EP0461990B1 - Elektronenquelle mit Mikropunktkathoden - Google Patents
Elektronenquelle mit Mikropunktkathoden Download PDFInfo
- Publication number
- EP0461990B1 EP0461990B1 EP91401536A EP91401536A EP0461990B1 EP 0461990 B1 EP0461990 B1 EP 0461990B1 EP 91401536 A EP91401536 A EP 91401536A EP 91401536 A EP91401536 A EP 91401536A EP 0461990 B1 EP0461990 B1 EP 0461990B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electron source
- source according
- resistive coating
- cathode
- resistive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims 8
- 238000000576 coating method Methods 0.000 claims 8
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000000265 homogenisation Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 241001639412 Verres Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Definitions
- the subject of the present invention is a source of electrons with microtip emissive cathodes and its manufacturing process. It applies in particular to the production of flat display screens.
- French patent Nos. 2,593,953 and 2,623,013 disclose cathodoluminescence display devices excited by field emission, comprising an electron source with emissive cathodes with microtips.
- FIG. 1 schematically represents a known source of electrons with microtip emissive cathodes described in detail in the aforementioned document No. 2,623,013.
- This source has a matrix structure and optionally comprises on a substrate 2, for example made of glass, a thin layer of silica 4.
- a substrate 2 for example made of glass
- a thin layer of silica 4 On this layer of silica 4 are formed a plurality of electrodes 5 in the form of parallel conductive strips playing the role of cathodic conductors and constituting the columns of the matrix structure.
- the cathode conductors are each covered by a resistive layer 7 which can be continuous (except on the ends to allow the connection of the cathode conductors with polarization means 20).
- Electrodes 10 are formed above the insulating layer 8 in the form of parallel conductive strips. These electrodes 10 are perpendicular to the electrodes 5 and play the role of grids which constitute the lines of the matrix structure.
- the known source also includes a plurality of elementary electron emitters (microtips), a copy of which is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the resistive layer 7 corresponding to this zone supports microtips 12, for example made of molybdenum, and the grid 10 corresponding to said zone has an opening 14 opposite each of the microtips.
- microtips elementary electron emitters
- the resistive layer 7 corresponding to this zone supports microtips 12, for example made of molybdenum
- the grid 10 corresponding to said zone has an opening 14 opposite each of the microtips.
- Each of the latter substantially matches the shape of a cone, the base of which rests on layer 7 and the apex of which is situated at the level of the corresponding opening 14.
- the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.
- the essential purpose of the resistive layer 7 is to limit the current in each emitter 12 and therefore, therefore, to homogenize the electronic emission. This allows, in an application to excite the bright spots (pixels) of a display screen, to eliminate too bright spots.
- the resistive layer 7 also makes it possible to reduce the risks of breakdown at the level of the microtips 12 due to the current limitation and thus to avoid the appearance of short circuits between lines and columns.
- the resistive layer 7 is supposed to authorize the short-circuit of some transmitters 12 with a grid 10, the very limited leakage current (of the order of a few ⁇ A) in these short-circuits not having to disturb the functioning of the rest of the cathode conductor.
- the problem posed by the appearance of short circuits between microtips and a grid is not satisfactorily resolved by a device of the type described in French patent No. 2,623,013.
- FIG 3 there is shown schematically a microtip.
- a metallic particle 16 causes a short circuit of the microtip 12 with a grid 10; in this case, all the voltage applied between gate 10 and cathode conductor 5 (Vcg, of the order of 100 V) is transferred to the terminals of the resistive layer 7.
- Vcg voltage applied between gate 10 and cathode conductor 5
- the resistive layer 7 To be able to tolerate some short circuits of this type, which are almost inevitable due to the very large number of microtips, the resistive layer 7 must be able to withstand a voltage of around 100 V, which requires that its thickness be greater than 2 ⁇ m. Otherwise, it slams by thermal effect and a short circuit can appear between the grid and the cathode conductor making the electron source unusable.
- the present invention overcomes this drawback. It aims to improve the breakdown resistance of an electron source with microtip emissive cathodes, this improvement being obtained without increasing the thickness of the resistive source.
- the invention recommends the use of electrodes (for example, the conductors cathodic) in a lattice shape so that these electrodes and the associated resistive layers are substantially in the same plane.
- the breakdown resistance no longer depends (at first order) on the thickness of the resistive layer but on the distance between the cathode conductor and the microtip. It is therefore sufficient to maintain a sufficient distance between the cathode conductor and the microtip to avoid breakdown while retaining a homogenization effect for which the resistive layer is provided.
- Each of the electrodes of at least one of the series has a lattice structure in contact with a resistive layer.
- the electrodes having a lattice structure are metallic; they are for example in AI, Mo, Cr, Nb or other. It therefore has better conductivity.
- the dimension of a mesh of the trellis is less than the dimension of a crossing zone.
- a crossing zone covers several meshes of the trellis.
- the mesh of the trellis can have any shape; they can for example be rectangular or square.
- the meshes of the trellis are square.
- the cathode conductors have a lattice structure.
- the microtips occupy the central regions of the mesh of the lattice. This arrangement makes it possible to provide a sufficient distance between a cathode conductor and the microtips to avoid breakdown.
- each cathode conductor is covered by a resistive layer.
- a resistive layer is interposed between the insulating support and each cathode conductor.
- the resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide.
- the resistive layer is made of doped silicon.
- This resistivity is generally greater than 102 ⁇ cm while the resistivity of the cathode conductor is generally less than 10 ⁇ 3 ⁇ cm.
- the grids have a lattice structure.
- the cathode conductors may or may not have a lattice structure.
- the resistive layer is no longer necessary, it can however be present to maintain a homogenization effect.
- each grid is covered by a second resistive layer pierced with openings facing the microtips.
- each grid rests on a second resistive layer pierced with openings facing the microtips.
- the resistive layer can be made of a material such as indium oxide, tin oxide or iron oxide.
- the resistive layer is made of doped silicon.
- resistivity suited to the effects of homogenization and protection against short-circuits. This resistivity is generally greater than 102 ⁇ cm while the resistivity of the cathode conductor is generally less than 10 ⁇ 3 ⁇ cm.
- the meshes of the lattices are preferably of the same dimensions opposite.
- the cathode conductors 5 have a lattice structure.
- the mesh of the trellis can be of any geometry. In the embodiment shown, the meshes of the trellis are square.
- the pitch of the mesh p is, for example, about 50 micrometers and the width d of the conductive tracks forming the lattice is for example about 5 micrometers.
- These conductive tracks are preferably metallic, for example Al, Mo, Cr, Nb or other.
- a cathode conductor 5 has a width of 400 micrometers, the cathode conductors being separated from each other by a distance equal to approximately 50 micrometers.
- a crossover zone of a cathode conductor 5 with a grid 10 covers several meshes of the lattice. Under these conditions, each area of overlap of a cathode conductor 5 with a grid 10 comprises 48 meshes. The non-operation of a mesh due to short circuits between the grid 10 and microtips only disturbs the assembly in the proportion of 1/48, which has no significant effect.
- the microtips 12 are united in the central areas of the meshes and are connected to the cathode conductor 5 by a resistive layer 7 made of doped silicon for example.
- the distance a separating each microtip 12 can be 5 micrometers for example; the distance r between the microtips 12 of the conductive tracks of the lattice forming a cathode conductor 5 must be sufficient for the voltage drop in the resistive layer 7, nominal, in operation to produce the aforementioned homogenization effect.
- the resistive layer 7 of doped silicon being approximately 0.5 micrometer for example, this distance r is at least 5 micrometers for a voltage drop of between 5 and 10 V in nominal operation. For example, the distance r is chosen equal to 10 micrometers.
- n 36.
- the access resistance of the cathode conductor 5 to all of the microtips 12 is not very dependent on the size of the mesh and the number of microtips it contains. It essentially depends on the resistivity and the thickness of the resistive layer 7.
- the resistivity p is of the order of 3 103 Ohmscm; its thickness e is for example equal to 0.5 micrometer.
- the current of leakage in a mesh is substantially equal to 10 microamps, which is tolerable because it does not alter the functioning of the electron source.
- the microtips are only produced inside the meshes. A positioning of the microtips relative to the meshes of the cathode conductors is therefore necessary with an accuracy of the order of ⁇ 5 micrometers.
- the cathode conductors 5 having a lattice structure rest on a resistive layer 7.
- a resistive layer 7 is therefore interposed between the insulating support (more particularly the layer 4) and each cathode conductor 5.
- a second resistive layer 18 for example made of doped silicon with a resistivity of approximately 104 Ohmscm and a thickness equal to 0.4 micrometer, rests on the insulating layer 8. It is pierced with openings 20 to allow passage of the microtips 12.
- the grids 10a in the form of a square mesh trellis rest on the second resistive layer 18.
- the microtips 12 are placed inside the central zone of the mesh of the trellis.
- the second resistive layer 18 covers the grids 10b which rest on the insulating layer 8.
- the grids can be made of Nb and have a thickness of 0.2 micrometer.
- the width of each grid 10a or 10b can be 5 micrometers for a mesh pitch of 50 micrometers.
- the second resistive layer 18 has a protective role against short circuits, the resistive layer 7 ensuring the function of homogenization of the electronic emission.
- the resistive layers 7 may be doped silicon having for example a resistivity of 105 Ohmscm and a thickness of 0.1 micrometer.
- the cathode conductors 5 can for example be made of ITO (indium oxide doped with tin).
- the grids and the cathode conductors have a lattice structure with square meshes.
- the meshes of the grids and the cathode conductors are then superimposed: the conductive tracks forming the meshes of the grids and the cathode conductors are opposite in the overlap zones.
- a second resistive layer 18 covers each grid 10b or the grids 10a can also cover the second resistive layer 10a.
- cathode conductors these can be covered by the insulating layer 7 (cathode conductor reference 5b) or else cover it (cathode conductor reference 5a).
- a source of electrons having lattice-shaped electrodes makes it possible to reduce the risks of breakdown while ensuring good homogenization of the electronic emission.
- the lattice structure makes it possible to increase the access resistance of the microtips to the cathode conductors without increasing the thickness of the resistive layer.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Claims (13)
- Elektronenquelle, umfassend:- auf einem isolierenden Träger (2, 4) eine erste Reihe paralleler Elektroden, die die Rolle von Kathodenleitern (5) spielen und eine Vielzahl Mikrospitzen (12) aus elektronenemittierendem Material tragen,- eine zweite Reihe paralleler Elektronen (10), die die Rolle von Gates bzw. Steuergittern spielen, elektrisch isoliert von den Kathodenleitern (5) durch eine Isolierschicht (8), und dabei einen Winkel mit diesen bilden, was Kreuzungszonen der Kathodenleiter (5) und der Steuergitter (10) definiert, wobei die Steuergitter (10) und die Isolierschicht (8) jeweils Mikrospitzen (12) gegenüber durchbohrt sind von Öffnungen (14), wobei wenigstens eine resistive Schicht (7, 18) angeordnet ist zwischen einer der Elektrodenreihen und der Isolierschicht (8);dadurch gekennzeichnet,
daß jede der Elektroden (5, 10) von wenigstens einer der Reihen eine Gitterstruktur besitzt, die in Kontakt ist mit einer resistiven Schicht (7, 18). - Elektronenquelle nach Anspruch 1, dadurch gekennzeichnet, daß die Dimension einer Gittermasche kleiner ist als die Dimension einer Kreuzungszone.
- Elektronenquelle nach Anspruch 2, dadurch gekennzeichnet, daß eine Kreuzungszone mehrere Gittermaschen überdeckt.
- Elektronenquelle nach Anspruch 1, dadurch gekennzeichnet, daß die Gittermaschen quadratisch sind.
- Elektronenquelle nach Anspruch 1, dadurch gekennzeichnet, daß die Kathodenleiter (5) eine Gitterstruktur aufweisen.
- Elektronenquelle nach Anspruch 5, dadurch gekennzeichnet, daß die Mikrospitzen (12) die zentralen Bereiche der Gittermaschen einnehmen.
- Elektronenquelle nach Anspruch 5, dadurch gekennzeichnet, daß jeder Kathodenleiter (5) bedeckt ist durch eine resistive Schicht (7).
- Elektronenquelle nach Anspruch 5, dadurch gekennzeichnet, daß eine resistive Schicht (7) eingefügt ist zwischen dem isolierenden Träger (2, 4) und jedem Kathodenleiter (5).
- Elektronenquelle nach einem der Ansprüche 7 oder 8, dadurch gekennzeichnet, daß die resistive Schicht (7) aus dotiertem Silicium ist.
- Elektronenquelle nach Anspruch 1, dadurch gekennzeichnet, daß die Steuergitter (10) eine Gitterstruktur aufweisen.
- Elektronenquelle nach Anspruch 10, dadurch gekennzeichnet, daß jedes Steuergitter (10) bedeckt ist durch eine zweite resitive Schicht (18), den Mikrospitzen (12) gegenüber durchbohrt von Öffnungen (20).
- Elektronenquelle nach Anspruch 10, dadurch gekennzeichnet, daß jedes Steuergitter (10) auf einer zweiten resistiven Schicht (18) ruht, den Mikrospitzen (12) gegenüber durchbohrt von Öffnungen (20).
- Elektronenquelle nach einem der Ansprüche 11 oder 12, dadurch gekennzeichnet, daß die zweite resistive Schicht (18) aus dotiertem Silicium ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9007347A FR2663462B1 (fr) | 1990-06-13 | 1990-06-13 | Source d'electrons a cathodes emissives a micropointes. |
FR9007347 | 1990-06-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0461990A1 EP0461990A1 (de) | 1991-12-18 |
EP0461990B1 true EP0461990B1 (de) | 1994-10-19 |
Family
ID=9397551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91401536A Expired - Lifetime EP0461990B1 (de) | 1990-06-13 | 1991-06-11 | Elektronenquelle mit Mikropunktkathoden |
Country Status (7)
Country | Link |
---|---|
US (1) | US5194780A (de) |
EP (1) | EP0461990B1 (de) |
JP (1) | JP2657984B2 (de) |
KR (1) | KR100204327B1 (de) |
DE (1) | DE69104653T2 (de) |
FI (1) | FI912802A (de) |
FR (1) | FR2663462B1 (de) |
Families Citing this family (163)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2669124B1 (fr) * | 1990-11-08 | 1993-01-22 | Commissariat Energie Atomique | Dispositif electrooptique bistable, ecran comportant un tel dispositif et procede de mise en óoeuvre de cet ecran. |
JP3054205B2 (ja) * | 1991-02-20 | 2000-06-19 | 株式会社リコー | 電子放出素子集積基板 |
US5536193A (en) | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
FR2687839B1 (fr) * | 1992-02-26 | 1994-04-08 | Commissariat A Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source. |
US5675216A (en) | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US5763997A (en) | 1992-03-16 | 1998-06-09 | Si Diamond Technology, Inc. | Field emission display device |
US6127773A (en) | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
US5449970A (en) | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5679043A (en) | 1992-03-16 | 1997-10-21 | Microelectronics And Computer Technology Corporation | Method of making a field emitter |
US5543684A (en) | 1992-03-16 | 1996-08-06 | Microelectronics And Computer Technology Corporation | Flat panel display based on diamond thin films |
US5548185A (en) * | 1992-03-16 | 1996-08-20 | Microelectronics And Computer Technology Corporation | Triode structure flat panel display employing flat field emission cathode |
US5686791A (en) | 1992-03-16 | 1997-11-11 | Microelectronics And Computer Technology Corp. | Amorphic diamond film flat field emission cathode |
US5721472A (en) * | 1992-04-07 | 1998-02-24 | Micron Display Technology, Inc. | Identifying and disabling shorted electrodes in field emission display |
US5459480A (en) * | 1992-04-07 | 1995-10-17 | Micron Display Technology, Inc. | Architecture for isolating display grid sections in a field emission display |
US5424605A (en) * | 1992-04-10 | 1995-06-13 | Silicon Video Corporation | Self supporting flat video display |
US5374868A (en) * | 1992-09-11 | 1994-12-20 | Micron Display Technology, Inc. | Method for formation of a trench accessible cold-cathode field emission device |
FR2702869B1 (fr) * | 1993-03-17 | 1995-04-21 | Commissariat Energie Atomique | Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif. |
US5717285A (en) * | 1993-03-17 | 1998-02-10 | Commissariat A L 'energie Atomique | Microtip display device having a current limiting layer and a charge avoiding layer |
US6034480A (en) * | 1993-07-08 | 2000-03-07 | Micron Technology, Inc. | Identifying and disabling shorted electrodes in field emission display |
US5909203A (en) * | 1993-07-08 | 1999-06-01 | Micron Technology, Inc. | Architecture for isolating display grids in a field emission display |
FR2707795B1 (fr) * | 1993-07-12 | 1995-08-11 | Commissariat Energie Atomique | Perfectionnement à un procédé de fabrication d'une source d'électrons à micropointes. |
US5559389A (en) * | 1993-09-08 | 1996-09-24 | Silicon Video Corporation | Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals |
US7025892B1 (en) | 1993-09-08 | 2006-04-11 | Candescent Technologies Corporation | Method for creating gated filament structures for field emission displays |
US5564959A (en) * | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
JP2699827B2 (ja) * | 1993-09-27 | 1998-01-19 | 双葉電子工業株式会社 | 電界放出カソード素子 |
JP2743794B2 (ja) * | 1993-10-25 | 1998-04-22 | 双葉電子工業株式会社 | 電界放出カソード及び電界放出カソードの製造方法 |
CN1134754A (zh) | 1993-11-04 | 1996-10-30 | 微电子及计算机技术公司 | 制作平板显示系统和元件的方法 |
US5786659A (en) * | 1993-11-29 | 1998-07-28 | Futaba Denshi Kogyo K.K. | Field emission type electron source |
TW253971B (en) * | 1994-02-21 | 1995-08-11 | Futaba Denshi Kogyo Kk | Method for driving electron gun and cathode ray tube |
US5442193A (en) * | 1994-02-22 | 1995-08-15 | Motorola | Microelectronic field emission device with breakdown inhibiting insulated gate electrode |
JP2856672B2 (ja) * | 1994-02-28 | 1999-02-10 | 三星電管株式會社 | 電界電子放出素子及びその製造方法 |
FR2717304B1 (fr) * | 1994-03-09 | 1996-04-05 | Commissariat Energie Atomique | Source d'électrons à cathodes émissives à micropointes. |
US5583393A (en) * | 1994-03-24 | 1996-12-10 | Fed Corporation | Selectively shaped field emission electron beam source, and phosphor array for use therewith |
US5448131A (en) * | 1994-04-13 | 1995-09-05 | Texas Instruments Incorporated | Spacer for flat panel display |
FR2719156B1 (fr) * | 1994-04-25 | 1996-05-24 | Commissariat Energie Atomique | Source d'électrons à micropointes, les micropointes comportant deux parties. |
JPH0845445A (ja) * | 1994-04-29 | 1996-02-16 | Texas Instr Inc <Ti> | フラット・パネル・ディスプレイ装置及びその製造方法 |
US5538450A (en) * | 1994-04-29 | 1996-07-23 | Texas Instruments Incorporated | Method of forming a size-arrayed emitter matrix for use in a flat panel display |
KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
US5491376A (en) * | 1994-06-03 | 1996-02-13 | Texas Instruments Incorporated | Flat panel display anode plate having isolation grooves |
US5453659A (en) | 1994-06-10 | 1995-09-26 | Texas Instruments Incorporated | Anode plate for flat panel display having integrated getter |
US5607335A (en) * | 1994-06-29 | 1997-03-04 | Silicon Video Corporation | Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material |
FR2722913B1 (fr) * | 1994-07-21 | 1996-10-11 | Pixel Int Sa | Cathode a micropointes pour ecran plat |
DE69513581T2 (de) * | 1994-08-01 | 2000-09-07 | Motorola, Inc. | Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung |
FR2723799B1 (fr) * | 1994-08-16 | 1996-09-20 | Commissariat Energie Atomique | Procede de fabrication d'une source d'electrons a micropointes |
US5525857A (en) * | 1994-08-19 | 1996-06-11 | Texas Instruments Inc. | Low density, high porosity material as gate dielectric for field emission device |
EP0707301A1 (de) | 1994-09-14 | 1996-04-17 | Texas Instruments Incorporated | Leistungssteuerung für eine Anzeigeeinrichtung |
US6377002B1 (en) | 1994-09-15 | 2002-04-23 | Pixtech, Inc. | Cold cathode field emitter flat screen display |
JP2907024B2 (ja) * | 1994-09-26 | 1999-06-21 | 関西日本電気株式会社 | 電子放出素子 |
US6252569B1 (en) * | 1994-09-28 | 2001-06-26 | Texas Instruments Incorporated | Large field emission display (FED) made up of independently operated display sections integrated behind one common continuous large anode which displays one large image or multiple independent images |
US5521660A (en) * | 1994-09-29 | 1996-05-28 | Texas Instruments Inc. | Multimedia field emission device portable projector |
EP0706164A1 (de) | 1994-10-03 | 1996-04-10 | Texas Instruments Incorporated | Leistungssteuerung für Anzeigegeräte |
US5528098A (en) * | 1994-10-06 | 1996-06-18 | Motorola | Redundant conductor electron source |
US5502347A (en) | 1994-10-06 | 1996-03-26 | Motorola, Inc. | Electron source |
US5669690A (en) | 1994-10-18 | 1997-09-23 | Texas Instruments Incorporated | Multimedia field emission device projection system |
FR2726122B1 (fr) | 1994-10-19 | 1996-11-22 | Commissariat Energie Atomique | Procede de fabrication d'une source d'electrons a micropointes |
CA2201473A1 (en) * | 1994-10-31 | 1996-05-09 | Honeywell Inc. | Field emitter display |
US5527651A (en) * | 1994-11-02 | 1996-06-18 | Texas Instruments Inc. | Field emission device light source for xerographic printing process |
WO1996014650A1 (en) * | 1994-11-04 | 1996-05-17 | Micron Display Technology, Inc. | Method for sharpening emitter sites using low temperature oxidation processes |
FR2726689B1 (fr) | 1994-11-08 | 1996-11-29 | Commissariat Energie Atomique | Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence |
FR2726688B1 (fr) | 1994-11-08 | 1996-12-06 | Commissariat Energie Atomique | Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence |
US5557159A (en) * | 1994-11-18 | 1996-09-17 | Texas Instruments Incorporated | Field emission microtip clusters adjacent stripe conductors |
US5569975A (en) * | 1994-11-18 | 1996-10-29 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips |
US5541466A (en) * | 1994-11-18 | 1996-07-30 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
US5536993A (en) * | 1994-11-18 | 1996-07-16 | Texas Instruments Incorporated | Clustered field emission microtips adjacent stripe conductors |
EP0713236A1 (de) | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Elektron-emittierenden Vorrichtung |
US5477284A (en) | 1994-12-15 | 1995-12-19 | Texas Instruments Incorporated | Dual mode overhead projection system using field emission device |
US5542866A (en) * | 1994-12-27 | 1996-08-06 | Industrial Technology Research Institute | Field emission display provided with repair capability of defects |
US5554828A (en) * | 1995-01-03 | 1996-09-10 | Texas Instruments Inc. | Integration of pen-based capability into a field emission device system |
US5751262A (en) * | 1995-01-24 | 1998-05-12 | Micron Display Technology, Inc. | Method and apparatus for testing emissive cathodes |
US6559818B1 (en) | 1995-01-24 | 2003-05-06 | Micron Technology, Inc. | Method of testing addressable emissive cathodes |
JP2897671B2 (ja) * | 1995-01-25 | 1999-05-31 | 日本電気株式会社 | 電界放出型冷陰極 |
JP3079352B2 (ja) * | 1995-02-10 | 2000-08-21 | 双葉電子工業株式会社 | NbN電極を用いた真空気密素子 |
US5578902A (en) * | 1995-03-13 | 1996-11-26 | Texas Instruments Inc. | Field emission display having modified anode stripe geometry |
US5598057A (en) | 1995-03-13 | 1997-01-28 | Texas Instruments Incorporated | Reduction of the probability of interlevel oxide failures by minimization of lead overlap area through bus width reduction |
US5578896A (en) * | 1995-04-10 | 1996-11-26 | Industrial Technology Research Institute | Cold cathode field emission display and method for forming it |
US5594297A (en) * | 1995-04-19 | 1997-01-14 | Texas Instruments Incorporated | Field emission device metallization including titanium tungsten and aluminum |
US5601466A (en) * | 1995-04-19 | 1997-02-11 | Texas Instruments Incorporated | Method for fabricating field emission device metallization |
US5760858A (en) * | 1995-04-21 | 1998-06-02 | Texas Instruments Incorporated | Field emission device panel backlight for liquid crystal displays |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
FR2733253B1 (fr) | 1995-04-24 | 1997-06-13 | Commissariat Energie Atomique | Dispositif pour deposer un materiau par evaporation sur des substrats de grande surface |
US6296740B1 (en) | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
US5657054A (en) * | 1995-04-26 | 1997-08-12 | Texas Instruments Incorporated | Determination of pen location on display apparatus using piezoelectric point elements |
US5657053A (en) * | 1995-04-26 | 1997-08-12 | Texas Instruments Incorporated | Method for determining pen location on display apparatus using piezoelectric point elements |
US5591352A (en) * | 1995-04-27 | 1997-01-07 | Industrial Technology Research Institute | High resolution cold cathode field emission display method |
US5631518A (en) * | 1995-05-02 | 1997-05-20 | Motorola | Electron source having short-avoiding extraction electrode and method of making same |
US5543691A (en) * | 1995-05-11 | 1996-08-06 | Raytheon Company | Field emission display with focus grid and method of operating same |
US5633120A (en) * | 1995-05-22 | 1997-05-27 | Texas Instruments Inc. | Method for achieving anode stripe delineation from an interlevel dielectric etch in a field emission device |
US5577943A (en) * | 1995-05-25 | 1996-11-26 | Texas Instruments Inc. | Method for fabricating a field emission device having black matrix SOG as an interlevel dielectric |
US5608285A (en) * | 1995-05-25 | 1997-03-04 | Texas Instruments Incorporated | Black matrix sog as an interlevel dielectric in a field emission device |
US5759078A (en) * | 1995-05-30 | 1998-06-02 | Texas Instruments Incorporated | Field emission device with close-packed microtip array |
US5686782A (en) * | 1995-05-30 | 1997-11-11 | Texas Instruments Incorporated | Field emission device with suspended gate |
US5589728A (en) * | 1995-05-30 | 1996-12-31 | Texas Instruments Incorporated | Field emission device with lattice vacancy post-supported gate |
US5621272A (en) * | 1995-05-30 | 1997-04-15 | Texas Instruments Incorporated | Field emission device with over-etched gate dielectric |
US5558554A (en) * | 1995-05-31 | 1996-09-24 | Texas Instruments Inc. | Method for fabricating a field emission device anode plate having multiple grooves between anode conductors |
US5594305A (en) * | 1995-06-07 | 1997-01-14 | Texas Instruments Incorporated | Power supply for use with switched anode field emission display including energy recovery apparatus |
US5666024A (en) * | 1995-06-23 | 1997-09-09 | Texas Instruments Incorporated | Low capacitance field emission device with circular microtip array |
US5674407A (en) * | 1995-07-03 | 1997-10-07 | Texas Instruments Incorporated | Method for selective etching of flat panel display anode plate conductors |
US5611719A (en) * | 1995-07-06 | 1997-03-18 | Texas Instruments Incorporated | Method for improving flat panel display anode plate phosphor efficiency |
FR2736753B1 (fr) * | 1995-07-10 | 1997-08-22 | Commissariat Energie Atomique | Procede de determination des caracteristiques geometriques optimales des mailles d'une source d'emission a micropointes et structures de sources a micropointes obtenues par ce procede |
DE69530978T2 (de) * | 1995-08-01 | 2004-04-22 | Stmicroelectronics S.R.L., Agrate Brianza | Begrenzung und Selbstvergleichmässigung von durch Mikrospitzen einer flachen Feldemissionsbildwiedergabevorrichtung fliessenden Kathodenströmen |
FR2737928B1 (fr) * | 1995-08-17 | 1997-09-12 | Commissariat Energie Atomique | Dispositif d'insolation de zones micrometriques et/ou submicrometriques dans une couche photosensible et procede de realisation de motifs dans une telle couche |
FR2737927B1 (fr) * | 1995-08-17 | 1997-09-12 | Commissariat Energie Atomique | Procede et dispositif de formation de trous dans une couche de materiau photosensible, en particulier pour la fabrication de sources d'electrons |
US5635791A (en) * | 1995-08-24 | 1997-06-03 | Texas Instruments Incorporated | Field emission device with circular microtip array |
US5628662A (en) * | 1995-08-30 | 1997-05-13 | Texas Instruments Incorporated | Method of fabricating a color field emission flat panel display tetrode |
US5606225A (en) * | 1995-08-30 | 1997-02-25 | Texas Instruments Incorporated | Tetrode arrangement for color field emission flat panel display with barrier electrodes on the anode plate |
US5763998A (en) * | 1995-09-14 | 1998-06-09 | Chorus Corporation | Field emission display arrangement with improved vacuum control |
US5818165A (en) * | 1995-10-27 | 1998-10-06 | Texas Instruments Incorporated | Flexible fed display |
US5672933A (en) * | 1995-10-30 | 1997-09-30 | Texas Instruments Incorporated | Column-to-column isolation in fed display |
US5767619A (en) * | 1995-12-15 | 1998-06-16 | Industrial Technology Research Institute | Cold cathode field emission display and method for forming it |
US6031250A (en) * | 1995-12-20 | 2000-02-29 | Advanced Technology Materials, Inc. | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
US6252347B1 (en) | 1996-01-16 | 2001-06-26 | Raytheon Company | Field emission display with suspended focusing conductive sheet |
US5952987A (en) * | 1996-01-18 | 1999-09-14 | Micron Technology, Inc. | Method and apparatus for improved gray scale control in field emission displays |
JPH09219144A (ja) * | 1996-02-08 | 1997-08-19 | Futaba Corp | 電界放出カソードとその製造方法 |
US5593562A (en) * | 1996-02-20 | 1997-01-14 | Texas Instruments Incorporated | Method for improving flat panel display anode plate phosphor efficiency |
US5733160A (en) * | 1996-03-01 | 1998-03-31 | Texas Instruments Incorporated | Method of forming spacers for a flat display apparatus |
US5944975A (en) * | 1996-03-26 | 1999-08-31 | Texas Instruments Incorporated | Method of forming a lift-off layer having controlled adhesion strength |
US5684356A (en) * | 1996-03-29 | 1997-11-04 | Texas Instruments Incorporated | Hydrogen-rich, low dielectric constant gate insulator for field emission device |
US5830527A (en) * | 1996-05-29 | 1998-11-03 | Texas Instruments Incorporated | Flat panel display anode structure and method of making |
US6187603B1 (en) | 1996-06-07 | 2001-02-13 | Candescent Technologies Corporation | Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material |
US5755944A (en) * | 1996-06-07 | 1998-05-26 | Candescent Technologies Corporation | Formation of layer having openings produced by utilizing particles deposited under influence of electric field |
US5865659A (en) * | 1996-06-07 | 1999-02-02 | Candescent Technologies Corporation | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements |
US5865657A (en) * | 1996-06-07 | 1999-02-02 | Candescent Technologies Corporation | Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material |
US5811926A (en) * | 1996-06-18 | 1998-09-22 | Ppg Industries, Inc. | Spacer units, image display panels and methods for making and using the same |
US5834891A (en) * | 1996-06-18 | 1998-11-10 | Ppg Industries, Inc. | Spacers, spacer units, image display panels and methods for making and using the same |
US5791961A (en) * | 1996-06-21 | 1998-08-11 | Industrial Technology Research Institute | Uniform field emission device |
JP2970539B2 (ja) * | 1996-06-27 | 1999-11-02 | 日本電気株式会社 | 電界放出型陰極およびこれを用いた陰極線管 |
FR2751785A1 (fr) * | 1996-07-29 | 1998-01-30 | Commissariat Energie Atomique | Procede et dispositif de formation de motifs dans une couche de resine photosensible par insolation laser continue, application a la fabrication de sources d'electrons a cathodes emissives a micropointes et d'ecrans plats |
EP0834897B1 (de) | 1996-10-04 | 2002-05-02 | STMicroelectronics S.r.l. | Herstellungsverfahren einer flachen Feldemissionsanzeige und nach diesem Verfahren hergestellte Anzeige |
US5719406A (en) * | 1996-10-08 | 1998-02-17 | Motorola, Inc. | Field emission device having a charge bleed-off barrier |
US5821680A (en) * | 1996-10-17 | 1998-10-13 | Sandia Corporation | Multi-layer carbon-based coatings for field emission |
US5760535A (en) * | 1996-10-31 | 1998-06-02 | Motorola, Inc. | Field emission device |
US6081246A (en) * | 1996-11-12 | 2000-06-27 | Micron Technology, Inc. | Method and apparatus for adjustment of FED image |
US5836799A (en) * | 1996-12-06 | 1998-11-17 | Texas Instruments Incorporated | Self-aligned method of micro-machining field emission display microtips |
JP3156755B2 (ja) * | 1996-12-16 | 2001-04-16 | 日本電気株式会社 | 電界放出型冷陰極装置 |
US5780960A (en) * | 1996-12-18 | 1998-07-14 | Texas Instruments Incorporated | Micro-machined field emission microtips |
US5938493A (en) * | 1996-12-18 | 1999-08-17 | Texas Instruments Incorporated | Method for increasing field emission tip efficiency through micro-milling techniques |
US5828163A (en) * | 1997-01-13 | 1998-10-27 | Fed Corporation | Field emitter device with a current limiter structure |
JP3764906B2 (ja) * | 1997-03-11 | 2006-04-12 | 独立行政法人産業技術総合研究所 | 電界放射型カソード |
JPH10340666A (ja) * | 1997-06-09 | 1998-12-22 | Futaba Corp | 電界電子放出素子 |
US6013986A (en) * | 1997-06-30 | 2000-01-11 | Candescent Technologies Corporation | Electron-emitting device having multi-layer resistor |
US6147664A (en) * | 1997-08-29 | 2000-11-14 | Candescent Technologies Corporation | Controlling the brightness of an FED device using PWM on the row side and AM on the column side |
FR2769114B1 (fr) * | 1997-09-30 | 1999-12-17 | Pixtech Sa | Simplification de l'adressage d'un ecran a micropointes |
US6144144A (en) * | 1997-10-31 | 2000-11-07 | Candescent Technologies Corporation | Patterned resistor suitable for electron-emitting device |
US5910792A (en) * | 1997-11-12 | 1999-06-08 | Candescent Technologies, Corp. | Method and apparatus for brightness control in a field emission display |
JP3353818B2 (ja) * | 1998-03-26 | 2002-12-03 | 日本電気株式会社 | 電界放出型冷陰極装置 |
US6710538B1 (en) * | 1998-08-26 | 2004-03-23 | Micron Technology, Inc. | Field emission display having reduced power requirements and method |
US6417627B1 (en) * | 1999-02-03 | 2002-07-09 | Micron Technology, Inc. | Matrix-addressable display with minimum column-row overlap and maximum metal line-width |
KR100385322B1 (ko) * | 1999-11-27 | 2003-05-23 | 새천년 태양 주식회사 | 천연 한약재를 이용한 약주 제조방법 |
KR20020008727A (ko) * | 2000-07-25 | 2002-01-31 | 유종근 | 호박과 생약재료를 이용한 한방 건강음료 호박대보(大補)탕 및 그의 제조방법 |
KR20020008729A (ko) * | 2000-07-25 | 2002-01-31 | 유종근 | 음양, 기형을 보하는 한방 건강음료 팔보원 및 그의 제조방법 |
JP2002334670A (ja) * | 2001-05-09 | 2002-11-22 | Hitachi Ltd | 表示装置 |
JP2003249182A (ja) * | 2002-02-22 | 2003-09-05 | Hitachi Ltd | 表示装置 |
KR100852690B1 (ko) * | 2002-04-22 | 2008-08-19 | 삼성에스디아이 주식회사 | 전계 방출 표시소자용 탄소 나노 튜브 에미터 페이스트조성물 및 이를 이용한 전계 방출 표시소자용 탄소 나노튜브 에미터의 제조방법 |
US20040245224A1 (en) * | 2003-05-09 | 2004-12-09 | Nano-Proprietary, Inc. | Nanospot welder and method |
KR20050087376A (ko) * | 2004-02-26 | 2005-08-31 | 삼성에스디아이 주식회사 | 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원 |
JP2005340133A (ja) * | 2004-05-31 | 2005-12-08 | Sony Corp | カソードパネル処理方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 |
US20080020499A1 (en) * | 2004-09-10 | 2008-01-24 | Dong-Wook Kim | Nanotube assembly including protective layer and method for making the same |
US7868850B2 (en) * | 2004-10-06 | 2011-01-11 | Samsung Electronics Co., Ltd. | Field emitter array with split gates and method for operating the same |
TWI272870B (en) * | 2005-11-18 | 2007-02-01 | Tatung Co | Field emission display device |
KR20080075360A (ko) * | 2007-02-12 | 2008-08-18 | 삼성에스디아이 주식회사 | 발광 장치 및 이를 이용한 표시장치 |
US8260174B2 (en) | 2008-06-30 | 2012-09-04 | Xerox Corporation | Micro-tip array as a charging device including a system of interconnected air flow channels |
US9053890B2 (en) | 2013-08-02 | 2015-06-09 | University Health Network | Nanostructure field emission cathode structure and method for making |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3735183A (en) * | 1971-05-19 | 1973-05-22 | Ferranti Ltd | Gaseous discharge display device with a layer of electrically resistive material |
JPS5325632B2 (de) * | 1973-03-22 | 1978-07-27 | ||
US4020381A (en) * | 1974-12-09 | 1977-04-26 | Texas Instruments Incorporated | Cathode structure for a multibeam cathode ray tube |
US4098536A (en) * | 1976-11-24 | 1978-07-04 | Mills Marion T | Weathershield for golf carts |
DE3243596C2 (de) * | 1982-11-25 | 1985-09-26 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren und Vorrichtung zur Übertragung von Bildern auf einen Bildschirm |
FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
FR2617534A1 (fr) * | 1987-06-30 | 1989-01-06 | Inst Francais Du Petrole | Dispositif de pompage d'un fluide dans le fond d'un puits |
JP2607251B2 (ja) * | 1987-08-26 | 1997-05-07 | 松下電工株式会社 | 電界放射陰極 |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US5075591A (en) * | 1990-07-13 | 1991-12-24 | Coloray Display Corporation | Matrix addressing arrangement for a flat panel display with field emission cathodes |
-
1990
- 1990-06-13 FR FR9007347A patent/FR2663462B1/fr not_active Expired - Lifetime
-
1991
- 1991-05-31 US US07/703,684 patent/US5194780A/en not_active Expired - Lifetime
- 1991-06-10 KR KR1019910009509A patent/KR100204327B1/ko not_active IP Right Cessation
- 1991-06-11 FI FI912802A patent/FI912802A/fi not_active Application Discontinuation
- 1991-06-11 DE DE69104653T patent/DE69104653T2/de not_active Expired - Lifetime
- 1991-06-11 EP EP91401536A patent/EP0461990B1/de not_active Expired - Lifetime
- 1991-06-11 JP JP13895991A patent/JP2657984B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2657984B2 (ja) | 1997-09-30 |
FR2663462A1 (fr) | 1991-12-20 |
EP0461990A1 (de) | 1991-12-18 |
KR920001744A (ko) | 1992-01-30 |
JPH04229922A (ja) | 1992-08-19 |
FI912802A0 (fi) | 1991-06-11 |
DE69104653T2 (de) | 1995-05-04 |
FR2663462B1 (fr) | 1992-09-11 |
KR100204327B1 (ko) | 1999-07-01 |
US5194780A (en) | 1993-03-16 |
DE69104653D1 (de) | 1994-11-24 |
FI912802A (fi) | 1991-12-14 |
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