resistors of Ro value with resistive layers.
  • resistive layers thus we limit the current in the cathode conductors while having an access resistance to them practically zero.
  • FIG. 4 an exemplary embodiment of the source object of the invention is shown diagrammatically, making it possible to solve this problem of the response time and the problems of heterogeneity and over-intensity mentioned above.
  • the source schematically shown in Figure 4 differs from the source described with reference to Figures 1 and 2 in that, in the known source, described with reference to these Figures 1 and 2, each cathode conductor 5 has a single electrically conductive layer 6, while in the source according to the invention, shown in FIG.
  • each cathode conductor 5 comprises a first electrically conductive layer 22 resting on the electrically insulating layer 4 (as was the case with layer 6 of the figures 1 to 3) and a second resistive layer 24, which surmounts the conductive layer 22 and on which the bases of the microtips 12 of the cathode conductor 5 rest.
  • each cathode conductor of the source is thus presented in the form of a double-layer strip, the control means 20 being connected to the conductive layers 22.
  • the conductive layer 22 is for example made of aluminum.
  • the resistive layer 24 acts as a buffer resistance between the conductive layer and the corresponding elementary emitters 12.
  • the resistive layer which of course must have an electrical resistance greater than that of the layer conductive, is preferably made with materials having a resistivity of the order of 102 to 106 ohms.cm, compatible with the method of manufacturing cathode conductors (see in particular description of Figure 5).
  • this resistive layer 24 it is possible, for example, to choose as materials indium oxide In2O3, tin oxide SnO2, iron oxide Fe2O3, zinc oxide ZnO or doped silicon, by ensuring, of course, that the material chosen has a higher resistivity than that of the material chosen to produce the conductive layer.
  • the advantage of the embodiment shown in FIG. 4 lies inter alia in the fact that it makes it possible to "transfer" the "protection" resistors, of the type of resistors 18 in FIG. 3, between the conductive layer and each elementary emitter . A better response time is thus obtained, without appreciable increase in the cost of the electron source.
  • the intensity of the current flowing through each cathode conductor can be limited to a value less than or equal to Io, while allowing the nominal current to pass through this cathode conductor.
  • the resistive layer 24 therefore also provides protection against the risks of breakdown.
  • the load resistance is that of the conductive layer and therefore corresponds to a response time much less than a microsecond, in the case of a conductive layer of aluminum, which makes it possible to produce complex screens of big size.
  • the use of the resistive layer makes it possible to associate with each elementary emitter a resistance denoted Ri, which allows this resistive layer to also play a role of homogenization on the electronic emission.
  • Ri a resistance denoted Ri
  • Ri has a self-regulating effect on the current. Any abnormal brightness of the light points is thus greatly attenuated.
  • a first layer 22 of aluminum 200 nanometers thick and with resistivity is deposited by sputtering 3.10 ⁇ 6 ohm.cm then, on this aluminum layer, a second layer 24 of Fe2O2 iron oxide with a thickness of 150 nanometers and a resistivity of 104 ohm.cm, also by sputtering.
  • the two layers thus deposited are then etched successively for example through the same resin mask by chemical etching so as to obtain a network of parallel cathode strips or conductors 5 the length of which is 150 millimeters and the width of 300 micrometers, l the interval between two bands 5 being 50 micrometers.
  • the etching of the aluminum layer can be carried out by means of a bath comprising 4 volumes of H3PO4 at 85% by weight, 4 volumes of pure CH3COOH, 1 volume of HNO3 at 67% by weight and 1 volume of H2O, for 6 minutes at room temperature, for an aluminum layer 200 nm thick and the etching of the Fe2O3 layer can be carried out using the product Mixelec Mélange PFE 8.1, sold by the company SOPRELEC SA, for minutes at room temperature, for a layer of Fe3O3 150 nm thick.
  • the load resistance is that of the aluminum layer and is therefore approximately 75 ohms.
  • the area of a column is 0.45 cm2.
  • the response time is therefore of the order of 0.15 microseconds, with a capacity which remains of the order of 4 nanofarads per cm2.
  • each resistance Ri is calculated to calculate the value of each resistance Ri. It is observed that the lines of the electric current flowing through the cathode conductors are located in the conductive layer and pass through the various corresponding microtips by crossing the resistive layer perpendicularly to the latter.
  • the resistance Ri is therefore equal to the resistivity of the iron oxide Fe2O3 multiplied by the thickness of the resistive layer and divided by the base surface of an elementary electron emitter, which gives a resistance Ri equal in this case at around 107 ohms.
  • a microtip is crossed by a current of about 0.1 microampere, which corresponds to a voltage drop in Ri of 1 volt. The nominal operation is not disturbed.
  • the maximum current per transmitter can be 10 microamps.
  • the resistive material is advantageously suitably doped silicon.
  • a layer of this material is used which, preferably, is not etched between the cathode conductors, the leakage currents which it induces between these cathode conductors being tolerable.
  • a first layer 22 of aluminum 200 nm thick and with resistivity is deposited by cathode sputtering 3.10 ⁇ 6 ohm.cm.
  • This aluminum layer is then etched for example through a resin mask by chemical etching so as to obtain a network of parallel conductive strips or layers the length of which is 150 millimeters and the width of 300 micrometers for example, the interval between two bands being 50 micrometers.
  • the etching of the aluminum layer can for example be carried out by means of the bath described in the preceding example, relating to FIG. 5.
  • a layer 25 of phosphorus doped silicon for example, 500 nm thick and a resistivity of 5.104 ohms.cm is then deposited on the network of conductive layers by vacuum deposition techniques.
  • the resistance Ri here is 2.5.108 ohms. It is stronger than in the previous example described with reference to the FIG. 5, which has the effect on the one hand of reducing the leakage current due to possible short circuits, on the other hand of having a greater effect on the homogenization of the emission.

Claims (8)

  1. Elektronenquelle, die umfaßt:
    - erste parallele Elektroden (5), die die Rolle von kathodischen Leitern spielen, wobei jeder kathodische Leiter eine elektrisch leitende Schicht (22) umfaßt, deren eine Seite mehrere Mikrospitzen (12) aus einem elektonenemittierenden Material aufweist, und
    - zweite parallele Elektroden (10), die die Rolle von Gittern spielen, welche gegen die kathodischen Leiter (5) elektrisch isoliert sind und mit diesen einen Winkel bilden, der die Kreuzungsbereiche der kathodischen Leiter und der Gitter bestimmt, wobei sich die Mikrospitzen (12) unter diesen Kreuzungsbereichen befinden und die Gitter (10) außerdem gegenüber den genannten Flächen angeordnet sind und jeweils von Löchern (14) gegenüber den Mikrospitzen durchbohrt sind, wobei sich die Spitze jeder Mikrospitze genau auf der Höhe des ihr entsprechenden Lochs befindet und wobei die Mikrospitzen jedes Kreuzungsbereichs in der Lage sind, Elektronen zu emittieren, wenn das entsprechende Gitter gegenüber dem entsprechenden kathodischen Leiter positiv polarisiert ist und dann ein elektrischer Strom in jeder Mikrospitze des Bereichs fließt,
       Quelle, dadurch gekennzeichnet, daß jeder kathodische Leiter (5) außerdem Einrichtungen umfaßt, die dafür vorgesehen sind, die Stärke des in jeder Mikrospitze dieses kathodischen Leiters fließenden elektrischen Stromes zu begrenzen, wobei diese Einrichtungen eine zusammenhängende Widerstandsschicht (24, 25) umfassen, die auf der leitenden Schicht (22) des entsprechenden kathodischen Leiters (5) zwischen dieser leitenden Schicht und den entsprechenden Mikrospitzen (12) angeordnet ist, wobei diese letzteren auf der Widerstandsschicht (24, 25) liegen.
  2. Quelle gemäß Anspruch 1, dadurch gekennzeichnet, daß sie mehrere zusammenhängende Widerstandsschichten (24) umfaßt, die jeweils auf den leitenden Schichten der Quelle angeordnet sind.
  3. Quelle gemäß Anspruch 2, dadurch gekennzeichnet, daß diese mehreren Widerstandsschichten durch Ätzung zwischen den kathodischen Leitern aus einer einzigen zusammenhängenden Widerstandsschicht erhalten werden.
  4. Quelle gemäß Anspruch 1, dadurch gekennzeichnet, daß sie eine einzige zusammenhängende Widerstandsschicht (25) umfaßt, die die gesamten leitenden Schichten der Quelle bedeckt.
  5. Quelle gemäß einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß jede leitende Schicht (22) aus einem Material gefertigt ist, das aus der Gruppe gewählt wird, die Aluminium, mit Antimon oder Fluor dotiertes Zinnoxid, mit Zinn oder Niob dotiertes Indiumoxid enthält.
  6. Quelle gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß jede Widerstandsschicht (24, 25) aus einem Material gefertigt ist, das aus der Gruppe gewählt wird, die In₂O₃, SnO₂, Fe₂O₃, ZnO und dotiertes Si enthält, und das einen höheren spezifischen Widerstand als das Material, das die leitende Schicht (22) bildet, hat.
  7. Quelle gemäß einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß der spezifische Widerstand jeder Widerstandsschicht (24, 25) etwa zwischen 10² Ohm cm und 10⁶ Ohm cm liegt.
  8. Bildwiedergabe-Anordnung, die auf Kathodolumineszenz beruht und die umfaßt:
    - eine Elektronenquelle mit Mikrospitzen-Emissionskathoden und
    - eine Kathodoluminiszenz-Anode (16), dadurch gekennzeichnet, daß die Quelle konform mit einem der Ansprüche 1 bis 7 ist.
EP88402742A 1987-11-06 1988-11-02 Elektronenquelle mit Mikrospitzen-Emissionskathoden und diese Quelle benutzende Bildwiedergabe-Anordnung, die auf durch Feldemission angeregter Kathodolumineszenz beruht Expired - Lifetime EP0316214B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8715432A FR2623013A1 (fr) 1987-11-06 1987-11-06 Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
FR8715432 1987-11-06

Publications (2)

Publication Number Publication Date
EP0316214A1 EP0316214A1 (de) 1989-05-17
EP0316214B1 true EP0316214B1 (de) 1993-01-27

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Country Status (6)

Country Link
US (1) US4940916B1 (de)
EP (1) EP0316214B1 (de)
JP (1) JPH07118259B2 (de)
KR (1) KR970005760B1 (de)
DE (1) DE3877902T2 (de)
FR (1) FR2623013A1 (de)

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US4940916B1 (en) 1996-11-26
EP0316214A1 (de) 1989-05-17
KR970005760B1 (ko) 1997-04-19
US4940916A (en) 1990-07-10
FR2623013A1 (fr) 1989-05-12
DE3877902T2 (de) 1993-07-15
DE3877902D1 (de) 1993-03-11
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KR890008886A (ko) 1989-07-13
JPH07118259B2 (ja) 1995-12-18

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