EP0708473B1 - Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle - Google Patents

Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle Download PDF

Info

Publication number
EP0708473B1
EP0708473B1 EP95402312A EP95402312A EP0708473B1 EP 0708473 B1 EP0708473 B1 EP 0708473B1 EP 95402312 A EP95402312 A EP 95402312A EP 95402312 A EP95402312 A EP 95402312A EP 0708473 B1 EP0708473 B1 EP 0708473B1
Authority
EP
European Patent Office
Prior art keywords
layer
lift
electrically insulating
deposition
une
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95402312A
Other languages
English (en)
French (fr)
Other versions
EP0708473A1 (de
Inventor
Robert Meyer
Michel Borel
Marie-Dominique Bruni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0708473A1 publication Critical patent/EP0708473A1/de
Application granted granted Critical
Publication of EP0708473B1 publication Critical patent/EP0708473B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Definitions

  • the present invention relates to a method of fabrication of a microtip electron source ("microtips").
  • the invention applies to any field where is likely to use such an electron source to microtips, in particular the field of flat display also called "flat screens”.
  • the invention makes it possible for example to manufacture large micropoint flat screens, the surface area of which can be of the order of 1000 cm 2 and can even go up to around 1 m 2 .
  • document (1) describes a matrix point electron source with microtips and a method of manufacturing this source.
  • Documents (2) to (4) relate to source improvements described in document (1).
  • microtips are produced by a method vacuum evaporation.
  • This method involves two steps.
  • a first step is to evaporate, under grazing incidence, a sacrificial layer ("lift off layer "in articles in the English language), for example nickel.
  • this layer 12 under incidence grazing allows to selectively deposit nickel on the grid layer 8 without putting holes at the bottom.
  • a second step is to deposit on the entire structure thus obtained a layer 14 of an electron emitting material like for example the molybdenum.
  • This deposit is made by evaporation of molybdenum under almost normal incidence.
  • the major drawback of the technique just remembered basically lies in evaporation of the sacrificial layer under incidence grazing.
  • the grazing incidence means that place on a crown, in the evaporation device, the structures on which we want to form the layer of nickel.
  • the processing time is long, in particular due to the evaporation of nickel which must be made at low speed to avoid projections.
  • Evaporation of the material leading to microtips is done at an angle of incidence less than 10 ° (almost normal incidence).
  • the object of the present invention is to remedy to the previous drawbacks, replacing evaporation under grazing incidence by a wet chemical deposit.
  • the invention makes it possible in particular to simplify the evaporation device it was question above and increase the ability to production of it, as will be seen better by the after.
  • the present invention allows deposit microtips on large areas.
  • the wet chemical deposition is an electrolytic deposition.
  • the grid layer as a cathode for this electrolytic deposition.
  • the sacrificial layer is eliminated by electrolysis.
  • This sacrificial layer can be made of a material chosen from the group comprising the metals Cr, Fe, Ni, Co, Cd, Cu, Au, Ag and alloys of these metals.
  • this sacrificial layer is made of an alloy of iron and nickel.
  • Figure 2 illustrates schematically a structure that was discussed in the description of FIG. 1 and which comprises, on the surface, the grid layer 8, this structure not comprising not layers 12 and 14.
  • FIG. 2 The structure of Figure 2 has been coated a sacrificial layer 18 in accordance with the invention, by electrolytic deposition.
  • the technique used in the present invention leads to a selective deposition on the grid layer 8, like the allowed evaporation under grazing incidence.
  • This electrolysis deposition technique which can be used in the present invention, has the advantage of being fast and inexpensive since it does not requires only electrolysis equipment.
  • Figure 3 shows a device evaporation under vacuum allowing, in accordance with prior art, the deposition of a layer sacrificial under grazing incidence and the deposit of a layer of electron-emitting material under incidence almost normal.
  • FIG. 3 We have represented very schematically on the FIG. 3 a vacuum enclosure 20 and, therein, substrates 22 on which we want to do first evaporation of the sacrificial layer under incidence grazing then depositing the layer of emitting material of electrons under almost normal incidence.
  • Tilting means 26, which are shown schematically by arrows in Figure 3, are planned to go from grazing incidence deposit to almost normal incidence deposition from a source 28 of electron emitting material.
  • Figure 4 shows a device of evaporation usable in the present invention.
  • This device is much simpler than that of FIG. 3 since, in a conforming process to the invention, only the evaporation of a electron-emitting material, under an incidence almost normal, to form microtips.
  • the deposition of the sacrificial layer can be easily performed on malls.
  • a structure 29 comprising a glass substrate 30 on which is formed a layer of silica 32.
  • Cathodic conductors made of niobium 34 are formed on the silica layer 32.
  • cathode conductors 34 have a 0.2 ⁇ m thick and have a lattice structure with for example square meshes whose pitch is worth 25 ⁇ m.
  • cathode conductors 34 made of niobium constitute the columns of the electron source to form.
  • a resistive layer 36 of amorphous silicon doped with phosphorus is deposited on the conductors cathodic.
  • This layer 36 is around 1 ⁇ m.
  • An insulating layer 38 of silica is deposited on this resistive layer 36.
  • the thickness of the silica layer 38 is also of the order of 1 ⁇ m.
  • a metallic layer 40 of niobium is deposited on the silica layer 38.
  • This layer 40 constitutes a layer of wire rack.
  • This grid layer 40 is around 0.4 ⁇ m.
  • Holes 42 of 1.4 ⁇ m in diameter are etched in the grid layer 40 and in the layer insulating 38.
  • These holes 42 are placed in the area central mesh of the trellis and lead to the resistive layer 36.
  • sacrificial layer 44 of iron alloy and of nickel on the gate layer 40 by electrolysis.
  • the layer of grid 40 serves as a cathode.
  • This deposition is carried out by evaporation under almost normal incidence.
  • Microdots 54 are thus formed in the holes 42.
  • microtips 42 rest on the layer resistive 36.
  • the sacrificial layer 44 is dissolved by electrolysis.
  • an electric voltage source appropriate 58 By means of an electric voltage source appropriate 58, an electrical voltage is established between the sacrificial layer 44 and an appropriate electrode 60 placed in the electrolytic bath 52.
  • the sacrificial layer 44 serves as an anode and electrode 60 acts as a cathode during electrolysis.
  • the voltage applied by the source 58 enters the layer 44 and the electrode 60 is approximately 2V.
  • the time required for the dissolution of the sacrificial layer 44 generally varies between 30 min and 60 mins.

Claims (5)

  1. Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle, das die folgenden Schritte umfaßt:
    Herstellung einer Struktur mit einem elektrisch isolierenden Substrat (2, 32), wenigstens einem Kathodenleiter (4, 34) auf diesem Substrat, einer jeden Kathodenleiter bedeckenden elektrisch isolierenden Schicht (6, 38), einer diese elektrisch isolierenden Schicht bedeckenden elektrisch leitende Gitterschicht (8, 40),
    Bildung von Löchern (10, 42) durch die Gitterschicht und die elektrisch isolierende Schicht hindurch, in Höhe jedes Kathodenleiters,
    Bildung einer Opferschicht (18, 44) auf der Gitterschicht,
    Abscheidung einer Schicht (52) aus einem elektronenemittierenden Material auf der gesamten erhaltenen Struktur, daher Bildung einer Mikrospitze (54) in jedem Loch, und
    Eliminierung der Opferschicht, was die Eliminierung des auf dieser Opferschicht befindlichen elektronenemittierenden Materials mit sich bringt bzw. zur Folge hat,
    wobei dieses Verfahren dadurch gekennzeichnet ist, daß die Opferschicht (18, 44) durch ein naßchemisches Abscheidungs- bzw. Niederschlagsverfahren gebildet wird.
  2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die naßchemische Abscheidung eine elektrolytische Abscheidung ist.
  3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß die Opferschicht (18, 44) durch Elektrolyse eliminiert wird.
  4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Opferschicht (18, 44) durch ein Material aus der Gruppe gebildet wird, die die Metalle Cr, Fe, Ni, co, Cd, Cu, Au, Ag und die Legierungen dieser Metalle umfaßt.
  5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß die Opferschicht (18, 44) durch eine Legierung aus Eisen und Nickel gebildet wird.
EP95402312A 1994-10-19 1995-10-17 Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle Expired - Lifetime EP0708473B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9412467A FR2726122B1 (fr) 1994-10-19 1994-10-19 Procede de fabrication d'une source d'electrons a micropointes
FR9412467 1994-10-19

Publications (2)

Publication Number Publication Date
EP0708473A1 EP0708473A1 (de) 1996-04-24
EP0708473B1 true EP0708473B1 (de) 1999-01-20

Family

ID=9467993

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95402312A Expired - Lifetime EP0708473B1 (de) 1994-10-19 1995-10-17 Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle

Country Status (5)

Country Link
US (1) US5679044A (de)
EP (1) EP0708473B1 (de)
JP (1) JPH08227653A (de)
DE (1) DE69507418T2 (de)
FR (1) FR2726122B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893967A (en) * 1996-03-05 1999-04-13 Candescent Technologies Corporation Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device
US6027632A (en) * 1996-03-05 2000-02-22 Candescent Technologies Corporation Multi-step removal of excess emitter material in fabricating electron-emitting device
US5944975A (en) * 1996-03-26 1999-08-31 Texas Instruments Incorporated Method of forming a lift-off layer having controlled adhesion strength
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US6007695A (en) * 1997-09-30 1999-12-28 Candescent Technologies Corporation Selective removal of material using self-initiated galvanic activity in electrolytic bath
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
JP4803998B2 (ja) * 2004-12-08 2011-10-26 ソニー株式会社 電界放出型電子放出素子の製造方法
TWI437615B (zh) * 2011-06-07 2014-05-11 Au Optronics Corp 場發射顯示元件之製作方法及應用於製作場發射顯示元件之電化學系統

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3340777A1 (de) * 1983-11-11 1985-05-23 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung von duennfilm-feldeffekt-kathoden
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
FR2623013A1 (fr) 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5053673A (en) * 1988-10-17 1991-10-01 Matsushita Electric Industrial Co., Ltd. Field emission cathodes and method of manufacture thereof
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays
FR2663462B1 (fr) 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
FR2687839B1 (fr) 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure

Also Published As

Publication number Publication date
DE69507418T2 (de) 1999-07-15
FR2726122A1 (fr) 1996-04-26
FR2726122B1 (fr) 1996-11-22
US5679044A (en) 1997-10-21
JPH08227653A (ja) 1996-09-03
DE69507418D1 (de) 1999-03-04
EP0708473A1 (de) 1996-04-24

Similar Documents

Publication Publication Date Title
EP0461990B1 (de) Elektronenquelle mit Mikropunktkathoden
EP0234989B1 (de) Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
WO2007026086A2 (fr) Procede de fabrication d'une cathode emissive
EP0712147B1 (de) Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz
EP0712146B1 (de) Feldeffekt-Elektronenquelle und Herstellungsverfahren dazu, Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz
EP0708473B1 (de) Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle
FR2895531A1 (fr) Procede ameliore de realisation de cellules memoires de type pmc
EP0634769B1 (de) Herstellungsverfahren für Mikrospitzenkaltkathoden
EP0707237B1 (de) Verfahren zur Herstellung von Löchern in Photoresistschichten, Anwendung für die Herstellung von Elektronenquelle mit Mikrospitzenemissionskathoden und flachen Bildschirmen
FR2742578A1 (fr) Cathode a emission de champ et son procede de fabrication
FR2705830A1 (fr) Procédé de fabrication de dispositifs d'affichage à micropointes, utilisant la lithographie par ions lourds.
EP0616356B1 (de) Mikrospitzebildwiedergabeanordnung und Herstellungsverfahren
EP0697710A1 (de) Herstellungsverfahren einer Mikrospitzen-Elektronenquelle
EP0856868B1 (de) Feldemissionselektronenquelle und Bildschirm mit solcher Feldemissionselektronenquelle
FR2736203A1 (fr) Dispositif d'affichage a emission de champ lateral et procede de fabrication de ce dernier
EP0943153A1 (de) Ein durch einen mikrospitzen-träger beobachtbares, mit einer mikrospitzen-elektronenquelle versehenes bildschirm und verfahren zur herstellung dieser quelle
EP0671755A1 (de) Elektronen Quelle mit Mikrospitzenemissionskathoden
FR2700217A1 (fr) Procédé de réalisation sur silicium, de cathodes émissives à micropointes pour écran plat de petites dimensions, et produits obtenus.
EP1029338A1 (de) Vefahren zur herstellung einer mikrospitzen-elektronenquelle
FR2719155A1 (fr) Procédé de réalisation de sources d'électrons à micropointes et source d'électrons à micropointes obtenue par ce procédé.
FR2757999A1 (fr) Procede d'auto-alignement utilisable en micro-electronique et application a la realisation d'une grille de focalisation pour ecran plat a micropointes
FR2779243A1 (fr) Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes
FR2786026A1 (fr) Procede de formation de reliefs sur un substrat au moyen d'un masque de gravure ou de depot

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB IT

17P Request for examination filed

Effective date: 19960927

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

17Q First examination report despatched

Effective date: 19980122

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT

REF Corresponds to:

Ref document number: 69507418

Country of ref document: DE

Date of ref document: 19990304

ITF It: translation for a ep patent filed

Owner name: JACOBACCI & PERANI S.P.A.

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 19990323

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20031016

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20031024

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20041017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050503

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20041017

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20051017